Structural evolution of Aun (n = 29–35) clusters: A transition from hollow cage to amorphous packing

The structural evolution and competition between the hollow cage, amorphous, fcc-like and tubular structures for medium-sized Au_n (n = 29–35) clusters were investigated using density functional theory combined with empirical genetic algorithm search. Au_n (n = 29–32) clusters prefer the hollow cage structures. Amorphous core–shell configurations prevail over other kinds of structural motifs for Au_n (n = 33–35). A transition from hollow cage to amorphous packing occurs at n = 33. The size-dependent HOMO–LUMO gap, vertical ionization potential and electron density of states were discussed to illustrate the relationship between the electronic properties and the geometry structures.     

Structural and optical properties of In doped Se–Te phase-change thin films: A material for optical data storage

Se_75−xTe₂₅In_x (x = 0, 3, 6, & 9) bulk glasses were obtained by melt quench technique. Thin films of thickness 400 nm were prepared by thermal evaporation technique at a base pressure of 10⁻⁶ Torr onto well cleaned glass substrate. a-Se_75−xTe₂₅In_x thin films were annealed at different temperatures for 2 h. As prepared and annealed films were characterized by X-ray diffraction and UV–Vis spectroscopy. The X-ray diffraction results show that the as-prepared films are of amorphous nature while it shows some poly-crystalline structure in amorphous phases after annealing. The optical absorption spectra of these films were measured in the wavelength range 400–1100 nm in order to derive the extinction and absorption coefficient of these films. It was found that the mechanism of optical absorption follows the rule of allowed non-direct transition. The optical band gap of as prepared and annealed films as a function of photon energy has been studied. The optical band gap is found to decrease with increase in annealing temperature in the present glassy system. It happens due to crystallization of amorphous films. The decrease in optical band gap due to annealing is an interesting behavior for a material to be used in optical storage. The optical band gap has been observed to decrease with the increase of In content in Se–Te glassy system.     

Optical constants of thermally evaporated Se–Sb–Te films using only their transmission spectra

Amorphous Se_82 ? xTe₁₈Sb_x thin films with different compositions (x = 0, 3, 6 and 9 at.%) were deposited onto glass substrates by thermal evaporation. The transmission spectra, T(λ), of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. Based on the use of the maxima and minima of the interference fringes, a straightforward analysis proposed by Swanepoel has been applied to derive the optical constants and the film thickness. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple and DiDomenico model. Tauc relation for the allowed non-direct transition describes the optical transition in the studied films. With increasing antimony content the refractive index increases while the optical band gap decreases. The optical band gap decreases from 1.62 to 1.26 eV with increasing antimony content from 0 to 9 at.%. The chemical-bond approach has been applied successfully to interpret the decrease of the optical gap with increasing antimony content.     

Photoinduced non-linear optical monitoring of novel semimagnetic semiconductors Pb1−xYbxX (X = S,Se, Te)

It was revealed that photoinduced non-linear optical methods may be used as a sensitive tool for investigations of low temperature semiconductor-isolator phase transformation. This was experimentally demonstrated using a method of photoinduced optical second harmonic generation, where the photoinducing regime was done by polarized nitrogen laser. The physical insight of the method is explained by the interaction of polarized optical field with boson sub-systems (phonon and magnons) near temperature of the phase transformation. Comparing low temperature dependence of specific heat for Pb_1−xYbX (X = S, Se, Te) with the ones for the photoinduced non-linear optical methods we have found substantially better temperature recognition of corresponding phase transformations and the output non-linear optical signal is inversely proportional to the heat capacity renormalized by temperature — C_p / T. The obtained results demonstrate high sensitivity of the photoinduced SHG to the low temperature phase transformations.     

Band gap profiles of intrinsic amorphous silicon germanium films and their application to amorphous silicon germanium heterojunction solar cells

Intrinsic amorphous silicon germanium (i-a-SiGe:H) films with V, U and VU shape band gap profiles for amorphous silicon germanium (a-SiGe:H) heterojunction solar cells were fabricated. The band gap profiles of i-a-SiGe:H were prepared by varying the GeH₄ and H₂ flow rates during the deposition process. The use of i-a-SiGe:H with band gap profile in an absorber layer for a-SiGe:H heterojunction solar cells was investigated. The solar cell using a VU shape band gap profile shows a higher efficiency compared to other shapes. The highest efficiency obtained for an a-SiGe:H heterojunction solar cell using the VU shape band gap profile technique was 9.4% (V_oc = 0.79 V, J_sc = 19.0 mA/cm² and FF = 0.63).     

Thickness dependence of optical parameters for Ge–Se–Te thin films

The present work deals with thickness dependent study of the thin films of Ge₁₀Se_90 − xTe_x (x = 0, 10) chalcogenide glasses. Bulk samples of Ge₁₀Se₉₀ and Ge₁₀Se₈₀Te₁₀ have been prepared by melt quenching technique. Thin films (thickness d = 800 nm and 1100 nm) of the prepared samples have been deposited on glass substrate using vacuum evaporation technique. The optical parameters i.e. optical band gap (E_g^opt), absorption coefficient (α), refractive index (n) and extinction coefficient (k) are calculated from the transmission spectrum in the range 400–1500 nm. The optical band gap decreases with the increase of thickness from 1.87 ± 0.01 eV (d = 800 nm) to 1.80 ± 0.01 eV (d = 1100 nm) for Ge₁₀Se₉₀ and from 1.62 ± 0.01 eV (d = 800 nm) to 1.48 ± 0.01 eV (d = 1100 nm) for Ge₁₀Se₈₀Te₁₀ thin films.     

Preparation of calcium-doped boron nitride by pulsed laser deposition

Calcium-doped BN thin films Ca_xBN_y (x = 0.05–0.1, y = 0.7–0.9) were grown on α-Al₂O₃(0 0 1) substrates by pulsed laser deposition (PLD) using h-BN and Ca₃N₂ disks as the targets under nitrogen radical irradiation. Infrared ATR spectra demonstrated the formation of short range ordered structure of BN hexagonal sheets, while X-ray diffraction gave no peak indicating the absence of long-range order structure in the films. It was notable that Ca-doped film had 5.45–5.55 eV of optical band gap, while the band gap of Ca-free films was 5.80–5.85 eV. This change in the band gap is ascribed to interaction of Ca with the BN sheets; first principle calculations on h-BN structure indicated that variation of inter-plane distance between the BN layers did not affect the band gap. This study highlights that PLD could prepare BN having short-range structure of h-BN sheets and being doped with electropositive cation which varies the optical band gap of the films.     

Phase change and optical band gap behavior of Se0.8S0.2 chalcogenide glass films

Se_0.8S_0.2 chalcogenide glass films have been prepared by thermal vacuum evaporation technique with thickness 583 nm. Annealing process at T ≥ 333 K crystallizes the films and nanostructured films are formed. The crystallite size was increased to 24 nm as the annealing temperature increased to 373 K. Orthorhombic crystalline system was identified for the annealed films. SEM micrographs show that films consist of two parallel surfaces and the thickness was determined by cross section imaging. The optical transmittance is characterized by interference patterns as a result of these two parallel surfaces, besides their average value at longer wavelength decreases as a result of annealing process. The band gap, E_g is red shifted due to crystallization by annealing. As the phase of the films changes from amorphous to crystalline in the annealing temperature range 333–363 K, a non sharp change of the band gap (E_g) is observed. This change was explained by Brus’s model of the energy gap confinement behavior of the nanostructured films. The optical refractive index increases suddenly when the system starts to be crystallized by annealing.     

Growth and properties of sodium tetraborate decahydrate single crystals

Sodium tetraborate decahydrate (Na₂B₄O₇·10H₂O) single crystals were grown from aqueous solution by slow solvent evaporation method and its functional groups have been confirmed by FTIR. Grown crystals were found to be hard in nature (n = 1.8). From optical studies band gap of the material was found to be 4.1 eV and PL emission peak was found at 340 nm which can be due to annihilation self trapped excitons present in borate crystals. Dielectric constant was found to increase with temperature up to 70 °C. Conductivity obeys Jonscher's power law as seen at different temperatures. Activation energy of the crystal was found to be 2.05 eV.     

Spectroscopic ellipsometry and magneto-transport investigations of Mn-doped ZnO nanocrystalline films deposited by a non-vacuum sol–gel spin-coating method

Nanocrystalline Zn_1?xMn_xO films (x = 0, 0.05, 0.1, 0.15, and 0.2) were deposited onto corning glass substrates by a non-vacuum sol–gel spin coating method. All of the films were annealed at 450 °C for 2 h. The structural, optical and magneto-transport properties were investigated by X-ray diffraction, spectroscopic ellipsometry and a system for the measurement of the physical properties. X-ray diffraction analysis of the films reveals that the Mn-doped ZnO films crystallize in the form of a hexagonal wurtzite-type structure with a crystallite size decreases with an increase of the Mn concentration. It was also found that the microstrain increases with the increase of the Mn content. Evidence of nanocrystalline nature of the films was observed from the investigation of surface morphology using transmission, scanning electron microscopy and atomic force microscopy. The optical constants and film thicknesses of nanocrystalline Zn_1?xMn_xO films were obtained by fitting the spectroscopic ellipsometric data (ψ and Δ) using a three-layer model system in the wavelength range from 300 to 1200 nm. The refractive index was observed to increase with increasing Mn concentration. This increase in the refractive index with increasing Mn content may be attributed to the increase in the polarizability due to the large ionic radius of Mn²⁺ compared to the ionic radius of Zn²⁺. The optical band gap of the nanocrystalline Mn–ZnO films was determined by an analysis of the absorption coefficient. The direct transition of the series of films was observed to have energies increasing linearly from 3.17 eV (x = 0) to 3.55 eV (x = 0.2). Magnetoresistance (MR) was measured from 5 K to 300 K in a magnetic field of up to 6 T. Low-field positive MR and high-field negative MR were detected in Mn-doped ZnO at 5 K. Only negative MR was observed for temperatures above 200 K. The positive MR in Mn-doped ZnO films was observed to decrease drastically when the temperature increased from 5 K to 100 K. The isothermal MR of Zn_1?xMn_xO films with different Mn concentrations at 5 K reveals that the increase of the Mn content induces a giant positive MR above x = 0.05 and reaches up to 55% at an applied field of 30 kOe for x = 0.2.     

New anthracene-based semi-conducting polymer analogue of poly(phenylene sulfide): Synthesis and photophysical properties

A new anthracene-based polymer analogue of poly(phenylene sulfide) has been synthesized via Wittig polycondensation. The polymer is soluble and shows a good film quality. This organic material showed an amorphous behavior with a T_g of 70 °C. The absorption and fluorescence properties of the polymer were investigated. The HOMO/LUMO energy levels were estimated by cyclic voltammetry measurements. The PAnS thin film exhibits an optical gap of 2.56 eV and emits in orange region. The fluorescence quantum efficiency in dilute solution of PAnS was of 66%. A PAnS-based single-layer diode has been fabricated and shows relatively low turn-on voltage of 4.8 V.     

Preparation,magnetic and optical properties of layered oxychalcogenides SmCuOCh (Ch = S or Se)

This paper reports on the synthesis and the electrical, magnetic and optical properties of SmCuOS and SmCuOSe. The magnetic properties reveal that Sm is in its 3+ oxidation state (μ^theo = g√J(J + 1) = 0.85 μ_B; g = 2/7) with a large Van Vleck contribution, and exclude the possibility of a divalent oxidation state for samarium (Sm²⁺; ⁷F₀ state, g = J = 0, μ_eff = 0).Optical properties were studied by means of diffuse reflectance and photoluminescence spectra in the UV–vis range. The electrical measurements show that the two samarium copper oxychalcogenides, SmCuOSe and SmCuOS are semiconductors with optical band gap (E_g) values of 2.60 and 2.90 eV, respectively.     

Density functional theories study on the properties of Ga1 − xCrxAs

The structural, electronic, magnetic and optical properties of Ga_1 − xCr_xAs (x = 0, 6.25%, 12.5%) have been studied by first-principles calculations based on the HSE hybrid density functional theories. The optical properties, including the complex dielectric function, optical refractive index, extinction coefficient and absorption coefficient are discussed for radiation up to 15 eV. The results predicate that the system of Ga_1 − xCr_xAs exhibits typical half-metallic properties, in which Cr forms deep levels in the forbidden band and reduces the energy gap, increases static dielectric constant and obviously red-shifts the absorption edge. With the increase of the fraction of Cr, the material gradually exhibits noticeable anisotropy in the photon energy range of 0–5 eV. In addition, the p-d hybridization reduces the magnetic moment of Cr from its free space charge value of 3 μ_B and a smaller atomic magnetic moments of As and Ga atoms are generated.     

Laser stimulated piezoelectricity in Er3+ doped GeO2–Bi2O3 glasses containing silicon nanocrystals

We report the first observation of the laser stimulated piezoelectricity in Er³⁺ doped GeO₂–Bi₂O₃ glasses containing silicon nanocrystals, prepared using the simple well known melt quenching technique. Two split beams originated from the same nanosecond lasers were used for the performance of the bicolor laser treatment.The fundamental (λ = 1064 nm) and the doubled frequency (λ = 532 nm) signal of a pulsed nanosecond Nd:YAG laser, as the fundamental (λ = 1540 nm) and the doubled frequency (λ = 770 nm) signal of an Er:glass laser were used.The ratio of power densities between the fundamental and the doubled frequency beams has been varied from 4:1 to 8:1. This value was chosen to achieve the maximum output photoinduced piezoelectric response. The present photoinduced piezoelectricity effect opens a new road for obtaining optically operated piezoelectric devices in germanate composites doped with rare-earth ions.     

Preparation,crystal structure and characterization of α-NaSbP2S6 and β-NaSbP2S6 phases

The new phases α-NaSbP₂S₆ and β-NaSbP₂S₆ were synthesized by ceramic and reactive flux methods at 773 K. The structures of α-NaSbP₂S₆ and β-NaSbP₂S₆ were determined by the single-crystal X-ray diffraction technique. α-NaSbP₂S₆ crystallizes in the monoclinic space group P2₁/c with a = 11.231(2) Å, b = 7.2807(15) Å, c = 11.640(2) Å, β = 108.99(3)°, V = 900.0(3) Å³ and z = 4. β-NaSbP₂S₆ crystallizes in the monoclinic space group P2₁ with a = 6.6167(13) Å, b = 7.3993(15) Å, c = 9.895(2) Å, β = 92.12(3) °, V = 484.10(17) Å³ and z = 2.The α- and β-phases of NaSbP₂S₆ are closely related, the main difference lies in the stacking of the [Sb[P₂S₆]]_nⁿ⁻ layers. The structure of α-NaSbP₂S₆ consists of two condensed layers (MPS₃ type) to give an ABAB… sequence with Na⁺ cations located in the interlayer space. The packing of β-NaSbP₂S₆ is formed by monolayers of [Sb[P₂S₆]]_nⁿ⁻ stacked in an AA… fashion separated by a layer of Na⁺ cations. Both phases are derivates of the M¹⁺M³⁺P₂Q₆ family.The optical band gaps of α-NaSbP₂S₆ and β-NaSbP₂S₆ were determined by UV–vis diffuse reflectance measurements to be 2.17 and 2.25 eV, respectively.     

Structural and optical properties of BaTi2O5 thin films prepared by pulsed laser deposition at different substrate temperatures

BaTi₂O₅ thin films were prepared on MgO (1 0 0) substrates by pulsed laser deposition. The effect of substrate temperature (T_sub) on the structural and optical properties of the films, such as crystal phase, preferred orientation, crystallinity, surface morphology, optical transmittance and bandgap energy, was investigated. The preferred orientation of the films changed form (7 1 0) to (0 2 0) depending on T_sub, and the b-axis oriented BaTi₂O₅ thin film could be obtained at T_sub = 973–1023 K. The surface morphology of the films was different with changing T_sub, which showed a dense surface with an elongated granular texture at T_sub = 973–1023 K. The crystallinity and surface roughness increased at the elevated substrate temperatures. The as-deposited BaTi₂O₅ thin films were highly transparent with an optical transmittance of ～70%. The bandgap energy was found to decrease with increasing substrate temperature, from 3.76 eV for T_sub = 923 K to 3.56 eV for T_sub = 1023 K.     

First principle calculation of physical properties of barium based chalcogenides BaM4S7 (M = Ga,Al); a DFT,DFT-D and hybrid functional HSE06 study

The electronic structure, elastic and optical properties have been calculated for the novel nonlinear optical (NLO) crystals BaQ₄S₇ (Q = Ga, Al) using plane wave pseudo-potential density functional theory (DFT) method as implemented in CASTEP and ABINIT codes. In this study we used both hybrid HSE06 and DFT-D functionals with GGA approximation. These NLO compounds, which belong to the mm2 point group, are particularly interesting because of their transparency in the mid-infrared region and wide energy band gap. We present results for electronic structure, elastic tensor coefficients, refractive indices and second order nonlinear optical susceptibilities. The calculated energy band gap and frequency dependent refractive indices as well as the NLO coefficients of BaGa₄S₇ are in good agreement with the experimental values. With no reported theoretical or experimental energy band gap and optical properties of BaAl₄S₇, we present for the first time its electronic structure and above mentioned optical coefficients. This compound has higher direct band gap with 3.74 eV, better optical birefringence and second-order NLO coefficients than most NLO compounds. The second-order NLO coefficients for BaAl₄S₇ have been calculated as d₃₁ = 3.15 pm/V, d₃₁ = 2.20 pm/V, d₃₃ = −6.31 pm/V.     

Optical constants and crystal chemical parameters of Sc2W3O12

The refractive indices of Sc₂W₃O₁₂, measured at wavelengths of 435.8–643.8 nm, were used to calculate n_a = 1.7331, n_b = 1.7510, n_c = 1.7586 at λ = 589.3 nm and n_∞ values at λ = ∞ from a one-term Sellmeier equation. Mean refractive indices, 〈n_D〉, and mean dispersion values, 〈A〉, are, respectively, 1.7475 and 110 × 10^?16 m². Total electronic polarizabilities, α_obs, were calculated from n_∞ and the Lorenz–Lorentz equation. The unusually large difference between the observed polarizability of 28.415 Å³ and the calculated total polarizability α_T of 26.74 Å³ (Δ = +6.3%) is attributed to (1) a large M–O–W angle, and (2) a high degree of W 5d–O 2p and Sc nd–O 2p hybridization, where n signifies unspecified Sc d orbitals.     

Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH₄/CH₄/H₂ and the influence of H₂ gas flow rate (F(H₂)) on the film properties was investigated. The SiH₄ gas flow rate was 1 sccm. At the CH₄ gas flow rate (F(CH₄)) of 1 sccm, nanocrystalline cubic SiC (nc-3C-SiC) grew even without H₂. On the other hand, at F(CH₄) = 2 sccm, amorphous SiC grew without H₂ and nc-3C-SiC grew above F(H₂) = 50 sccm. As F(H₂) was increased, the crystallinity improved both at F(CH₄) = 1 and 2 sccm. However, the mean crystallite size decreased at F(CH₄) = 1 sccm and increased at F(CH₄) = 2 sccm. We discuss growth mechanisms of nc-3C-SiC.     

Comparative study of tetragonal Cu2In7Se11.5 and trigonal CuIn5Se8 by spectroscopic ellipsometry

A comparative study of chalcopyrite-related Cu₂In₇Se_11.5 and CuIn₅Se₈ crystals by spectroscopic ellipsometry is presented. Their complex dielectric function ?(ω) = ?₁(ω) + i?₂(ω) has been determined in the 0.8–4.7 eV photon energy range. The spectral dependence of ?₁(ω) and ?₂(ω) as well as the complex refractive index, the absorption coefficient and the normal-incidence reflectivity for tetragonal Cu₂In₇Se_11.5 and trigonal CuIn₅Se₈ crystals have been modelled using the Adachi's model for interband transitions. The results are in a good agreement with the experimental data over the entire range of photon energies. The model parameters, including the energies corresponding to the lowest direct gap (E₀) and higher critical points (E_1A, E_1B), have been determined using the simulated annealing algorithm. The results show that the tetragonal CuIn₃Se₅, the tetragonal Cu₂In₇Se_11.5 and the trigonal CuIn₅Se₈ crystals belong to different phases of the Cu₄In_2nSe_2+3n system, n = 6, n = 7 and n = 10, respectively.