Photostimulated luminescence properties of neutron image plates

The luminescence properties of two commercial neutron-sensitive image-plates based on Gd₂O₃-doped BaFBr:Eu²⁺ storage phosphors are examined. These are white Fuji plates and blue Fuji plates (BAS-ND) with Gd₂O₃ content by weight of 34% and 50%, respectively. Both plates show two maxima in the photostimulation spectrum near 500 nm and 600 nm, with the ratio of the peak responses (I_600 nm/I_500 nm) 1.39 and 0.53 for the white and blue plates respectively. The optimum wavelengths for photostimulation for the two phosphors are therefore different. The response of the blue plate is only 25% that of the white plate, if each is stimulated at its optimum wavelength.     

Irradiation effects on AlGaN HFET devices and GaN layers

AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with protons as well as carbon, oxygen, iron and krypton ions of high (68 and 120 MeV) and low (2 MeV) energy with fluences in the range from 1 × 10⁷ to 1 × 10¹³ cm^?2. High energy irradiation with protons, carbon and oxygen produced no degradation in devices while krypton irradiation at the fluence of 1 × 10¹⁰ cm^?2 resulted in a small reduction of 2% in the transconductance. Similarly, for GaN samples irradiated with protons, carbon and oxygen at high energy no changes were seen by XRD, PL and Hall effect, while changes in lattice constant and a reduction in PL intensity were observed after irradiation with high energy krypton. Low energy irradiation with carbon and oxygen at a fluence of 5 × 10¹⁰ cm^?2 results in small change in the device performance while remarkable changes in device characteristics are seen at a fluence of 1 × 10¹² cm^?2 for carbon, oxygen, iron and krypton irradiation. Similarly changes are also observed by XRD, PL and Hall effect for the thick GaN layer irradiated at the fluence of 1 × 10¹² cm^?2. The device results and GaN layer properties are strongly correlated.     

烧结气氛与二次烧结对光激励发光材料 BaFCl:Eu发光性能的影响

本文首先简单介绍了光激励发光材料BaFCl：Eu的发光机理，采用高温固相扩散的方法制备BaFCl：Eu，并分别从烧结气氛和烧结次数对发光性能的影响方面作了实验。得出了Eu^3＋对Eu^2＋的发光具有促进作用，采用二次烧结有利于增旨BaFCl：Eu的发光性能的结论。文中也对此从理论上进行探讨。     

Comparison of hot-carriers effects in soi and bulk devices using a photon emission technique

This paper concerns recent results on photon emission used for hot carriers degradation analysis. In a first part, we focus on quantitative light emission analysis on n- and p- channel MOSFETs for bulk and SOI technologies. On each device, the photon counts for different gate and drain voltages were measured and compared with the value of the substrate current. This shows that the measured value of the substrate current in SOI devices can be inaccurate. In a second part, we investigate light emission spectra for some specific biases. These measurements allow a clear comparison of the different technologies. Finally, a photon emission technique was used to analyse hot carrier degradation in circuits, the highest emissions are observed on NMOS transistors working at high frequencies, but emission have also been detected on PMOS transistors. A clear correlation with the working frequencies of the MOS has also been demonstrated.     

氮化镓微米晶须及纳米线的制备与研究

报道了利用CVD方法大量制备超纯氮化镓微米晶须及纳米线的最新结果.利用镍、铟及其化合物等做催化剂,将金属镓放置在氨气氛中1000℃左右进行反应,结果在衬底上获得了大量的氮化镓微米晶须,及纳米线.许多晶须还通过自组装形成了非常奇特的如梯子状的形貌.研究还发现,大部分氮化镓微米晶须的择优生长方向为<0001>方向(c轴方向).X射线衍射谱揭示,反应产物为非常纯的氮化镓晶体,而低温光致发光谱分析则发现,氮化镓微米晶须在520nm处有一个杂质发光峰.这一研究结果有助于了解氮化镓晶体的生长机理,并可望应用于微米、纳米蓝光发光二极管等器件.     

Blue and white light emission in Tm3+ and Tm3+/Dy3+ doped zinc phosphate glasses upon UV light excitation

A spectroscopic study based on photoluminescence spectra and decay time profiles in Tm³⁺ and Tm³⁺/Dy³⁺ doped Zn(PO₃)₂ glasses is reported. The Tm³⁺ doped Zn(PO₃)₂ glass, upon 357 nm excitation, exhibits blue emission with CIE1931 chromaticity coordinates, x = 0.157 and y = 0.030, and color purity of about 96%. Under excitations at 348, 352 and 363 nm, which match with the emissions of AlGaN and GaN based LEDs, the Tm³⁺/Dy³⁺ co-doped Zn(PO₃)₂ glass displays natural white, bluish white and cool white overall emissions, with correlated color temperature values of 4523, 10700 and 7788 K, respectively, depending strongly on the excitation wavelength. The shortening of the Dy³⁺ emission decay time in presence of Tm³⁺ suggests that Dy³⁺→Tm³⁺ non-radiative energy transfer occurs. By using the Inokuti-Hirayama model, it is inferred that an electric quadrupole-quadrupole interaction might be the dominant mechanism involved in the energy transfer. The efficiency and probability of this energy transfer are 0.12 and 126.70 s⁻¹, respectively.     

Study of the ability to field emission from diamond-like carbon layers and carbon nanotubes

The aim of this work was to study the relationship between parameters of the electron field emission and the film deposition method. In this study two methods were applied: classical radio frequency plasma-assisted chemical vapor deposition (RF PACVD) to produce diamond-like carbon (DLC) layers and chemical vapor deposition (CVD) to produce carbon nanotubes (CNT). DLC layers were grown on n-type silicon substrates and CNT were grown on n-type and p-type silicon substrates.Atomic force microscopy (AFM) and Raman spectroscopy were used to investigate the physical and chemical parameters of DLC films after deposition process. The electrical parameters of capacitors with the DLC layer as an insulator were extracted from the capacitance-voltage (C-V) and current-voltage (I-V) characteristics. Measurements of the field emission were performed after characterization of the layer properties.     

White light emission and electrical properties of silicon oxycarbide-based metal-oxide-semiconductor diode

White light emission from silicon oxycarbide-based metal-oxide-semiconductor diode has been realized in this work. Emitted light is visible to the naked eyes as the bias voltage is increased higher than 15 V. Electroluminescence intensity increases linearly with current density. According to the analysis of conduction mechanisms in device, electron-hole radiative recombination at twofold coordinated silicon lone-pair centers, neutral oxygen vacancies, and E_δ′ defect centers in film is responsible for the light emission.     

Preparation of grass-like GaN nanostructures: Its PL and excellent field emission properties

We here report highly pure and single crystalline grass-like gallium nitride (GaN) nanostructures obtained on silicon substrate via catalyst-assisted CVD route under NH₃ atmosphere inside horizontal tube furnace (HTF) by pre-treating the precursors with aqueous NH₃. The as-obtained GaN nanostructures were characterized by XRD, SEM, EDS, HRTEM and SAED. The field emission (FE) characteristics of grass-like GaN nanostructures exhibited a turn-on field of 7.82 V μm^− 1 and a threshold field of 8.96 V μm^− 1 which are quite reasonable for applications in electron emission devices, field emission displays and vacuum microelectronic devices. Room temperature photoluminescence (PL) measurements of grass-like GaN nanostructures exhibited a strong near-band-edge emission at 368.8 nm (3.36 eV) without any defects related emissions which shows its potential applications in optoelectronics.     

Top emission organic light-emitting devices with CsCl capping layer

We have developed top emission organic light-emitting devices using a CsCl capping layer on top of semitransparent Ca/Ag cathode. By using a CsCl capping layer, the transmittance of top electrode can be improved by 93%. While the electrical conduction characteristic of device is not influenced by the capping layer, the current efficiency increases with increasing the transmittance of Ca/Ag/CsCl cathode. For example, as the transmittance of top electrode increases from 55 to 91% by varying CsCl thickness, the current efficiency of green fluorescent top-emitting device increases from 8 to 18 cd/A.     

Thermoelectric properties and thermoelectric devices of free-standing GaN and epitaxial GaN layer

We studied the thermoelectric properties of free-standing GaN (fr-GaN) and epitaxial GaN layer (epi-GaN), and furthermore, we have fabricated thermoelectric devices using these materials. For fr-GaN, the maximum power factor was 7.7 × 10^− 4 W/m K² at 373 K, and for epi-GaN layer, the maximum power factor was 9.4 × 10^− 4 W/m K² at 373 K. The devices fabricated are (a) fr-GaN and chromel of 4 pairs, and (b) epi-GaN and chromel of 3 pairs. The maximum output power and the open output voltage were (a) 3.35 × 10^− 6 W and 2.76 × 10^− 2 V at ΔT = 153 K, and (b) 1.21 × 10^− 7 W and 1.71 × 10^− 2 V at ΔT = 153 K, respectively.     

Fabrication and performance of GaN electronic devices

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for applications in high power electronics capable of operation at elevated temperatures. Although the growth and processing technology for SiC, the other viable wide bandgap semiconductor material, is more mature, the AlGaInN system offers numerous advantages. These include wider bandgaps, good transport properties, the availability of heterostructures (particularly AlGaN/GaN), the experience base gained by the commercialization of GaN-based laser and light-emitting diodes and the existence of a high growth rate epitaxial method (hydride vapor phase epitaxy) for producing very thick layers or even quasi-substrates. These attributes have led to rapid progress in the realization of a broad range of GaN electronic devices, including heterostructure field effect transistors (HFETs), Schottky and p–i–n rectifiers, heterojunction bipolar transistors (HBTs), bipolar junction transistors (BJTs) and metal-oxide semiconductor field effect transistors (MOSFETs). This review focuses on the development of fabrication processes for these devices and the current state-of-the-art in device performance, for all of these structures. We also detail areas where more work is needed, such as reducing defect densities and purity of epitaxial layers, the need for substrates and improved oxides and insulators, improved p-type doping and contacts and an understanding of the basic growth mechanisms.     

High-temperature annealing of bulk GaN layers

The influence of high-temperature (1010°C) annealing in a flow of gaseous ammonia on the properties of bulk GaN layers, grown by chloride-hydride VPE and then separated from SiO₂ substrates, was studied using atomic force microscopy. The bulk (∼360-μm-thick) epitaxial GaN layers were synthesized in two steps: a first stage of nucleation and growth at a low temperature (530°C) followed by epitaxy at a high temperature (970°C). It was found that the annealing increases the nanorelief height and activates the donor-acceptor recombination on the surface of a GaN layer grown at the lower temperature and decreases the intensity of photoluminescence from the layer grown at the higher temperature.     

Sr/Ag semitransparent cathodes for top emission organic light-emitting devices

We have developed a semitransparent cathode for the top emission organic light-emitting devices using a Sr/Ag double layer prepared by the thermal evaporation technique. The Sr (8-10 nm)/Ag (10 nm) cathode shows the transmittance of 55-76% in the visible spectral region and the sheet resistance of about 12 Ω/□. The underlying Sr layer affects the growing characteristics of Ag layer, resulting in high optical transparency. The bis[2-(2′-benzothienyl)-pyridinato-N,C^3′]iridium(acetylacetonate) doped top emission electro-phosphorescent device with a Sr/Ag semitransparent cathode has been fabricated and studied.     

Investigation of emission location in top-emitting green organic light-emitting devices by optical analysis

A series of top-emitting organic light-emitting devices with different thicknesses of carrier transporting layers (N,N′-di(1-naphtyl)-N,N′-diphenylbenzidine, tris(8-hyroxyquinloine) aluminum (Alq₃)) and emitting layer (EML, 10-(2-Benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T)-doped Alq₃) were fabricated. C545T-doped Alq₃ was found to bring about double recombination peaks in EML. As the distance between EML and reflective anode was increased, the outcoupling efficiency greatly deviated from optically-simulated values due to charge imbalance in EML and optical loss at the EML/Alq₃ interface. The device with 30 nm of EML exhibited maximized outcoupling efficiency and further increase of EML thickness brought about decrease in efficiency due to decrease in hole-electron recombination at the EML/Alq₃ interface.     

Extremely narrowed spontaneous emission spectrum induced by elliptically polarized light

Abstract

We demonstrate the control of spontaneous emission from a five-level atom embedded in a modified reservoir under the action of a single control beam with elliptical polarization. For different initial-state preparations, we take into account the influence of the phase difference between the two circularly polarized components of the control beam on the behavior of spontaneous emission. For the ground initial states, the spontaneous emission spectrum usually shows ultranarrow central lines which are greatly enhanced. In contrast, for the excited initial states, these enhanced ultranarrow lines are significantly suppressed due to the destructive quantum interference. Furthermore, our numerical simulations indicate that the multipeak structure appears in the presence of the elliptically polarized control beam and external magnetic field. Such a scheme for controlling spontaneous emission may find applications in high-precision spectroscopy.     

GaN, ZnO and InN nanowires and devices

A brief review is given of recent developments in wide bandgap semiconductor nanowire synthesis and devices fabricated on these nanostructures. There is strong interest in these devices for applications in UV detection, gas sensors and transparent electronics.     

C基薄膜电子场发射的一般特性及发射模型

介绍了几种碳基材料的场发射特性及其发射模型.金刚石表面具有较低的或负的电子亲和势,因无法实现N型掺杂,难以用作电子发射材料.类金刚石膜及非晶碳膜材料经过"激活"后在表面形成具有较大场增强因子的熔坑,在几～几十V/μm的低阈值电场下得到非本征的电子发射,纳米结构的碳和碳纳米管本身具有较大的场增强因子,是较有前途的平面阴极场发射材料.碳基材料的导电性不同,遵循的发射模型不同.