Cu/SiO2逐层沉积增强无杂质空位诱导InGaAsP/InGaAsP量子阱混杂

研究了Cu/SiO_2逐层沉积增强的无杂质空位诱导InGaAsP/InGaAsP多量子阱混杂(QWI)行为。在多量子阱(MQW)外延片表面,采用等离子体增强的化学气相沉积(PECVD)不同厚度的SiO_2,然后溅射5 nm Cu,在不同温度下进行快速热退火(RTA)诱发量子阱混杂。通过光荧光(PL)谱表征样品在QWI前后的变化。实验结果表明,当RTA温度小于700℃时,PL谱峰值波长只有微移,且变化与其他参数关系不大;当RTA温度大于700℃时,PL谱峰值波长移动与介质层厚度和RTA时间都密切相关,当SiO_2厚度为200 nm,退火温度为750℃,时间为200 s时,可获得54.3 nm的最大波长蓝移。该种QWI方法能够诱导InGaAsP MQW带隙移动,QWI效果与InGaAsP MQW中原子互扩散激活能、互扩散原子密度以及在RTA过程中热应力有关。     

组合离子注入导致非对称耦合双量子阱界面混合效应光调制反射光谱

用分子束外延系统 (MBE)生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ,用组合离子注入的方法 ,在同一块衬底上获得了不同注入离子 As+ 、 H+ 和不同注入剂量的 Ga As/ Al Ga As非对称耦合双量子阱单元 ,在未经快速热退火的条件下 ,于常温下测量了光调制反射光谱 ,发现各单元的子带间跃迁能量最大变化范围可达80 me V .     

含磷组分薄膜对InGaAsP/InP多量子阱无序处理的影响

报道了采用不同的电介质薄膜SiO2、SiOxNy、Si3N4和SiOxPyNz及其组合用于InGaAsP/InP多量子阱材料的包封源.在高纯氮气保护下经850℃、7s的快速退火处理,结果发现:含磷组分SiOxPyNz电介质薄膜包封下的InGaAsP/InP量子阱带隙展宽十分显著,高达224meV,PL谱峰值波长蓝移342nm,半宽较窄仅为25nm,说明量子阱性能保持十分良好,并对此现象的成因做了初步分析.     

使用低能离子注入导致的量子阱混杂方法制作可集成的分布式Bragg反射激光器

采用量子阱混杂的方法制作了可集成的分布式Bragg反射激光器.通过同时控制相位区和光栅区的注入电流,该激光器的波长可以准连续地调谐4 .6 nm .在整个调谐范围内,除了少数几个模式跳变点以外,激光器的单模特性保持良好,边模抑制比均达到了30 d B以上     

使用低能离子注入导致的量子阱混杂方法制作可集成的分布式Bragg反射激光器

采用量子阱混杂的方法制作了可集成的分布式Bragg反射激光器.通过同时控制相位区和光栅区的注入电流,该激光器的波长可以准连续地调谐4.6nm.在整个调谐范围内,除了少数几个模式跳变点以外,激光器的单模特性保持良好,边模抑制比均达到了30dB以上.     

低能氦离子注入引入的量子阱混杂带隙波长蓝移

提出了采用低能氦离子注入多量子阱(MQW)材料和合适的快速退火条件,实现了MQW带隙波长的蓝移.用这种材料制作了FP腔激光器,与未注入器件相比,实现了37nm的激射波长蓝移.     

SiO_2膜增强InGaAsP超晶格外延片的量子阱混合

对晶格与 In P匹配的 In Ga As P超晶格结构外延片 ,运用等离子增强化学气相沉积法镀Si O2 膜 ,随后用碘钨灯快速热退火 ,进行无杂质空位扩散 ( IFVD)技术的实验研究 ,测量光致发光谱后得到了最大 50 nm的峰值位置蓝移 ;表明在没有掺杂和没有应变的情况下 ,IFVD仍有较好的处理量子阱材料的能力 .对影响 IFVD工艺的重复性因素进行了探讨 .     

多变量离子注入型量子阱混杂效应

为实现InP基单片集成光电子器件和系统,对InGaAsP/InGaAsP分别限制异质结多量子阱激光器结构展开量子阱混杂(QWI)技术研究。在不同能量P离子注入、不同快速热退火(RTA)条件以及循环退火下,研究了有源区量子阱混杂技术,实验结果采用光致发光(PL)谱进行表征。实验结果表明:在不同变量下皆可获得量子阱混杂效果,其中退火温度影响最为显著,且循环退火可进一步提高量子阱混杂效果;PL谱蓝移随着退火温度、退火时间和注入能量的增大而增大,退火温度对蓝移的影响最大,在注入剂量为1×10^14 ion/cm2,注入能量为600keV,750℃二次退火150s时获得最大蓝移量116nm。研究结果为未来基于QWI技术设计和制备单片集成光电子器件和系统奠定了基础。     

低能氦离子注入引入的量子阱混杂带隙波长蓝移

提出了采用低能氦离子注入多量子阱(MQW)材料和合适的快速退火条件,实现了MQW带隙波长的蓝移.用这种材料制作了FP腔激光器,与未注入器件相比,实现了37nm的激射波长蓝移.     

掺Mn基区InGaAsP/InP双集电区异质光敏晶体管

为了用液相外延法制出高速、高增益异质光敏晶体管,采用了新型的双集电区结构,并且采用Mn作为p型掺杂剂,以代替常用的Zn或Cd制作p~+-n~-集电结.制出的台面型HPT的典型光增益为144;在 80 ps Gaussian光脉冲作用下,其输出脉冲上升时间为 400ps.半峰宽为1.2ns.     

InGaAsP／InP系选择性刻蚀技术

比较了用于ＩｎＧａＡｓＰ／ＩｎＰ系的几种腐蚀液的选择性刻蚀效果并给出了最佳选择性刻蚀条件。     

使用SiO2介质膜实现InGaAsP量子阱混杂

报道了使用SiO2介质膜导致的无杂质空位扩散实现InGaAsP多量子阱混杂的实验,得到200nm的最大带隙波长蓝移.另外,采用量子阱混杂制作了蓝移的FP腔激光器,其性能与未混杂的激光器相当.     

使用SiO_2介质膜实现InGaAsP量子阱混杂

报道了使用SiO2 介质膜导致的无杂质空位扩散实现InGaAsP多量子阱混杂的实验,得到2 0 0nm的最大带隙波长蓝移.另外,采用量子阱混杂制作了蓝移的FP腔激光器,其性能与未混杂的激光器相当     

在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用

从理论上计算了厚度为 110 nm的 W0 .95 Ni0 .0 5 金属薄膜应变条在 In Ga As P/ In P双异质结构中形成的应力场分布 ,及由应力场分布引起的折射率变化 .在 W0 .95 Ni0 .0 5 金属薄膜应变条下半导体中 0 .2— 2μm深度范围内 ,由应变引起条形波导轴中央的介电常数 ε相应增加 2 .3× 10 - 1— 2 .2× 10 - 2 (2 μm应变条宽 )和 1.2× 10 - 1— 4.1× 10 - 2(4μm应变条宽 ) .同时 ,测量了由 W0 .95 Ni0 .0 5 金属薄膜应变条所形成的 In Ga As P/ In P双异质结光弹效应波导结构导波的近场光模分布 .从理论计算和实验结果两方面证实了 In Ga As P/ In P     

InGaAsP/InP双异质结发光管中的深能级

本文用DLTS谱仪研究了SiO2限制的InGaAsP/InP双异质结发光管中的深能级。结果表明:只有在p-n结位于p-InP/n-InGaAsP界面处的个别器件中,有△E=0.24eV的多子陷阱。     

Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE

We investigated the influence of the growth rate on the quality of zero-net-strained InGaAsP/InGaAsP/InP multiquantum well structures for 1.55 μm emission grown by low pressure metalorganic vapor phase epitaxy. The samples consisted of fixed compressive strained wells (ɛ=+1%) and tensile strained barriers (ɛ=−0.5%) grown with different quaternary bandgap wavelengths (λ_B=1.1–1.4 μm). Using higher growth rates, we obtained for the first time high quality zero net strained multi quantum well structures, regardless having constant group V composition in the well and barriers. The samples were analyzed by x-ray diffraction, photoluminescence and atomic force microscopy techniques. The amplitude of surface modulation roughness along [011] direction decreased from 20 nm to 0.53 nm with increasing growth rate and/or quaternary compositions grown outside the miscibility gap. A new deep PL broad emission band strongly correlated with the onset of wavy layer growth is also reported. Broad area and ridge waveguide lasers with 10 wells exhibited low losses (34 cm⁻¹) and low threshold current densities at infinite cavity length (1020 A·cm⁻² and 1190 A·cm⁻², respectively).     

InGaAsP/InP准平面异质结双极晶体管及其与光器件的集成

本文采用计算机辅助分析等方法,讨论了InGaAs/InP异质结双极晶体管(HBT)结构参数与其性能的关系.在此基础上,提出了一种准平面、双集电区HBT,及其相应的制作工艺.初步测试了器件的性能,就其与材料质量的关系作了讨论.文章还提出和制作了一种采用这种HBT为电子器件的光电子集成电路(OEIC).     

Elastic and plastic contributions to X-ray Line broadening of InGaAsP/InP Heterostructures

The coherency state of MOCVD grown InGaAsP/InP double-heterostructure wafers was examined and their effects on the structural properties were determined in this study. Lattice mismatches were measured using {511} asymmetric and (400) symmetric x-ray reflections. The chemical lattice misfit and the elastic strain were also calculated. Misfit dislocations were examined by both x-ray topography and photoluminescence imaging. The x-ray full width at half maximum (FWHM) varied with the degree of mismatch. The largest FWHM was obtained for samples containing the misfit dislocations. It was found that FWHM is influenced not only by the plastic deformation, but also by the elastic strain. To model the dependence of the FWHM, the radius of curvature was measured, and its contribution to the x-ray line broadening was calculated. Also, the contribution from misfit dislocations was taken into account. This model assumes that the dislocations are planar and interact weakly with each other. Good agreement between measured and calculated values was obtained. Thus, it is concluded that the major contribution to x-ray line broadening ofelastically strained sample is the lattice curvature induced by misfit strain, and that the dominant factor affecting x-ray FWHM ofplastically deformed sample is lattice relaxation induced by misfit dislocation.     

A novel processing technique to fabricate planar InGaAsP/InP electroabsorption waveguide modulators

A novel processing technique has been developed to fabricate planar electroabsorption waveguide modulators in compound semiconductor heterostructures. The lateral confinement of light is achieved by introducing controllable, reproducible, and stable stresses into semiconductor heterostructures using WNi surface stressor stripes, which also serve as electrodes for the waveguide modulators. Self-aligned helium implantation is employed to achieve electrical isolation using the Stressors as the templates for the ion masks. An increase as large as 33000 times has been obtained in the dc resistance between the neighboring waveguide modulators 25 μm apart. Propagation loss of 1.7 dB/cm is observed in the photoelastic waveguides at a wavelength of 1.53 μm following the He implantation. A post-implant thermal annealing at 310°C for 40 min increases the dc resistance between the neighboring devices to the maximum value, and at the same time reduces the optical loss to its value before ion implantation (less than 1 dB/cm). Using a combination of the photoelastic effect and helium implantation, planar InGaAsP/InP Franz-Keldysh-effect waveguide modulators 430 μm long with a 10 dB extinction ratio at 3 V for the TM mode have been fabricated. Planar electroabsorption quantum-confined Stark effect waveguide modulators have also been demonstrated. This planar device processing technique may prove valuable in future photonic integrated circuit technology.     

InGaAsP／InP异质结构材料组分及结构的XPS测定

采用Ｘ射线光电子能谱（ＸＰＳ）对ＩｎＧａＡｓＰ／ＩｎＰ异质结构ＭＯＣＶＤ外延晶片作了表面薄层元素、组分定性、定量和深度分布分析。利用ＸＰＳ组分定量数据与带隙和组分量数据与晶体常数的经验公式计算带隙、晶格常数和失配率，并与光压谱（ＰＶＳ）测定的带隙值和Ｘ射线双晶衍射（ＤＣＤ）测定的失配率作了比较，比较结果是满意的。实验和分析表明，在研究ＭＯＣＶＤ外延膜材料表面组分和表面点阵结构方面。