60GHz宽调谐范围推—推压控振荡器设计

基于65nmCMOS工艺实现了60GHz推—推压控振荡器（VCO）设计。采用互补交叉耦合去尾电流源结构以降低相位噪声。压控振荡器输出包含两级缓冲放大器,第二级缓冲放大器偏置在截止区附近以增大二次谐波的输出功率。在1.2/0.8V电源电压下,压控振荡器核心和缓冲放大器分别消耗2.43mW和2.95mW。在偏离中心频率1MHz处相位噪声为-90.7dBc/Hz。输出功率为-2.92dBm。特别的,压控振荡器的调谐范围达到9.2GHz（15.3%）,与调谐范围相关的性能指标FOMT为-182.7dBc/Hz。该压控振荡器可应用于57GHz～64GHz开放频段超高速短距离无线通信。     

推–推振荡器共用谐振器分析与低相位噪声设计

为实现低相位噪声平面振荡器,对推-推振荡器的共用谐振器与相位噪声优化方法进行了研究。提出一种基于多环式开口谐振环的差分传输线,通过加载一对耦合谐振环的方式实现2个单元振荡器之间的弱耦合,提高了共用谐振器的频率选择特性。基于该结构设计并实现了一种X波段推-推振荡器,在设计中采用一种基于振荡器有源品质因子的相位噪声优化方法。测试结果表明：该振荡器在输出二次谐波9.52 GHz处的相位噪声为-115.48 dBc/Hz@100 kHz,基波抑制度达到-54.55 dBc。     

Ku波段低相噪推-推式VCO单片集成电路

基于InGaP-GaAs HBT工艺设计了一款Ku波段推-推式压控振荡器(VCO)微波单片集成电路(MMIC)。采用改进的虚地反馈法对基本振荡单元的奇偶模进行了分析,用谐波平衡法对相位噪声和输出功率进行了优化设计。用ADS软件完成了原理图和电磁场仿真,用Candence Virtuoso完成了版图设计。此VCO MMIC频率覆盖14.5～15 GHz,在2.2 mm×1.2 mm的面积内集成了变容二极管、谐振电路、负阻产生电路,具有体积小、成本低、相位噪声低等特点。在4.2 V单电源电压下,其静态电流为150 mA,典型输出功率为10 dBm,频偏为100 kHz时的单边带相位噪声为-105 dBc/Hz。     

8GHz～12GHz推-推压控振荡器设计

文章介绍了利用推-推的方法实现宽带低相噪压控振荡器,论述了其基本原理和分析方法,并利用计算机辅助设计(CAD)对该方法进行了分析。根据分析结果制作了8GHz～12GHz压控振荡器。测试结果表明,分析结果较好地反映了实际结果。推-推的方法能有效提高晶体管的工作频率,同时还可以改善压控振荡器的负载牵引能力。这种方法适用不同形式的器件,对高频率、宽频带压控振荡器的制作有一定指导意义。     

8 GHz～12 GHz推-推压控振荡器设计

文章介绍了利用推-推的方法实现宽带低相噪压控振荡器,论述了其基本原理和分析方法,并利用计算机辅助设计(CAD)对该方法进行了分析.根据分析结果制作了8 GHz～12 GHz压控振荡器.测试结果表明,分析结果较好地反映了实际结果.推-推的方法能有效提高晶体管的工作频率,同时还可以改善压控振荡器的负载牵引能力.这种方法适用不同形式的器件,对高频率、宽频带压控振荡器的制作有一定指导意义.     

基于CMOS工艺的太赫兹振荡器

在太赫兹频段,无源器件电容电感的品质因数低、电路的寄生参数以及MOS管的截止频率影响使太赫兹振荡器电路难以实现高功率输出。提出一种300 GHz可调谐振荡器,首先,采用改进的交叉耦合双推(Push-Push)振荡器结构,通过输出功率叠加的方法输出二次谐波300 GHz信号,增加了振荡器的输出功率并突破了MOS管截止频率,并通过增加栅极互连电感增加输出功率。其次,太赫兹振荡器摒弃传统片上可变电容调谐的方式,通过调节MOS管衬底电压改变MOS管的栅极寄生电容实现频率调谐,避免太赫兹频段引入低Q值电容,进一步增加了输出功率。提出的太赫兹振荡器采用台积电40 nm CMOS工艺,基波工作频率为154.5 GHz,输出二次谐波为 309.0 GHz,输出功率可达-3.0 dBm,相位噪声为-79.5 dBc/Hz@1 MHz,功耗为28.6 mW,频率调谐范围为303.5~315.4 GHz。     

基于基片集成波导谐振器的压控振荡器设计

设计了一种基于基片集成波导谐振器的X波段压控振荡器。首先分析了串联反馈式振荡器以及基片集成波导谐振器的理论,然后在高频电磁仿真软件ADS中进行仿真和设计,并通过将变容管合理地引入谐振器,实现了电调谐的目的。最终设计完成了一个工作于X波段的基片集成波导压控振荡器。此压控振荡器与传统的介质压控振荡器(DRO)相比,具有稳定性高、平面化以及成本低的优点。由于采用了ADS中的联合仿真功能进行振荡器的设计,仿真结果的准确性得到了提高,减小了实物的调试工作量。测试结果为:工作频率为7 GHz,调谐范围为30 MHz,输出功率≥7 dBm,谐波抑制度≥22 dBc,相位噪声优于-106 dBc/Hz@100 kHz。     

高稳定度C波段压控振荡器设计与实验研究

文章介绍了实用型C波段变容器管调谐耿氏振荡器电路结构和理论计算,给出了实验结果:输出功率40～180mW,机调带宽400～900MHz,电调范围40～160MHz,频率温度系数0.01～0.08MHz/℃,功率温度系数0.009～0.016dB/℃。文章分析了影响振荡器电调特性及频稳度的因素,给出了改善电调特性和提高频稳度的实验方法。实验结果及工程应用表明,振荡器稳定性好,可靠性高,具有实用价值。     

S波段低相噪同轴介质压控振荡器设计

运用串联反馈振荡器理论设计了一个工作于S波段的低相噪同轴介质压控振荡器。首先分析了同轴介质谐振器的理论以及串联反馈振荡器的工作原理,然后在高频电磁仿真软件HFSS和ADS中进行仿真和设计。为了实现电调谐,将变容管合理地加入振荡器,最终设计完成了一个S波段的低相噪同轴介质压控振荡器。通过对实物成品的测量和调试表明,此压控振荡器达到了预定的技术指标,各项性能良好。测试结果:工作频率为2.075~2.250 GHz,调谐范围为1.75 GHz,输出功率≥11 dBm,谐波抑制度≥23 dBc,相位噪声优于-133 dBc/Hz@100kHz。     

高线性度X波段宽带压控耿氏振荡器

本文描述了X波段宽带压控耿氏振荡器的结构和采用并联电抗补偿改善的电调谐特性:在600～800MHz调谐范围内,最小输出功率为30～80mW,功率变化一般为1.5dB,最大和最小电调斜率比典型值不超过1.3,最佳值为1.06。其工程应用表明,该振荡器无需外部线性化电路即能满足整机要求。     

A 21.5/43-GHz dual-frequency balanced Colpitts VCO in SiGe technology

A balanced Colpitts voltage-controlled oscillator (VCO) is designed and fabricated in a commercially available 0.25-/spl mu/m SiGe BiCMOS process. It has the characteristics of the push-push VCO, i.e., the VCO has simultaneously a differential output at a fundamental frequency of 21.5 GHz and a single-ended output at the second harmonic frequency of 43 GHz. A differential tuning technique is applied to reduce the phase noise. The measured phase noise at 1-MHz offset is -113 dBc/Hz at 21.5 GHz and -107 dBc/Hz at 43 GHz. The corresponding output power is about -6 and -17 dBm, respectively, with a 5% tuning range and a 130-mW dc power consumption.     

A low phase noise silicon 18-GHz push-push VCO

The design and measurement of a push-push voltage controlled oscillator (VCO) at 18.66-18.3 GHz are presented in this paper. The circuit includes two packaged silicon transistors (Siemens BFP 540F) and a microstrip resonator tuned by two GaAs varactor diodes (M/A-COM ML46580). A 360-MHz tuning range is obtained with an output power of 0-3.1 dBm. The fundamental rejection is around 17 dB for a wide range of collector bias current. The phase noise is below -103 dBc/Hz at 100-kHz offset and below -122 dBc/Hz at 1 MHz for the entire tuning bandwidth.     

Phase-Noise Reduction of X-Band Push–Push Oscillator With Second-Harmonic Self-Injection Techniques

A low phase-noise X-band push-push oscillator using proposed feedback topology is presented in this paper. The oscillator core was implemented in a 0.18-mum CMOS process. By using a power splitter and a delay path in the feedback loop connecting the output and current source of the oscillator, a part of the oscillator output power injects to the oscillator itself. With the proper phase delay in the feedback loop and high transconductance of the current source, a low phase-noise oscillator is achieved. The amplitude stability and phase stability are analyzed, the phenomena of the phase-noise reductions are derived, and the device-size selections of the oscillator are investigated. The time-variant function, impulse sensitivity function, is also adopted to analyze the phase-noise reductions of the second-harmonic self-injected push-push oscillator. These theories are verified by the experiments. This self-injected push-push oscillator achieves low phase noise of -120.1 dBc/Hz at 1-MHz offset from the 9.6-GHz carrier. The power consumption is 13.8 mW from a 1.0-V supply voltage. The figure-of-merit of the oscillator is -188.3 dBc/Hz. It is also the first attempt to analyze the second-harmonic self-injected push-push oscillator     

A 108-GHz InP-HBT monolithic push-push VCO with low phase noise andwide tuning bandwidth

This paper reports on what is believed to be the highest frequency bipolar voltage-controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) so far reported. The W-band VCO is based on a push-push oscillator topology, which employs InP HBT technology with peak f_T's and f_max's of 75 and 200 GHz, respectively. The W-band VCO produces a maximum oscillating frequency of 108 GHz and delivers an output power of +0.92 dBm into 50 Ω. The VCO also obtains a tuning bandwidth of 2.73 GHz or 2.6% using a monolithic varactor. A phase noise of -88 dBc/Hz and -109 dBc/Hz is achieved at 1- and 10-MHz offsets, respectively, and is believed to be the lowest phase noise reported for a monolithic W-band VCO. The push-push VCO design approach demonstrated in this work enables higher VCO frequency operation, lower noise performance, and smaller size, which is attractive for millimeter-wave frequency source applications     

A Low-Power 114-GHz Push–Push CMOS VCO Using LC Source Degeneration

An LC source-degeneration negative-resistance cell of an LC VCO is investigated, which is capable of operating at millimeter-wave (MMW) range with low dc power consumption. Several negative-resistance cells in LC oscillators are also compared. The LC source-degenerated topology is demonstrated through a 114-GHz push-push fully integrated LC VCO implemented in TSMC 0.13-mum CMOS process. With core power consumption of 8.4 mW, the tuning range at the fundamental port is 56.4-57.6 GHz and at the push-push port is 112.8-115.2 GHz. The measured phase noise at the fundamental port is -13.6 dBc/Hz at 10-MHz offset. This VCO is believed to have the best figure of merit among MMW VCOs using bulk CMOS processes.     

应用于太赫兹源信号实现的宽带四倍频链路设计

由于集成电路工艺截止频率Ft的限制,直接通过振荡器获取的太赫兹信号源具有输出功率低、带宽较窄等问题。针对该问题,提出一种可实现高性能太赫兹源的宽带倍频链路设计。对比了传统push-push技术与改进的跨导增强push-push技术,并提出将跨导增强push-push技术运用到倍频器中,提高了倍频链路的倍频增益;在链路级间采用具有幅度与相位纠正功能的新型有源巴伦结构,进一步提高了倍频器的倍频增益与谐波抑制性能。仿真结果表明,倍频链路可实现带宽为210~256 GHz,饱和输出功率为-0.5 dBm,峰值倍频增益为-0.55 dB的太赫兹信号源,链路的总直流功耗仅为30.6 mW。     

Theoretical verification on the effect of an additional DR in push-push FET DROs

This letter theoretically verifies that a second Dielectric Resonator (DR) placed at the drain port of a push-push FET Dielectric Resonator Oscillator (DRO) can provide compensation for some phase difference/error between the output signals and improve the output power level. The theoretical verification starts from understanding the relationship between output power and phase in a balanced push-push oscillation scheme. The phase compensation causing power improvement is analyzed with an conceptual configuration of the circuit. The effect is confirmed by Advanced Design System (ADS) simulation for the same circuit as that in an earlier experimental report.     

A 17-GHz Push–Push VCO Based on Output Extraction From a Capacitive Common Node in GaInP/GaAs HBT Technology

This paper presents a new push-push voltage-controlled oscillator (VCO) technique that extracts a second harmonic output signal from a capacitive common node in a negative-g_m oscillator topology. The generation of the second harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing: 1) significant voltage clipping and 2) different rise and fall times during the switching operation of the core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region than a conventional push-push technique using an emitter common node. A prototype 17-GHz VCO realized in GaInP/GaAs HBT technology produces an output power of -6dBm and a phase noise of -110.4dBc/Hz at 1-MHz offset, which is equivalent to a VCO figure-of-merit of -184.3dBc/Hz, while drawing 4.38 mA from a 3.0-V supply     

Compact InP-based HBT VCOs with a wide tuning range at W- andD-band

Compact monolithic integrated differential voltage-controlled oscillators (VCOs) operating in W-band were realized using InP-based heterojunction bipolar transistors (HBTs). The oscillators, with a total chip size of 0.6 by 0.35 mm², are based on a balanced Colpitts-type topology with a coplanar transmission-line resonator. By varying the voltage across the base-collector junction of the HBT in the current mirror and by changing the current in the VCO, the oscillation frequency can be tuned between 84 and 106 GHz. At 100 GHz, a differential voltage swing of 400 mV is obtained, which should be sufficient to drive 100 Gb/s digital logic. By combining the balanced outputs of a similar differential VCO in a push-push configuration, a compact source with close to -10 dBm output power and a tuning range between 138 and 150 GHz is obtained