阻抗谱研究Yb~(3+)掺杂(Bi_(0.5)Na_(0.5))TiO_3陶瓷的电学性能

采用传统的固相合成法制备了(Bi_(0.5)Na_(0.5))_(1-x)Yb_xTiO_(3 )(0≤x≤0.08)陶瓷,用X射线衍射仪和扫描电子显微镜测试了陶瓷的晶体结构和表面形貌,结果表明Yb~(3+)能够固溶到陶瓷晶格中形成钙钛矿结构,但随着掺杂量的增多会有杂相产生。用高温阻抗分析仪进行介电温谱的测试结果表明,Yb~(3+)的掺杂提高了陶瓷在高温下的温度稳定性,降低了介电损耗,并且使陶瓷的居里峰型变宽、峰值减小,弥散相变特征愈明显。阻抗谱和模谱的分析表明Yb~(3+)的介电弛豫行为主要是由载流子在晶粒间的长程迁移造成,掺杂降低了陶瓷中的氧空位数量,计算结果表明弛豫激活能随着掺杂量的增多不断变大。     

NBT-Ba(NbO3)2无铅压电陶瓷的压电介电性能

采用传统陶瓷制备方法,制备了一种新的(Na1/2Bi1/2)TiO3基无铅压电陶瓷(1-x)(Na1/2Bi1/2)TiO3-xBa(NbO3)2(摩尔分数x=0~1.4%)。X-射线衍射分析表明,所研究的组成均能够形成纯钙钛矿(ABO3)型固溶体。SEM观察结果表明,掺入Ba(NbO3)2促进了长条状晶粒的析出。不同频率下陶瓷材料的介电常数-温度曲线显示该体系材料具有明显的弛豫铁电体特征,且随着Ba(NbO3)2的增加,其弛豫性特征愈明显。检测了不同组成陶瓷的压电性能,发现材料的压电常数d33和平面机电耦合系数kp随着x值的增加先增加后降低,在x=0.6%时,陶瓷的d33=94 pC/N,kp=0.171,为所研究组成中的最大值,介电损耗tanδ则随x值的增加而增加。     

Gd掺杂对CaCu_3Ti_4O_(12)陶瓷材料压敏性能的影响

采用固相法制备了Ca_(1-x)Gdx_Cu_3Ti_4O_(12)(x=0~0.09)陶瓷系列样品,利用X射线衍射、Raman光谱和正电子湮没等技术手段,对系列样品的微观结构、缺陷浓度进行测试和表征。结果表明,在整个掺杂范围内体系未发生结构相变,掺杂引起体系晶格膨胀、分子极化率增加;随Gd掺杂量x的增加,空位型缺陷增加。电性能测试结果表明,适量Gd掺杂(x=0.01)有利于改善体系的压敏性能,而过量Gd掺杂(x=0.07~0.09)会阻碍晶界势垒的形成,因而抑制体系的压敏性能。讨论了体系微观结构、空位型缺陷浓度及晶界势垒高度等因素对体系压敏性能的影响特征。     

BiYbO3掺杂对KNN LS压电陶瓷微结构与电性能的影响

采用传统陶瓷烧结工艺,制备了BiYbO3掺杂的xBiYbO3-0.95(K05Na0.5)NbO3-0.05LiSbO3(xBY-KNN-LS)(x=0～0.002,摩尔分数)无铅压电陶瓷.研究了BiYbO3掺杂对陶瓷相结构、显微组织和电性能的影响.结果表明,随着BiYbO3掺杂含量的增加,晶粒变细,居里点逐步向低温方向移动,压电性能先增加后降低,介电损耗tan δ先增加后减小.在0≤x≤0.001 5的范围内,存在斜方相与四方相共存的准同型相界,当x=0.1％时得到最佳电性能:压电常数d33=245 pC/N,机电耦合系数kp=44.75％,居里温度Tc =365℃,tan δ=4.5％.     

La2O3和Nb2O5掺杂对SrTiO3氧敏特性及半导化影响

研究Nb和La双施主掺杂对SrTiO₃陶瓷氧敏性能及半导化的影响,采用固相法合成了La、Nb复合掺杂的钛酸锶Sr_1-xLa_xTi_1-xNb_xO₃(x=0,0.001,0.01,0.03,0.05,0.1)钙钛矿复合系氧化物。研究不同的La,Nb掺杂量对氧敏材料灵敏度、电导率的影响,对合成氧敏元件在高温下的氧敏性能、电导性进行了测定。结果表明,双施主掺杂不仅可促进SrTiO₃陶瓷半导化,而且对氧敏元件灵敏度有重要影响,x=0.3 时呈现出理想的氧敏特性。     

xCa_(0.8)Sr_(0.2)TiO_3-(1-x)Li_(0.5)La_(0.5)TiO_3系陶瓷介电性能的调控

采用烧成法制备了xCa_(0.8)Sr_(0.2)TiO_3-(1-x)Li_(0.5)La_(0.5)TiO_3(CST-LLT)(x=0.4~0.8)系介质陶瓷,表征了其物相组成、结构特征及介电性能。所制备的材料具有钙钛矿结构特征,随着Li_(0.5)La_(0.5)TiO_3组分的减少,1 170~1 260℃烧结的CST-LLT陶瓷介电常数(ε_r)变化范围在154.8~275.2,而品质因数(Q·f)在1 360~1 479GHz内先增加后逐渐减小,谐振频率温度系数(τ_f)变化范围为(-720.6~470.5)×10~(-6)/℃。当x=0.5,烧成温度为1 200℃,保温3h时,可得到理想的介电性能的介质陶瓷:ε_r=230,Q·f=1 455GHz,τ_f=24.5×10~(-6)/℃。     

Ba_(6-3x)(Nd_(1-y)Bi_y)_(8+2x)Ti_(18)O_(54)系微波介电陶瓷的研究

研究了Ba_(6-3x)(Nd_(1-y)Bi_y)_(8+2x)Ti_(18)O_(54)(x=0～1)陶瓷微波性能,并对其微观机理和晶体结构进行分析.随Bi_2O_3含量的增加,系统介电常数(ε)迅速增大,品质因数与频率的乘积(Q·f)逐渐减小.掺入Bi_2O_3后,系统中出现具有高ε的Bi_4Ti_3O_(12)晶相,并形成了类填满型钨青铜结构,阳离子极化增强,因此ε随Bi_2O_3含量的增加而增大.实验表明,当y=0.25～0.3时,Ba_(6-3x)(Nd_(1-y)Bi_y)_(8+2x)Ti_(18)O_(54)(x =0～1) 陶瓷具有优良的微波介电性能,其主要工艺条件和性能参数为烧结温度1 200 ℃保温4 h,ε≈102～107,Q·f≈20 000～22 000 GHz(1 GHz测量), 容量温度系数|αc|<10×10~(-6)/℃.     

ZrO2掺杂对Ba(Zn1/3Ta2/3)O3陶瓷介电性能的影响

采用固相反应烧结法制备了ZrO2掺杂的Ba(Zn1/3Ta2/3)O3微波介质陶瓷,研究了陶瓷的烧结特性和介电性能。结果表明,ZrO2掺杂能有效降低Ba(Zn1/3Ta2/3)O3陶瓷的烧结温度,改善陶瓷的微波介电性能。当x(ZrO2)=4%时,Ba(Zn1/3Ta2/3)O3陶瓷致密化烧结温度由纯相时的1 600℃降至1 300℃,同时陶瓷材料的微波介电性能达到最佳值,即介电常数εr=34.79,品质因数与频率的乘积Q×f=148 000(8GHz),谐振频率温度系数τf=0.3×10-6/℃。     

LiF/Li2CO3对PZT陶瓷低温烧结及压电性能的影响

采用固相合成法制备了Pb(Zr0.52Ti0.48)O3+x%LiF（PZT+x%LiF）及Pb(Zr0.52Ti0.48)O3+y%Li2CO3(PZT+y%Li2CO3)(x、y为质量分数)压电陶瓷,研究了x、y不同对PZT压电陶瓷烧结性、晶体结构、微观形貌及压电性能的影响。随着x、y的增加,PZT压电陶瓷的四方相晶胞比（c/a）均下降,但在x=y时, 与PZT+y%Li2CO3相比,PZT+x%LiF的c/a较小,居里温度基本不变,PZT+x%LiF及PZT+y%Li2CO3的压电性能小幅提升后下降,且在x=y=0.2时,其压电性能均取得最佳。结果表明,掺杂LiF、Li2CO3均能促进低温烧结,提高致密度;在1 100 ℃烧结温度下,PZT+y%Li2CO3样品性能较优,且低温烧结效果更好。但在掺杂量较大时,LiF对性能的恶化较小。     

掺杂Nd3+对CLST陶瓷微波介电性能的影响

用固相法制备了x(Ca0.61Nd0.26)TiO3(1-x)(Li1/2Sm1/2)TiO3(CNLST)(x=0.3～0.6)微波介质陶瓷,研究了掺杂Nd3+对CaTiO3-Li1/2Sm1/2TiO3(CLST)陶瓷介电性能的影响。结果发现,该体系在掺杂Nd3+后均形成钙钛矿结构,其介电常数εr和谐振频率温度系数τf均随x的增大而增加,品质因数与谐振频率的乘积Qf值随x的增大而降低;当x=0.48时,在1 150 ℃预合成,1 250 ℃烧结保温3 h得到材料的微波介电性能：εr=123,Qf=4 122 GHz（f=1.5 GHz）,τf=0.8 μ℃-1。     

3COM SuperStack 3 Firewall

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一种3×3卷积器的设计

给出了一种基于2的补码的卷积运算算法及其硬件实现体系结构。该算法结构使用了一个特殊的移位累加单元代替并行补码乘法,降低了卷积系数为负数时的计算复杂度。     

InCl分子B^3Ⅱ1态时间分辨谱研究

采用激光诱导荧光技术对InCl分子B3П1→X1∑+荧光光谱进行了分析和归属,并对 B3П1(v′=0)→X1∑+(v″=0)的时间分辨谱进行了观测．首次得到InCl分子B3П1态(v′= 0)无碰撞辐射寿命т0≈353ns,无辐射弛豫速率常数kQ≈1．985×10-10cm3molec-1s-1及 电子跃迁矩｜Re｜2=0．40D2．     

Improved performance of CH3NH3PbI3 based photodetector with a MoO3 interface layer

Planar CH₃NH₃PbI₃ perovskite based photodetectors are fabricated by a facile and low-cost one-step method. The devices show broad spectral photoresponse from the ultraviolet to whole visible region and the performance can be significantly improved by the introduction of a bipolar transporting MoO₃ interface layer between CH₃NH₃PbI₃ film and Au electrode. The photocurrent of the device with an optimized MoO₃ layer is about twice that of the reference device without MoO₃ layer, which results in a high ON/OFF current ratio of 5.9 × 10³ at 5 V. Besides, slightly increased photoresponse speed is also found in the optimized device with rise time and decay time of 21.6 and 9.9 ms, respectively. The improvement can be attributed to the improved hole and electron collection efficiency and the quickly filled in or emptied trap states at the CH₃NH₃PbI₃/Au interface due to the introduction of the bipolar transporting MoO₃ layer.     

Nonlinear Absorption Applications of CH3NH3PbBr3 Perovskite Crystals

Researchers have recently revealed that hybrid lead halide perovskites exhibit ferroelectricity, which is often associated with other physical characteristics, such as a large nonlinear optical response. In this work, the nonlinear optical properties of single crystal inorganic–organic hybrid perovskite CH₃NH₃PbBr₃ are studied. By exciting the material with a 1044 nm laser, strong two‐photon absorption‐induced photoluminescence in the green spectral region is observed. Using the transmission open‐aperture Z‐scan technique, the values of the two‐photon absorption coefficient are observed to be 8.5 cm GW^?1, which is much higher than that of standard two‐photon absorbing materials that are industrially used in nonlinear optical applications, such as lithium niobate (LiNbO₃), LiTaO₃, KTiOPO₄, and KH₂PO₄. Such a strong two‐photon absorption effect in CH₃NH₃PbBr₃ can be used to modulate the spectral and spatial profiles of laser pulses, as well as to reduce noise, and can be used to strongly control the intensity of incident light. In this study, the superior optical limiting, pulse reshaping, and stabilization properties of CH₃NH₃PbBr₃ are demonstrated, opening new applications for perovskites in nonlinear optics.     

Er3 /Yb3 共掺TeO2-WO3-Bi2O3玻璃的光谱性质

用高温熔融法制备了Er3+/Yb3+共掺的TeO2-WO3-Bi2O3玻璃,研究了该玻璃的吸收和荧光光谱性质.应用Judd-Ofelt(JO)理论计算了Er3+的谱线强度、自发辐射跃迁几率、荧光分支比和辐射寿命等光谱参数,并拟合了相应的强度参数Ωt(t＝2,4,6).Er3+在该玻璃中4I13/2→4I15/2发射的荧光半高宽(FWHM)为77nm,应用McCumber理论计算的受激发射截面为1.03×10-20cm2.其带宽特性FWHM×σpeake乘积优于掺Er3+的硅酸盐、磷酸盐和铋酸盐玻璃,说明这是一种制备宽带光纤放大器的优良基质材料.Er3+在400～850nm波长范围存在着5个上转换发射峰,分别对应Er3+的激发态4I7/2、2H11/2、4S3/2、4F9/2和4I9/2到基态4I15/2的发射,分析了其可能存在的上转换过程.     

Dissymmetrical 3×3 Coupled Optical Accelerometer

Without adding feedback to modulate light path system, the dissymmetrical 3×3 coupled optical accelerometer reduces the complexity of the design of light path system. Experiments prove that it can attain good demodulation effects. As carrier is not needed in this system, the frequency range of input signal is diminished so as to decrease the sampling frequency of accelerometer. This makes for the system on programmable chip(SOPC) design of digital demodulating system. The upper limit of accelerometer working frequency can reach 3 500 Hz. But affected by the inherent frequency of sensitive components, its working frequency is 10 Hz～1 000 Hz, and the sensitivity is 8.718 0 V/(m·s-2). This accelerometer can detect the dynamic range of acceleration signal real-timely, steadily and accurately, solving the dissymmetrical problem of light path caused by circumstances and the complexity of process.     

Dissymmetrical 3×3 Coupled Optical Accelerometer

Without adding feedback to modulate light path system, the dissymmetrical 3×3 coupled optical accelerometer reduces the complexity of the design of light path system. Experiments prove that it can attain good demodulation effects. As carrier is not needed in this system, the frequency range of input signal is diminished so as to decrease the sampling frequency of accelerometer. This makes for the system on programmable chip(SOPC) design of digital demodulating system. The upper limit of accelerometer working frequency can reach 3 500 Hz. But affected by the inherent frequency of sensitive components, its working frequency is 10 Hz～1 000 Hz, and the sensitivity is 8.718 0 V/(m·s-2). This accelerometer can detect the dynamic range of acceleration signal real-timely, steadily and accurately, solving the dissymmetrical problem of light path caused by circumstances and the complexity of process.     

Bi3+, Eu 3+, Tb3+ 掺杂Lu3TaO7的发光性能研究

采用固相反应法制备了Bi ³⁺ 、Eu³⁺ 、Tb³⁺ 掺杂的Lu₃TaO₇。测量了样品的X射线衍射谱、激发和发射光谱及荧光衰减曲线。三种离子掺杂的Lu₃TaO₇均呈现出强的荧光发射,其中Bi³⁺具有峰位在431 nm处的一强发射宽带,衰减寿命为16.8 μs,Eu ³⁺ 、Tb ³⁺ 则表现出稀土离子的特征锐发射峰,衰减寿命分别为1.26 ms和1.20 ms。因此,它们均是具有潜在应用前景的重闪烁体材料。