硅基量子点器件

硅基量子点器件由于其独特的性能以及和硅集成电路相容的特点成为研究的重点。量子点中电子和空穴强的量子限制作用使其表现出一些新颖的物理性能,从而在微电子和光电子器件方面有着重要的应用价值。本文介绍了硅基量子点器件的一些应用,包括单电子晶体管、红外探测器、发光二极管。     

半导体量子点的器件应用

半导体量子点的生长和性质已成为当今研究的热点。以Ｓ－Ｋ生长模式已成功地生长了无缺陷的半导体量子点。由于其较强的量子效应,量子点结构的光电器件和电子器件有望比量子阱结构的器件具有更好的性能。介绍了量子点在光电器件中的一些应用,包括单电子晶体管、激光器和红外探测器等。     

军用光电子器件的标准化

简述光电子技术在军事应用中的作用和地位，介绍了国内军用光电子器标准化现状，并对今后工作开展提出若干建议。     

光电子器件的发展

本文分别对光电子学有源器件、无源器件、控制器件及光电子集成器件等进行了评述,并且着重指出,光电子器件是发展光电子学及其应用的重要基础。     

量子点激光器研究进展综述

本文综述了量子点激光器的研究进展。介绍了量子点激光器的结构原理、生长及其优化；对量子点激光器光电特性从实验和建立模型进行描述；给出以速率方程描述的量子点激光器的动态特性如光增益均匀展宽、激射光谱控制、激发态迁移等；最后展望了量子点激光器的研究方向。     

量子点结构垂直辐射器件

最近几年自组织多量子点半导体异质结构研究的重大进展不仅推进了它的基本物理性质研究，也促进了半导体光辐射源的实际应用。一个有意义的研究方向是使用多量子点作为微光学谐振腔的发光二极管和垂直腔面发射激光器的激活层。这种器件的主要优点是输出辐射发射角窄、波长的温度稳定性好和制造测试的组合工艺性稳定。虽然850nm和980nm波段微谐振腔发光二极管和垂直腔面发射激光器工艺发展顺利，但制造1.3mm和1.55mm波段实用的类似器件却要解决一系列原则问题[1]。垂直谐振腔器件的腔镜使用分布布拉格反射器，它由两种不同折射率的交替层（每…     

半导体光电子器件的研究进展

文章综述ＣＬＥＯ’９４及ＩＱＥＣ’９４会议报道的有关光电子器件的发展状况，叙述了大功率ＬＤ、蓝绿光ＬＤ、垂直腔面发射半导体激光器、可调谐ＬＤ及ＯＥＩＣ的最新研究进展。     

纳米光电子器件的最新进展及发展趋势

纳米技术和光电子技术是一门新兴的技术，近年来，越来越受到世界各国的重视。本文主要介绍纳米光电子学的基本概念，发展模式，纳米光电子器件的最新进展和发展趋势。     

超宽带光电子芯片技术研究北大核心

超宽带光电子芯片是下一代无线通信、先进电子信息装备中光纤传输与信号处理的关键元器件,芯片中光子、电子、电磁场之间的相互作用是决定芯片性能的核心因素。文章通过介绍超宽带光电探测器芯片、电光调制器芯片等方面的研究进展,分享课题组在破解上述核心科学问题、提高芯片性能的关键技术方案。     

AIN膜及其在半导体光电器件中的应用

本文报道溅射AlN膜及其应用于半导体光电器件的实验研究结果。测定了不同条件下溅射的AlN膜厚度、淀积速率、折射率和击穿电场强度。首次用AlN膜做器件的端面保护和减反射膜以及表面钝化膜均获得成功。几种常用介质膜的实验数据对比分析表明AlN膜在半导体光电器件领域将有广阔应用前景。     

Progress of Si-based Optoelectronic Devices

Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si - based optoelectronic devices and integrated circuits can be achieved, it will lead to a new irtformational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si- based optoelectronic devices, such as light- emitting diodes, optical waveguides devices, Si photonic bandgap crystals, and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.     

测量噪声功率谱作为筛选光电耦合器件的方法研究（Ⅱ）

在文献「１」中作者曾提出用测量光电耦合器件噪声功能率谱的方法,筛选光电耦合器件。此 根据低频噪声的幅值。但在实验中发现,由于１／ｆ、ｇ－ｒ和爆裂噪声三者之间相关性较弱,在剔除掉１／ｆ噪声值较大的器件后,ｇ－ｒ噪声和爆裂噪声较大的器件却可能未被易除。     

Carbon and Graphene Quantum Dots for Optoelectronic and Energy Devices: A Review

As new members of carbon material family, carbon and graphene quantum dots (CDs, GQDs) have attracted tremendous attentions for their potentials for biological, optoelectronic, and energy related applications. Among these applications, bio‐imaging has been intensively studied, but optoelectronic and energy devices are rapidly rising. In this Feature Article, recent exciting progresses on CD‐ and GQD‐based optoelectronic and energy devices, such as light emitting diodes (LEDs), solar cells (SCs), photodetctors (PDs), photocatalysis, batteries, and supercapacitors are highlighted. The recent understanding on their microstructure and optical properties are briefly introduced in the first part. Some important progresses on optoelectronic and energy devices are then addressed as the main part of this Feature Article. Finally, a brief outlook is given, pointing out that CDs and GQDs could play more important roles in communication‐ and energy‐functional devices in the near future.     

ICP刻蚀技术及其在光电子器件制作中的应用

简单介绍了ICP(inductively coupled plasma)刻蚀设备的结构和刻蚀机理，报道了ICP刻蚀硅、二氧化硅和Ⅲ—Ⅴ族材料的一些最新进展，重点介绍ICP刻蚀技术在光电子器件制作方面的进展和应用前景。     

噪声测量作为筛选光电耦合器件的一种方法

本文针对目前用于光电耦合器件筛选方法的不足，提出了用测量耦合器件噪声功率谱的方法来筛选掉噪声值大的器件，给出一批光电耦合器件的测量统计结果及在不同工作点时的噪声功率谱，并给出相应的筛选标准，实验结果表明，这种方法是有效、可行的。     

Advanced Optoelectronic Devices for Neuromorphic Analog Based on Low-Dimensional Semiconductors

Neuromorphic systems can parallelize the perception and computation of information, making it possible to break through the von Neumann bottleneck. Neuromorphic engineering has been developed over a long period of time based on Hebbian learning rules. The optoelectronic neuromorphic analog device combines the advantages of electricity and optics, and can simulate the biological visual system, which has a very strong development potential. Low-dimensional materials play a very important role in the field of optoelectronic neuromorphic devices due to their flexible bandgap tuning mechanism and strong light-matter coupling efficiency. This review introduces the basic synaptic plasticity of neuromorphic devices. According to the different number of terminals, two-terminal neuromorphic memristors, three-terminal neuromorphic transistors and artificial visual system are introduced from the aspects of the action mechanism and device structure. Finally, the development prospect of optoelectronic neuromorphic analog devices based on low-dimensional materials is prospected.     

硅基集成光电子器件的新进展

综述了硅基微纳激光器、调制器、探测器及光传输控制器件的最新研究进展.重点阐述了表面等离子体、量子阱、光子晶体及纳米光栅等新型结构在提高器件综合性能和降低器件尺寸方面的重大作用.同时,还展示了用标准互补金属氧化物半导体(CMOS)技术,实现硅基光子器件和电子器件在同一基片上微纳集成的巨大前景.