波导层介质对二维光子晶体反射光谱的影响

构建了基底介质为SiO2、表面覆层介质为TiO2 的二维光子晶体,采用严格耦合波法分析了二维光子晶体的窄带光学传输特性。分析了二维光子晶体的晶格周期、波导层的折射率及厚度对其反射光谱的影响。分析结果表明:当光子晶体的晶格周期和波导层介质厚度为常数时,随着波导层介质折射率的增大,光子晶体的反射峰值波长红移,且波导层折射率与反射峰值波长呈线性关系。当光子晶体波导层介质折射率为常数时,波导层厚度增大或光子晶体晶格周期的增大都会引起光子晶体反射峰值波长增大,但这两个参数与反射峰值波长只是在一定的变化范围内为线性关系。此种结构的二维光子晶体覆层表面吸附分布不均匀的介质时,通过分析光子晶体的呈现光谱可获得其表面吸附介质的不均匀特性。     

二维光子晶体波导和微腔缺陷态研究

利用二维三角晶格及正方晶格介质柱光子晶体TE偏振的禁带与介质柱半径的变化关系,分析了二维光子晶体缺陷态的分布.根据光子晶体波导间的耦合作用,计算其耦合长度设计合理的定向耦合器.通过分析波导与微腔的耦合特性,选取不同的传输方向,可以设计多种基于光子晶体波导与微腔耦合的波分复用系统.     

空气孔型光子晶体带隙及波导耦合特性研究

为了研究2维三角晶格空气孔型光子晶体TE模和TM模偏振的禁带宽度与介质柱半径的变化关系,采用平面波展开法数值计算和分析了空气孔型光子晶体的带隙分布及波导耦合特性。结果表明,光子禁带的宽度会随着介质柱半径的大小而变化,束缚在光子晶体中的光波可以在波导和谐振腔中高效率地传输,达到选择输出光波的目的。这种特性在光学集成电路中具有重要而潜在的应用价值。     

GeSbSe光子晶体波导结构设计及传输特性研究

利用平面波展开法计算Ge Sb Se基质光子晶体带隙,研究光子晶体波导中带隙与空气孔(或介质柱)半径的变化关系,并结合光子晶体波导的工作波长,设计出周期为500 nm,半径为150 nm的三角晶格空气孔型Ge Sb Se光子晶体波导。采用时域有限差分法模拟所设计的直线型光子晶体波导和60°弯曲光子晶体波导的传输特性,模拟结果显示在传统结构光子晶体波导中,直线型光子晶体波导具有很高的光学传输效率,但在60°弯曲型波导中的传输效率较低,分析原因为光子晶体波导直线区域与弯曲区域光的传播模式不同。因此对60°弯曲型Ge Sb Se光子晶体波导进行了结构优化,优化后的光子晶体波导可以在较宽的波长范围内具有很高的传输效率。     

太赫兹波在二维正方晶格光子晶体中的传播特性

本文用平面波展开法研究了太赫兹波(THz)在二维正方晶格光子晶体中的传播特性。分析了晶格常数为a=0.1mm的正方晶格介质柱二维光子晶体,在0~1.8THz频段范围内,通过数值计算,发现当介质圆柱半径r=0.2a时,E偏振出现最大绝对光子带隙,带隙位于0.283-0.400THz,带隙宽度为0.117THz,相应的带隙波长范围为84.9μm至120μm,处于THz波段,并分析了随着相对介电常数差值的增大出现的TM带隙宽度增大。研究结果为THz器件的开发提供了理论依据。     

太赫兹波在二维三角晶格光子晶体中的传播特性

用平面波展开法研究了太赫兹波在二维三角晶格光子晶体中的传播特性。数值计算了以硅为背景的空气圆柱构成的二维三角晶格光子晶体的能带结构和态密度,计算表明r=0.50a和r=0.46a时,E偏振和H偏振分别出现最大光子带隙,带隙宽度分别0.1097THz和0.1935THz,在r=0.48a出现最大完全光子带隙,带隙宽度为0.0759THz,光子晶体态密度的分布也表明了存在光子带隙的范围,研究结果为太赫兹器件的开发提供了理论依据。     

SiO2/Si光子晶体透射特性的数值研究

为了了解电磁波在2维三角晶格SiO2/Si光子晶体的传输特性,利用时域有限差分方法进行了数值模拟和计算,并研究了SiO2介质柱的形状和入射波模式的变化对晶体透射特性的影响.计算后得到多种情况下该光子晶体的透射率与入射光频率的关系曲线.结果表明,禁带的宽度和位置与构成光子晶体中SiO2的形状有关,SiO2柱半径变大则禁带变宽且禁带中心频率变大,半径为0.4a时,禁带宽度达到最大值.与TM模相比,TE模入射时,光子晶体更易形成禁带.这为光子晶体的实验制作和应用提供了理论依据.     

基于内全反射微环空气孔型光子晶体光分插滤波器

提出一种基于内全反射微环和光子晶体带隙相结合的混合结构空气孔型二维三角晶格光子晶体光分插滤波器,通过压缩及移位围绕线缺陷波导的上下两排光子晶体阵列,实现空气孔型线缺陷波导单模的有效调控,进而影响信道的下路效率,并且利用二维时域有限差分法系统分析不同波导宽度以及不同移位量δ时滤波器的下路效率。模拟计算表明,当波导宽度为0.8槡3晶格常数,耦合强度为0个晶格常数,移位量为0.5个晶格常数,信道波长为1464nm时,下路效率为-0.11dB,品质因子Q为1100;当波导宽度为0.8槡3晶格常数,耦合强度为1个晶格常数,移位量为0个晶格常数时,下路效率为-0.89dB,品质因子Q为2100。     

二维光子晶体窄带滤波器研究

由于光子晶体存在带隙,只要在完整的二维光子晶体中引入线缺陷,那么原来处于禁带处特定波长的光也能沿着形成的波导传播,从而该光子晶体就具备了滤波的功能,再在线型波导的一侧设计个点缺陷,利用时域有限差分法分析发现,在缺陷处耦合出来的光不仅仅光强增大了,而且半高宽也变小了,这就与窄带滤波器的功能十分吻合。此外,只要根据光子晶体的晶格常数和椭圆介质柱的半径与窄带滤波器的中心波长关系,通过调整光子晶体的晶格常数和介质柱的半径,就可以改变窄带滤波器的中心波长。     

基于光子晶体慢光效应的三端口波分复用器的研究

基于光子晶体设计了一种并联的三端口解复用器,其中不同端口的波导宽度不同。这种解复用的机制是基于在不同的波导宽度下对波导频带中导模的调制作用。这种调制作用利用了光子晶体本身的频率敏感性和波导的慢光区域将需要解复用的波长从主波导中导出,也就是说,利用波导在慢光区域沿纵向较宽的电场空间分布将待解复用的波长从主波长中分离出。计算分析了该解复用器的光谱特性。可以看出利用这个机制并联更多不同宽度的波导还可以设计出多于三端口的解复用器。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.