大用户综合接入技术建设方案

随着各工商企业、公司、学校、银行等单位业务的扩展，高速的数据和语音接入巳成为迫切的需求，而这些大用户的接入，不需要运营商具备象住宅小区和家庭用户接入那样密集遍布的线路资源，尤其对于各新兴的缺乏普遍线路资源的电信运营商，大用户接入是投入资金少、见效快的一类业务。     

SURPASS hiX5300 M200户外宽带“一体化”接入系统

一、引言 根据对北京等省市地区的需求调查分析,随着AD-SL业务大大规模布放,许多实际用户由于接入距离过长或线路质量本身等原因,申请的业务不能得到满意的保障,用户投诉率较高,导致ADSL业务不能稳定的开展。同时,更加丰富的宽带业务的发展也要求运营商不断提升ADSL接入速率,从而对ADSL的稳定接入距离和高     

M200户外宽带"一体化"接入系统开发完成

随着国内ADSL的大规模布署，许多用户由于接入距离过长或线路质量问题等原因，业务质量不能得到满意的保障，用户投诉率较高；同时，宽带业务的发展也要求运营商不断提升ADSL接入速率，从而对ADSL的接入距离和用户铜缆质量提出了更高的要求。为了避免更换低品质用户电缆给运营商带来的巨大工作量，就近布放     

综合业务复用设备提升新运营商的竞争力

在新兴电信运营商与传统电信运营商竞争过程中,仅仅为用户提供传统的语音接入服务并不具有太大的竞争力,更何况在语音接入方面,传统的电信运营商有着极大的资源优势。因此,新兴的电信运营商必须更注重于其他一些业务,另辟蹊径为用户提供服务。而为用户、特别是大用户提供语音、数据、图像、网络的综合业务接入就是一个很好的切入点。另外,拥有自己的网络资源的运营商也乐意把自己的网络资源出租给大用户来使用。当然,这里所指的大用户一般是指大企业用户,他们有将不同地点的业务进行互连的要求。而且这些业务往往类型比较复杂,但每…     

全业务运营下城域网的接入及应用

全业务运营已经成为重组后各运营商转型的重要机会,城域网将成为电信运营商除移动通信以外的投资热点,各大电信运营商都在利用自己的城域网大力发展接入用户的宽带化,试图为将来全业务信息化运营打下战略基础。     

无线宽带的商业前景：是喜是忧？

2002年中国的电信业依旧如火如荼,宽带产业更是其中一道亮丽的风景线。各大运营商在拓展宽带城域网业务的同时,又将眼光投向了一块新的业务——无线宽带接入。无线宽带接入是实现宽带网络接入的一种快捷方式,通过它,电信运营商可以为用户提供更为灵活的、满足多种带宽需求的接入业务,并可以实现语音和数据业务集成。因其大容     

用网络光端机实现大用户接入

Internet业务的爆炸式增长，促进了传统电信网络和计算机网络的竞争与融合，使网络的发展趋向业务层和传送层的分别优化，独立发展，边缘层趋向融合。这种趋势导致了不同的网络层次适合于不同的拓扑结构的结果。在电信运营商的网络发展中，环网和星网的定位是不同的，其中星网在大用户接入中具有明显的优势，符合星形大用户网接入的大用户业务是各运营商的利润增长点。     

ITU Telecom World 2006瑞斯康达再展辉煌

北京瑞斯康达科技发展有限公司近日在ITU Telecom World2006展览会上向来自全球的运营商和专业用户展示了公司在接入层上的丰富的产品线以及优秀的解决方案，重点展示了城域以太网接入方案、CWDM解决方案、基于E1线路的以太网接入解决方案、SDH接入解决方案、TDM网多业务接入方案、MSAP解决方案等6大接入方案。     

建立基于物理层的铜缆线路管理体系(上)--为电信运营提供实时准确信息

铜缆资源是电信运营商宝贵的资产之一，近九成的固定电信业务需要依靠铜缆接入用户。建设完整的线路铜缆管理和测试系统是电信运营商进行日常生产的需要，是电信运营商开发业务的基础，本文从电信运维的角度，资源管理的需要以及在深入分析铜缆线路管理特点的基础上，结合广东电信的实际情况和借鉴其它运营商的成功经验，提出了一套基于物理层的切实可行的管理体系。     

中国移动IP城域网演进方案研究

当前,各运营商已经形成了普遍的共识:数据业务将取代话音业务成为运营商的主营业务、宽带接入将取代窄带接入成为主要的接入方式。以中国电信、中国移动以及中国联通为代表的网络运营商利用其已经建立的覆盖范围广阔的用户接入网络,在家庭用户接入方面攻城掠地。在普遍看好的商业用户的接入方面,各运营商更进行了激烈的竞争,中国网通的千栋楼接入计划就是这方面竞争的一个缩影。面对激烈的竞争形势,作为主要运营商之一的中国移动如何发掘数据业务需求,并采用合适的技术和网络架构来发展自身的宽带业务,成了急需解决的问题。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.