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1.
The effects of the addition of V2O5 on the sintering behavior, microstructure, and microwave dielectric properties of 5Li2O–1Nb2O5–5TiO2 (LNT) ceramics have been investigated. With low-level doping of V2O5 (≤3 wt%), the microstructure of the LNT ceramic changed from a special two-level intergrowth structure into a two-phase composite structure with separate grains. And the sintering temperature of the LNT ceramics could be lowered to around 900°C by adding a small amount of V2O5 without much degradation in microwave dielectric properties. Typically, better microwave dielectric properties of ɛr=41.7, Q × f =7820 GHz, and τ f =45 ppm/°C could be obtained for the 1 wt% V2O5-doped ceramics sintered at 900°C.  相似文献   

2.
The effects of V2O5 addition on the sintering behavior, microstructure, and the microwave dielectric properties of 5Li2O–0.583Nb2O5–3.248TiO2 (LNT) ceramics have been investigated. With addition of low-level doping of V2O5 (≤2 wt%), the sintering temperature of the LNT ceramics could be lowered down to around 920°C due to the liquid phase effect. A secondary phase was observed at the level of 2 wt% V2O5 addition. The addition of V2O5 does not induce much degradation in the microwave dielectric properties but lowers the τf value to near zero. Typically, the excellent microwave dielectric properties of ɛr=21.5, Q × f =32 938 GHz, and τf=6.1 ppm/°C could be obtained for the 1 wt% V2O5-doped sample sintered at 920°C, which is promising for application of the multilayer microwave devices using Ag as an internal electrode.  相似文献   

3.
Additions of 0.1 to 6.0 wt% V2O, to lead zirconate titanate (PZT) ceramics promoted rapid densification below 975°C, thereby eliminating the need for PbO atmosphere control The base PZT, Pb(Zr0.53Ti0.47)O3, was prepared by coprecipitation from mixed oxides and butoxides. The V2O5 was incorporated as a batch addition during the PZT coprecipitation process, as mill additions to the calcined precipitated powder, and to a commercial PZT powder. Densification rates were enhanced by the addition of V2O5 (>98% of theoretical density was obtained in ∼15 min at 960°C by the addition of 0.1 to 1.0 wt% V2O5, compared to 4 h at 1280°C for the base PZT). Dielectric properties and piezoelectric coefficients varied slightly within the optimum range of 0.25 to 1.0 wt% V2O5 addition but were at least comparable to the base PZT. Indications are that V2O5 becomes incorporated into the surface layers of the oxide powders during mixing (or in the coprecipitation process) and that the accelerated densification is due to enhanced surface activation and liquid-phase sintering.  相似文献   

4.
The magnetic properties and microstructures of the vanadium phosphate glass system over the composition range 60 to 90 mol% V2O5 were investigated to study magnetic ordering in the glass and the effect of microstructure on its magnetic properties. Direct antiferromagnetic coupling between V4+ ions in the glassy matrix exists, and a transition temperature near - 70°C was observed. As-cast glasses with high V2O5 concentrations separated into two glassy phases; this separation increased the ESR line width as a result of inhomogeneity broadening. The separation, which concentrated the vanadium ions in a vanadium-rich phase, caused a hysteresis in the plot of ESR line intensity vs temperature at the transition temperature. Reduction of the vanadium ions by dextrose added to the melt enhanced phase separation and resulted in weak antiferromagnetic transitions at +70° and -120°C, the Neel temperatures of VO2 and V2O3, respectively.  相似文献   

5.
Crystallization of V2O3 from V2O3P2O3, glasses containing 0 to 9 mol% B2O3, during heat treatment in the range 220° to 410°C, caused progressive micro structural changes which dramatically affected the electronic conductivity (γ), the activation energy for conduction ( W ), and the resistance to chemical attack. All compositions were ≊83% crystalline after heating to 410°C. As a result, the values of γ and W were almost identical to those observed for pure polycrystalline V2O5.  相似文献   

6.
The dc conductivities (α) of PbO-P2O5-V2O5 glasses containing up to 80 mol% V2O5 were measured at T = 100°C to T = 10°C below the glass transition temperature. Dielectric constants at 1 MHz, densities, and the fraction of reduced V ion were measured at room temperature. The conduction mechanism of glasses containing >10 mol% V2O5 was considered to be small-polaron hopping, as previously reported for other vanadate glasses. The temperature dependence of α was exponential, with α= (αo/ T ) exp(− W/kT ). When the V2O5 content was ≥50 mol%, W decreased and α increased with increasing V2O5 content, and the adiabatic approximation could be applied. In the composition range between 10 and 50 mol% V2O5, α increased with increasing V2O5 content, but W varied little. In this region, the hopping conduction was characterized as nonadiabatic. The effect of dielectric constants and V ion spacing on W is discussed.  相似文献   

7.
The effects of the oxide additives MnO2, Co3O4, and Sb2O3, commonly incorporated in commercial Bi2O3-doped ZnO varistors, on the current–voltage characteristics and microstructure of 0.25 mol% V2O5-doped ZnO varistors have been studied. MnO2 is the most significant additive in terms of its effects on varistor performance. Varistor performance can also be improved by increasing the V2O5 content to 0.5 mol% in a ZnO ceramic containing 1 mol% MnO2. Further increases in the V2O5 content of 1 mol% MnO2-doped material cause a deterioration in varistor behavior. The microstructure of the samples consists mainly of ZnO grains with zinc vanadates as the minority secondary phases. Additional spinel phase is formed when Sb2O3 is incorporated.  相似文献   

8.
β-spodumene glass–ceramics with a whisker-like microstructure were prepared from the following materials (in wt%): 64.5 SiO2, 18.0 Al2O3, 4.2 Li2O, 4 ZrO2, and 8 MgF2. Scanning electron microscope (SEM) analysis showed that phase separation in the base glass leads to the formation of a primary crystal phase of MgF2 that promotes the formation of spherical β-spodumene. Whisker spodumene crystals surrounded by spherical crystals are observed at 720°C after 1 h, and the whisker crystals grow at the cost of spherical crystals with increasing temperature and time. The flexural strengths of the glass–ceramics reach a maximum of 228 MPa after heat treatment at 850°C for 1 h.  相似文献   

9.
The effect of the addition of V2O5 on the structure, sintering and dielectric properties of M -phase (Li1+ x − y Nb1− x −3 y Ti x +4 y )O3 ceramics has been investigated. Homogeneous substitution of V5+ for Nb5+ was obtained in LiNb0.6(1− x )V0.6 x Ti0.5O3 for x ≤ 0.02. The addition of V2O5 led to a large reduction in the sintering temperature and samples with x = 0.02 could be fully densified at 900°C. The substitution of vanadia had a relatively minor adverse effect on the microwave dielectric properties of the M -phase system and the x = 0.02 ceramics had [alt epsilon]r= 66, Q × f = 3800 at 5.6 GHz, and τf= 11 ppm/°C. Preliminary investigations suggest that silver metallization does not diffuse into the V2O5-doped M -phase ceramics at 900°C, making these materials potential candidates for low-temperature cofired ceramic (LTCC) applications.  相似文献   

10.
Dielectric properties of glass–ceramics containing barium/lead-based sodium niobates and barium titanate-based silicates were evaluated for capacitor applications. The glasses were formed by melt-rolling the respective constituents which were then crystallized by reheating them at higher temperatures. Crystallization schedules were formulated based on differential thermal analysis results. X-ray diffractometer patterns indicated that the samples were highly crystallized. Microstructure and microchemistry of samples were studied by transmission electron micropscopy. Perovskite, tungsten–bronze and fresnoite phases developed during crystallization have a strong effect on the resulted dielectric properties with permittivities ranging from 20 to 700. Resistivity measurements were done to study conduction mechanisms in samples and the resistivity values for glass–ceramics were found to be between 1011 and 1013Ω·cm at 150°C. MnO2 additions were made to improve the electrical resistivity of glass–ceramics.  相似文献   

11.
The microstructures and dielectric properties of barium strontium titanate glass–ceramics are closely related to the AlF3 and MnO2 additions. The grain morphology was changed by adding AlF3, while the dielectric loss was decreased significantly by adding MnO2. At the same time the breakdown strength (BDS) was improved by doping 4 mol% AlF3 and 1 mol% MnO2 with the glass–ceramics. The present investigation resulted in the development of glass–ceramic compositions with high dielectric BDS and low dielectric loss for high energy density capacitor applications.  相似文献   

12.
Structure and Mechanism of Conduction of Semiconductor Glasses   总被引:2,自引:0,他引:2  
The area of glass formation in the system GeO2-P4O10-V2O5 and the properties of the glasses in this area were determined. The glasses displayed electronic conduction at room temperature (25°C). Resistivity ranged from 500 ohm-cm to 109 ohm-cm at 25°C. Some of the glasses had unusual negative temperature coefficients of resistance of the order of -760,000 ppm °C−1 in the range 25° to -55°C. Volt-ampere characteristics indicated nonlinearity suitable for thermistor application. Other unusual properties included high refractive indices from 1.6 to >2.0 and dielectric constants from 6 to 33 at 1 Mc and 25°C. Values of loss-tangents, however, were high. Infrared spectra indicated that the V5+ ion existed in sixfold coordination in the glassy state as well as in the devitrified crystalline state. The normal vibrational frequency of the V–O bond at 1015 cm−1 was observed for all glasses in the system. Property versus composition curves indicated that density, refractive index, and dielectric constant of ternary glasses in the system do not obey the additivity rule. The density versus mole % V2O5 curve goes through a minimum. Derived quantities from experimental data indicate pronounced influence of V2O5 on oxygen packing in the system. Addition of SiO2, even in small quantities, destroys glass formation. The structure of these glasses, which differs from that of silicate glasses, is discussed. A mechanism of conduction is suggested, based on evidence from magnetic susceptibility, chemical analysis, activation energy, and infrared spectra.  相似文献   

13.
The dc conductivities (σ) of V2O5-P2O5 glasses containing up to 30 mol% TiO2 were measured at T=100° to ∼10°C below the glass-transition temperature. Dielectric constants from 30 to 106 Hz, densities, and the fraction of reduced V ion were measured at room temperature. The conduction mechanism was considered to be small polaron hopping between V ions, as previously reported for V2O5-P2O5 glass. The temperature dependence of σ was exponential with σ = σ0 exp(-W/kT ) in the high-temperature range. When part of the P2O5 was replaced by TiO2,σ increased and W decreased. The hopping energy depended on the reciprocal dielectric constant which, in this case, increased with increasing TiO2 content.  相似文献   

14.
Hard piezoelectrics with high dielectric and piezoelectric constants are used for high-power applications. However, the sintering temperature of these ceramics is high, around 1200°C, restricting the usage of cheap base metal electrodes in fabrication of multi-layer components. This study investigates the effect of CuO and ZnO on the sintering temperature of a hard piezoelectric, APC 841, which is a MnO2- and Nb2O5-modified PZT. The addition of CuO decreased the sintering temperature through the formation of a liquid phase. However, the piezoelectric properties of the CuO-added ceramics sintered at ≤950°C were lower than the desired values. The addition of ZnO resulted in a significant improvement in the piezoelectric properties. This enhancement was attributed to the formation of a homogeneous microstructure with large grains. The APC 841+0.2 wt% CuO+1.1 wt% ZnO ceramics sintered at 950°C showed excellent piezoelectric and dielectric properties with values of k p=0.532, Q m=750, d 33=351 pC/N, ɛ33o=1337, and T c=280°C.  相似文献   

15.
Glass samples with nominal compositions SrFe12O19+(12− n )SrB2O4+nSrSiO3, n =3, 6, 9 were prepared by rapid quenching of the melt. Processes of glass devitrification were studied. The samples were annealed at temperatures of 600–900°C, and the resulting glass–ceramics was characterized by XRD, SEM, EDX, and magnetic measurements. SrFe12O19 crystallizes above 700°C and forms nano- and submicron platelet particles with the aspect ratio depending on the thermal treatment conditions. The glass–ceramic samples annealed at 900°C show coercive force values in the range of 422–455 kA/m.  相似文献   

16.
It was found that the IR absorption bands appearing at 600 to 1600 cm−1, which had been previously assigned to the fundamental vibrations of [BiO3] or [BiO6] polyhedra, are due to residual carbonate ions (CO2−3) dissolved in Bi-Sr-Ca-Cu-O glasses. The concentrations of the remaining CO2−3 in the Bi2.2Sr2Ca1Cu2O x glasses that melted at 1100° and 1400°C are 170 × 10−5 mol/cm3 (3.3 mol%) and 3.2 × 10−5 mol/cm3 (0.25 mol%), respectively. The apparent activation energy for the dissociation of the carbonates was approximately 220 kJ/mol. The CO2−3 content in the precursor glasses did not significantly affect the superconducting properties of the resulting glass–ceramics.  相似文献   

17.
A solid electrolyte electrochemical cell of the type Pt|Ni:NiO a =1∥ZrO2+7.5% CaO∥Ni:NiO a <1+glass|Pt was used to measure the activities of NiO in sodium disilicate glass from 750° to 1100°C. The data indicate a solubility varying from 11 mol% (5.0 wt%) at 800° to 20 mol% (9.3 wt%) at 1100°C. From the variation in NiO activity, the activity of sodium disilicate in glass solution was estimated; from these combined data partial molar free energies and entropies of solution of NiO and Na2Si2O5 and free energies and entropies of mixing were calculated. A partial phase diagram for the system NiO-Na2Si2O5 proposed from solubility data indicates a eutectic at ∼12 mol% (5.3 wt%) NiO at 830°C.  相似文献   

18.
A series of La2O3–HfO2–SiO2 glasses, approximately along the join 0.73SiO2–0.27( x HfO2–(1− x )La2O3), 0< x <0.3), was prepared using containerless processing techniques (aerodynamic levitation combined with laser heating in oxygen). The enthalpy of formation and enthalpy of vitrification at 25°C were obtained from drop solution calorimetry of these glasses and appropriate crystalline compounds in a molten lead borate (2PbO–B2O3) solvent at 702°C. The enthalpy of formation from crystalline oxides was exothermic and became less exothermic with increasing HfO2 content. Heat contents were measured by transposed temperature drop calorimetry and depended linearly on the HfO2 content. Differential scanning calorimetry showed that both the onset glass transition and the onset crystallization temperature of these glasses increased with increasing HfO2 content. Upon slow cooling in air, the glasses crystallized to a mixture of baddeleyite, cristobalite, lanthanum disilicate, and hafnon.  相似文献   

19.
In order to improve the hot corrosion resistance of yttria-stabilized zirconia (YSZ), an Al2O3 overlay has been deposited on the surface of YSZ by electron-beam physical vapor deposition. Hot corrosion tests have been performed on the YSZ coatings with and without an Al2O3 overlay in the molten salt mixture (Na2SO4+0–15 wt% V2O5) at 950°C. The presence of V2O5 in the molten salt exacerbates degradation of both the monolithic YSZ coating and the composite YSZ/Al2O3 system. The formation of a low-melting Na2O–V2O5–Al2O3 liquid phase is responsible for degradation of the Al2O3 overlay. The Al2O3 overlay acts as a barrier against the infiltration of the molten salt into the YSZ coating during exposure to the molten salt mixture with <5 wt% vanadate.  相似文献   

20.
Compound formation in the system Ta2O5–V2O5 has been studied using amorphous materials prepared by the simultaneous hydrolysis of tantalum and vanadyl alkoxides. Three compounds exist in this system: 9Ta2O5· V2O5, 9Ta2O5·2V2O5, and Ta2O5·V2O5 (TaVO5). Solid solutions of δ-Ta2O5 are formed at low temperatures up to 10 mol% V2O5. They transform to β-Ta2O5 solid solutions at higher temperatures; the transformation temperature falls with increasing V2O5 A new compound, 9Ta2O5·V2O5, 670° to 755°. It has an orthorhombic unit cell with a = 0.7859 nm, b = 1.733 nm, and c = 1.766 nm. Orthorhombic TaVO5 crystallized at 535° to 560° decomposes into 9Ta2O5°V2O5 at 1010°.  相似文献   

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