CNN混沌扩频通信系统的性能研究

本文把细胞神经网络（CNN）理论应用于混沌扩频通信系统（CSSS），研究了细胞神经网络实现脉冲式混沌同步的可行性，指出能否同步与同步脉冲的能量有关，而且用CNN产生了性能优良的二值和多值随机码，并对系统的抗多址和多径干扰的性能进行了研究。通信系统的仿真实验表明，CNN能够很好地应用于扩频通信系统。     

基于隐蔽信道的混沌直扩跳码通信

为了提高传统直扩通信系统的抗截获性能，本文提出了一种将混沌直接序列扩频和跳码通信相结合的通信体制，重点介绍系统的同步过程。具体实现时，利用一个通过二次扩频方式复接在业务信道上的低速隐蔽信道实现混沌序列的同步以及通信过程中扩频码的变换。由于采用了周期性长、伪随机性好的混沌序列作为扩频码，而且通信过程中可以对混沌系统的混沌映射关系及初始条件进行随机更新，因此与传统的直接序列扩频通信相比，混沌直扩跳码通信具有更好的抗截获性能。     

基于混沌的扩频通信

扩频通信由于具有良好的保密性和抗干扰的能力，在现代通信系统中得到了广泛的应用。而以混沌为基础的调制技术在近年也得到了广泛的研究。文中在分析了扩频通信的基础上，引入了基于混沌的扩频通信系统的原理和方框图。对混沌系统和传统的数字通信系统进行了比较和仿真。     

浅析混沌扩频通信技术研究及其应用

运用混沌信号类随机的性质达到通信扩频的效果,是混沌在通信领域的一个重要应用形式。现阶段,这一应用形式已经得到了越来越多的重视,其对我国通信技术的革新发展具有非常重要的实际作用,有利于实现现代通信行业的可持续发展。文章主要研究混沌扩频通信技术及其应用。     

时空混沌流扩频

针对计算机网络中的保密通信，充分利用时空混沌序列复杂度高、伪随机性好的特点，将时空混沌直接扩频通信与流密码技术相结合，提出时空混沌流扩频通信方案。以单向耦合映象格子时空混沌系统模型为基础，采用驱动-响应同步方法达到时空混沌同步，使用长周期的时空混沌二值序列作为会话密钥对明文信息进行扩频(加／解密)。这种通信方式具有很高的安全性。     

一种超混沌PN序列的设计与实现

为了产生性能良好的伪噪声（PN）序列,基于一个新的超混沌系统,文中提出了一种超混沌PN序列的设计与实现方法,在对连续超混沌系统离散、量化的基础上,利用FPGA芯片实现了这种超混沌PN序列。通过一个串口通信模块电路采集了输出序列的全部样本并进行了序列性能分析,分析表明这种超混沌PN序列具有优良的随机特性和自相关特性,可用于扩频通信和信息加密之中。     

混沌神经网络及其在保密通信中的应用

具有高度复杂非线性动力学特性的混沌神经网络系统已成为近年来进行加密通信应用研究的热点课题。本文首先概括了混沌神经网络的一些主要理论模型及其非性动力学系统的特点和复杂性，并分析人们如何利用混沌神经网络的系统的这些复杂非线性特点，如混沌同步和混沌吸引子等，进行加密通信的基本算法原理，最后总结有关混沌神经网络及其加密通信应用中所需要进一步研究的一些课题。     

用细胞神经网络超混沌同步系统实现保密通信

本文提出了一种基于细胞神经网络超混沌同步系统的双通道保密通信系统。用降维观测器思想实现了四阶细胞神经网络超混沌系统的高精度同步，并将其用于双通道混沌保密通信：一个通道传送与信息信号无关的混沌系统的输出信号实现高精度同步，另一个通道传送用混沌信号加密的信息信号。由于同步和加密信号分开传送并且采用了超混沌系统，所设计的保密通信系统具有更高的保密性。     

一种应用粒子滤波器实现混沌通信的方法

该文研究应用粒子滤波器实现混沌通信的问题。组合信号建模技术,提出了一种基于粒子滤波器的实现方法。在发送端,采用加性混沌掩盖或乘性混沌掩盖将信息符号调制在混沌信号上;在接收端,应用粒子滤波器估计信息符号,进而实现混沌通信。仿真结果表明,当信息符号为二进制编码和M进制编码时,基于两种混沌掩盖的通信方案,粒子滤波器均能较好地从噪声混沌信号中恢复信息的编码值;与无先导卡尔曼滤波器相比,前者具有较低的误码率。此外,对比两种混沌通信方案,基于粒子滤波器的加性混沌掩盖通信系统在较高的Eb/N0下的通信性能接近BPSK,具有较低的误码率。     

混沌CDMA用于红外无线通信的原理与设计

提出了基于一类新型混沌映射的ＣＤＭＡ扩频通信的原理方案,它可产生满足扩频码要求的一系列混沌二进制序列,理论预测和数值模拟实验吻合得较好,对多用户同时通信的计算机仿真实验取得成功,并克服了其它混沌扩频通信方案的一些缺陷     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.