Effect of copper ions implantation on the corrosion behavior of ZIRLO alloy in 1 mol/L H2SO4

1. IntroductionZIRLO alloy is widely used in the nuclear industrybecause of its low thermal neutron capture cross sec-tion, favorable mechanical properties, and good corro-sion resistance. For example, ZIRLO alloy can serve asfuel cladding, spreaders for …     

Irradiation damage simulation of Zircaloy-4 using argon ions bombardment

To simulate irradiation damage, argon ion was implanted in the Zircaloy-4 with the fluence ranging from 1 × 10^16 to 1 × 10^17 cm^-2, using accelerating implanter at an extraction voltage of 190 kV and liquid nitrogen temperature. Then the influence of argon ion implantation on the aqueous corrosion behavior of Zircaloy-4 was studied. The valence states of elements in the surface layer of the samples were analyzed using X-ray photoelectron spectroscopy （XPS）. Transmission electron microscopy （TEM） was used to examine the microstructure of the argon-implanted samples. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted Zircaloy-4 in 1 mol/L HzSO4 solution. It is found that there appear bubbles on the surface of the samples when the argon fluence is 1 × 10^16 cm^-2. The microstructure of argon-implanted samples changes from amorphous to partial amorphous, then to polycrystalline, and again to amorphous. The corrosion resistance of implanted samples linearly declines with the increase of fluence approximately, which is attributed to the linear increase of the irradiation damage.     

STUDY ON COMPLEX IMPEDANCE SPECTROSCOPY OF CU-IMPLANTED SEMICONDUCTING (BaO.72PbO.28)TiO3 CERAMICS

The ac impedance of Nb-doped semicon-ducting (Bao.72Pbo.28)TiO3 ceramics implanted with copper ions(200keV,6X1015 and 1X1017 ions/cm2) in the temperature range 25-320C and the frequency range 10 Hz -13MHz was measured. According to the change of impedance spectroscopy and the equivalent circuit model of semiconducting(Ba, Pb)TiO3 ceramics, the dependence of resistance of bulk and grain-boundary on temperature was analyzed. The results show that relatively low dose must be used to increase the magnitude of the positive temperature coeffieient of resistance(PTCR)effects in the cermmics. In addition,the effects of Cu ion implantation on the PTCR behavior of the ceramics was studied by raststance-tempera-ture measurement.     

Effect of lanthanum ion implantation on oxidation behavior of zircaloy

In order to investigate the effect of lanthanum ion implantation on the oxidation behavior of zircaloy at 500℃, Zircaloyspecimens were implanted by lanthanum ions with a dose range from 5×10~(16) to 2×10~(17) ions/cm~2 at room temperature, and then oxi-dized at 500℃ for 100 min. The valence of the oxides in the scale was analyzed by X-ray Photoelectron Spectroscopy (XPS). Thephase structures of the oxides in the scale were examined by Glancing Angle X- ray Diffraction (GAXRD). With the increase of im-planted lanthanum ions dose, the phase structures in the oxide scale are transformed from monoclinic zirconia to hexagonal one andthen to monoclinic one again. The measurement of weight gain showed that a similar change from the decreased gain to increasedone again is achieved in the oxidation behavior of lanthanum ion implanted zircaloy compared with that of as-received zircaloy     

金属硅化物熔体中不同形貌SiC晶体的生长

以过渡族金属硅化物为溶剂，采用自发熔渗法和溶液法来研究不同形貌SiC晶体在金属硅化物熔体中的生长情况.利用光学显微镜（OM）、扫描电镜（SEM）、体视显微镜等对熔渗试样和采用溶液法生长的单晶和晶须的形貌结构进行了观察和表征，利用X射线衍射仪（XRD）对采用溶液法生长的晶体和晶须进行了相组成和晶型的表征，并讨论了SiC晶须和SiC单晶的生长机理.结果表明，Fe5Si3、CoSi、Co4.5CrSi4.5、Ti2.3Si7.7等熔体适合生长SiC单晶，FeSi、FeSi2等熔体适合生长SiC晶须，而当Fe3Si熔体渗入SiC预制件后，仅有石墨相析出.     

Cu gettering to nanovoids in SOI materials

Silicon-on-insulator (SOI) materials have a number of inherent advantages over bulk silicon substrates owing to their high speed, low power complementary metal-oxide-semiconductor (CMOS) integrated circuits, such as immunity to radiation hardness, high speed, and high tem-perature tolerance [1]. Separation by implantation of oxygen (SIMOX), bonding and etch back (BESOI) and Smart-Cut are the leading technologies for SOI material fabrication. Transitional metal impurities such as Cu, F…     

Preparation of spherical and dense LiNi0.8Co0.2O2 lithium-ion battery particles by spray pyrolysis

With citric acid as a polymeric agent layered LiNi0.8Co0.2O2 materials were synthesized by a spray pyrolysis method. The LiNi0.sCo0.2O2 particles were characterized by means of XRD, SEM and TEM. The electrochemical performances of LiNi0.8Co0.2O2 particles were studied in a voltage window of 3.00-4.35 V and at a current density of 30 mA/g. The results show that in the pilot-scale spray pyrolysis process, the morphology of particles is dependent upon the precursor concentration and flux of carrier gas. The initial discharge capacity of the LiNi0.8Co0.2O2particles at 720 ℃ for 12 h is 187.3 mA.h/g, and the capacity remains 96.8% with excellent cycleability after 30 cycles. The LiNi0.8Co0.2O2 samples synthesized under the optimized conditions by the spray pyrolysis method shows a good electrochemical performance.     

Nanometer structure and conductor mechanism of polymer modified by metal ion implantation

Polyethylene terephthalate (PET) has been modified by Ag, Ti, Cu and Si ion implantation with a dose ranging from 1 × 1016 to 2 × 1017 ions/cm2 using a metal vapor vacuum arc (MEVVA) source. The electrical properties of PET have been improved by metal ion implantation. The resistivity of implanted PET decreased obviously with an increase in ion dose. The results show that the conductive behavior of a metal ion implanted sample is different from Si-implantation samples. In order to un-derstant the mechanism of electrical conduction, the structures of implanted layer were observed in detail by XRD and TEM. The nano carbon particles were dispersed in implanted PET. The nano metallic particles were built up in metallic ion implanted layers with dose range from 1 × 1016 to 1 × 1017 ions/ cm2. The nanometer metal net structure was formed in implanted layer when a dose of 2 × 1017ions/ cm2 is reached. Anomalous fractal growths were observed. These surface structure changes revealed conducting mechanism evo     

SURFACE ELECTRICAL PROPERTIES AND STRUCTURE OF YTTRIA-PARTIALLY-STABILIZED ZIRCONIA IMPLANTED WITH 57Fe IONS

Sintered plates of 5mol% yttria-partially-stabilized zirconia have been implanted at room temperature with 5×1015to 2×1017 Fe+ ions/cm2 at 140 KeV.Electrical measurement,Rutherford backscattering spectroscopy(RBS),Raman spectroscopy and X-ray photoelectron spectroscopy(XPS) have been used to study the surface electrical properties and the structure of the implanted layer before and after thermal annealing treatment in N2.     

The modification behaviour for Si implanted PET

Polymeric solids have low density, high ability to form intricate shapes, versatile electronic properties and low manufacturing cost. However their uses are still limited by their inherent softness and unexpected dielectric properties. In order to enhance their electrical and mechanical properties, ion implantation techniques have been explored[1—3]. Recent studies have shown that ion implantation is very effective for improving surface properties of polymers such as surface hardness and wear…     

Metallurgical microstructure control in metal-silicon reactions

A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making current-based Si devices.Thus,the microstructure control of silicide formation on the basis of kinetics of nucleation and growth has relevant applications in microelectronic technology.Repeating events of homogeneous nucleation of epitaxial silicides of Ni and Co on Si in atomic layer reaction is presented.The chemical effort on intrinsic diffusivities in diffusion-controlled layer-typed intermetallic compound growth of Ni2Si is analyzed.     

Impact of high dose Kr^＋ ion irradiation on the corrosion behavior and microstructure of Zircaloy-4

In order to investigate the ion irradiation effect on the corrosion behavior and microstructure of Zircaloy-4, the Zircaloy-4 film were prepared by electron beam deposition on the Zircaloy-4 specimen surface and irradiated by Kr ions using an accelerator at an energy of 300 keV with the dose from 1×1015 to 3×1016ions/cm2. The post-irradiation corrosion tests were conducted to rank the corrosion resistance of the resulting specimens by potentiodynamic polarization curve measurements in a 0.5 mol/L H2SO4 water so- lution at room temperature. Transmission electron microscopy (TEM) was employed to examine the microstructural change in the surface. The potentiodynamic tests show that with the irradiation dose increasing, the passive current density, closely related to the surface corrosion resistance, decreases firstly and increases subsequently. The mechanism of the corrosion behavior transformation is due to the amorphous phase formation firstly and the amorphous phase destruction and the polycrystalline structure formation in the irradiated surface subsequently.     

Ni+离子注入AlN薄膜的磁性研究

用40 kV的Ni+离子在室温下对玻璃衬底上生长的AlN薄膜进行离子注入,注入剂量为5.0×1016 ions/cm2,在N2气氛下分别经400℃,600℃退火1h后,用超导量子干涉仪分析样品磁学特性.结果表明,Ni注入AlN薄膜未退火样品显示铁磁性;经400℃退火后铁磁性增强,居里温度大于室温;经600℃退火后样品铁...     

Antibacterial and corrosive properties of copper implanted austenitic stainless steel

Copper ions were implanted into austenitic stainless steel (SS) by metal vapor vacuum arc with a energy of 100 keV and an ions dose range of (0.5-8.0)×1017 cm-2. The Cu-implanted SS was annealed in an Ar atmosphere furnace. Glancing X-ray diffrac-tion (GXRD), transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) were used to reveal the phase compositions, microstructures, and concentration profiles of copper ions in the implanted layer. The results show that the antibacterial property...     

钛离子注入对镀膜光白托力克玻璃光学性能的影响

将钛离子以不同的剂量、能量注入到镀膜光学白托片中进行表面改性。利用UV－240型紫外可见分光光度计、DP－A302型红外分光光度计、激光椭圆测厚仪等仪器,测定了注入前后及退入前后膜层析射率、紫外反向吸收等光学性质并加以分析,发现经离子注入及退火,玻璃的折射率得到提高,玻璃对红外、紫外的吸收增强。     

4H-SiC离子注入层的欧姆接触的制备

用氮离子注入的方法制备了4H-SiC欧姆接触层。注入层的离子浓度分布由蒙特卡罗分析软件TRIM模拟提取,Si面4H-SiC-Ni/Cr合金欧姆接触的特性由传输线方法结构进行了测量,得到氮离子注入层的方块电阻Rsh为30 kΩ/square,Ni/Cr合金与离子注入层的欧姆接触电阻ρc为7.1×10-4Ωcm2。     

高产植酸酶酵母Candida Krusei WZ-001的等离子束诱变选育

从土壤中筛选得到的 1株高产植酸酶酵母菌CandidaKruseiWZ 0 0 1 ,利用等离子诱变方法对这一菌株进行诱变 ,获得 1株植酸酶高产突变株 ,其酶活性比出发菌株提高了 98%。比较了N+、H+、Zn2 +3种离子注入菌体的诱变效果 ,实验结果表明N+离子注入效果最佳 ,注入最佳剂量为 5 0× 1 0 13N+/cm2 。     

Property improvement of multilayer TiN/Ti films with C+ implantation

Using the MEVVA ion source, carbon ions have been implanted in TiN coatings deposited by multiarc ion plating. The Vickers microhardness of the C⁺-implanted TiN films increased with the increase in the ion flux and dose. X-ray diffraction (XRD) analysis showed that the TiC phases had been formed in the films. In addition, the films had the preferred growth orientations of TiN and TiC, both of which were (111) orientation after annealing at 500°C for 30 min. Auger electron spectra analysis indicated that C⁺-implanted profile was in typical Gaussian-like distribution in single films. The distribution with multipeaks of C atoms was obtained in multi-layer TiN/Ti. The possibility of the multilayer films (Ti(C,N)/TiN/Ti(C,N)/TiN and Ti(C,N)/TiC/Ti(C,N)/TiC) forming using the C-implanted TiN/Ti films is presented for the first time. Project supported by the National Natural Science Foundation of China and the “863” Hi-Tech Program of China.     

LiAl0.05Mn1.95O4正极材料锂离子嵌脱动力学研究

采用超声辅助溶胶凝胶法成功制备了LiAl0.05Mn1.95O4正极材料,并利用循环伏安和电化学阻抗谱研究了不同合成方法对LiAl0.05Mn1.95O4正极材料锂离子嵌脱动力学的影响.结果表明:超声辅助溶胶凝胶法制备的尖晶石材料具有更好的可逆性和最小的电荷转移电阻;LiMn2O4(sol-gel)、LiAl0.05Mn1.95O4(sol-gel)和LiAl0.05Mn1.95O4(UASG)的交换电流密度分别为2.57×10-2、4.16×10-2、5.08×10-2mA.cm-2,固相锂离子扩散系数分别为3.27×10-10、4.94×10-10、6.91×10-10cm2.s-1,表明超声辅助溶胶凝胶法制备的样品具有较好的锂离子嵌脱动力学.     

船舶用低合金钢在模拟海水中的腐蚀行为研究

以船舶用低合金为研究对象,采用电化学交流阻抗谱和极化曲线研究浸泡时间和氯离子浓度对低合金钢腐蚀的影响。实验结果表明,随着氯离子浓度从10^-5 mol/L增加到10^-1 mol/L,低合金钢的腐蚀速率从3.2×10^-6 mA/cm^2增加到1.1×10^-5 mA/cm^2,显著增加了低合金钢的腐蚀速率;此外随着浸泡时间从1d增加到30d,低合金钢在模拟海水中的电荷转移电阻有先增大后减小,最后渐渐稳定的趋势,第三天时电荷转移电阻达到最大的800Ω。