铁磁性Er0.2Sm0.8Mn6Ge6化合物的正磁电阻效应

对天然多层膜材料Er0.2Sm0.8Mn6Ge6化合物（441K以下为铁磁性）磁电阻和热容进行了测量,结果表明,使用50kOe的外磁场,Er0.2Sm0.8Mn6Ge6化合物的磁电阻值在45K以下为正,随着温度的降低,磁电阻逐渐增大,最大磁电阻达5．89％。本文对于铁磁体中出现正磁电阻给出了解释。     

稀土Dy、退火对Dyx(Co40Ag60)100-x颗粒膜的结构与巨磁电阻效应的影响

采用磁控溅射法制备了Dyx(Co40Ag60)100-x颗粒膜.X射线衍射实验结果表明,Dyx(Co40Ag60)100-x颗粒膜的晶体结构具有一定的择优取向,退火温度升高能够促进这种择优取向并加速Ag颗粒的聚集生长和Ag中的Co发生相分离;稀土元素Dy起到细化晶粒的作用,并且阻碍晶面择优取向的进程,导致薄膜结构中的晶...     

巨磁电阻效应的非接触光学表征方法研究

根据自平均极限模型推导了在巨磁电阻薄膜中折射系数与自旋非对称因子的关系。用傅立叶变换红外光谱仪组建了磁折射效应测试装置,并测试了自旋阀多层薄膜(Si/PtMn/CoFe/Ru/CoFe/Cu/Co/NiFe)的磁折射效应。结果表明:在红外波段,可以用磁折射效应表征巨磁电阻效应。     

Cu掺杂对 Fe/Si多层膜的层间耦合和负磁电阻效应的影响

研究了Cu掺杂对Fe/Si多层膜的层间耦合和负磁电阻效应的影响。在用磁控溅射方法制备的Fe/Si多层膜中,发现在Si的标称厚度tSi =1.9nm附近存在一较强的反铁磁耦合（AFM）峰和与之相对应的负磁电阻峰,在Si层中掺入6％的Cu后,发现反铁磁耦合峰的饱和场显著降低,峰宽变窄,峰位略向较厚方向移动。掺杂后磁电阻峰的宽和峰位变化与AFM峰相似,而磁电阻峰值则略有下降,在液氮温度T＝77K下,掺杂前后具有负磁电阻效应的多层膜样品阻率都降低,而磁电阻效应和饱和场均增大,实验结果表明,用磁控溅射方法制备的Fe/Si多层的层间耦合机制和磁电阻效应的机制与磁性金属／非磁金属多层膜的层间耦合及磁电阻效应的机制是一致的。     

亚锰酸盐La0.7-xYxCa0.3MnO3的电磁特性和磁电阻效应

研究了用固相反应法制备亚锰酸盐多晶样品La0.7-xYxCa0.3MnO3,并研究了Y的不同掺杂(x=0.1,0.2)对样品的晶体结构、电磁特性和磁电阻效应的影响.实验结果表明,随着温度的降低,x=0.1样品的R-T曲线没有出现峰值,而x=0.2样品出现了峰值,显示了复杂的输运特性.两种样品的磁电阻Rm都随着温度的降低而升高,但都没有出现峰值.x=0.2的样品在较宽的温区内,磁电阻效应都很显著,而且Y掺杂由x=0.1提高至x=0.2,磁电阻效应增强.     

亚锰酸盐La0.7-xYxCa0.3MnO3的电磁特性和磁电阻效应

研究了用固相反应法制备亚锰酸盐多晶样品La0.7-xYxCa0.3MnO3,并研究了Y的不同掺杂(x=0.1,0.2)对样品的晶体结构、电磁特性和磁电阻效应的影响.实验结果表明,随着温度的降低,x=0.1样品的R-T曲线没有出现峰值,而x=0.2样品出现了峰值,显示了复杂的输运特性.两种样品的磁电阻Rm都随着温度的降低而升高,但都没有出现峰值.x=0.2的样品在较宽的温区内,磁电阻效应都很显著,而且Y掺杂由x=0.1提高至x=0.2,磁电阻效应增强.     

类钙钛矿型La_(1-x)Sr_xMnO_3超磁电阻材料的自蔓延燃烧合成研究

采用自蔓延燃烧合成法成功合成了具有类钙钛矿型结构的复杂金属氧化物材料La_(1-x)Sr_xMnO_3。结果表明,通过控制KMnO4掺量可以有效地控制燃烧合成过程中的反应温度、速度,并影响反应的进行和产物相的形成。在La1-x SrxMnO3超磁电阻材料的燃烧合成过程中,液相Mn的产生能影响反应温度和燃烧波传播速度。对合成材料的性能表征,发现自蔓延高温合成的La_(1-x)Sr_xMnO_3在210 K附近会出现金属-绝缘体转变,一定温度范围内材料的磁电阻绝对值可达到13%。     

亚锰酸盐La0.7—xYcCa0.3MnO3的电磁特性和磁电阻效应

研究了用固相反应法制备亚锰酸盐多晶样品La0.7-xYcCa0.3MnO3，并研究了Y的不同掺杂（x=0.1,0.2），对样品的晶体结构，电磁特性和磁电阻效应的影响。实验结果表明，随着温度的降低，X＝0．1样品的R－T曲线没有出现峰值，而x=0.2样品出现了峰值，显示了复杂的输运特性，而种样品的磁电阻Rm都随着温度的降低而升高，但都没有出现出值。X＝0．2的样品在较宽的温区内，磁电阻效应都很显著，而且Y掺杂由x=0.1提高至x=0.2，磁电阻效应增强。     

空位掺杂La（1-x）2／3Ca1／3MnO3的结构及磁电阻效应

利用标准的固相反应法在1200℃烧结了La(1-x)2/3Ca1/3MnO3(x=0,0.02,0.04,0.08,0.10)样品,冷却后,取出部分在1350℃进行再烧结。利用X射线衍射(XRD)和扫描电镜(SEM)对其晶体结构及表面微观结构进行了研究。X射线衍射测量分析表明样品均为单相,单胞仍然具有正交对称性结构(空间群为Pnm a),随着掺杂浓度的增加,晶格常数和晶胞体积逐渐减小。通过扫描电镜研究表明,样品随着掺杂浓度增加,晶粒逐渐增大,均匀性变好;样品在1350℃再烧结条件下,平均粒度要大,空隙度变小。样品随着掺杂浓度的增加,电阻在逐渐增大,磁电阻在逐渐减小。     

TbMn6Sn6化合物的结构和磁性

研究了重稀土金属化合物ＴＭｎ６Ｓｎ６的晶体结构，内禀磁性及其矫顽力随温度和外场变化的规律，ＴｂＭｎ６Ｓｎ６化合物在外场较弱时，热磁曲线呈亚铁磁性；当外场较强时，则表现出铁磁行为，具有变磁性。     

Influence of Tb substitution on low-field magnetocaloric effect in Gd5Si1.72Ge2.28 alloy

The lattice parameters, magnetic phase transition, Curie temperature and magnetocaloric properties for (Gd1-xTbx)5Si1.72-Ge2.28 alloys with x = 0, 0.15, 0.20 and 0.25 were investigated by X-ray powder diffractometry and magnetization measurements. The results show that suitable partial substitution of Tb in Gd5Si1.72Ge2.28 compound remains the first-order magnetic-crystallographic transition and enhances the magnetic entropy change, although Tb substitution decreases the Curie temperature (Tc) of the compounds. The magnetic entropy change of (Gd1-xTbx)5Si1.72Ge2.28 alloys retains a large value in the low magnetic field of 1.0 T.The maximum magnetic entropy change for (Gd0.80Tb0.20)5Si1.72Ge2.28 alloy in the magnetic field from 0 to 1.0 T reaches 8.7 J/(kg·K),which is nearly 4 times as large as that of (Gd0.3Dy0.7)5Si4 compound (|△Smax| = 2.24 J/(kg·K), TC = 198 K).     

多晶La0.49Sr0.51(Mn1-xNbx)O3的磁电阻研究

采用四探针法测量多晶La0.49Sr0.51(Mn1-xNbx)O3(x=0,0.05,0.15和0.25)在磁场下的电阻率温度曲线.实验结果显示:①在0.45T磁场下,对于x=0和x=0.25的样品,几乎观察不到磁电阻(Magnetoresistance,MR)效应,而对于x=0.05和x=0.15的样品,磁电阻效应较明显.这种差异可能与样品中铁磁相是否占主导作用有关;②比较x=0.05和x=0.15这两种样品的MR机制,前者可能与载流子在弱连接晶界上的自旋相关散射有关,且其主要是非本征的;而后者主要是本征的.     

Dy纳米粉含量对烧结Nd-Fe-B磁体的影响

为了改善烧结Nd-Fe-B磁体的磁性能和力学性能,采用二元合金法添加Dy纳米粉制备了高性能Nd-Fe-B磁体.利用扫描电子显微镜、X射线衍射仪、粒度分布仪、磁滞回线测试仪与维氏硬度仪对烧结Nd-Fe-B磁体的形貌、微观结构、化学成分、磁性能和力学性能进行了分析.结果表明,随着Dy元素质量分数的增加,磁体矫顽力大幅提高,剩磁和最大磁能积略有下降.相比未添加Dy元素的磁体,当Dy元素质量分数为0.8%时,磁体矫顽力提高了5.4%,剩磁和最大磁能积分别下降了1.3%和1.5%,维氏硬度提高了7.1%,此时磁体的综合磁性能最优.     

磁电阻效应的原理及其应用

对几种磁阻效应作用机理和磁阻元件在传感器中的应用进行了综述,详细介绍了几种磁阻传感器的工作原理,对几类常用的磁阻传感器的性能进行了比较,并对磁阻传感器的发展进行了展望.     

Three-Dimensional Normal Stress for Controlling Electronic Structure and Magnetic Property of Fe2 Ge

A system study of the three-dimensional normal stress for regulating electronic structure and magnetic property of Fe_2Ge is studied. The density states of Fe more than 92% contribution come from Fe 3d,the density states of Ge mainly contributed from Ge 4p and Ge 4s,and the Fe 3d spin induces the Ge 4p electron transfer. The inductive effect increases germanium electron energy,weakens the Fe spin density of states,opposes the stability of the ferromagnetic state. The magnetic moment varies from 5 to 3 μB with the stress charges from-30 to 30 GPa. The charge of Fe is negative whereas the Ge atom is positively charged,the Fe atom loses charge,the charge transfers to the Ge atom. The unevenly distributed charge forms the newoccupy state and spin polarization state in the Fe_2Ge electron structure system. The Fe is the electron donor,the total electron is transferred to Ge,but the total numbers of gain electron and total numbers of lost electron are not equal,so the Fe_2Ge electron system may have hybridization between the Fe 3d state and Ge 4p state.The magnetic of Fe_2Ge mainly comes from the unoccupied Fe 3d orbital,the Fe 3d is positive spinpolarization state and the spin-polarization strength is decreased,the Ge 4p is negative spin-polarization state and the spin-polarization strength are increased. M oreover,electrons-spin polarization is relevant to the structure parameters of the Fe_2Ge system,and controls spin-polarized electronic behavior by means of adjusting ferromagnetic.     

机械球磨对Sr2FeMoO6磁电阻性能的影响

利用固相反应方法合成了纯相的Sr2FeMoO6多晶块状陶瓷材料,并通过机械球磨方法改变了其晶界状态,研究了晶界状态对Sr2FeMoO6粉末磁电阻性能的影响．X射线衍射分析表明,机械球磨并没有改变材料的晶体结构,但却在晶粒间界处引入了SrMoO4绝缘相．而且其含量随着球磨时间的增加而增加．不同磁场下的磁电阻测量结果显示,由于一定量SrMoO4绝缘相的存在,使晶粒间的绝缘隧穿势垒得到加强,有利于自旋极化电子在晶粒间的隧穿,提高了Sr2FeMoO6多晶粉末材料低温时的磁电阻值．随着温度的升高,磁电阻值迅速下降,表现出较强的温度依赖关系．分析结果表明：晶界状态对Sr2FeMoO6多晶粉末磁电阻的性能有十分重要的影响．     

Effect ofthe manganese doping concentration and site on the magnetism of graphene

Based on the density functional theory, the total magnetic moment and the density of states of Mn-doped graphene are calculated in the case of different impurity concentrations and lattice positions. The results show that the total magnetic moment goes up with the increase of doping concentration. Under the condition of the same impurity concentration, the Mn atoms in different spin directions can make the magnetism stronger. Meanwhile, it is found that the ability to gain and lose electrons of impurities, and the magnetic properties of the supercell are associated with the lattice positions occupied by Mn atoms. Doping in the same lattice has an advantage to enhance the magnetism, meaning that the magnetism of graphene can likely be controlled by changing doping conditions. By analyzing the total and partial density of states, it is concluded that the magnetic mechanism of Mn-doped graphene is relevant to the p-d exchange correlation function of Mn-d and C-p electrons.     

多晶Ca1+xB6陶瓷制备及其弱磁性能分析

分别采用常规烧结技术和热压烧结技术，根据固相氧化还原反应原理在不同温度制度下制备了多晶Ca1＋xB6（x〈0．04）陶瓷材料。物相分析发现，在烧结温度较低时，样品中含有较多CaB2O4相，随烧结温度升高，CaB2O4相逐渐减少；样品的铁磁性能分析表明，所制备多晶Ca1＋xB6陶瓷在室温下均呈铁磁态，这种现象与报道的CaB6单晶铁磁性行为存在差异.