电子镇流器驱动器电路BL8305A

<正> 上海贝岭公司最近推出的电子镇流器专用控制/驱动器芯片 BL8305A 是BL8301的升级产品。与 BL8301相比,BL8305A 的功能进一步得到提升。众所周知,目前国外所有电子镇流器控制器IC 都是为驱动功率 MOSFET(或 IGBT)而设计的。BL8305A 成功解决了 MOS-FET 与双极型开关晶体管驱动的兼容性问题,它既可以驱动半桥配置中的两个功率 MOSFET,也可以用作驱动两只高/低端双极型功率晶体管。     

一种高性能电子镇流器的设计

介绍了BL8301的主要特点，给出了提高抗干扰能力的滤波电路和用于荧光灯的电子镇流器实用电路，对工作原理进行了详细分析，给出了电路设计参数和设计方法，简要说明了在设计制作过程中的难点问题。该电子镇流器具有结构简单、成本低、性能优良、可靠性高的特点。实验验证了设计是可行的。     

简单可靠的两片式电子镇流器设计

FAN7527和KA7541分别是FairchildSemiconductor公司生产的高效低功耗PFC控制器和电子镇流器控制器。文中介绍了它们的主要特点和引脚功能 ,给出了用FAN7527进行功率因数校正 ,并选用KA7541作为荧光灯电子镇流器控制器设计的、简单、可靠且成本低廉的新型电子镇流器的电路设计方案     

基于AVR单片机的电子镇流器设计

电子镇流器(Electrical ballast)是镇流器的一种,是指采用电子技术驱动电光源,使之产生所需照明的电子设备。电子镇流器自身功耗低,有更佳的照明效果,消除了闪频现象,发光更稳定,而且可以调光。文章采用AVR单片机作为控制芯片,通过电子镇流器进行调光和相关功能的控制,最大限度地发挥智能型镇流器的特点。实际应用表明,文中的方法有效。     

新型电子镇流器控制芯片IR2156

文中介绍了一款低成本、高效电子镇流器控制芯片IR2156的主要特点和功能模式 ,给出了由IR2156组成的紧凑型节能灯和普通荧光灯电子镇流器的应用电路     

基于L6561和UBA2014芯片的有源功率因数电子镇流器

介绍一种有源功率因数校正(APFC)电子镇流器,采用L6561作为APFC芯片, UBA2014作为半桥驱动功率MOSFETs和异态保护芯片.分析了电子镇流器芯片部分的原理和功能,重点解释了L6561电路部分的功率因数调节和UBA2014电路部分实现的预热和保护功能,给出并分析了实际电路原理图.对5组2*26 W荧光灯进行测试,电子镇流器功率因数达到0.99以上,电路具有预热措施和异常情况保护等功能.     

电子镇流器设计与制作的关键问题及优化措施

介绍了绿色照明中的关键器件——常用荧光灯的电子镇流器,重点分析了电子镇流器的应用中值得关注的工作频率、电源滤波、预热启动、异常状态保护、结构设计以及器件匹配等问题,并提出优化措施;总体构思了未来性能优良的电子镇流器的功能结构。     

基于VK05CFL的CFL电子镇流器设计

基于电子驱动器VK05CFL的CFL电子镇流器可以实现预热、灯寿终保护、灯存在检测和自动重启等功能。文中介绍了VK05CFL的引脚功能和内部结构，给出了用VK05CFL芯片设计高性能电子镇流器的几种实现方案。     

电子镇流器专用模块IR2157及应用

IR2175是IR公司推出的一种电子镇流器专用模块。该模块功能齐全，可完成电子镇流器的控制、驱动及多重保护。本文介绍了IR2157的功能特点、引脚功能和电气参数，最后给出了IR2157的典型应用电路及运行程序图。     

40W双管荧光灯电子镇流器

目前市面上流行的40W及40W以上荧光灯电子镇流器存在的突出问题表现为性能低劣,可靠性与安全性差。事实已经证明,采用常规的电路和技术很难实现产品标准规定的有关荧光灯交流电子镇流器的性能要求和安全要求。三星公司推出的KA7531控制及驱动IC,为设计30W以上荧光灯电子镇流器提供了一切所必须的功能。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.