ITO作为电流扩展层的AlGaInP 发光二极管可靠性研究

Three aging experiments were performed for AlGaInP light emitting diodes（LED） with or without indium tin oxide（ITO）,which is used as a current spreading layer.It was found that the voltage of the LED with an ITO film increased at a high current stressing,while there was little change for that of the LED without the ITO.The results of the LEDs with different thicknesses of the ITO film show that the LED with a thicker ITO has a higher reliability.The main reason for the voltage increase of the LED with the ITO film might be the current crowding in the ITO film around the P-type electrode.     

Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates.The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode,together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer.When operated at 350 mA,the via-TF-LED gave an enhanced blue LOP by 7.8％ and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED).After covering with yellow phosphor that converts some blue photons into yellow light,the via-TF-LED emitted an enhanced white luminous flux by 13.5％ and over 5 times,as compared with the white TF-LED and the white LS-LED,respectively.The significant LOP improvement of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.     

ICP dry etching ITO to improve the performance of GaN-based LEDs

In order to improve the light efficiency of the conventional GaN-based light-emitting diodes(LEDs), the indium tin oxide(ITO) film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface.There is a big problem with the ITO thin film’s corrosion during the electrode preparation.In this paper,at least,the edge of the ITO film was lateral corroded 3.5μm width,i.e.6.43%—1/3 of ITO film’s area. An optimized simple process,i.e.inductively couple plasma(ICP),was introduced to solve this problem.The ICP process not only prevented the ITO film from lateral corrosion,but also improved the LED’s light intensity and device performance.The edge of the ITO film by ICP dry etching is steep,and the areas of ITO film are whole. Compared with the chip by wet etching,the areas of light emission increase by 6.43%at least and the chip’s lop values increase by 45.9%at most.     

Charicteristic of a novel optoelectronic polymer and related device fabrication

In this paper a preliminary investigation of a novel optoelectronic polymer, poly (p-phenylene N-4-n-butylphenyl-N,N-bis- 4-vinylenephenylamine) (PNB), is reported. A single layer structure of ITO/PNB/Al was prepared via spin-coating of PNB solution as a thin film on the top of an ITO substrate, while aluminum top electrode was vacuum evaporated. Dark current- voltage characteristics of this device showed a typical rectifying behaviour. Photovoltaic response under a monochromatic illumination at 420 nm was observed, with an open circuit voltage of 0.3 V and fill factor of 0.21. Spectral response and optical absorption were found to be matched well. It was also discovered that the device showed a green electroluminescent emission at a forward bias. Turn-on voltage of the device was about 6 V and light output about 22.6 nW at a forward bias of 10 V. The work demonstrated that the PNB material might possess dual exciton sites resulting in a competition for excitons to be either separated or recombined. Both effects were associated with each other, which limited the photovoltaic or electroluminescence to some degrees.     

A Novel Approach to Practical Matrix Converter Motor Drive System With Reverse Blocking IGBT （To continue）

4.1 Mapping of reference space vector of proposed inverter to reference space vector of conventional three-level inverter The voltage space phasor locations of the proposed three level inverter with common-mode elimination （Fig. 6） are compared with the space vector locations of a conventional threelevel inverter with DC link voltage of Vdc, as shown in the Fig. 8. Consider a reference space vector OY＇at a sampling instant at an angle a with respect to A phase axis. The reference space vector can be realized by switching appropriate vectors from inverter A and inverter B. From Fig. 8, it can be noted that the triangular sectors for the proposed three-level inverter structure are leading by an angle 30°, with respect to the respective triangular sectors of the conventional threelevel inverter structure （Fig. 8a）. The length of side of the triangular sector of the proposed three-level structure （with a 15% voltage boost in the DC link） is equal to that of the triangular sector of a conventional three-level inverter. Therefore, the corresponding space vectors （forming a triangular sector） of the proposed inverter, are leading with respect to those of the conventional system by an angle 301 （Fig. 8）. For example OA＇ is leading OA by 30°. Therefore we can obtain the reference space vector of the conventional system from the reference space vector of the proposed inverter system as follows：     

Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors

We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal-oxide-semiconductor capacitors during atomic layer deposition(ALD) and annealing of HfO₂ using the tetrakis(ethylmethyl) amino hafnium precursor. The leakage current decreases with the increase of the ALD temperature and the lowest current is obtained at 300℃ as a result of the Frenkel-Poole conduction induced leakage current being greatly weakened by the reduction of interfacial oxides at the higher temperature. Post deposition annealing(PDA) at 500℃ after ALD at 300℃ leads to the lowest leakage current compared with other annealing temperatures. A pronounced reduction in As oxides during PDA at 500℃ has been observed using X-ray photoelectron spectroscopy at the interface resulting in a proportional increase in Ga₂O₃. The increment of Ga₂O₃ after PDA depends on the amount of residual As oxides after ALD. Thus, the ALD temperature plays an important role in determining the high-k/GaAs interface condition. Meanwhile, an optimum PDA temperature is essential for obtaining good dielectric properties.     

AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky gate HEMTs, the SAG p-GaN gate HEMTs show more positive threshold voltage (V_th) and better gate control ability. The influence of Cp₂Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied. With the increasing Cp₂Mg from 0.16 μmol/min to 0.20 μmol/min, the V_th raises from -67 V to -37 V. The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm. The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage.     

CuPc/C60 heterojunction thin film optoelectronic devices

The optoelectronic properties of heterojunction thin film device with ITO/CuPc/C60/Al structure have been investigated through analyzing their current–voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device CuPc acts as an optically active layer, C60 as the electron–transporting layer and ITO and Al as electrodes. It is observed that under illumination, the excitons are formed, which subsequently drift towards the interface with C60, where an internal electric field is present. The excitons that reach to the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at electrode–organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons.     

Long-term aging study on the solid-state reaction between 58Bi42Sn solder and Ni substrate

The reaction between Ni and eutectic BiSn solder at 85°C, 100°C, 120°C, and 135°C was studied. Reaction times ranging from 25 h to 3600 h were used. Only Ni₃Sn₄ was detected as a result of the reaction. None of the other Ni-Sn intermetallic compounds and none of the Ni-Bi intermetallic compounds were observed. The growth of Ni₃Sn₄ followed diffusion-controlled kinetics and was very slow, with the layer thickness reaching only 16 μm after 3600 h of aging at 135°C. The eutectic BiSn microstructure coarsened very quickly. Substantial coarsening can be observed at 135°C for only 200 h of aging. In addition, fine Bi-rich particles within the Sn-rich phase of the solder were found. The amount of these fine Bi-rich particles increased with the aging temperature. It is believed that the formation of these fine Bi-rich particles is due to the fact that the Sn-rich phase can dissolve substantial amounts of Bi. It was also found that, as aging time increased, the region immediately adjacent to the Ni₃Sn₄ layer was preferentially occupied by the Bi-rich phase. This is because Sn in that region had reacted with Ni to form Ni₃Sn₄, leaving a nearly continuous Bi-rich phase above the Ni₃Sn₄. Since Bi-rich alloys tend to be brittle, a nearly continuous Bi-rich phase might weaken the strength of a solder joint. The Ni₃Sn₄ grain size increased gradually from the Ni/Ni₃Sn₄ interface to the Ni₃Sn₄/BiSn interface, which is probably an Ostwald ripening phenomenon.     

The investigation of an amidine-based additive in the perovskite films and solar cells

Here, we introduced acetamidine (C₂H₃N₂H₃, Aa)-based salt as an additive in the fabrication of perovskite (CH₃NH₃PbI₃) layer for perovskite solar cells. It was found that as an amidine-based salt, this additive successfully enhanced the crystallinity of CH₃NH₃PbI₃ and helped to form smooth and uniform films with comparable grain size and full coverage. Besides, perovskite film with additive showed a much longer carrier lifetime and an obviously enhanced open-circuit voltage in the corresponding devices, indicating that the acetamidine-based salt can reduce the carrier recombination in both the film and device. We further demonstrate a promising perovskite device based on acetamidine salt by using a configuration of ITO/TiO₂/Perovskite/Spiro-OMeTAD/Au under <150℃ fabrication condition. A power conversion efficiency (PCE) of 16.54% was achieved, which is much higher than the control device without acetamidine salt. These results present a simple method for film quality optimization of perovskite to further improve photovoltaic performances of perovskite solar cells, which may also benefit the exploration of A cation in perovskite materials.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.