Orientation dependence of optical properties in long wavelengthstrained quantum-well lasers

The dependence of optical properties on crystal orientation is analyzed for long wavelength strained quantum-well (QW) GaAsP-InGaAsP lasers. The calculation is based on the multiband effective mass theory which enables us to consider the anisotropy and the nonparabolicity of the valence-band dispersions. It is found that the optical gain increases as the crystal orientation is inclined from (001) toward (110). This is due to the reduced valence-band density of states. The differential gain is about 1.6 times larger for the (110)-oriented 1.55-μm strained QW's than for equivalent (001)-oriented QW's. It is also shown that the threshold current density in 1.3-μm strained QW lasers decreases to two-thirds of that in the (001)-oriented laser as the orientation is inclined away from (001) by 40°-90     

Theoretical analysis of high-temperature characteristics of1.3-μm InP-based quantum-well lasers

By taking into account the electrostatic deformation in the band profiles and the temperature dependence of the optical dephasing time, we study the temperature sensitivity of the differential gain, threshold carrier density, and radiative current density in 1.3-μm InP-based strained-layer quantum-well (QW) lasers. Electrostatic deformation is analyzed by the self-consistent numerical calculation of Poisson's equation, the scalar effective-mass equation for the conduction band, and the multiband effective-mass equation for the valence band. The optical dephasing time is then obtained from the intrasubband scattering rates for electrons and holes within the fully dynamic random phase approximation including carrier-carrier and carrier-phonon interactions on an equal basis. It is clarified that the electrostatic band-profile deformation is one of the dominant mechanisms For determining the temperature sensitivity Of the differential gain, while the optical dephasing time has a pronounced influence on the transparent condition at elevated temperatures. We demonstrate that the electrostatic band-profile deformation and the temperature-dependent optical dephasing play essential roles in determining the high-temperature characteristics of InP-based QW lasers     

Comprehensive modeling of diffused quantum-well vertical-cavitysurface-emitting lasers

A numerical model for investigating the thermal, electrical, and optical characteristics of vertical-cavity surface-emitting: lasers (VCSELs) with a diffused quantum-well (QW) structure is presented. In the model, the quasi-three-dimensional (quasi-3-D) distribution of temperature, voltage and optical fields as well as the quasi-two-dimensional (quasi-2-D) diffusion and recombination of carrier concentration inside the QW active layer are calculated in a self-consistent manner. In addition, the quasi-3-D distribution of implanted ions before and after thermal annealing are computed. The variation of electrical conductivity and absorption loss as well as the influence of impurity induced compositional disordering on the optical gain and refractive index of the QW active layer are also taken into consideration. Using this model, the steady-state characteristics of diffused QW VCSELs are studied theoretically. It is shown that significant improvement of stable single-mode operation can be obtained using diffused QW structure     

Manipulation of structural and optical behaviors in zincblende and wurtzite mercuric sulfide (HgS) nanocrystals: atomistic tight-binding theory

To obtain comprehensive information regarding the effect of size and geometric structure on the associated atomistic properties of mercuric sulfide (HgS) nanocrystals, the structural and optical properties of HgS semiconductor nanocrystals were explored numerically using atomistic tight-binding theory. The optical bandgap, charge density, density of states, electron–hole Coulomb energy, and optical spectrum were evaluated for different sizes and geometric structures. Size-dependent computations were realized by changing the diameter of the HgS nanocrystals. In addition, HgS nanocrystals with wurtzite and zincblende geometric structures were compared numerically. The theoretical results highlight that control of the electronic structure and optical properties of HgS nanocrystals can be achieved by changing their size and geometric structure. The dependence of the optical bandgap on the dimension of the HgS nanocrystals is mainly determined by quantum confinement. Finally, the optical properties of zincblende HgS nanocrystals are more promising than those of wurtzite HgS nanocrystals.     

The theory of non-Markovian gain in semiconductor lasers

In this paper, non-Markovian optical gain of a semiconductor laser is derived from recently developed time convolutionless (TCL) quantum kinetic equations for electron-hole pairs, including the many body effects. Plasma screening and excitonic effects are taken into account using an effective Hamiltonian in the time-dependent Hartree-Fock approximation. To calculate the optical gain, equation of motion for the interband pair amplitude is integrated directly. It is shown that the line shape of optical gain spectra is Gaussian for the simplest, non-Markovian quantum kinetics, and the optical gain is enhanced by the excitonic effects caused by the attractive electron-hole Coulomb interaction and the interference effects (renormalized memory effects) between the external driving field and the stochastic reservoir of the system. Enhancement of optical gain by the memory effects suggests the violation of strict energy conservation on a very short time scale, as compared with the correlation time of the system governed by non-Markovian quantum kinetics     

Influences of unconfined states on the optical properties ofquantum-well structures

The population of the unconfined states, with energies above the band edge of the barrier layers, can be significant in some regions of the active volume in high power lasers and amplifiers. This paper analyzes the influences of these states on optical properties, such as gain, refractive index, differential gain, and linewidth enhancement factor, for different quantum-well (QW) structures. Our results show that at high excitation levels, the unconfined band contributions to the real part of the optical susceptibility can be significant, especially in structures with weak quantum confinement potentials. This is in agreement with recent measurements of peak gain and carrier-induced refractive index change versus carrier density, for InGaAs-GaAs QW laser structures     

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

Staggered InGaN quantum wells (QWs) are analyzed as improved active region for light-emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band structure is based on a self-consistent 6-band $k{bf cdot}p$ formalism taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. Both two-layer staggered $hbox{In}_{x}hbox{Ga}_{1-x}hbox{N/}hbox{In}_{y}hbox{Ga}_{1-y}hbox{N}$ QW and three-layer staggered $hbox{In}_{y}hbox{Ga}_{1-y}hbox{N/}hbox{In}_{x}hbox{Ga}_{1-x}hbox{N/}hbox{In}_{y}hbox{Ga}_{1-y}hbox{N}$ QW structures are investigated as active region to enhance the spontaneous emission radiative recombination rate ($R_{rm sp}$) for LEDs emitting at 500 nm and 540 nm. Analysis of the spontaneous emission radiative recombination rate ($R_{rm sp}$ ) shows significant enhancement for both two-layer staggered InGaN QW and three-layer staggered InGaN QW, in comparison to that of the conventional $hbox{In}_{z}hbox{Ga}_{1-z}hbox{N}$ QW. The studies of the carrier lifetime indicate a significant reduction of the carrier lifetime for staggered InGaN QWs, which contribute to the enhancement of the radiative efficiency for both two-layer staggered InGaN QW and three-layer staggered InGaN QW LEDs emitting at 500 nm and 540 nm.      

Theoretical analysis of diffused quantum-well lasers and optical amplifiers

Diffused quantum-well (QW) distributed feedback (DFB) lasers and optical amplifiers will be theoretically analyzed in this paper. For DFB lasers, a design rule will be proposed and the validity of the design rule will be discussed with respect to changes in the injected carrier density. The range of grating period, which can be used in the design, is discussed. As a consequence, the maximum tuning range of the emission wavelength can be estimated without involving the time-consuming self-consistent simulation. The features of polarization independence of optical amplifiers achieved by using diffused QWs are also discussed. Our theoretical results successfully explain why polarization independence can achieve in the long-wavelength tail of the modal gain and absorption coefficient but not at photon energies above the transition edge. This explanation applies to other tensile-strained QWs for polarization-independent applications. The understanding is crucial for optimizing polarization-independent devices. To conclude, our analysis of the diffused QW optical devices demonstrates that QW intermixing technology is a practical candidate for not only realizing monolithic photonic integrated circuit, but also enhancing optical device performance.     

Amplified spontaneous emission spectroscopy in strainedquantum-well lasers

Amplified spontaneous emission spectroscopy is used to extract the gain and refractive index spectra systematically. We obtain the gain and differential gain spectra using the Hakki-Paoli method. The refractive index profile, the induced change in refractive index by an incremental current, and the linewidth enhancement factor are measured from the Fabry-Perot peaks and the current-induced peak shifts in the amplified spontaneous emission spectra. The measured optical gain and refractive index are then compared with our theoretical model for strained quantum-well lasers. We show that a complete theoretical model for calculating the electronic band structure, the optical constant, and the linewidth enhancement factor agrees very well with the experiment. Our approach demonstrates that amplified spontaneous emission spectroscopy can be a good diagnostic tool to characterize laser diodes, extract the optical gain and index profiles, and confirm material parameters such as the strained quantum-well band structure parameters for a semiconductor structure under carrier injection     

Coulomb enhancement in InGaAs-GaAs quantum-well lasers

It is shown that Coulomb enhancement (CE) has a significant influence on the spectral characteristics of optical gain and spontaneous emission in strained InGaAs quantum wells. CE-modified gain spectra are utilized to make an accurate prediction of the dependence of lasing wavelength on cavity length, Threshold-current predictions using the CE-modified gain-current relation show improved agreement with experiment     

Non-equilibrium quantum transport theory: current and gain in quantum cascade lasers

We have developed a self-consistent non-equilibrium Green’s function theory (NEGF) for charge transport and optical gain in THz quantum cascade lasers (QCL) and present quantitative results for the I-V characteristics, optical gain, as well as the temperature dependence of the current density for a concrete GaAs/Al_.15Ga_.85As QCL structure. Phonon scattering, impurity, Hartree electron-electron and interface roughness scattering within the self-consistent Born approximation are taken into account. We show that the characteristic QCL device properties can be successfully modeled by taking into account a single period of the structure, provided the system is consistently treated as open quantum system. In order to support this finding, we have developed two different numerically efficient contact models and compare single-period results with a quasi-periodic NEGF calculation. Both approaches show good agreement with experiment as well as with one another.     

InGaAs-GaAs quantum-dot lasers

Quantum-dot (QD) lasers provide superior lasing characteristics compared to quantum-well (QW) and QW wire lasers due to their delta like density of states. Record threshold current densities of 40 A·cm ^-2 at 77 K and of 62 A·cm^-2 at 300 K are obtained while a characteristic temperature of 385 K is maintained up to 300 K. The internal quantum efficiency approaches values of ~80 %. Currently, operating QD lasers show broad-gain spectra with full-width at half-maximum (FWHM) up to ~50 meV, ultrahigh material gain of ~10⁵ cm^-1, differential gain of ~10^-13 cm² and strong nonlinear gain effects with a gain compression coefficient of ~10^-16 cm³. The modulation bandwidth is limited by nonlinear gain effects but can be increased by careful choice of the energy difference between QD and barrier states. The linewidth enhancement factor is ~0.5. The InGaAs-GaAs QD emission can be tuned between 0.95 μm and 1.37 μm at 300 K     

Interdiffusion induced modification of surface-acoustic-waveAlGaAs-GaAs quantum-well modulators

A theoretical study of short period AlGaAs-GaAs diffused quantum-well (QW) absorption modulators operated by using surface acoustic waves (SAWs) is carried out in this paper. The as-grown QW structure is optimized and interdiffusion is used to fine tune the modulation performance. The results show that a stack of QWs can be developed at the top surface of the modulator to utilize the steep potential induced by SAWs. The optimized structure can also produce a large absorption change and thus a fast modulation speed for the same modulation depth. In comparison to previous results, the required surface acoustic wave has a longer wavelength and a lower power so that the fabrication of the interdigital transducer can be simplified. In addition, the use of interdiffusion can provide an useful fine adjustment to the operating wavelength, further enhancement of the modulation depth and an improvement in chirping with the only drawback of an increased absorption loss     

Carrier correlation effects in a quantum-well semiconductor lasermedium

This paper describes the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure. The approach uses the Semiconductor Maxwell Bloch equations to describe the interaction between the carriers and the laser field, in the presence of many-body Coulomb interactions. Coulomb correlation effects are treated at the level of quantum kinetic theory in the Markovian limit. This approach shows the presence of nondiagonal Coulomb correlation contributions, in addition to the familiar diagonal contributions giving rise to polarization dephasing     

Modeling and measurement of the wavelength-dependent output properties of quantum-well optical amplifiers: effects of a carrier-dependent escape time

We present a model for quantum-well (QW) semiconductor optical amplifiers (SOAs) that considers bidirectional field propagation and the carrier densities in the barrier and QW regions. Carrier capture from the barriers into the QWs and carrier escape from the QWs to the barriers are included by means of effective capture and escape times. The model incorporates the wavelength dependence of the optical response of the active region and the effects of spectral hole burning via an analytical approximation to the susceptibility of the active material, which allows one to very effectively include the wavelength dependence of the output properties of the SOA. The model is used to analyze the experimental results obtained for a multiquantum-well SOA. The simulations results show a good agreement with the experimental data when a carrier-density dependent escape time from the QW to the barrier regions is considered.     

Carrier diffusion and depletion effects on multiwave mixing insemiconductor lasers

A detailed theoretical treatment has been undertaken of multiwave mixing in semiconductor lasers, taking into account the effects of pump/probe depletion, carrier diffusion, usual gain saturation, nonlinear gain compression, total power dependence of the coupling coefficients as well as the longitudinal dependence of the nonlinear interaction. It is shown that the effect of carrier diffusion can considerably enhance the probe and conjugate reflectivity for detuning frequency near the relaxation oscillation frequency of the pump laser. It is demonstrated, in particular that, for relatively high input probe power, the probe and conjugate reflectivity can be enhanced significantly near the relaxation oscillation frequency of the pump laser, compared to that for low input probe power. Furthermore, both the probe reflectivity and the conjugate reflectivity show asymmetric characteristics with respect to the zero pump/probe frequency detunings. The pump/probe depletion effect plays an important role in determining the optical output power when the input probe power is larger than ~0.1 μW     

Modification of modal gain in InGaAs-GaAs quantum-well lasers dueto barrier-state carriers

This paper describes the effects of barrier-state carriers on the modal gain of InGaAs-GaAs quantum-well (QW) lasers emitting at 980 nm. Experimental studies and numerical simulations are used to examine several drive configurations, each having a unique effect on the laser response. These include compound drive current shapes, optical excitations and fast electrical drives with rise times shorter than 100 ps. We demonstrate that a large barrier-state carrier density affects the index of refraction sufficiently so as to cause a reduction in the confinement factor and modal gain which is large enough to turn the laser off     

Effect of nitrogen on the band structure and material gain of In/sub y/Ga/sub 1-y/As/sub 1-x/N/sub x/-GaAs quantum wells

The conduction subband structure of InGaAsN-GaAs quantum wells (QWs) is calculated using the band anticrossing model, and its influence on the design of long-wavelength InGaAsN-GaAs QW lasers is analyzed. A good agreement with experimental values is found for the QW zone center transition energies. In particular, a different dependence of the effective bandgap with temperature when compared to the equivalent N-free structure is predicted by the model and experimentally observed. A detailed analysis of the conduction subband structure shows that nitrogen strongly decreases the electron energies and increases the effective masses. A very small N incorporation is also found to increase the nonparabolicity, but this effect saturates for higher nitrogen contents. Both the In content and well width decrease the effective masses and nonparabolicity of the conduction subbands. Material gain as a function of the injection level is calculated for InGaAsN-GaAs QWs for moderate carrier densities. The peak gain at a fixed carrier density is found to be reduced, compared to InGaAs, for a small N content, but this reduction tends to saturate when the N content is further increased. For the gain peak energy, a monotonous strong shift to lower energies is obtained for increasing N content, supporting the feasibility of 1.55-/spl mu/m emission from InGaAsN-GaAs QW laser diodes.     

Large- and small-signal dynamic behavior of high-speeddual-polarization quantum-well semiconductor lasers

The transmission-line laser model is modified to model both transverse-electric (TE) and transverse-magnetic (TM) modes so that it is applicable to quantum-well (QW) dual-polarization lasers and polarization-insensitive semiconductor optical amplifiers (SOAs). The effects of carrier transport are also included in the model. The resulting dual-polarization transmission-line laser model is used to study large- and small-signal dynamic behavior of dual-polarization lasers. We find from large-signal simulations that the polarization asymmetry (ratio of the transverse-modal powers) varies on a nanosecond time scale in dual-polarization single-quantum-well (SQW) devices. We show that unequal transverse-modal differential gains and gain nonlinearities are responsible for this temporal polarization asymmetry. In addition, our numerical simulations show that the steady-state polarization asymmetry is a strong function of the gain nonlinearity. Small-signal dynamic simulations show that the modulation response of the polarization-unresolved output of dual-polarization SQW lasers follows that of the transverse mode with the lowest gain nonlinearity coefficient, regardless of the transverse-modal differential gains     

1 THz Modulation in InGaAsP Multiple Quantum Wells for 40 Gb/s Applications

The terahertz (THz) rate modulation of quantum well (QW) electrooptic modulators necessitates a new way of thinking about how the modulation field modulates light; specifically, an incident narrow-band (with respect to the modulation frequency) signal once modulated acquires frequency components separated from the input signal center frequency by multiples of the modulation frequency. In this paper, we discuss the design of the QWs comprising the modulator to maximize the output at such THz sidebands of the incident optical frequency in InGaAsP QW based devices. We present a theoretical treatment of the case in which the THz modulation frequency is out of resonance between any exci- tonic levels near those exploited for the optical modulation, thus enabling an adiabatic treatment of the modulated optical susceptibility. We show that THz sideband conversion efficiencies of ~1% may be possible.