一种应用于流水线ADC采样保持电路的设计

介绍了一种应用于12位、10MS/s流水线模数转换器前端的高性能采样保持（SH）电路的设计。该电路采用全差分电容翻转型结构及下极板采样技术,有效地减少噪声、功耗及电荷注入误差。采用一种改进的栅源电压恒定的自举开关,极大地减小电路的非线性失真。运算放大器为增益增强型折叠式共源共栅结构,能得到较高的带宽和直流增益。该采样保...     

一种低功耗的13位100MS／s采样保持电路

采用TSMC0．18μm 1P6MCMOS工艺设计了一种高性能低功耗采样保持电路。该电路采用全差分折叠增益自举运算放大器和栅压自举开关实现。在3．3V电源电压下,该电路静态功耗仅为16．6mw。在100MHz采样频率时,输入信号在奈奎斯特频率下该电路能达到91dB的SFDR,其有效精度可以达到13位。     

一种欠采样应用的高精度低功耗采样/保持电路

设计了一种可用于欠采样情况的高精度、低功耗采样/保持电路。在40 MHz时钟频率下,采样90 MHz输入信号时可达11位以上精度。采用电容翻转结构的采样/保持电路,以消除电容失配的影响;使用栅压自举开关,以提高线性度,实现欠采样输入;并设计了一种高增益、大带宽、低功耗的增益自举套筒式共源共栅(telescopic cascode)运算放大器。电路采用SMIC 0.35μmCMOS工艺实现,电源电压为3.3 V,功耗仅为7.6 mW。     

一种高性能CMOS采样/保持电路

介绍了一种高性能CMOS采样/保持电路.该电路在3 V电源电压下,60 MHz采样频率时,输入直到奈奎斯特频率仍能够达到90 dB的最大信号谐波比(SFDR)和80 dB的信噪比(SNR).电路采用全差分结构、底板采样、开关栅电压自举(bootstrap)和高性能的增益自举运算放大器.采用0.18 μm CMOS工艺库,对电路进行了Hspice仿真验证.结果表明,整个电路消耗静态电流5.8 mA.     

一种14位125MHz采样/保持电路的设计

设计了一种高性能采样/保持(S/H)电路,采用全差分电容翻转型的主体结构,有效减小了噪声和功耗.在电路设计中,采用栅压自举开关,极大地减小了非线性失真,同时,有效地抑制了输入信号的直流偏移.采样/保持放大器电路采用折叠共源共栅结构,由于深亚微米工艺中器件本征增益减小,S/H电路为达到更高增益,采用增益提升技术.设计的采样/保持电路采用0.18μm1P5M工艺实现,在1.8V电源电压、125 MHz采样速率下,输出差动摆幅达到2 V(VP-P),输入信号到奈奎斯特频率时仍能达到98 dB以上的无杂散动态范围(SFDR),其性能满足14位精度、125MHz转换速率的流水线ADC要求.     

一种3V13位40MHz低功耗采样／保持电路

设计了一种3 V 13位40 MHz低功耗采样保持电路.该电路采用带增益提高的全差分折叠式共源共栅运算放大器,满足高速高精度的要求;同时,采用带哑元补偿管的栅压自举开关,减小了采样开关带来的非线性失真.使用XFAB 0.35 μm CMOS工艺库,对整体电路和分块电路进行了仿真和分析.     

一种应用于流水线ADC的采样保持电路设计

设计了一种应用于8位100 MHz采样频率流水线ADC的采样保持电路。采用电容翻转的主体结构及下级板采样技术,设计了使用共源共栅密勒补偿的两级运放。在不影响性能的前提下提出对传统栅压自举采样开关的改进方案,减小了栅压自举开关的面积。该采样保持电路采用CSMC0.18μm CMOS工艺,1.8 V电源电压进行设计。Spectre仿真并使用Matlab分析输出动态特性表明,电路达到了74.7 d B的无杂散动态范围(SFDR),信纳比(SINAD)为60.8 d B。     

低电压低功耗CMOS采样保持电路

设计了一个用于流水线型模数转换器的低压采样保持电路。为降低采保电路中运放的功耗,本文采用了增益补偿的采样保持电路结构,从而用简单的低增益运放达到高精度的效果。并从运放输出建立时间的角度对其输入电流进行优化。为了提高精度,降低采样开关的电阻并减小非线性误差,设计了信号相关自举电压控制的开关。仿真结果表明在1．8V的电源电压下,达到10bit的精度和50Mbit的采样率,整个采保电路的功耗仅为2．3mW。     

一种高性能14位采样保持电路

设计了一种应用于流水线型模数转换器的14位100 MHz采样保持电路,并在电路设计中,提出了一种改进型的栅压自举采样开关电路。在不增加电路复杂性的情况下,栅压自举采样开关电路可以有效地增加采样开关管的开启时间和关断时间,以及电路的可靠性。采样保持电路采用电容翻转式结构,以及采用增益提高的全差分折叠式共源共栅跨导放大器来实现。采用SMIC 1.8 V/3.3 V 0.18 μm 1P6M CMOS工艺对电路进行设计与仿真。仿真结果显示,在10.009765 MHz输入信号,100 MHz工作频率下,输出信号的无杂散动态范围(SFDR)为95.9 dB,与传统自举开关相比,提高了16.3 dB。     

一种采用低阈值技术实现的高速采样保持电路

提出了一种采用低阈值技术实现的高速采样保持电路.采样保持电路采用电容翻转式架构,利用栅压自举开关技术提高了采样开关的线性度,通过下极板采样技术减小了电荷注入效应.提出的放大器与传统的套筒式共源共栅极放大器在电路结构上相同.不同点在于,该放大器采用了低阈值设计技术.优势在于,在特定工艺下通过低阈值器件补偿可实现高增益带宽...     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.