基于标准CMOS工艺的Si基光发射器件

基于反偏雪崩击穿的发光原理,按照Chartered 0.35μm标准CMOS工艺要求,设计并制作了一种Si基光发射器件。在室温下对器件特性进行了初步测试,正向导通电压为0.75V,反向击穿电压为8.4V,能够在一个较宽的电压范围(8.4～12V)内稳定工作。总结了工艺对器件电学特性的影响,并将该器件结构与Snyman等人研究的器件结构进行了比较分析。该器件较强的边缘发光在平面结构的Si基片上集成光互联系统中将会有一定的应用价值。     

Design and fabrication of integrated Si-based optoelectronic devices

We have designed and fabricated novel Si-based optoelectronic devices. To this aim, different Si-based optical sources have been made and their performances at room temperature compared. Er-doped Si p–n junctions, operating at 1.54 μm and exhibiting an efficiency of 0.05% at room temperature, have been integrated with planar Si rib waveguides using either epitaxial Si or silicon on insulators (SOI) wafers. Optical characterization of these waveguides reveals very low transmission losses (below 1 dB/cm). However, Er-doping of the waveguide core, needed for the realization of the light source, results in a large increase of the losses as a consequence of absorption by the free electrons introduced by the rare earths. These losses can be suppressed when the junction is reverse biased and the whole Er profile is embodied in the depletion layer. Since this also allows efficient pumping of Er ions by hot carriers, the performances of the diodes and of the waveguides can be suitably combined. This optimized structure has also been used to design electrically pumped optical amplifiers and lasers, whose performances have been simulated.     

A selective epitaxial SiGe/Si planar photodetector for Si-basedOEIC's

A P-i-N SiGe/Si superlattice photodetector with a planar structure has been developed for Si-based opto-electronic integrated circuits. To make the planar structure, a novel SiGe/Si selective epitaxial growth technology which uses cold wall ultrahigh-vacuum/chemical vapor deposition has been newly developed. The P-i-N planar SiGe/Si photodetector has an undoped 30-Å Si_0.9Ge_0.1/320-Å Si, 30 periods, superlattice absorption layer, a 0.1-μm P-Si buffer layer, and a 0.2-μm P⁺-Si contact layer on a bonded silicon-on-insulator (η_ext). The bonded SOI is used to increase the external quantum efficiency (η_ext) of the photodetector. Moreover, a 63-μm deep/128-μm wide trench, to achieve simple and stable coupling of an optical fiber to the photodetector, is formed in the silicon chip. The P-i-N planar photodetector exhibits a high η_ext of 25-29% with a low dark current of 0.5 pA/μm² and a high-frequency photo response of 10.5 GHz at λ=0.98 μm     

二维空气环型光子晶体的负折射现象

采用平面波展开法和时域有限差分法研究了二维空气环型光子晶体的负折射现象。通过平面波法计算了三角晶格空气环型光子晶体的能带结构和等频曲线分布, 通过等频曲线的分析得到了光子晶体有效折射率与光波归一化频率之间的关系, 并模拟了光波在有效折射率为 -1的平板和楔形结构光子晶体中的负折射传输过程。模拟结果表明, 优化设计的空气环型光子晶体可以实现较为理想的负折射现象, 且特定频率光波实现负折射对结构参数的要求较低, 有效的降低了实验室制作光子晶体负折射材料对结构参数的苛刻要求。在实验室采用X光刻蚀方法制作空气环型光子晶体能够节省大量的刻蚀时间, 进而降低光子晶体的制作成本。     

平面波导有效折射率数值解及光场分析

提出了一种计算有效折射率（ｎｅｆ）的数值迭代算法,并通过计算得出平面光波导的光场分布,并由此确定平面光波导的厚度。     

Novel Planar Metamaterial with a Negative Refractive Index

A new planar metamaterial (MTM) with simultaneous negative values of permittivity (ε) and permeability (μ) is proposed. Our MTM is composed of two identical copper patterns etched on both sides of dielectric laminate, which is very thin and easy to fabricate. Unlike conventional MTMs, the proposed structure shows a negative refractive index (NRI) behavior with respect to a normally incident wave. To explain the underlying principle of the NRI characteristics, an equivalent resonant circuit model based on surface current density distribution is investigated. An eigenmode analysis and a three‐dimensional wave simulation for the stacked MTM prism are also performed to verify the existence of negative refraction. The experimental results from the transmission and reflection measurement ensure the validity of our design approach and show good agreement with the theoretically predicted effective medium parameters.     

热激励硅基谐振型压力传感器技术研究

提出一种以电阻发热实现梁激励的单梁硅基谐振型压力传感器结构。利用硅/硅键合、减薄抛光和IC工艺技术,开展硅基谐振型压力传感器技术的研究,解决了三维体加工与IC工艺兼容的关键技术问题,成功地研制出热激励硅基谐振型压力传感器样品。该器件在常压下测试,其品质因子Q值达到1362.5,证实了该谐振型压力传感器结构是可行的。这为研制硅基谐振型压力传感器提供了一种新的方法。     

Some silicon-based heterostructures for optical applications

In this paper, we will present our recent research on the growth and characterization of some Si-based heterostructures for optical and photonic devices. The heterostructures to be discussed are ZnO nanorods on Si, SiO₂, and other substrates such as SiN and sapphire. We will also consider strained Si_1−xGe_x/Si heterostructures for Si optoelectronics. The performance and functionality extension of Si technology for photonic applications due to the development of such heterostructures will be presented. We will focus on the results of structural and optical characterization in relation to device properties. The structural characterization includes x-ray diffraction for assessment of the crystallinity and stress in the films and secondary ion mass spectrometry for chemical analysis. The optical properties and electronic structure were investigated by using photoluminescence. The device application of these thin film structures includes detectors, lasers, and light emitting devices. Some of the Si-based heterostructures to be presented include devices emitting and detecting up to the blue-green and violet wave lengths.     

共面波导电极聚合物电光调制器多层结构研究

提出了两种基于共面波导(CPW)电极的多层聚合物电光调制器模型结构,分别为补偿层型结构和屏蔽层型结构。采用了保角变换的计算方法给出了基于CPW电极结构的多层电光调制器的特性参数的计算结果。与传统调制器结构性比较,补偿层型结构能够有效的减小光波与微波传输有效折射率的差,屏蔽层型结构不仅能够减小光波与微波传输有效折射率的差,而且能够通过优化结构参数,有效地消除了微波与光波之间的折射率差,可实现调制信号速率和调制电极阻抗的同时匹配。     

Design of MMI 1×8 Optical Power Splitters Used Si-based SiO2 Waveguide

An initial structure design of MMI 1 × 8 optical power splitters is reported. The waveguide material is Si-based SiO2 Ge-doped and deposited by PECVD method. Embedded strip structure is implied in the section design. By using BPM-CAD,a favorable result is obtained that this device has a sound uniformity and fairly low loss. Meanwhile,simulations of designs with certain changed parameters is also implemented for a better design configuration.     

康普顿型自由电子激光光导效应理论研究

对康普顿型自由电子激光（ＦＥＬ）光导效应进行了理论分析和数值计算。推导出适用于三维自由电子激光器中的电子束的等效折射率，说明高斯平面波激光场是电子束等效折射率按平方律分布即类透镜介质的结果。对自由电子激光强度和相位分布、光束半径以及等效折射率等进行了数值模拟，并对模拟结果进行了分析。     

硅基锗PIN光电探测器的研究进展

随着硅基锗薄膜外延技术的突破,基于硅基锗材料的光电子器件快速发展,其中以硅基锗光电探测器最为突出。由于锗可以实现近红外通信波段的光吸收,而且完全兼容硅的CMOS工艺,硅基锗探测器几乎成为硅基光探测的唯一选择。文章主要介绍了面入射和波导耦合两类常见硅基锗光电探测器的研究进展,包括典型的器件结构,以及提升响应度和带宽等性能的主要途径。     

Si基异质结构发光的研究现状

综述了Ｓｉ 基异质结构发光研究的现状。介绍了Ｓｉ 材料本身的本征发光、激子发光、杂质发光等特性,描述了掺Ｅｒ－ Ｓｉ 的发光、Ｓｉ 基量子结构（ 量子阱、量子点） 的光发射,重点研究ＳｉＧｅ／Ｓｉ 异质结构的发光性质。同时还对多孔Ｓｉ 发光、Ｓｉ 基发光二极管（ＬＥＤ） 与Ｓｉ 双极晶体管（ＢＪＴ） 集成、Ｓｉ 基上垂直腔面发射激光器（ＶＣＳＥＬ） 与微透镜的混合集成作了简要的介绍。     

平面手征结构的旋光度精密测量

基于精密步进电机和光纤光谱仪的光学测试系统,优化设计了一种精确测量手征结构样品旋光度的方案。对手征样品旋光性的理论分析结果表明,由于周期性手征结构样品制作过程中90°旋转对称性被打破,线偏振光经过样品后偏振面旋转角度与入射光的偏振面角度有关。实验测量结果直接证明了理论分析的正确性。利用设计的光学测试系统对采用电子束光刻技术制作的周期性平面手征结构样品进行旋光度测量的结果表明,样品在波长为633nm处具有0.05°的旋光度,很好证明了研制的周期性平面手征结构具有一定的旋光性。     

Si基光电子学的研究与展望

Si基光电子学是为顺应二十一世纪以现代光通信和光电子计算机为主的信息科学技术发展需要，在全世界范围内迅速兴起的一个极为活跃的研究前沿。其最终目标之一是为了实现人们所期盼的全Si光电子集成电路．本文尝试性地评论了这一集Si材料技术、纳米技术、微电子技术以及光电子技术为一体的新型交叉学科，近年来在直接带隙Si基低维材料的设计、晶粒有序Si基纳米材料的制备与稳定高效Si基发光器件的探索等方面所取得的若干重要研究进展，并预测了全Si光电子集成技术的未来发展趋势。     

Special features of the magnetodiode effect in multivalley semiconductors at low temperatures

The magnetodiode effect in a planar p-i-n structure was analyzed theoretically. This effect is accompanied by an intervalley redistribution of electrons in the vicinity of the structure’s Hall surfaces at which the nonequilibrium charge carriers recombine. It is shown that consideration of the superposition of transverse charge-carrier fluxes caused by both the Lorentz force and the intervalley redistribution makes it possible to interpret the following special features of the current-voltage characteristics of Ge-and Si-based p-i-n structures at liquid-nitrogen and liquid-helium temperatures: (i) sublinear current-voltage characteristics observed at low temperatures both in the absence and in the presence of a magnetic field; and (ii) the emergence of a high polar magnetosensitivity at strong electric fields (at room temperature, the polar magnetosensitivity vanishes as a result of transition from weak to strong electric fields).     

A millimeter-band planar lens based on an inhomogeneous medium with forced refraction

A millimeter-band planar lens designed on the basis of an inhomogeneous medium with forced refraction, which is formed by a periodic grating of metal strips placed on the surfaces of a dielectric plate, is considered. The possibility of application of this lens as the basis for the design of a multibeam receiving antenna for a radio imaging system is analyzed. The structure of an antenna consisting of a planar lens and a multichannel feed is proposed. The results of the design of a planar lens based on an inhomogeneous medium with forced refraction are presented. A multichannel feed in the form of an array of E-plane horns is analyzed and the results of simulation of this feed with the help of an approximate technique and numerical solution of an electromagnetic problem are given. The design of the multibeam antenna and its experimental characteristics are presented. The possibility of computer correction of radiation patterns of the multibeam antenna is considered.     

Si基SiGe光波导开关的研究现状与最新进展

随着光纤通信技术的迅猛发展,作为光交叉连接和光分插复用核心器件的光开关的作用日益突出.其中Si基光波导开关由于其成本低、可靠性高、器件制作工艺成熟等诸多优点而备受重视.综述了目前Si基光波导开关,特别是SiGe材料光波导开关的研究现状和进展.     

准周期结构一维光子晶体的带隙特性与滤波特性

研究了准周期结构一维光子晶体的带隙特性和滤波特性,对ZnS与MgF2和GaAs与AlAs两种电介质组合的光子晶体在层厚不变、折射率递变和折射率不变、层厚递变以及层厚不变、折射率比递变三种情况下的透射谱作了模拟计算,得到了带隙特性的变化规律,并指出了其在滤波中的应用.与周期结构光子晶体相比,准周期结构光子晶体的透射谱发生移动,带隙宽度改变.     

Progress of Si-based Optoelectronic Devices

Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si - based optoelectronic devices and integrated circuits can be achieved, it will lead to a new irtformational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si- based optoelectronic devices, such as light- emitting diodes, optical waveguides devices, Si photonic bandgap crystals, and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.