2010年度工作会议

<正>2010年1月16日—17日,公司召开了2010年度工作会议。会议认真回顾总结了2009年的主要工作,分析了当前的形势和机遇,部署了2010年的工作任务。会上,公司董事长蒋明作了重要讲话,总经理毛绍融作了行政工作报告,党委副书记陈百河作了党委工作报告,副总     

低阶煤热解提质技术发展现状及趋势研究

本文围绕褐煤资源综合开发利用的问题进行了探讨;对褐煤煤质的特殊性进行了分析;对国内外褐煤提质加工技术进行了分类,简要说明了各类工艺的工作原理和技术特点;重点分析了国内外褐煤干燥热解技术的研究进展和工业应用情况,对工业化示范装置出现的问题进行了评价和总结;分析了制约褐煤发展的主要因素,并指出了未来产业发展的方向和重点.     

高庄煤矿供热系统的改造

高庄煤矿针对原锅炉供热系统存在的问题进行了改造,拆除原锅炉,采用邻矿电厂的富余蒸气作热源,安装热交换器组。改造后保证了供热质量,节约了能源、资源,提高了矿区环境质量,降低了运行维护费用,节省了人力资源,减少了占地面积,节约了各项检查检测费用。     

黑岱沟选煤厂集中控制系统的升级改造

介绍了选煤厂集中控制系统的结构及功能,分析了黑岱沟选煤厂改造前的状况,阐述了升级改造方案;集控系统升级改造后,全厂实现了智能联动,节约了劳动力,提高了生产效率。     

整流机组节能技术改造总结

介绍了整流机组的技术改造内容。通过改造,提高了装备技术水平,简化了操作,提高了供电的平稳性和安全性;降低了电力损耗;节约了能源。     

哈尔乌素选煤厂采用TDS智能干选机的改造及安全生产措施

介绍了TDS智能干选机在哈尔乌素选煤厂的应用现状及现场改造实践,从技术和管理方面提出了安全生产措施,改造后增强了选煤厂系统灵活性和市场适应性,降低了生产费用,稳定了煤质,保证了安全生产,提高了盈利能力,同时确保了生产工人辐射剂量小于一般公众限值,防爆和除尘满足规范和规程要求及煤矿安全生产要求。     

带式过滤机在多品种氢氧化铝生产中的应用

介绍了带式真空过滤机的工作原理及其在多品种氢氧化铝生产方面的应用情况,并对带式真空过滤机使用过程中存在的问题进行了改造。改造之后,提高了洗涤过滤效率,降低了滤饼水分,降低了能耗,提高了产量,确保了产品质量,取得了较好的经济效益。     

石墨电极数控机床常见故障分析

近年来,各炭素企业为了扩大再生产和替换陈旧设备,相继加快了石墨电极机床数字化改造步伐,不仅降低了操作者的劳动强度,提高了生产效率,而且减少了人为误差,提高了控制精度,保证了加工质量.     

庄信万丰发布《铂金2009年年鉴》

据庄信万丰公司最近出版的《PLATINUM 2009》报道,2008年,全球铂金市场出现了11.7t的短缺,铂金的供应量下降了9.5%,达到了185.7t。汽车尾气净化催化剂行业对铂金的需求下降了8.2%,达到了118.3t。除去回收料,全球首饰行业对铂金原材料的需求下降了6.2%,达到了42.5t。     

助磨剂对普通硅酸盐水泥性能的影响及作用机理

研究了助磨剂对普通硅酸盐水泥的流动性、颗粒分散度及其砂浆性能的影响并对作用机理进行了探讨。结果表明 ,助磨剂加强了水泥的流动性、提高了水泥细度、增加了细粉量、对勃氏比表面积无明显改变、增加了水泥3d、2 8d强度 ;助磨剂的作用机理是减小了粉碎阻力、防止团聚和糊磨、提高流动性而加强了料和球的作用频率和效率 ,从而提高了粉磨效率。     

RF performances of inductors integrated on localized p+-type porous silicon regions

To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented. A first comparison is done between the performances of inductors integrated on same-thickness localized and full porous silicon sheet layers. The effect of the silicon regions in the decrease of performances of localized porous silicon is discussed. Then, the study shows that the localized porous silicon substrate significantly reduces losses in comparison with high-resistivity silicon or highly doped silicon bulks. These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate.     

磷矿伴生硅资源制备单质硅的探讨

综述了国内外以四氟化硅、氟硅酸钠（钾）、无定SiO2为硅源制备单质硅的主要方法,并对以无定SiO2为硅源制备单质硅的工艺条件进行了研究与探索。     

Relaxation of residual microstress in reaction bonded silicon carbide

High temperature annealing reduces the residual microstress in the silicon phase and silicon carbide phase in monolithic reaction bonded silicon carbide and in the matrix of melt-infitrated composites of silicon carbide reinforced with silicon carbide fibers. Stress relaxation is related to creep of the silicon carbide with power-law creep exponents similar to tensile creep in reaction bonded silicon carbide.     

碳化硅材料中游离硅及游离碳对性能的影响

研究了全碳粉反应渗硅碳化硅（PCRBSC）材料的结构与力学性能的关系。分析了渗硅碳化硅材料中游离硅（fsi),游离碳（fc)含量对抗折强度的影响。结果表明：参硅碳化硅材料中随游离硅（fsi)含量的增加,其抗折强度下降,并且二者呈直线关系,符合线性复合规划,另一方面,游离碳（fc)含量较高的渗硅碳化硅材料,尽管游离硅（fsi)含量低,但其抗折强度低于等量或较多游离硅（fsi)含量的渗硅碳化硅材料的抗折强度。     

氮化物结合碳化硅耐火材料的研究现状

分别概述了以氮化硅、赛隆和氧氮化硅作为结合相 的SiC材料的结构特点、理化性能、生产工艺和应用情况,详细 介绍了国内这3种材料的研究现状,并对今后氮化物结合SiC 材料的研究内容提出了自己的观点。     

多晶硅生产中硅芯氧化问题探究

改良西门子法生产多晶硅中硅芯是多晶硅生长的载体,硅芯氧化会降低多晶硅产品品质,硅芯氧化的产品对下游铸锭、直拉均有不同程度的影响。目前硅芯氧化是影响多晶硅产品质量的一大问题。分析了硅芯氧化机理,针对相关因素开展了试验,提出了降低硅芯氧化率的措施。     

On the Growth and Microstructure of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

Carbon nanotubes (CNTs) were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110–130 μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.     

Effect of Continuous-Wave High-Intensity Laser Radiation on the Strength of Silicon Nitride and Silicon Carbide

Laser interaction with silicon nitride and silicon carbide ceramics shows that hot-pressed silicon nitride was less affected than reaction-bonded silicon nitride at the same energy levels. Both of these showed greater thermal-shock resistance than hot-pressed silicon carbide.     

Recovery of silicon powder from kerf loss slurry by centrifugation

A feasibility study on recovering silicon powder from slurry containing silicon carbide abrasives, silicon kerfs, and iron fragments generated by slicing silicon ingots in the wire-saw process was conducted. The glycol solution and iron fragments in the slurry were removed using acetone and nitric acid, respectively. Then, centrifugation was applied to separate the silicon kerfs and silicon carbide abrasives using a heavy-liquid with a density between that of silicon and silicon carbide. The effects of several operational variables on the purity and yield of silicon kerfs were systematically investigated, including solid volume fraction, heavy-liquid density, number of centrifugation steps, and centrifugation time. Additionally, the effects of agitation for dispersing particles in the heavy-liquid before centrifugation were also studied. The purity and yield of Si product at specified conditions are reported.     

渗硅碳化硅材料结构与性能关系的研究

采用低廉石油焦碳分为原料制造全碳粉生坯，通过有机添加剂来调配生坯中碳的比例，以控制烧结体中游离硅（fsi）、游离碳（fC）含量（其中fs,fc为烧结中未反应的硅和碳），研究了全碳粉反应硅碳化硅（PCRSC）材料的结构与力学性能的关系，分析了渗硅碳化硅材料中游离硅、游了碳含量对抗弯强度的影响。结果表明：渗硅碳化硅材料中随游离硅含量的增加，其抗弯速度下降，并且二者呈直线关系，符合线性复合规则，另一方面，游离碳含量较高的渗硅碳化硅材料，尽管游离硅含量低，但其抗弯强度低于等量或较多游了硅含量的渗硅碳化硅材料的抗弯强度。