Ag/TiO_2纳米纤维薄膜与光催化性能研究

采用新型种子诱导方法合成Ag/TiO2纳米纤维异质结构,通过在TiO2纳米纤维,水,乙醇溶液中加入银氨溶液实验方法制备了Ag/TiO2纳米纤维薄膜。用场发射电子显微镜(FESEM),能量色散X射线光谱(EDX),透射电子显微镜(TEM),X射线粉晶衍射(XRD),X射线光电子能谱(XPS)来表征最终产物。结果表明这些TiO2纳米纤维的直径大约80 nm,长度在几百微米之间,而负载在其上面的Ag粒子大小可达300~700 nm。将上述制取的光催化薄膜进行过滤甲胺磷水溶液实验,甲胺磷溶液降解可达87.0%,表明了TiO2纳米薄膜的光催化活性得到了很大提高。该材料将有可能应用于光催化、消毒、杀菌、环境(水、空气)污染处理等方面。     

硫酸钴浓度对电沉积Co-W-P薄膜结构与磁性能的影响

在20#钢基体上电沉积Co-W-P薄膜,并研究镀液中硫酸钴浓度对Co-W-P薄膜的结合强度、结构、成分、厚度和磁性能的影响。结果表明：Co-W-P薄膜与20#钢基体结合紧密,随着硫酸钴浓度从5 g/L增至25 g/L,Co-W-P薄膜的结构和物相无明显变化,但平均晶粒尺寸呈现先减小后增大的趋势,Co元素的质量分数呈现先升高后降低的趋势,导致不同Co-W-P薄膜的致密性和磁性能存在差异。当硫酸钴浓度为15 g/L时,Co-W-P薄膜的平均晶粒尺寸仅为40.6 nm,Co元素的质量分数达到64.19%,具有最大的矫顽力（932 A/m）和饱和磁化强度（100.7 A·m2·kg-1）,其结构致密并且展现出良好的磁性能。在一定范围内硫酸钴浓度的增加,降低了成核过电位,使晶粒细化且结合紧密,同时提高了钴还原沉积效率,使Co元素的质量分数升高。研究表明：晶粒细化、致密性改善以及磁性元素的协同作用进一步提高了Co-W-P薄膜的磁性能。     

退火温度对纳米Co0.8Mg0.2Fe2O4/SiO2复合薄膜结构和磁性的影响

采用溶胶-凝胶旋涂法制备纳米Co0.8Mg0.2Fe2O4/SiO2复合薄膜.用X射线衍射仪、原子力显微镜及振动样品磁强计分析复合薄膜的结构、表面形貌和磁性,研究退火温度对复合薄膜结构和磁性的影响.结果表明:经800℃退火处理的样品中已形成Co0.8Mg0.2Fe2O4晶相;随着退火温度的提高,Co0.8Mg0.2Fe...     

贵金属Ag沉积ZnO薄膜的光催化性能研究

采用真空蒸发镀膜的方法在预先制备好的厚度为200nm的氧化锌薄膜表面沉积了贵金属Ag,并对其光吸收和光催化性能进行了研究。结果表明,沉积Ag厚度为5nm的薄膜比纯氧化锌薄膜的光催化效率提高了约20%,同时也比沉积Ag厚度为2nm的薄膜光催化效果好,且在太阳光照射下的光催化效率比在紫外光照射下高出9%。     

用于微电机系统的Co-Pt-P磁性薄膜的制备

使用电沉积方法制备了用于微电机系统的Co-Pt-P磁性薄膜。研究了次磷酸钠的浓度对薄膜的沉积速率、厚度、成分、表面形貌及磁性能的影响。结果表明:提高次磷酸钠的浓度,有利于加快沉积速率,提高薄膜中钴和磷的质量分数。Co-Pt-P磁性薄膜是一种典型的瘤状颗粒膜。磷的析出有利于细化薄膜表面颗粒,限制畴壁位移,从而大大提高薄膜的矫顽力。然而,高浓度的次磷酸钠会破坏镀液的稳定性,使薄膜的磁性能下降。     

电沉积Co-Pt-W磁性薄膜及其性能的研究

使用电沉积技术制备了磁性能较好的Co-Pt-W薄膜,并研究了pH值对薄膜的成分、结构、表面形貌和磁性能的影响。研究发现:Co-Pt-W薄膜是一种具有fct四方结构的晶态颗粒膜。随着pH值的升高,Co-Pt-W薄膜中Co和W的质量分数下降,而Pt的质量分数增大。pH值过低,析氢作用明显,Co-Pt-W薄膜表面颗粒较大,并且孔隙率高。增大pH值,有利于细化Co-Pt-W薄膜表面颗粒并降低孔隙率,从而提高矫顽力。     

Bi5FeTi3O15薄膜室温多铁性及其磁性机理

用溶胶凝胶工艺在Pt/Ti/SiO2/Si基片上沉积了Bi5FeTi3O15(BFTO)薄膜,研究了前驱液浓度和退火升温速率对BFTO薄膜结晶的影响,前驱液浓度低于0.05mol/L时不利于4层层状钙钛矿结构的形成。沉积BFTO薄膜的最佳制备工艺为:前驱液浓度为0.05mol/L和氧气氛中退火速率为4℃/s。室温下,用最佳工艺制得的BFTO薄膜显示出良好的铁电性,在300 kV/cm的外加电场下,样品的剩余极化强度2Pr达到43.4μC/cm2;同时,BFTO薄膜也显示出弱铁磁性。为了研究其磁性来源,分别在氧气氛和氮气氛下对BFTO薄膜样品进行退火,分析其磁性的差异。认为BFTO薄膜室温下的弱铁磁性主要来源于F中心交换作用。     

钼酸钠对电沉积Co-Pt-Mo磁性薄膜性能的影响

在纯铜表面制备了Co-Pt-Mo磁性薄膜,并研究了钼酸钠的质量浓度对Co-Pt-Mo磁性薄膜性能的影响。结果表明:随着钼酸钠的质量浓度的增加,Co-Pt-Mo磁性薄膜的厚度和电流效率显著提高,钴和钼的质量分数逐渐增大,使得比饱和磁化强度增大。然而,当钼酸钠的质量浓度为10 g/L时,由于剧烈的析氢和金属氢氧化物胶体的阻碍作用,使得电流效率下降,Co-Pt-Mo磁性薄膜表面的颗粒发生团聚现象,孔隙率增大,矫顽力降低。当钼酸钠的质量浓度为8 g/L时, Co-Pt-Mo磁性薄膜具有致密的结构和最大的矫顽力。     

组织结构对Co-Ni-P薄膜形貌和磁性的影响

化学镀 Co- Ni- P薄膜镀态下为非晶态结构 ,表面较为平整 ;经 30 0℃× 1 h热处理 ,发生了晶化转变 ,表面由“圆锥峰“所构成 ;随加热温度的提高 ,镀层析出了 Co2 P相 ,并发生了由密排六方结构的α- Co向面心立方结构的β- Co的同素异构转变。非晶态 Co- Ni- P薄膜的矫顽力较低 ,矩形比较高 ;薄膜向晶态转变时 ,矫顽力和矩形比皆呈上升趋势 ;50 0℃× 1 h热处理 ,薄膜由α- Co和 Co2 P相构成时 ,且在晶界上偏聚较多磷的影响下 ,矫顽力和矩形比的值达到最高 ;温度继续升高 ,晶粒长大 ,第二相粗化时 ,薄膜的矫顽力和矩形比都减小。化学镀 Co- Ni- P薄膜具有优秀的高密度垂直记录特性。     

平行磁场作用下电沉积Co-Ni-Mn-P磁性薄膜

在平行磁场作用下电沉积Co-Ni-Mn-P磁性薄膜。研究了平行磁场对电沉积过程及薄膜性能的影响。研究发现:施加平行磁场,有利于提高离子的传质速率,从而提高沉积效率。平行磁场作用下电沉积制备的Co-Ni-Mn-P磁性薄膜呈现出"枝晶状"结构,矫顽力和比饱和磁化强度更高。     

铁电薄膜的材料系统与功能性质

集成铁电体把铁电材料与集成半导体技术联合起来,以发展出一批新的电子器件.铁电薄膜在其中发挥着非挥发性记忆、热释电、压电、光折变、抗辐射、声学的和/或介电的功能性质.在不同的器件应用中,铁电薄膜的材料体系是不相同的.在非挥发性存贮器(NVRAM)中,PZT薄膜面临着SrBi2Ta2O9(SBT)系列铁电体的强力挑战;Ba1-xSrxTiO3(BST)则可能出现在下一代高密度动态随机存贮器(DRAM)中.金属氧化物电极和/或过渡层可以克服Pt电极面临的一些问题,并有助于铁电薄膜的外延生长.     

Microstructure and Magnetic Properties of (Co-Fe)-Al-O Thin Films

(Co-Fe)-Al-O soft magnetic thin films were fabricated by cosputtering Co-Fe alloy and Al₂O₃ ceramic targets using an inductively coupled RF (radio frequency) sputtering system. The microstructure and magnetic properties of various (Co-Fe)/(Al-O) thin-film compositions were systematically characterized. A specimen with the composition (Co₇₂Fe₁₇Al₁₁)-O exhibited excellent high-frequency magnetic properties, with a value >300 for the real part of the permeability and >2 GHz for the self-resonant frequency. High-resolution transmission electron images revealed nanometer-order Al₂O₃ amorphous phases separating the Co-Fe alloy nanograins. The excellent high-frequency magnetic properties were derived from the particular microstructure of these thin films.     

TiO2薄膜材料的制备及其性能的研究进展

TiO2是一种宽带隙半导体材料,具有广阔的应用前景。综述了TiO2薄膜材料的制备方法及其气敏、光电、光催化性能,并对TiO2薄膜材料的发展趋势进行了展望。     

Optical and Mechanical Properties of Thin PTFE Films,Deposited from a Gas Phase

Thin polytetrafluoroethylene (PTFE) films are produced by deposition from a gas phase by two methods: electron-enhanced vacuum deposition (EVD) and EVD + low-temperature plasma (LTP). Structure, morphology, and composition of the films are studied by IR spectroscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. They are close to the structure of bulk PTFE. The roughness of the films’ surface is changed with gas pressure and LTP power variations. Films are transparent from UV to near-infrared regions. Refractive and extinction indices and their anisotropy are measured by spectral ellipsometry. They are tuned by variations of deposition conditions. Hardness and Young modulus of the films are increased if EVD + low power LTP is used for film deposition. Use of EVD + LTP also increases thermal stability of the films. Contact angle of the films corresponds to the bulk PTFE. The PTFE molecules oriented are preferentially in perpendicular direction to the substrate surface.     

Microstructure and optical properties of Ag/ITO/Ag multilayer films

Transflective and highly conductive Ag/ITO/Ag multilayer films were prepared by magnetron sputtering on glass substrates. The microstructure and optical properties of Ag/ITO/Ag multilayer films were systematically investigated by X-ray diffraction, scanning electron microscopy, and ultraviolet-visible spectroscopy. The optical properties of the multilayer films were significantly influenced by the thickness of the Ag surface layer from 3.0 to 12.6 nm. The multilayer film of Ag9.3nm/ITO142nm/Ag9.3nm shows the best comprehensive property. It could satisfy the requirement for transflective LCD.     

热处理过程对Ag2O-SiO2复合薄膜光学性能的影响

利用溶胶-凝胶法在浮法玻璃上制备了Ag2O-SiO2复合薄膜,通过改变热处理温度和时间得到不同条件下的试样。利用GD751型紫外-可见分光光度计和RF-5301PC型荧光光度计研究了试样的光吸收性能和光致发光性能,并对其发光机理进行初步探讨。在nAg/nSi=0.03的浓度下,探讨热处理温度与时间对Ag2O-SiO2复合薄膜光学性能的影响。在本实验中,当热处理温度为500℃时,复合薄膜的光学性能相对较好。银颗粒的尺寸和化学状态对Ag2O-SiO2复合薄膜的发光性能影响非常大。     

(Zr,Sn)TiO_4薄膜的制备及电性能研究进展

从对薄膜材料不断增长的性能要求出发,介绍了(Zr, Sn)TiO_4薄膜的晶体结构特征,主要阐述了其已有的制备工艺及电性能的研究进展.提出(Zr, Sn)TiO_4薄膜的制备方法将得到拓展和改进,指出了其今后的研究方向.     

Preparation and Properties of Woodceramic Thin Films

Woodceramic thin films were prepared onto alumina sheet and glass slide substrates by conventional radio frequency sputtering in an argon plasma. A woodceramic disk, 100 mm in diameter, sintered at 850°C was used as a target. The deposition rate was about 90 nm/h for 200 W input power. Remarkable differences were observed in the characteristics of films depending on the substrate temperature. Films prepared below 100°C had insulating properties, > 106 cm, and had transmission in the visible region ( > 600 nm), and had smooth surfaces. Increasing the substrate temperature causes sharp a decrease in the film resistivity and the growth of grain was 3–5 m. The film prepared at 300°C had semiconductor characteristics with an energy gap of about 0.05 eV.