Recording performance of discrete track patterned media fabricated by focused ion beam

We report on the recording performance of discrete track patterned media fabricated by focused ion beam (FIB). We investigated performance over a small area by spinstand read/write testing. Discrete track patterned regions show smaller magnetic track width and better signal separation between adjacent tracks and therefore higher track density than that of nonpatterned continuous media as a result of reduced side fringe effect and edge noise. We found that, at a designed groove depth of 4-8 nm, the shallow FIB etched grooves already provide good isolation between adjacent tracks, indicating the superiority of ion beam induced modification of magnetic properties in film media over physical modification of disk surface topography. This has implications for discrete track recording and media fabrication.     

Magnetostatic interactions in antiferromagnetically coupled patterned media

In an array of closely spaced magnetic islands as in patterned media, magnetostatic interactions play a major role in widening the switching field distribution and reducing the thermal stability. Patterned antiferromagnetically coupled (AFC) media provide interesting systems for studying the effect of magnetostatic interactions on the reversal of closely spaced AFC bits in an array, as AFC structure helps to reduce the remanent magnetization (M(r)), leading to reduced magnetostatic interactions. Here, we study the magnetic reversal of single domain-patterned AFC CoCrPt:oxide bilayer system with perpendicular magnetic anisotropy, by imaging the remanence state of the bits after the application of a magnetic field with magnetic force microscopy (MFM). The influence of magnetostatic fields from the neighboring bits on the switching field distribution (SFD) for an entity in a patterned media is studied by varying the stabilizing layer thickness of the AFC structure and bit spacing. We observe a distinct increase in stability and coercivity with an increase in stabilizing layer thickness for the 40 nm spaced bits. This demonstrates the effectiveness of the AFC structure for reducing magnetostatic interactions in patterned media, such that high thermal stability can be achieved by the reduced M(r), without writability issues.     

Patterned ion beam implantation of Co ions into a SiO2 thin film via ordered nanoporous alumina masks

Spatially patterned ion beam implantation of 190 keV Co(+) ions into a SiO(2) thin film on a Si substrate has been achieved by using nanoporous anodic aluminum oxide with a pore diameter of 125 nm as a mask. The successful synthesis of periodic embedded Co regions using pattern transfer is demonstrated for the first time using cross-sectional (scanning) transmission electron microscopy (TEM) in combination with analytical TEM. Implanted Co regions are found at the correct relative lateral periodicity given by the mask and at a depth of about 120 nm.     

Magnetization reversal in Pt/Co(0.5 nm)/Pt nano-platelets patterned by focused ion beam lithography

Arrays of ultrathin Pt/Co(0.5 nm)/Pt nano-platelets with lateral sizes ranging from 30 nm to 1 μm have been patterned by focused ion beam (FIB) lithography under a weak Ga(+) ion fluence. From polar magneto-optical Kerr microscopy it is demonstrated that nano-platelets are ferromagnetic with perpendicular anisotropy down to a size of 50 nm. The irradiation process creates a magnetically soft ring at the nano-platelet periphery in which domain nucleation is initiated at a low field. The magnetization reversal in nano-platelets can be interpreted using a confined droplet model. All of the results prove that ultimate FIB patterning is suitable for preparing discrete magnetic recording media or small magnetic memory elements and nano-devices.     

纳米光子结构软膜紫外光固化纳米压印

紫外光固化纳米压印是实现纳米结构批量复制的一种新技术．其特点是低成本和高分辨，而且可以达到极高的套刻精度．为了得到大面积图案的均匀复制，可用聚二甲基硅氧烷（PDMS）制备透光的压印软模板．其母版图案可由高分辨率电子柬曝光和反应离子刻蚀的方法在硅片基底上获得，然后用浇注的方法将图案转移到PDMS上．本实验特别发展了紫外光固化纳米压印适用于软膜压印的双层膜图型转移技术．该双层膜由廉价的光胶和聚甲基丙烯酸甲脂（PMMA）构成．对光胶层的压印可用普通的光学曝光仪实现．然后再将图案用反应离子刻蚀的方法转移到PMMA层中．为了证明方案的可行性，在两种不同材料的半导体基片上压印了三角晶格的光子晶体和准晶结构的图案，并用剥离的方法将它们转移到金属薄膜上，最后成功地进行了硅片刻蚀实验．相信这一纳米制做方法对大面积纳米光子结构和光学集成芯片的制造是普遍适用的．     

Materials processing by gas cluster ion beams

This paper discusses the principles and experimental status of gas cluster ion beam (GCIB) processing as a promising surface modification technique for practical industrial applications. Theoretical and experimental characteristics of GCIB processes and of related equipment development are described from the moment of neutral cluster formation, through ionization, acceleration and impact upon a surface. The impact of an accelerated cluster ion upon a target surface imparts very high energy densities into the impact area and produces non-linear effects that are not observed in the impacts of atomic ions. Unique characteristics of GCIB bombardment have been found to offer potential for various industrial applications that cannot be achieved by conventional ion beam processing. Among prospective applications are included shallow ion implantation, high rate sputtering, surface cleaning and smoothing, and low temperature thin film formation. Sputtering effects produced by cluster ion impact are particularly interesting. High sputtering yields and lateral distribution of sputtered atoms cause surface smoothing effects which cannot be achieved with monomer ion beams. Surface smoothing to atomic levels is expected to become the first production use of GCIB.     

Fabrication of Flyable Perpendicular Discrete Track Media

Discrete track media offers many potential recording advantages over conventional continuous media in hard disk drives. In this study, we present a novel fabrication process for discrete track perpendicular magnetic media via electron beam lithography, ion milling, and the use of a protective Al sacrificial layer. Physical characterization of the media confirms the process is able to produce patterned tracks with no damage to the media. Spin stand analysis verifies the disks are flyable and capable of recording sharp transitions without any degradation in the magnetic signal     

High performance of GaN-based flip-chip light-emitting diodes with hole-shape patterned ITO ohmic contact layer and AgIn reflector

The enhancement of light extraction efficiency is observed when the hole-shape patterned ITO ohmic contact layer and AgIn reflector is adopted in GaN-based flip-chip (FC) light emitting diodes (LEDs). ITO layer (140 nm) and AgIn (200 nm) was deposited on the top of p-GaN by in-line DC sputtering and electron beam evaporating system, respectively. The ITO ohmic contact layer showed a low specific contact resistance of 2.66 x 10(-5) Omega cm(-2) and high transmittance of >85% at visible spectral regions. The AgIn reflector exhibited a low specific contact resistance of 1.90 x 10(-5) Omega cm(-2) and high reflectance of approximately 84% at visible spectral regions. Comparing with unpatterned ITO/AgIn layer, the optical output power of GaN-based FC LEDs improves approximately 30% by the adoption of micro size hole-shape patterned ITO ohmic contact layer and AgIn reflector.     

Fabrication of discrete gallium nanoislands on the surface of a Si(001) substrate using a focused ion beam

A gallium focused ion beam (FIB) has been used to implant Ga at specific sites on the surface of undoped Si(001) substrates. Upon annealing at 600?°C, discrete nanoscale surface islands form within the FIB patterned regions when the total Ga ion dose, or fluence, is greater than 1.0 × 10(16) ions cm( - 2). The number of islands depends on the size of the irradiated region and a single island can be achieved for a FIB milled region that is 100 nm × 100 nm. The average sizes of the islands were found to range from 24.5 nm when exposed to a total ion dose of 1.2 × 10(16) ions cm( - 2) to 45 nm for a dose of 3.0 × 10(16) ions cm( - 2). We have confirmed that these surface islands are metallic Ga by performing a selective chemical etch that removes the islands and by transmission electron microscopy characterization. These patterned Ga surface templates could serve as nucleation sites for the lateral arrangement of discrete quantum dot structures.     

Direct fabrication of nanoscale bio-adhesive patterns by electron beam surface modification of plasma polymerized poly ethylene oxide-like coatings

In this study we present a method to produce nanostructured surfaces containing bio-adhesive features inside a non bio-adhesive matrix. The strategy is based on the combination of low pressure plasma polymerization and electron beam lithography processes and allows the fabrication of the structured materials in just two steps without using any solvents. In a first step, a thin protein-and-cell-repelling coating (～10?nm) is obtained by plasma polymerization of Di-glyme. Then, in a second step, the bio-adhesive properties of the layer are tuned by monitoring the concentration of ether bonds of the film by irradiating it locally by different irradiation doses with an electron beam. Time-of-flight secondary ion mass spectroscopy and atomic force microscopy analysis have been used to characterize the produced surfaces. Experiments with a model protein (bovine serum albumin) on the patterned surfaces show preferential adhesion to the irradiated regions, indicating the potential of this simple technique for the development of highly compacted sensitive bio-sensing devices.     

Oxidation processes using ion beams

Recent work demonstrates that reactive ion beams can be used to grow compound layers on metal and semiconductor surfaces. Ion beams are characterized by easily controlled ion flux and energy, with a narrow energy spread. Also, the ion species are delivered to the sample in a low pressure environment. These advantages allow greater control and simpler analysis of compound formation processes than other techniques do. Ion beam oxidation is reviewed and compared with thermal, plasma and r.f. oxidation and with oxidation by ion implantation. The ion energy range of several electronvolts to hundreds of electronvolts is suitable for depositing the oxidizing species in the metal in an active state, and simultaneous sputtering can produce a self-limiting oxide thickness when the sputtering yield and oxidation rate are in proper balance. The process of ion beam oxidation is also discussed in light of the etching behavior of metals under combined inert gas and oxygen ion bombardment and of the related technique of reactive ion beam sputter deposition using ion bombardment of a growing film. Additional examples are drawn from the use of other reactive ion beam species, including nitrogen and hydrogen.     

低能离子束表面改性对聚碳酸酯(PC)粘接性能的影响

利用氩氧混合低能离子束对双酚A型聚碳酸酯(PC)透明材料进行表面改性,并用自制丙烯酸酯胶黏剂表征了改性前后的粘接性能.结果表明:改性后的PC与丙烯酸酯胶黏剂的压剪强度得到了明显的改善.经分析,粘接性能的改善是由于低能离子束表面改性后的PC表面润湿性能的改善、表面活性的提高、表面弱电层的剥蚀和表面微交联层的生成引起的.     

Direct Magnetic Patterning due to the Generation of Ferromagnetism by Selective Ion Irradiation of Paramagnetic FeAl Alloys

Sub‐100‐nm magnetic dots embedded in a non‐magnetic matrix are controllably generated by selective ion irradiation of paramagnetic Fe₆₀Al₄₀ (atomic %) alloys, taking advantage of the disorder‐induced magnetism in this material. The process is demonstrated by sequential focused ion beam irradiation and by in‐parallel broad‐beam ion irradiation through lithographed masks. Due to the low fluences used, this method results in practically no alteration of the surface roughness. The dots exhibit a range of magnetic properties depending on the size and shape of the structures, with the smallest dots (<100 nm) having square hysteresis loops with coercivities in excess of µ₀H_C = 50 mT. Importantly, the patterning can be fully removed by annealing. The combination of properties induced by the direct magnetic patterning is appealing for a wide range of applications, such as patterned media, magnetic separators, or sensors.     

Magneto-optical stokes polarimetry and nanostructured magnetic materials

Stokes parameters fully characterize the polarization state of light in an experimentally accessible manner. Photoelastic modulator (PEM) based Stokes polarimetry offers a very high sensitivity which is particularly suitable for the investigation of the magneto-optical properties of nanostructured magnetic materials. In this paper, we shall describe a robust methodology recently developed by us that utilizes a dual PEM setup. As an example of its application, we report on the magneto-optical characteristics of focused Ga ion beam patterned Fe films. We have investigated Ga ion irradiation of single-layer polycrystalline Fe films deposited on Si3N4 substrates, which allows us to study the effects of ion implantation with minimum added complications. Complemented by structural and other characterization techniques, the absolute measurement of magneto-optical effects through the determination of Stokes parameters has enabled us to effectively separate the various contributions from film thinning due to sputtering, structural modifications and compositional changes caused by Ga incorporation. A comparison is also made between the magneto-optical behavior of patterned thin films and that of anodic aluminum oxide embedded magnetic nanowire arrays.     

Intrinsic magnetic anisotropy versus coupling in arrays of closely spaced circular Fe/GaAs(110) dots,patterned by focused ion beam

We present the results of a detailed magneto-optical Kerr effect and Brillouin light scattering investigation of an epitaxial Fe/GaAs(110) film, 9 nm thick, achieving a quantitative determination of its anisotropy constants. Starting from this film, three different arrays of circular dots with diameter of 200 nm and interdot spacings of 200, 60 and 30 nm, have been produced by focused ion beam patterning. The modification of both the magnetization curves and the spin wave spectrum of the patterned specimens are discussed in terms of structural imperfections, intrinsic magnetocrystalline anisotropy and interdot dipolar coupling.     

Collision-induced dissociation of intact duplex and single-stranded siRNA anions

A tandem mass spectrometry approach is demonstrated for complete sequencing of a model small interfering RNA (siRNA) based on ion trap collisional activation of intact single-stranded anions. Various charge states of the siRNA duplex and the individual strands were generated by nanoelectrospray (nano-ESI). The siRNA duplex anions were predominantly dissociated into the sense and antisense strands by collisional activation. The characteristic fragment ions (c/y- and a-B/w-ion series) from both strands were observed when higher activation amplitude was applied and when beam-type collisional activation was examined; however, the coexistence of fragment ions from both strands complicated spectral interpretation. The effect of precursor ion charge state on the dissociation of the individual sense and antisense strand siRNA anions was studied using ion trap collision-induced dissociation under various activation amplitudes. Through the activation of relatively low charge state precursor ions at relatively low excitation energy, selective backbone dissociation predominantly via the c/y channels was achieved. By applying relatively high excitation energy, the a-B/w channels also became prominent; however, the increase in spectral complexity made complete peak assignment difficult. In order to simplify the product ion spectra, proton-transfer reactions were applied, and complete sequencing of each strand was achieved. The application of tandem mass spectrometry to intact single-stranded anions demonstrated in this study can be adapted for the rapid identification of other noncoding RNAs in RNomics studies.     

Ion-bombardment modification of surface morphology of solids

Ion bombardment modification of surface geometrical structure, i.e. surface roughness alteration (Part 1) and changes in surface shape (this paper) are considered. Two surface shape alteration methods, masked and maskless pattern etching, are described. They have been applied to modify various kinds of targets, including metals (99.9% aluminium and 99.9% titanium), metal alloys (stainless steel of 1H18N9T and SS 316 LC), alumina ceramic (96% Al₂O₃) and Teflon. The results of experiments, where narrow beam glow discharge (GD) and broad beam Kaufman type guns have been used as ion sources, are presented. Approximation of a real surface shape profile by a so-called mean line, which is very helpful in the case of ion patterned but extremely rough surfaces, is also discussed. Finally, the practical aspects of ion bombardment modification of surface shape phenomenon, i.e. its application to sputtering yield and sputtering velocity measurements, are shown.     

Thermal stability improvement for longitudinal magnetic recording media

This paper reports and discusses the effects of M/sub r/t cancellation and bottom/top magnetic layer thickness ratio on thermal stability and recording characteristics of low-noise synthetic antiferromagnetic (SAF) longitudinal recording media. It is shown that by proper design and process, SAF media with low M/sub r/t cancellation can deliver excellent overall recording performance with acceptable thermal stability. We present a unique approach to significantly improve the thermal stability of SAF media with low M/sub r/t cancellation by adjusting the bottom/top magnetic layer thickness ratio. Increasing the bottom/top magnetic layer thickness ratio significantly improves amplitude decay rate and media coercivity temperature dependence with little sacrifice in recording performance.     

Conductive polymer patterned media fabricated by diblock copolymer lithography for scanning multiprobe data storage

A conductive polymer dot pattern has been fabricated as a patterned medium using diblock copolymer lithography (DCL) for scanning multiprobe data storage systems (SMDSSs). DCL can easily provide a higher dots pattern density than that obtained using electron beam lithography. For DCL, the microphase-separated structure of polystyrene-block-polymethylmethacrylate is utilized. Then, the closed dot pattern of polyaniline (PANI) with a center to center distance of adjacent dots of 30?nm is fabricated by DCL. Electrical modification experiments of the fabricated PANI dots are demonstrated using scanning probe microscopy (SPM). As a result, the conductivities of the modified dots are selectively changed by applying modification voltages with the tip of the SPM probe. Recording on the conductive polymer with 30?nm pitch at the minimum can be demonstrated, which corresponds to a recording density of ～700?Gbits?inch(-2). These results show that the conductive polymer patterned medium has the potential ability to achieve high-density recording for SMDSSs.     

Auger electron spectroscopy and secondary ion mass spectrometry depth profiling with sample rotation

Recently, there has been a rapid increase in the application of multilayered structured materials, as opposed to bulk materials, in many areas of technological development. Accurate characterization of the structure and composition of advanced multilayers such as superlattices, quantum wells, contacts, and coatings is important for materials and device fabrication technology. Surface analysis techniques including Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy, and secondary ion mass spectrometry (SIMS) in conjunction with ion beam sputtering (sputter depth profiling) are at present the most widely used methods for characterization of modern multilayer thin film materials and devices. Ion-beam-induced surface topography, however, can limit depth resolution, and with SIMS, can also cause changes in the secondary ion yield. These changes are due to the high sensitivity of secondary ion yield to the local angle of incidence on sputter-roughened surfaces. Degradation of depth resolution and changes in secondary ion yields during sputter depth profiling have often limited studies of thin film interdiffusion, segregation, oxidation at interfaces, and impurity effects. Much theoretical and experimental work has been carried out to try to improve depth resolution including the use of low ion beam energy, high angle of incidence, and two ion guns. Recent studies of AES and SIMS with sample rotation have shown that depth resolution can be improved substantially and that constant secondary ion yields in SIMS can be achieved. We will first provide an overview of the studies made by various groups to improve depth resolution of metal multilayers using AES with rotation. Next we will review recent investigations of SIMS using sample rotation including studies of the effects of sample rotation on O₂⁺ ion-beam-induced topography, secondary ion yield, and the depth resolution of electronic, metallurgical and dielectric materials. The results presented demonstrate that SIMS with sample rotation provides constant secondary ion yield, and depth-independent depth resolution because sample rotation prevents ion-beam-induced roughness and reduces the effect of the inhomogeneity of low energy ion beams.