硅晶闸管烧结应力的红外光弹性研究

参考热弹性理论和复合材料层间应力理论，研究了Ｓｉ片Ａｌ箔／Ｍｏ片烧结后的层间应力及硅片中的应力，热膨性能不同引起的热应力成硅片中的中间和边缘区域分布情况不一样，推导出适用于边级区域的应力计算表达式，用红外光弹测量获得晶闸管烧结工艺制备样品的应力分布光弹图，理论能较好地解释实验结果。     

用红外光弹测量功率整流管工艺中的残余应力

利用红外光弹系统，采用森纳蒙特（Ｓｅｎａｒｍｏｎｔ）补偿法，对功率整流管制备过程中扩散和镀镍工艺所引入的残余应力进行了测量和讨论．获得扩硼铝、扩磷和镀镍硅片中的应力值，并给出了残余应力在硅衬底片中的分布图．     

硅晶片应力的红外光弹测量

本文介绍测量硅晶片应力的红外光弹系统及方法。对硅晶片进行了四点简支梁模型的加压实验,其应力测量的结果与理论计算的结果基本符合;并测量了某些半导体器件模拟工艺在硅片内引入的应力。     

3D堆叠芯片硅通孔的电-热-力耦合构形设计

建立了3D堆叠芯片硅通孔(TSV)单元体模型,在单元体总体积和TSV体积占比给定时,考虑电-热-力耦合效应,以最高温度、(火积)耗散率、最大应力和最大形变为性能指标,对TSV横截面长宽比和单元体横截面长宽比进行双自由度构形设计优化.结果表明,存在最佳的TSV横截面长宽比使得单元体的最高温度、(火积)耗散率和最大应力取得极小值,但对应不同优化目标的最优构形各有不同,且TSV两端电压和芯片发热功率越大,其横截面长宽比对各性能指标的影响越大.铜、铝、钨3种材料中,钨填充TSV的热学和力学性能最优,但其电阻率较大.铜填充时,4个指标中最大应力最敏感,优先考虑最大应力最小化设计需求以确定TSV几何参数,可以较好兼顾其他性能指标.     

基于环形振荡器的TSV故障非接触测试方法

为避免传统的探针检测对硅通孔(TSV)造成损伤的风险,提出了一种非损伤的TSV测试方法.用TSV作为负载,通过环形振荡器测量振荡周期.TSV缺陷造成电阻电容参数的变化,导致振荡周期的变化.通过测量这些变化可以检测TSV故障,同时对TSV故障的不同位置引起的周期变化进行了研究与分析,利用最小二乘法拟合出通过周期来判断故障位置的曲线,同时提出预测模型推断故障电阻范围.测试结构是基于45 nm PTM COMS工艺的HSPICE进行设计与模拟,模拟结果表明,与同类方法相比,此方法在测试分辨故障的基础上对TSV不同位置的故障进行分析和判断,并能推断故障电阻范围.     

结构化晶圆表面厚胶喷涂工艺

采用超声雾化喷涂技术,以AZ4620光刻胶为研究对象,以硅通孔(TSV)刻蚀后的硅片为基材,在12英寸(1英寸=2.54 cm)结构化晶圆表面喷涂光刻胶形成薄膜。分别研究了稀释质量比、超声功率、氮气体积流量、喷嘴与晶圆表面的间距、载台温度等工艺参数对TSV硅片表面喷涂质量的影响,最终通过优化过程工艺参数,得到表面胶颗粒细小、膜厚均匀性好、台阶覆盖率高的涂覆刻蚀片。实验结果表明,超声雾化喷涂法可以很好地应用于三维结构表面涂覆,克服了旋涂方法在三维结构应用中带来的缺陷,同时有效地提高了光刻胶的利用率,在集成电路(IC)制造和微电子机械系统(MEMS)工艺中有着广阔的应用前景。     

驱动应变桥传感器的信号调理IC

应变片传感器具有可靠、可重复和精确的特点,广一个保护绝缘层来保护传感器和互连线。泛用于制造、过程控制和科研领域。应变片传感器把应传感器材料通常包括一种专用合金,所选的合金能变转换为压力传感器、重量测量、力和转矩测量及材料产生所希望的传感器阻抗、阻抗随应力的变化关系以及分析所用的电信号。应变片只不过是一个电阻器,其值传感器和基层金属间最好的温度系数匹配。已开发出随粘贴材料的应变而变化。3K?￣30K?标定传感器和桥阻抗,已用于制造压力和通用的应变片具有宽范围零应变电阻。传感器材料和力传感器。工艺是造成其宽范…     

抛光工艺对硅片表面Haze值的影响

随着超大规模集成电路的快速发展,硅片表面的Haze值对于现代半导体器件工艺的影响也越来越受到人们的重视.通过实验研究了精抛光工艺参数对硅片表面Haze值的影响规律.结果表明,随着抛光时间的延长,硅的去除量逐渐增大,硅片表面Haze值逐渐降低;同时抛光过程中机械作用与化学作用的协同作用对Haze值也有较大影响.随着抛光液温度的降低与抛光液体积流量的减小,化学作用减弱,硅片表面Haze值逐渐减小.而随着抛光压力的增大,机械作用逐渐起主导作用,硅片表面Haze值逐渐降低.但当Haze值降低到某一数值后,随着硅去除量的增大、抛光液温度的下降、抛光液体积流量的降低、抛光压力的增大,硅片表面的Haze值基本保持不变.     

高深宽比硅通孔的SAPS兆声波清洗技术

硅通孔(TSV)是三维系统集成的关键技术和发展趋势,目前已经可以实现深宽比为10∶1的TSV结构,且向着更高深宽比方向发展。在TSV制造工艺中,硅通孔刻蚀后的清洗是目前的关键技术难点之一。针对TSV刻蚀的工艺特点和TSV结构的特点,基于气体交替技术的硅刻蚀反应副产物种类以及清洗过程清洗液在TSV孔内的流体特性进行分析,探讨了一种基于现有清洗液,利用空间交变相位移(SAPS)兆声波技术进行TSV刻蚀后的清洗方法,并阐述了该清洗工艺的特点及前后工艺间的相互影响。研究结果表明,SAPS兆声波清洗能高效去除深孔内刻蚀残余产物,在TSV工艺集成中有较好的应用前景。     

硅片调焦调平测量系统测试平台

硅片调焦调平测量系统测试平台用于对光刻机硅片调焦调平测量系统的性能进行检测。该平台模拟硅片调焦调平测量系统在光刻机中的测量对象的运动和工作环境,由三自由度运动台吸附硅片模拟光刻机工件台的垂向运动,采用比较激光干涉仪和硅片调焦调平测量系统同时对硅片测量的结果作为其性能的评估依据。该平台测量精确可靠,可以用于精度、分辨率和重复性等性能指标的检测。     

Interfacial reaction and shear strength of SnAgCu-xNi/Ni solder joints during aging at 150 °C

The interfacial microstructure and shear strength of Sn3.8Ag0.7Cu-xNi (SAC-xNi, x = 0.5, 1, and 2) composite solders on Ni/Au finished Cu pads were investigated in detail after aging at 150 °C for up to 1000 h. The interfacial characteristics of composite solder joints were affected significantly by the weight percentages of added Ni micro-particles and aging time. After aging for 200 h, the solder joints of SAC, SAC-0.5Ni and -1Ni presented duplex intermetallic compound (IMC) layers regardless of the initial interfacial structure on as-reflowed joints, whose upper and lower IMC layers were comprised of (CuNi)₆Sn₅ and (NiCu)₃Sn₄, respectively. Only a single (NiCu)₃Sn₄ IMC layer was ever observed at the SAC-2Ni/Ni interface on whole aging process. Based on the compositional analysis, the amount of Ni within the IMC regions increased as the proportion of Ni addition increased. The IMC (NiCu)₃Sn₄ layer thickness on the interface of SAC and SAC-0.5Ni grew more slowly when compared to that of SAC-1Ni and -2Ni, while for the (CuNi)₆Sn₅ layer the reverse is true. Except the IMCs sizes are increased with increased aging time, the interfacial IMCs tended to transfer their morphologies to polyhedra. In all composite joints testing, the shear strengths were approximately equal to non-composite joints. The fracturing observed during shear testing of composite joints occurred in the bulk solder, indicating that the SAC-xNi/Ni solder joints had a desirable joint reliability.     

有机发光二极管中ADN掺杂ErQ的1.54μm电致发光

自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ:ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN:ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移.     

BNBST无铅压电陶瓷的制备工艺研究

设计了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3（BNBST[100x-100a／100b]）无铅压电陶瓷新体系。该体系压电陶瓷具有工艺特性及压电响应好，压电常数高的特点，且有实际应用前景的新型压电陶瓷材料体系。采用传统的陶瓷工艺制备了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3无铅压电陶瓷，研究了制备工艺参数对其物化结构性能的影响。生料的热重-差热（TGA-DTA）分析表明，粉料合成过程中，先是SrTiO3、BaTiO3的形成，然后是（Bi0．5Na0．5）Tio，的形成，同时三者形成固溶体；密度测试表明，陶瓷的体积密度随烧结温度的升高而增大，可较易获得理论密度94％的陶瓷；X-射线能谱分析（EDAX）研究表明，陶瓷的Bi、Na的挥发随着烧结温度的升高而加剧。研究结果表明，要制备性能优良的无铅压电陶瓷，需要精确控制制备工艺。     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

钠离子对poly(dT).poly(dA).poly(dT)三螺旋DNA分子呼吸模式的影响

利用分子结构的螺旋对称性,建立了一个包括钠离子的三链DNA分子poly(dT)*poly(dA)*poly(dT)的晶格动力学模型,计算了poly(dT)*poly(dA)*poly(dT)的氢键呼吸模式.结果发现钠离子的加入明显地淬灭了位于较低频率的几个最为强烈的Hoogensteen氢键呼吸模式,而对Watson-Crick氢键呼吸模式影响不明显,这说明钠离子能提高poly(dT)*poly(dA)*poly(dT)三螺旋结构的稳定性.该计算结果很好地解释了poly(dT)*poly(dA)*poly(dT)的热融化实验.     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

人小肠粘膜免疫酶的定位研究—光镜和电镜免疫组织化学染色法

本文对免疫酶组织化学的样品制备程序和染色方法做了详细的阐述。用直接法、间接法和ABC法,对人小肠免疫酶的定位,进行了光镜和电镜的观察,染色阳性反应显著,获得了满意的效果。并对染色技巧做了分析和探讨。     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.     

盲多用户检测技术中的恒模算法分析

恒模算法（CMA）是一种广泛应用于阵列处理、均衡和多用户检测中的盲算法。现对恒模算法及其在盲多用户检测技术中的应用进行了分析,并指出其研究方向。