有机电致发光材料的研发现状

有机电致发光器件 (OLED)具有驱动电压低、主动发光等优势 ,在平板显示领域具有极大的应用前景而引起了广泛的关注。与此同时有机电致发光材料的研发也取得了很大的进展。本文介绍了近年来有机电致发光材料 (包括小分子发光材料和聚合物发光材料 )的研发状况     

有机电致发光的研究进展及展望

对有机电致发光(OLEDs)的研究进展进行了综述。内容包括:有机电致发光器件的阴、阳极材料、电极修饰、发光材料、发光效率、新的器件结构以及驱动电路的研究现状。剖析了该领域的研究热点,并展望了其发展应用前景。     

8-羟基喹啉金属配合物电致发光材料

有机/高分子电致发光器件是当前国内外平板显示器技术领域的研究热点,8-羟基喹啉金属配合物(8HQM)以其优良的电致发光性能成为研制高效率的有机/高分子电致发光器件的首选材料.针对近十年来8HQM电致发光材料的研究状况,对其电致发光机制、分子结构及发光性能的关系、分子种类及其最新研究进展,进行综述,展望了其发展趋势.     

白色有机发光材料与器件

综述了白色有机电致发光材料和器件的研究进展;归纳了获取白色有机电致发光的途径和方法;分析了多种器件结构的特点及其材料;结合研究过程中存在的某些问题,从器件的发光效率和色纯度角度,讨论了影响发光器件性能的诸因素及其改进措施.     

有机电致发光材料的新进展

介绍了有机电致发光材料的最新进展,对有机电致发光材料进行分类和评述,重点介绍载流子传输材料和发光材料(小分子发光材料,金属配合物发光材料和聚合物发光材料)的国内外研究现状,并对有机电致发光材料的应用前景进行评述.     

用稀土金属Eu的有机配合物Eu(DBM)2(AA)phen作发光层的有机电致发光薄膜的研究

研究了稀土Eu的有机配合物Eu(DBM)2(AA)phen的光致发光特性.用Eu(DBM)2(AA)phen作发光层,分别用N,N-双(3-甲苯)-N,N-二苯联苯胺(TPD)和聚乙烯基咔唑(PVK)作空穴传输层研制了有机电致发光薄膜器件,研究了它们的电致发光特性.     

有机电致发光器件的研究进展

有机电致发光器件(OELD)具有驱动电压低,功耗小,亮度高,响应速度快等优点,由其制作有机发光显示器件已被视为下一代最理想的显示技术.在简要介绍OELD器件结构、发光机理和制备工艺的基础上系统阐述了有机发光材料、OELD显示器件及驱动技术的研究进展,最后展望了该领域目前存在的问题及可能的解决方向.     

有机电致发光材料

有机电致发光是近年来国际上的一个研究热点,有机电致发光器件具有低压驱动,高亮度,高效率以及能实现大面积彩色显示等优点,在介绍有机电致发光器件的结构和发光原理的基础上,重点介绍了目前用于有机电致发光的各类有机小分子材料和高分子材料。     

用稀土金属Eu的有机配合物Eu(DBM)_2(AA)phen作发光层的有机电致发光薄膜的研究

研究了稀土Eu的有机配合物Eu(DBM ) 2 (AA) phen的光致发光特性。用Eu(DBM) 2 (AA) phen作发光层 ,分别用N ,N 双 (3 甲苯 ) N ,N 二苯联苯胺 (TPD)和聚乙烯基咔唑 (PVK)作空穴传输层研制了有机电致发光薄膜器件 ,研究了它们的电致发光特性     

有机发光器件(OLED)中的界面研究

有机电致发光器件由于其成本低、重量轻、低阈值电压、高亮度、无需背光源而自身发光、宽视角并易于加工等优点成为现代平板显示的研究热点.经过了二十余年的发展,OLED的器件性能得到大幅度改善.然而,距离实用化还有一定差距,如发光效率低以及器件寿命短等问题,成为制约其推广应用的技术瓶颈.OLED的器件性能在很大程度上由其器件中的界面结构所决定.简要介绍OLED中的界面研究进展,围绕金属/有机界面、有机/有机界面、阳极/有机界面以及层内部材料界面展开叙述,讨论界面结构与OLED器件性能之间的关系,并以多种技术手段和方法研究OLED界面分子结构、能带结构、激发态特性及反应等获得的主要结果,在此基础上预测OLED界面研究的发展趋势.     

基于N-苯基咔唑的红色有机电致发光材料

设计合成了一种N-苯基咔唑的衍生物:3-2-(3,3-二腈基亚甲基-5,5-二甲基-1-环己烯基)乙烯基-N-苯基-咔唑(PNCa-2CN).PNCa-2CN的甲醇溶液光致发光光谱和固体膜光致发光光谱峰值分别位于598nm和660nm.以PNCa-2CN作为红色发光材料掺杂在Alq3中,制备了结构为ITO/NPB/Alq3:PNCa-2CN(5%)/Alq3/Mg:Ag/Ag的具有较高发光效率的红色有机电致发光器件,器件的发光峰值为600nm,在外加20V直流电压时达到2372cd·m-2的发光亮度,100mA·cm-2和20mA·cm-2其亮度分别为323cd·m-2和64cd·m-2,器件最大流明效率达到1.3lm·W-1.     

Characteristics of n-type ZnO nanorods on top of p-type poly(3-hexylthiophene) heterojunction by solution-based growth

We report that ZnO nanorods (NRs) are grown on an organic layer of poly(3-hexylthiophene) (P3HT) using a modified seeding layer. Thus, ZnO NRs/P3HT heterojunction light-emitting diodes could be fabricated using the hydrothermal method, in which ZnO acts as an n-type material and P3HT as a p-type material. The ZnO NRs improve the electron transportation in the devices. A three-fold enhancement of current density of the device is observed due to the NRs formed on the P3HT. The electroluminescence (EL) of the optimized ZnO-based device is 1.5 times larger than that without NRs. The influence of the P3HT thickness for the EL spectrum is also discussed.     

To increase the lifetime of electroluminescent (EL) device by low-temperature deposition of organic thin solid films

We have studied the electrical and light-emitting behaviour as well as the lifetime of electroluminescent (EL) cells which consist of naphthoylimide (NPL) as the emitting layer and poly(3-octythiophene) (P3OT) doped with poly(N-vinylcarbazoe) (PVK) as the hole transport layer sandwiched between indium-tin-oxide (ITO) and aluminium (Al) electrodes. The mixed polymer (P3OT : PVK) layer and the emitting layer were deposited by spin coating and by vacuum deposition. When the ITO substrate was cooled to near liquid N2 temperature during the deposition of the NPL emitting layer, the brightness of the cells increased. Characterized by atomic force microscopy (AFM), the emitting layer became more amorphous as the deposition temperature decreased. Results collected show that low temperature deposition of organic thin solid films would be a powerful technique for not only the enhancement of electroluminescent brightness but also increasing the lifetime of EL devices. © 1998 Kluwer Academic Publishers     

Synthesis and blue electroluminescent properties of zinc (II) [2-(2-hydroxyphenyl)benzoxazole]

This study reports on the properties of organic light-emitting diodes (OLEDs) with zinc (II) [2-(2-hydroxyphenyl)benzoxazole] as a hole-blocking layer. OLEDs devices are prepared in a conventional OLEDs structure (i.e., anode/HTL/EL/HBL/cathode and anode/HTL/HBL/EL/cathode). The luminescence efficiencies and the turn-on voltage are significantly affected by the existence of the hole-blocking layer. This is attributed to an excellent hole-blocking property, which is in turn due to the high HOMO energy level (6.5 eV). The device showed luminous efficiency 2.46 lm/W at 5 V. The maximum luminance of about 10,000 cd/m² is obtained, and the turn-on voltage (2.5 V) is affected by the existence of the hole-blocking layer.     

磁控溅射法制备TiO2空穴缓冲层的有机发光器件

采用磁控溅射方法在ITO表面制备了不同厚度的TiO2超薄膜用做有机发光二极管（OLEDs）的空穴缓冲层,使OLEDs（ITO／TiO2／TPD／Alq3／Al）的发光性能得到很大改善。研究TiO2缓冲层厚度对器件性能影响的结果表明,当TiO2缓冲层厚度为1nm,电流密度为100mA／cm^2时,器件的发光效率为2cd／A,比未加缓冲层器件的发光效率增加了近一倍。这是由于加入适当厚度的TiO2缓冲层限制了空穴的注入并且提高了空穴与电子注入之间的平衡。     

不同空穴注入电极对有机薄膜电致发光性能的影响

成功地制备了用铝掺杂的氧化锌（ＡＺＯ）透明导电膜作阳极的有机薄膜电致发光器件，并对单层和双层结构的ＡＺＯ器件以及以两种不同ＩＴＯ作阳极器件的电致发光光谱，电流电压特性，亮度电压特性以及电致发光量子效率进行了详细的比较分析和讨论。     

水溶胶CdSe纳米复合器件电致发光特性的研究

以巯基乙酸为稳定剂在水相中制备了水溶胶CdSe纳米晶,透射电子显微镜表明了纳米晶的形态和尺寸大小.用表面活性剂将CdSe纳米晶从水相中转移到有机相中,将其与具有空穴传输性能的聚合物PVK互溶在一起作为电致发光器件的发光层,以Alq3作为电子传输层,在发光层与Alq3之间加入了空穴阻挡层BCP制备了多层电致发光器件,研究了不同CdSe/PVK配比下水溶胶CdSe纳米复合器件的电致发光特性,结果发现随着水溶胶CdSe纳米晶在纳米复合物中所占比例的降低,电致发光器件的发光强度有所提高,起亮电压有所降低.     

Photo- and electro-luminescent properties of 5,10,15,20-tetra-p-tolyl-21H,23H-porphine doped poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene] films

In this work we studied both photoluminescence (PL) and electroluminescence (EL) properties of 5, 10, 15, 20-tetra-p-tolyl-21H, 23H-porphine (TTP) doped poly[2-methoxy-5-(2′-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) with the weight percentages of 0, 0.5, 1, 3, 5, 8 and 12, respectively. In the process of PL the significant energy transfer occurs from MEH-PPV to TTP, even though there is a small spectral overlap between the absorption of TTP and the emission of MEH-PPV. For investigation of the process of EL a series of organic light-emitting diodes were fabricated with the device structure of ITO/PEDOT:PSS/TTP-doped polymer layer/Al (ITO = Indium Tin Oxides; PEDOT:PSS = poly (3,4-oxyethyleneoxythiophene): poly-(styrene sulfonate)). In devices in which the TTP was present at 5% the emission of EL was dominated by TTP; at lower doping levels MEH-PPV emission dominated. Moreover, multi-color emission was observed at the doping level below 5%. On the other hand, the mechanism for the EL process was reported.     

Electroluminescence of fluorescent–phosphorescent organic light-emitting diodes with regular,inverted, and symmetrical structures

The influence of the device structure on the electroluminescence (EL) properties of fluorescent–phosphorescent organic light emitting diodes (OLEDs) was demonstrated. Four devices with regular-, inverted-, compensated- and symmetrical-emission layers (EMLs) were prepared. In regular-EML device, DCJTB emission increased when the phosphorescent sensitized EML was thickened. In inverted-EML device, low electron energy barrier at the Bphen/BCzVB interface resulted in weakened blue emission. The compensated-EML device, prepared with a red color-compensated layer, showed a color-tunable broadband white emission. Conversely, device with a quantum-like symmetrical-EML showed a narrow color-temperature range. Stable EL efficiency was obtained from regular, compensated, and symmetrical-EML devices. In contrast, EL efficiency of inverted-EML device rolled off significantly, though it had the highest EL efficiency of 11.4 cd/A.