廿年回顾——机电部十三所研制GaAs MES FET和GaAs IC概况

1 引言 微波小功率低噪声晶体管和微波功率晶体管是机电部十三所传统的研究领域之一。作为主要的三端微波半导体器件之一的硅微波器件在六十年代末期低噪声器件已趋成熟,器件性能已经接近理论设计的物理极限。1966年,美国的米德提出砷化镓金属半导体场效应晶体管,或称砷化镓场效应管(简称GaAsMES FET)。砷化镓材料在迁移率等方面的性能比硅材料优越得多,GaAs MES FET的微波性能更使硅微波器件望尘莫及,因此,     

砷化镓微波器件发展动态

在半导体器件的发展中,最初所用的材料主要是元素半导体锗。在1960年后,元素半导体硅的材料和器件工艺迅速发展起来,很快在半导体器件研制中占主要地位。目前也还在继续发展。但是,十多年来,化合物半导体的发展是很值得重视的。特别是Ⅲ—Ⅴ族化合物半导体材料中的砷化镓已在器件研制中取得了一定成果。砷化镓由于电子迁移率高、禁带宽等优点适于制造高频、大功率和高温器件。在一些器件中采用砷化镓材料后,获得了比同类锗、硅器件更高的性能。而且由于砷化镓特殊的能带结构,又发展了     

GaAs市场及GaAs材料价格

<正> 虽然化合物半导体器件生产(主要是光电与微波分立器件)已经发展到年产量大于20多亿美元的水平,但是,集成电路用的砷化镓衬底仍仅占半导体晶片市场的一小部分。原始材料的成本与质量问题始终是GaAs IC器件定价时的关键因素,至今这些因素仍极大地限制了GaAs IC工艺的推广。最近,40多家半导体生产企业就此进行了讨论并开始推行改革方法来有效地解决材料的价格问题。 1987年年中以来,硅上砷化镓(GaAson-Si)技术已从实验室转入生产,分子束外延(MBE)工艺也已进入市场。这两项技术     

微波半导体器件国内外发展动态及应用（一）

本文主要介绍微波半导体器件的低噪声接收器件、微波发射器件、微波控制器件和新型微波器件等研究与应用状况,并对这些器件的发展作一概略展望.     

微波半导体器件国内外发展动态及应用(二)

本文主要介绍微波半导体器件的低噪声接收器件、微波发射器件、微波控制器件和新型微波器件等研究与应用状况,并对这些器件的发展作一概略展望.     

压电半导体上耗尽型表面波换能技术

一、引言砷化镓材料技术的进展,促使砷化镓微波集成电路、电荷耦合器件以及数字集成电路等技术的快速发展。砷化镓等Ⅲ-V族化合物半导体又具有内在的压电特性,因此为声表面波技术与半导体集成电路技术相结合并开发研制新型信号处理器件和分系统提供了新的可能性。但是,在载流子浓度较高的压电半导体上应用声表面波技术中传统的叉指换能器结     

前言

<正>一代材料催生一代器件,引领一代产业。以硅、锗和砷化镓等半导体材料为代表的光电器件在过去几十年里对社会发展产生了深远影响,广泛地应用于集成电路、光电子与微电子等领域,形成了规模庞大的半导体产业集群。然而,这些光电器件的部分关键性能仍受限于材料的本征禁带宽度,更大的禁带宽度成了材料迭代的诉求。因此,发展宽禁带半导体材料成为突破硅、锗和传统Ⅲ-Ⅴ族化合物半导体器件瓶颈的关键,并与硅集成电路进行异质集成,拓展更为广泛的应用空间。硅、锗和传统的Ⅲ-Ⅴ族化合物半导体的高速发展得益于高质量单晶同质衬底材料,极低的缺陷密度保证了半导体器件的优异性能。     

高功率微波效应的多物理场建模方法研究

为了实现对微波器件高功率微波效应的分析,主要从不同尺度半导体器件和波导器件出发,基于具有谱精度的谱元时域法,开展从微米尺度到纳米尺度半导体器件电热耦合一体化分析的方法以及高功率微波气体放电效应及抑制机理的研究.得到了半导体器件在电磁信号作用下发生的电热参数分布变化规律和微波器件在高功率微波下发生的气体放电及其抑制机理,根据以上相关效应机理,可为复杂电磁环境中的器件设计提供理论指导.     

氮化镓微波功率器件研究动态(上)

氮化镓微波功率器件是继砷化镓微波功率器件之后在21世纪新发展起来的微电子领域的研发热点,追踪研究了美国目前正在进行的"氮化电子下一代技术"计划、日本正在进行的氮化镓微波器件科研项目、欧洲"KORRIGA"及"GREAT"项目近况,总结了氮化镓微波功率器件的发展趋势.     

砷化镓单片微波集成电路取得初步成果

<正>随着砷化镓材料工艺和肖特基势垒栅场效应管工艺的臻于成熟,近几年来国外对砷化镓单片微波集成电路的研究兴趣越来越大.由于采用集成电路工艺手段,能将包括有源器件和无源元件的微波部件或者分机同时成批地制作于尺寸不大的砷化镓芯片上,所以人们预计这种单片集成电路近期内在卫星电视广播家用接收机和相控阵雷达等领域内具有潜在的优越性.     

今日SiC电子学

ＳｉＣ是近几年迅速发展的一种半导体材料,在微波功率器件、功率电子开关器件、高温工作器件等方面比Ｓｉ和ＧａＡｓ具有更大的优势。本文介绍了ＳｉＣ材料特性、材料制备及目前器件研制水平。     

固态微波毫米波、太赫兹器件与电路的新进展

固态微波毫米波、太赫兹器件与电路是微电子、纳电子领域的战略制高点之一,SiCMOS技术进入纳米加工时代,GaAs,InP材料的"能带工程"(超晶格、异质结),GaN材料的宽禁带和界面特性以及石墨烯纳米级新材料的创新发展都深刻影响着固态微波毫米波、太赫兹器件与电路的进展。描述了固态微波、毫米波和太赫兹器件与电路当前发展的新亮点,包括纳米加工技术、石墨烯新材料、GaN MMIC功率合成突破3 mm频段百瓦级、三端器件进入太赫兹和两端器件倍频链突破2.7 THz微瓦功率。并重点就当前发展的RF CMOS,SiGe HBT,LDMOS,GaAsPHEMT,GaAs MHEMT,InP HEMT,InP HBT,GaN HEMT,GFET和THz倍频链等10个领域的发展特点、2011年最新发展以及未来发展趋势进行介绍。     

The potential of diamond and SiC electronic devices for microwaveand millimeter-wave power applications

The potential of SiC and diamond for producing microwave and millimeter-wave electronic devices is reviewed. It is shown that both of these materials possess characteristics that may permit RF electronic devices with performance similar to or greater than what is available from devices fabricated from the commonly used semiconductors, Si, GaAs, and InP. Theoretical calculations of the RF performance potential of several candidate high-frequency device structures are presented: the metal semiconductor field-effect transistor (MESFET), the impact avalanche transit-time (IMPATT) diode, and the bipolar junction transistor (BJT). Diamond MESFETs are capable of producing over 200 W of X-band power as compared to about 8 W for GaAs MESFETs. Devices fabricated from SiC should perform between these limits. Diamond and SiC IMPATT diodes also are capable of producing improved RF power compared to Si, GaAs, and InP devices at microwave frequencies. RF performance degrades with frequency and only marginal improvements are indicated at millimeter-wave frequencies. Bipolar transistors fabricated from wide bandgap material probably offer improved RF performance only at UHF and low microwave frequencies     

An introduction to GaAs/GaAlAs HBTs for power applications

This paper presents a brief introduction to GaAs/GaAlAs heterojunction bipolar transistors (HBTs) for microwave and millimetre-wave power applications. The theoretical advantages of the heterojunction are outlined and the benefits of its incorporation in DC, RF and power devices are discussed. The problems inherent in the realization of HBTs in terms of device design, epitaxial material growth and device fabrication are discussed and the performance characteristics for practical devices presented. The paper concludes with a look at state-of-the-art GaAs/GaAlAs HBT performance and its standing with respect to the competing technologies of the metal semiconductor field effect transistor (MESFET) and the high electron mobility transistor (HEMT).     

Variable Frequency Microwave and Convection Furnace Curing of Polybenzoxazole Buffer Layer for GaAs HBT Technology

Photosensitive polybenzoxazole (PBO) film has been used in GaAs heterojunction bipolar transistor (HBT) technology for stress buffer and mechanical protection layer applications. However, this film needs to be cured at high temperatures for a long period of time in order to obtain its desired excellent material characteristics. High-temperature curing can result in degradation to the electrical characteristics and performance of the underlying GaAs devices due to limited thermal budget. In this paper, we have characterized the effects of curing the PBO film on GaAs HBT wafers using a conventional convection furnace and using a variable frequency microwave (VFM) furnace. The results show that a VFM cure can achieve similar excellent physical, mechanical, thermal, and chemical material characteristics at a lower curing temperature and in a much shorter time, as compared to convection furnace curing, therefore resulting in minimal GaAs device degradation. Based on these results, an optimum curing condition using the VFM method can be obtained that satisfies both stress buffer layer material and device requirements for GaAs HBT technology.     

X波段砷化镓场效应振荡管

X波段GaAs场效应振荡管是一种专门用于各种微波固体振荡电路的新型器件,尤其对X波段GaAsFET电压控制振荡器(VCO)和介质谐振器振荡器(DRO)更为适合。 本文在对有关资料分析的基础上,提出了设计这一器件的基本原则;概述了器件的基本结构;介绍了器件的参数研究结果和电路应用情况。用该器件制作的X波段FET VCO,得到了800MHz以上的电调范围,在整个电调范围内,输出功率为30～50mW,功率起伏小于1.5dB。     

高增益、高栅-漏击穿、低噪声微波砷化镓场效应晶体管

本文简要介绍了CX502N型微波砷化镓场效应晶体管的设计、特性与制造。器件采用了新的“积木式”台面结构,减小了栅-漏反馈电容。测试表明,器件具有高增益、高栅-漏击穿及低噪声特性。此外,文中还给出了与CX502N GaAs MESFET类似的器件CX503 GaAs MESFET的一些结果。     

Reliability of III–V based heterojunction bipolar transistors

This paper reviews the reliability of III-V based heterojunction bipolar transistors (HBTs). These devices have many potential advantages over other solid-state microwave devices. However, because of the tradeoff between performance and reliability, they are not being used to any great extent in power microwave applications. In the type of III-V HBT device most fully developed, the AlGaAs/GaAs HBT, leakage currents play a major role in the dominant mode of degradation. Because low-frequency noise is related to these leakage currents it has been used extensively in the analysis of the performance and reliability limitations of these devices. The reliability of other types of III-V HBT devices, such as InGaP/GaAs and InP based devices, is also discussed.     

Compound semiconductors for low-noise microwave MESFET applications

In order to determine the low-noise potential of microwave MESFET's fabricated from materials other than GaAs, a one-dimensional FET model is employed. From material parameters and device geometry the model enables the calculation of a small-signal equivalent circuit from which performance information is acquired. Material parameters, as predicted from Monte Carlo calculations, are used to simulate 1-µm devices fabricated from GaAs as well as InP, Ga0.47In0.53As, InP0.8As0.2, Ga0.27In0.73P0.4As0.6, and Ga0.5In0.5As0.96Sb0.04. Results obtained from simulations comparing a Ga0.5In0.5As0.96- Sb0.04device to an equivalent GaAs device indicate that a decrease in minimum noise figure of almost a factor of two is possible. Considerable improvement in noise performance over a GaAs device is also predicted for devices fabricated from Ga0.47In0.53As and Ga0.27In0.73P0.4As0.6. In addition, the quaternary and ternary devices as well as the InP device should exhibit superior gain and high-frequency performance compared to GaAs devices.     

On the speed and noise performance of direct ion-implanted GaAsMESFETs

Recent advances in high-speed and ultra-low-noise performance of GaAs MESFETs are reviewed. Experimental results showing that the current gain cutoff frequency and noise figure achieved by direct ion-implanted GaAs MESFETs are equal to or better than those achieved by GaAs HEMTs are presented. Detailed cryogenic-temperature microwave measurements of F_t on HEMTs and MESFETs are reported, showing a similar dependence of the effective velocity with temperature. It is concluded that the transport properties of the high electron mobility in the two-dimensional electron gas in HEMTs have been misinterpreted for high-speed device operation, and that the high-field velocity is the most important parameter for high-speed device operation. It is the fundamental Γ-L valley separation of the material and the associated effectiveness, either GaAs or InGaAs, that limit the high-field velocity and thus the speed of the devices