基于协同过滤和室内定位的商品推荐系统

利用物联网新兴技术和无线移动定位技术的优势,设计开发了一款基于室内定位的商品推荐系统,实现从过载的信息中识别出用户感兴趣的商品,借助近场通信技术(NFC)搜集用户数据,借助室内定位技术实时定位用户位置,并根据用户购物的历史数据用协同过滤算法实现商品推荐将结果推送给用户以达到让用户满意的购物体验.     

中兴通讯位置服务系统解决方案

移动定位业务又称为位置业务。是移动通信网所提供的一种增值业务。该业务通过无线定位技术来获得移动台的位置信息(经纬度、移动速度等)。提供给用户本人、移动通信网络或者其它外部实体。实现各种与位置相关的业务应用，如车辆调度、位置查询、小孩监护、位置计费、旅游服务等方面。     

浅谈蜂窝移动系统中的定位技术

随着CDMA技术的应用与发展,蜂窝移动通信系统呈现出迅猛发展的势头。蜂窝网络中各种基于移动台位置的服务,如公共安全服务、基于移动台位置的计费、网络规划与设计、网络QoS和无线资源管理等,无不与准确定位移动台位置有关,使得对蜂窝网络中移动台定位技术的研究日趋活跃。本文综合论述了无线定位技术在第三代移动通信系统中的发展与应用现状,并对影响蜂窝网络无线定位精度的原因进行了详细分析与研究,最后指出了以后的研究方向。     

移动业务新趋势:诺基亚mPosition

移动定位业务是一种根据用户所在位置信息提供的增值业务。在无线世界的“何人、何事、何时和何地”四要素中,最具挑战性的历来就是确定位置信息。加入位置信息后,能够极大地扩展移动业务的应用范围,无论这种移动业务是基于ＳＭＳ还是ＷＡＰ,甚至是基于移动多媒体画板。移动互联网、移动电子商务的发展正迅速改变着人们对定位技术的认识,目前业界人士都在关注定位技术的发展方向。 在移动业务中加入位置信息,不仅能够创建新的应用空间,而且能够提高应用价值：提高使用的安全性、生产力和信息质量。通常,依赖于位置信息的应用程序与…     

移动定位技术及其应用前景

1 移动定位服务简介 移动定位服务是指通过无线终端(如手机、PDA等)和无线网络的配合,确定移动用户的实际位置信息(经纬度坐标数据),从而提供用户所需的与位置和方向相关的增值服务。     

移动通信终端定位技术自主可控发展研究

移动通信终端的位置信息是通信用户的重要隐私信息。尤其在国防通信系统中,位置信息更是涉及到安全性和保密性问题,因此,移动终端定位技术的自主可控性显得更为重要。本文介绍了目前常用的移动终端定位技术,分析了各种技术自主可控性,结合我国现状,对移动终端定位技术的自主可控性提出了发展建议。     

空中移动目标位置测量系统设计

GPS定位技术的出现和不断发展完善,为空中移动目标的实时定位提供了新的技术途径。针对技术指标和应用环境要求,利用差分GPS定位和无线数据传输相结合的方式,实现空中移动目标的位置测量。空中目标采用嵌入式系统实现位置数据的采集、存储与发送;地面移动站利用无线传输链路接收空中目标的位置,并实时显示空中目标相对于自身的空间坐标。实际测试结果表明,相对定位精度在1 m以内,验证了系统设计,为空中移动目标的实时位置测量提供了技术手段。     

LBS在移动新业务中的应用

近几年来,LBS业务的市场规模不断扩大,所应用的领域也越来越广泛。移动定位业务指通过移动运营商的移动通信网络,采用相关定位技术,结合GIS地理信息系统,通过无线终端（手机）,确定移动用户的实际位置信息,以短信、彩信、语音、客户端软件等方式呈现给用户的位置增值服务（Location-based Service,LBS）。     

无线蜂窝系统中移动台定位方法

移动台无线定位方法通常分为基于移动台的定位、基于网络的定位及GPS辅助定位3种类型，移动台的定位过程则包括2步：第一步，根据定位类型，估计相应的定位参数；第二步，根据估计出的定位参数，采用相应定位算法确定移动台的位置。该文分析了3种无线定位类型的优缺点，重点介绍了基于移动台和蜂窝网络的无线定位方法，包括定位参数估计技术和文献中提出的几种主要定位方法，并分析了各种定位方法的性能。     

GpsOne技术助力CDMA1X

无线定位服务正在以其新的吸引力和实用性成为运营商、手机厂商乃至用户的新宠。应用手机无线定位系统，除了能使用户随时了解自己所处的位置，运营商还可以提供紧急呼叫救援、实时移动地图、贵重物品追踪及定位互动娱乐游戏等一系列扩展功能服务，手机正在成为最重要的无线定位服务终端。近期，京瓷推出了国内首款支持GpsOne的手机KZ850，揭开了国内手机市场无线定位服务的序幕。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.