对入射角不敏感的新型λ/4消色差相位延迟器

通过合理选择光学材料和器件全内反射角 ,对菲涅尔菱体型相位延迟器进行了改进 ,器件内两个全反射角不再相同 ,由内反射角引起的相位延迟的变化可以互相补偿 ,从而设计了一种对入射角不敏感的相位延迟器。它是单元结构 λ/ 4延迟器。计算表明 ,入射角变化± 2°时 ,相位延迟偏差仅为 0 .2 5°,是常规菲涅尔菱体的七分之一 ,延迟量的稳定性比镀镆菲涅尔菱体好。     

90°转向复合延迟器件的研制

为实现延迟器件出射光束的90°转向功能,提出了一种新的设计,利用一等腰直角菱体延迟器和一平板延迟器的组合,使光束在菱体延迟器上发生全反射而转向90°,同时使器件具有延迟功能。测试表明,实际制作的器件的误差完全在允许范围内,说明这一设计是合理的。     

一种对入射角不敏感的λ/4消色差相位延迟器

通过合理选择光学材料和器件结构角,设计了一种对入射角不敏感的菲涅耳菱体型消色差相位延迟器.它是单元结构λ/4延迟器.计算表明:入射角变化±2.5°时,引起的相位延迟量的偏差约为0.3°,是常规菲涅耳菱体相位延迟器在同等情况下延迟量变化的1/6.     

十字差动式小视场超高精度太阳敏感器

设计了一种专门用于对日观测成 像稳像系统的超高精度太阳敏感器。针对传统的四象限 太阳敏感器的不足,设计了一种基于十字差动式太阳硅光电池片 的探测器,以提高灵敏度和抗干扰能力。该系统在有效视场 (1°)内具有10''的低误差。     

一种基于0.13 μm SiGe BiCMOS工艺的Ka波段宽带有源移相器

采用0.13 μm SiGe BiCMOS工艺,设计了一种工作在32~38 GHz的Ka波段有源移相器,采用矢量合成的方法实现移相功能。该移相器电路包括输入无源巴伦、多相滤波网络、矢量合成单元、射随器和输出有源巴伦。后仿结果表明,输入输出反射系数均小于-9.5 dB,反向隔离度小于-80 dB,插入损耗优于-6.5 dB。在-55 ℃~125 ℃宽温范围内相对相移最大误差小于2.2°,全频带RMS移相误差小于1.5°,RMS增益误差小于0.35 dB。总功耗为18.2 mW,芯片核心面积为0.21 mm²。     

基于光纤检测技术的扭转敏感微机电系统加速度传感器

为实现微型化、抗电磁干扰、可长时间工作和可远距离传输的加速度传感器,提出了一种基于微机电系统(MEMS)非对称扭镜结构的光纤加速度计设计方案,并利用对角度变化非常敏感的双光纤准直器对扭镜的扭转角度变化进行检测。MEMS光纤加速度计由MEMS非对称扭镜结构、驱动电极和双光纤准直器等组成。分析了器件的加速度敏感原理和光纤检测原理,介绍了器件综合设计考虑,并给出了器件的结构参数。利用MEMS加工技术成功制作了MEMS光纤加速度计样品。对加速度计进行了实验测试,加速度计的输出实验值与理论值吻合。测试结果表明,该加速度计量程为±2g,带宽为600 Hz,分辨率优于10-4 g,且具有良好的线性度和重复性。该MEMS光纤加速度计将MEMS敏感结构与光纤检测相结合,兼备了两者的优点,结构紧凑、制作工艺简单。     

一种高线性度相位插值器

设计并实现了一种高线性度相位插值器。分析了相位插值器的工作原理和传统相位插值器结构,以此为基础,提出了一种具有高线性度的相位插值器电路。该电路采用TSMC 90 nm CMOS工艺进行设计,后仿真结果表明本设计的相位插值器具有良好的线性度,整个电路版图面积为(155×368) μm²,核心电路面积为(63×114) μm²。在1.2 V的电源电压下,相位差值器模块电路的功耗为3.12 mW。     

大功率670nm半导体激光器的研制

采用低压金属有机化学气相沉积生长了670nm激光器外延片，有源区采用单量子阱结构，阱区、垒区分别为InGaAsP和AlGaInP. 利用该外延片制作了带无电流注入区的氧化物条形激光器. 激光器腔长为900μm，电流注入区条宽为100μm，两端的无注入区宽度均为25μm. 镀膜后器件的阈值电流为0.4A，输出波长670±2nm，最大输出功率为1100mW, 水平、垂直发散角分别为8°, 40°. 表明该种结构可以提高器件的腔面光灾变功率.     

应用于VCSEL的宽角度光束控制非周期性高对比度光栅阵列

设计了特定周期和占空比的非周期性高对比度光栅来实现光束的波前相位控制,进而实现对光束的多角度控制.在研究中,采用有限时域差分法模拟了特殊排列的非周期高对比度光栅,并获得了-10.644°,-21.176°,-28.307°,10.644°,21.447°和28.418°的光束控制角度.基于这种多角度控制的高对比度光栅阵列,提出了一种具有多角度光束控制的VCSEL光源,这种尺寸极小的宽角发射VCSEL光源系统能使激光雷达系统的结构紧凑化和微型化.     

红外复合宽带波片的研制

波片延迟片是光学系统中常用的一种重要光学器件。通常所指的λ/2和λ/4波片是对某特定波长而言的 ,当光波波长偏离该特定波长时 ,其位相延迟量也将随之发生变化。在光谱整形、激光调谐和光通讯等领域中经常使用宽带波片 ,它在一定带宽内的延迟量是相同的。国内大多数的厂商一般只能生产单波段波片 (带宽仅± 4 0nm) ,本文用计算机仿真设计了红外宽带高精度复合波片 ,采用石英晶体材料加工出来的复合波片性能与设计指标符合得较好。波片适用范围为 12 0 0～ 16 5 0nm ,中心波长为 1390nm ,λ/2 波片的位相延迟量范围为 180 .0°± 3.6°,λ/4波片的位相延迟量范围为 90 .0°± 3.6°,即相位延迟误差λ/10 0。     

CMOS temperature sensor with ring oscillator for mobile DRAM self-refresh control

This paper presents novel low-cost CMOS temperature sensor for controlling the self-refresh period of a mobile DRAM. In the proposed temperature sensor, the temperature dependency of poly resistance is used to generate a temperature-dependent bias current, and a ring oscillator driven by this bias current is employed to obtain the digital code pertaining to on-chip temperature. This method is highly area-efficient, simple and easy for IC implementation as compared to traditional temperature sensors based on bandgap reference. The proposed CMOS temperature sensor was fabricated with an 80 nm 3-metal DRAM process, which occupies extremely small silicon area of only about 0.016 mm² with under 1 μW power consumption for providing 0.7 °C effective resolution at 1 sample/s processing rate. This result indicates that as much as 73% area reduction was obtained with improved resolution as compared to the conventional temperature sensor in mobile DRAM.     

On-chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

Electrically integrable, high-sensitivity, and high-reliability magnetic sensors are not yet realized at high temperatures (500 °C). In this study, an integrated on-chip single-crystal diamond (SCD) micro-electromechanical system (MEMS) magnetic transducer is demonstrated by coupling SCD with a large magnetostrictive FeGa film. The FeGa film is multifunctionalized to actuate the resonator, self-sense the external magnetic field, and electrically readout the resonance signal. The on-chip SCD MEMS transducer shows a high sensitivity of 3.2 Hz mT⁻¹ from room temperature to 500 °C and a low noise level of 9.45 nT Hz^−1/2 up to 300 °C. The minimum fluctuation of the resonance frequency is 1.9 × 10⁻⁶ at room temperature and 2.3 × 10⁻⁶ at 300 °C. An SCD MEMS resonator array with parallel electric readout is subsequently achieved, thus providing a basis for the development of magnetic image sensors. The present study facilitates the development of highly integrated on-chip MEMS resonator transducers with high performance and high thermal stability.     

Integrated multisensor chip

A multipurpose integrated-sensor chip has been fabricated for the simultaneous measurement of physical and chemical variables. The multipurpose chip which measures 8 × 9 mm²contains conventional MOS devices for signal conditioning, array accessing, and output buffering along with the following on-chip sensors: a gas-flow sensor, an infrared-sensing array, a chemical-reaction sensor, cantilever-beam accelerometers, surface-acoustic-wave (SAW) vapor sensors, a tactile sensor array, and an infrared charge-coupled device imager. The multisensing functions of this chip utilize both the pyroelectdc and piezoelectric effects in ZnO thin films. Fabrication of the chip is carried out using a conventional 3-µm Si NMOS process combined with Si micromachining techniques. Compatible fabrication technology and sensor properties are described.     

Bifacial silicon solar cells with 21·3% front efficiency and 19·8% rear efficiency

We introduced a triode structure with p–n junctions on both sides into single‐crystalline bifacial silicon solar cells in order to improve solar cell performance. These fabricated bifacial silicon solar cells have an energy conversion efficiency of 21·3% under front 1 sun illumination (the standard 1 kW/m² AM 1·5 global spectrum at 25°C) and 19·8% under rear 1 sun illumination tested at the Japan Quality Assurance Organization. The total of the front and rear conversion efficiencies is the highest ever reported for bifacial silicon solar cells. Copyright © 2000 John Wiley & Sons, Ltd.     

新型声表面波湿度传感器的研究

乐甫(Love)波其质点振动方向垂直于传播方向,同时又平行于基片表面,在基片法线方向上无振动分量。因此当基于Love波的电子器件在接触液体时Love波能量损耗很少,因而乐甫波声表面波(SAW)传感器主要用于液相检测。在石英上表面及在其上面淀积的SiO2薄膜中激发、传播的乐甫波对SiO2薄膜质量的变化很敏感,因此该文研究了基于乐甫波的湿度传感器感知气体环境的湿度含量。该文乐甫波湿度传感器采用42.75°Y-旋转切割石英基片,传播方向为[0°,132.75°,90°]。吸湿膜采用APCVD制作的多孔SiO2薄膜,此类膜比PECVD制作的SiO2膜疏松,吸湿、脱湿迅速。传感器灵敏度为62kHz/%RH,最大湿滞约3%,测得的湿敏特性、迟滞特性表明,Love波SAW湿度传感器线性度较好,实验验证了该结构具有很好的气体测试前景。     

Analog VLSI Circuit Implementation of an Adaptive Neuromorphic Olfaction Chip

In this paper, we present the analog circuit design and implementation of the components of an adaptive neuromorphic olfaction chip. A chemical sensor array employing carbon black composite sensing materials with integrated signal processing circuitry forms the front end of the chip. The sensor signal processing circuitry includes a dc offset cancellation circuit to ameliorate loss of measurement range associated with chemical sensors. Drawing inspiration from biological olfactory systems, the analog circuits used to process signals from the on-chip odor sensors make use of temporal "spiking" signals to act as carriers of odor information. An on-chip spike time dependent learning circuit is integrated to dynamically adapt weights for odor detection and classification. All the component subsystems implemented on chip have been successfully tested in silicon     

CMOS image sensors: electronic camera-on-a-chip

CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed     

On-chip sensor selection for effective speed-binning

Advance in technology nodes of integrated circuit (IC) fabrication has introduced increased variation. This presents new challenges for delay testing. To address this challenge, speed-binning based on on-chip delay sensor measurements has been proposed to supplement current speed binning methods. However, due to limitations such as computational complexity, information property management, and design placement and routing restrictions, sensor placement cannot all be perfect, and therefore not all sensor data are guaranteed to be beneficial for IC delay classification. Therefore, in this paper we proposed an optimization based on genetic algorithm in order to select the most suitable speed-sensors for speed binning. Based on SPICE simulation as well as silicon data collected from on-chip delay sensors in a commercial design using a sub-65 nm process, we showed that optimizing sensor selection can improve speed-binning accuracy. In both experiments, the proposed optimization algorithm demonstrated improvement over using all sensor data. Result showed the proposed method is capable of improving accuracy beyond 94 and \(93\,\%\), respectively.     

Enhanced printed temperature sensors on flexible substrate

In this paper we present the development of enhanced printed temperature sensors on large area flexible substrates. The process flow is a fully screen printed technology that uses exclusively solution-processed materials. These Screen printed temperature sensors are based on resistive pastes integrated in a Wheatstone bridge circuit. Substrate is a commercial Poly Ethylene Naphtalate (PEN) with a thickness of 125 µm. Functional temperature sensors are demonstrated and characterized with good electrical properties, showing a good sensitivity of 0.06 V/°C at V_in=4.8 V. This sensitivity is enhanced by the annealing and the O₂ plasma treatment. Based on this temperature sensor, we have developed a demonstrator for human body temperature detection.     

Offset and gain calibration circuit for MIM-ISFET devices

A programmable calibration circuit for sensors is proposed in this paper. It carries out gain and offset compensation by adding or subtracting appropriate correction factors to the transfer function of each sensor. Digital programmability makes it possible to automate calibration, paving the way for batch calibration. The circuit was designed for a specific sensor structure, a MIM-ISFET, which was modeled in HSpice. The proposed scheme reduces the offset and gain error due to process variations of both the sensor and the readout circuit. Offset error is reduced from 123 to 20 mV and gain error is reduced from 10.6 to 6.4 mV/pH. Relative error is reduced in the whole sensing range from 13 to 4 %. The circuit was designed in a 0.18 μm standard CMOS process, occupies an area of 115 × 100 μm² and consumes 2.3 mW.