A new gate driver integrated circuit for IGBT devices with advanced protections

The aim of this paper is to discuss new solutions in the design of insulated gate bipolar transistor (IGBT) gate drivers with advanced protections such as two-level turn-on to reduce peak current when turning on the device, two-level turn-off to limit over-voltage when the device is turned off, and an active Miller clamp function that acts against cross conduction phenomena. Afterwards, we describe a new circuit which includes a two-level turn-off driver and an active Miller clamp function. Tests and results for these advanced functions are discussed, with particular emphasis on the influence of an intermediate level in a two-level turn-off driver on overshoot across the IGBT.     

IGBT modules robustness during turn-off commutation

The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high junction temperatures and under different driving conditions is presented. Several devices of different generations, current and voltage ratings have been considered. The experimental characterisation has been performed by means of a non-destructive experimental set-up where IGBT modules are switched in presence of a protection circuit that is able to prevent device failure at the occurrence of any possible instable behaviour. The experimental analysis confirms the very good robustness of high power IGBT modules which can withstand large current overstress well beyond the declared RBSOA limits even at temperatures larger than those one declared by manufacturers. A comparison between IGBT device generation is also presented.     

IGBT dynamics for clamped inductive switching

Clamped inductive switching performance of insulated gate bipolar transistors (IGBTs) have been studied in detail with the aid of extensive measurements and numerical simulations. Internal dynamics of a latch-up free punch-through IGBT during clamped inductive switching is studied using two-dimensional (2-D) mixed device and circuit simulations incorporating the self-heating mechanism. Failure of IGBT during inductive load turn-off is shown to occur due to thermally assisted carrier multiplication at the reverse biased p-base n-drift region junction under the emitter contact     

横向电阻区对IGBT过电流关断能力的影响研究

针对绝缘栅双极晶体管(IGBT)在过电流关断测试中被烧毁的问题,设计了三种不同的横向电阻区结构。为了分析器件的失效机理,研究不同结构横向电阻区对过电流关断能力的影响,借助Sentaurus TCAD仿真工具构建了器件模型,模拟了器件的整个过电流关断过程。对三种结构器件在过电流关断过程中的内部关键物理参量的变化情况进行分析,发现不同长度的横向电阻区对空穴的抽取效率不同,进而可以影响到电流密度分布。当电阻区增加到一定长度时,可以有效提升过电流关断能力,避免器件烧毁失效。     

A new driving circuit for IGBT devices

IGBT devices are increasingly used in power electronic equipment due to their high power handling capability. This paper deals with the problems that concern the turn-on, turn-off, and short-circuit of these devices. An optimal new driving circuit is proposed which gives excellent device output performances. Experimental oscillogram traces of transient condition tests are given, which demonstrate the advantages of using the new driving circuit. The suitability of the driving circuit for integration is analyzed     

一种低功耗4H-SiC IGBT的仿真研究

针对传统沟槽栅4H-SiC IGBT关断时间长且关断能量损耗高的问题,文中利用Silvaco TCAD设计并仿真了一种新型沟槽栅4H-SiC IGBT结构。通过在传统沟槽栅4H-SiC IGBT结构基础上进行改进,在N ⁺缓冲层中引入两组高掺杂浓度P区和N区,提高了N ⁺缓冲层施主浓度,折中了器件正向压降与关断能量损耗。在器件关断过程中,N ⁺缓冲层中处于反向偏置状态的PN结对N ^-漂移区中电场分布起到优化作用,加速了N ^-漂移区中电子抽取,在缩短器件关断时间和降低关断能量损耗的同时提升了击穿电压。Silvaco TCAD仿真结果显示,新型沟槽栅4H-SiC IGBT击穿电压为16 kV,在15 kV的耐压设计指标下,关断能量损耗低至4.63 mJ,相比传统结构降低了40.41%。     

4500V SPT IGBT 动静态损耗优化

本文关注高压IGBT动静态性能的优化。对4500V增强型平面IGBT进行研究,该结构在阴极一侧具有载流子存储层。其中垂直结构采用软穿通(SPT)结构,顶部结构采用增强型平面结构,该结构被称为SPT IGBT,仿真结果显示4500V SPT 具有软关断波形,与SPT结构相比提升了导通压降和关断损耗之间的折衷关系。同时,对不同载流子存储层掺杂浓度对动静态性能的影响也进行了研究,以此来优化SPT IGBT的动静态损耗。     

一种具有部分高介电常数介质调制效应的IGBT

提出了一种具有高介电常数介质填充沟槽的绝缘栅双极晶体管(IGBT).分析了高介电常数介质调制效应.结果表明,与普通场阻型IGBT相比,该器件的击穿电压提高了 8％,通态压降减小了 8％,关断损耗降低了 11％;在相同通态压降下,该器件的关断损耗降低了 35％.在栅极与原HK介质之间增加介电常数更高的介质,进一步提升了该...     

IGBT关断瞬态电压尖峰影响及抑制

绝缘栅双极晶体管(IGBT)是一种性能优良的全控型电力电子器件,由于线路和器件内部分布电感的存在,关断时集电极电流的快速变化会感应产生一个较大的电压尖峰从而引起过电压击穿。分析了栅极结电容放电时间常数和拖尾电流对电压尖峰的影响,通过改变栅极驱动电阻和温度可以抑制电压尖峰。分析了电压尖峰引起过压击穿的失效机理以及失效模式,表明IGBT过压击穿引起失效的本质仍然是结温过高引起的热击穿失效。     

An IGBT DC subcircuit model with non-destructive parameters extraction and comparison with measurements

This paper proposed and optimized an IGBT subcircuit model which is fully spice compatible. Based on analytical equation describing the semiconductor device physics, the model parameters are extracted accurately via measured data without devices destruction. The IGBT n⁻ layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor. The proposed model can be used to accurately predict the IGBT output I–V characteristics, and low current gain etc. The simulation results are verified by comparison with measurement results and found to be in good agreement. The average error is within 8% which is better than previously reported results of semi-mathematical models.     

一种新型高发射效率的阳极短路IGBT

提出了一种新型的双发射短接的阳极短路IGBT结构,该结构有两个空穴放射区和二氧化硅阻挡层。首先,第二发射区可以增加空穴的发射效率同时阻止电子直接流向金属,增加了阳极上的电阻和电压,有效的抑制了负阻效应;另一方面,二氧化硅阻挡层使得大量电子聚集在阳极区附近,进一步降低了导通压降。结果表明：相对于传统NPT IGBT, NPN-IGBT和阳极短路IGBT,导通压降分别降低了10%, 17%, 30%。另外,这种阳极短路结构由于有一个电子通道,在关断过程中可以像阳极短路结构一样抽取过剩载流子,使得其关断时间很短,在同样的导通压降下关断,相对于传统NPT IGBT,NPN-IGBT和阳极短路IGBT,关断损耗分别降低了43.7%, 32%, 28%。这种新结构最终实现了导通压降和关断损耗之间很好的折中。     

A new vertical IGBT structure with a monolithic over-current,over-voltage, and over-temperature sensing and protecting circuit

A new 600 V vertical Insulated Gate Bipolar Transistor (IGBT) structure with monolithically integrated over-current, over-voltage, and over-temperature sensing and protecting functions has been developed to exploit an extremely excellent trade-off characteristic between an on-state voltage drop and turn-off time for the first time. This device can be easily made by the conventional IGBT fabrication process. An accurate and a real-time device temperature detection, as well as a high withstand capability against over-current and over-voltage conditions (short circuit immunity of 30 μsec, clamped collector voltage of 640 V), have been achieved. Furthermore, an excellent trade-off characteristic of 1.40 V as an on-state voltage drop and of 0.18 μsec as a fall time is also obtained     

Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT

For the first time, an insulated gate bipolar transistor with a novel buffer is proposed and verified by two-dimensional (2D) mixed device-circuit simulations. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the buffer layer which is formed by employing a three-step, gradually changing doping n⁺ structure. Compared with the conventional IGBT, the proposed device exhibits better trade-off relation between the conduction and switching losses. The turn-off time is halved from 9.4 μs of the conventional IGBT to 4.5 μs of the proposed device, so the operation speed of the proposed device is greatly improved. Further, the forward blocking voltage is enormously increased from 907 V of the proposed device to 1278 V of the proposed device, which is required for high power operation.     

IGBT过流关断主结边缘烧毁失效机理研究

针对4 500 V IGBT在过流关断过程中主结边缘烧毁失效的问题,设计了3种不同场板连接结构。为了分析失效机理,采用Sentaurus TCAD工具对IGBT的过流关断过程进行仿真,重点研究了主结边缘附近3种场板结构对过流关断的影响。结果表明,IGBT电阻区边缘场板结构参数是影响坚固性的重要因素,在一定程度上减小场板连接的倾斜角,可减弱主结附近电场强度,避免过流关断过程中器件在该处发生烧毁,提升了器件的动态坚固性。     

新型IGBT驱动器原理及其保护功能研究

介绍了一种新型H桥驱动器TX-DA841HD,该电路具有强大的IGBT驱动与保护功能,可以选择四路直接驱动和桥臂互补驱动两种工作模式。电路具有IGBT的短路阈值、保护盲区时间、盲区时间设置等功能,短路保护运用缓降栅压结合软关断技术,软降栅压时间可通过外接电路自由整定。电路本身自带隔离驱动电源。试验证明该电路具有良好的驱动及保护能力。     

Electrothermal simulation of an IGBT PWM inverter

An electrothermal network simulation methodology is used to analyze the behavior of a full-bridge, pulse-width-modulated (PWM), voltage-source inverter, which uses insulated gate bipolar transistors (IGBTs) as the switching devices. The electrothermal simulations are performed using the Saber circuit simulator and include control logic circuitry, IGBT gate drivers, the physics-based IGBT electrothermal model, and thermal network component models for the power-device silicon chips, packages, and heat sinks. It is shown that the thermal response of the silicon chip determines the IGBT temperature rise during the device switching cycle. The thermal response of the device TO247 package and silicon chip determines the device temperature rise during a single phase of the 60-Hz sinusoidal output. Also, the thermal response of the heat sink determines the device temperature rise during the system startup and after load-impedance changes. It is also shown that the full electrothermal analysis is required to accurately describe the power losses and circuit efficiency     

An investigation of the drive circuit requirements for the powerinsulated gate bipolar transistor (IGBT)

The drive circuit requirements of the insulated gate bipolar transistor (IGBT) are explained with the aid of an analytical model. It is shown that nonquasi-static effects limit the influence of the drive circuit on the time rate-of-change of anode voltage. Model results are compared with measured turn-on and turn-off waveforms for different drive, load, and feedback circuits, and for different IGBT base lifetimes     

高性能IGBT模块的设计考虑

本文对ＩＧＢＴ模块中功率芯片（ＩＧＢＴ和续流二极管）的优化设计进行了讨论。通过优化几个重要的工艺参数并改进器件的结构，ＩＧＢＴ不仅有足够的短路容量，而且正向压降与电流下降时间之间可实现最佳折衷。另外，续流二极管的反向恢复特性也有明显改善。通过采用衬底控制技术，ＩＧＢＴ模块的输出特性不受温度的影响，输出电流更稳，输出阻抗更高。本文详细介绍了整个设计考虑。     

一种具有低寿命区的阳极短路4H-SiC IGBT仿真研究

传统沟槽型4H-SiC IGBT中关断损耗较大,导通压降和关断损耗难以折中。针对此问题,文中提出了发射极区域含有低寿命区,同时集电区引入阶梯型集电极的LS-IGBT结构来降低器件的关断损耗。通过同时控制集电区注入的空穴载流子数量和P基区载流子的寿命,在基本维持器件击穿电压的前提下降低器件的关断损耗。使用Silvaco Atlas器件仿真工具对改进结构进行特性仿真分析,并与传统结构进行对比。仿真结果显示,在击穿电压一致的前提下,新结构的关断损耗提升了84.5 %,同时器件的导通压降降低了8.3 %,证明了设计思想的正确性。     

1200V场终止型绝缘栅双极晶体管的ADE物理建模及参数提取

绝缘栅双极晶体管（IGBT）是微电子学研究的热点之一,而相关电路仿真迫切需要该器件的等效模型.本文提出基于傅里叶解双极扩散方程（ADE）的1200V场终止型IGBT物理模型,通过RC电路等效漂移区载流子分布,精确求解双极扩散方程.该模型针对大功率IGBT的工作原理,采用大注入假设条件,在综合分析场终止层的同时,根据1200V场终止型IGBT的特点考虑漂移区载流子的复合效应.在提取器件模型所需的关键参数后,用实际IGBT的测量结果对该模型的仿真结果进行了验证,通过分析静态以及关断瞬态特性曲线,仿真与实验数据误差均值小于8%,证明所建模型及参数提取方法的精确度.