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1.
本文扼要叙述用直流溅射法制备具有较高电阻,C轴取向好的ZnO压电薄膜的方法.沉积条件为:溅射电流密度J=1.2—1.5毫安/厘米~2,溅射气压P=6×10~(-2)—1×10~(-1)毛,基片温度Ts=160—280℃,沉积速率V=0.1—0.4微米/小时,得到的薄膜洁净透明,分散度α<6°,偏离度M≤3°,电阻率ρv=105—10~7欧-厘米,粒度300—500埃.并探索了温度,基片位置,气体组分对薄膜性能的影响.  相似文献   

2.
文献[1]在讨论晶体电光调Q时,提到KDP类和铌酸锂(LiNbO_3)两种晶体的感应折射率椭球方程为 (1/n_0~2-rE)x′~2+(1/n_0~2+rE)y′~2+(1/n_e~2)z′~2=1 (1)其中对KDP类晶体rE=-r_(63)E_x,感应主轴x′,y′相对于原坐标系的Z轴旋转45°;对LiNbO_3晶体,rE=r_(22)E_x,感应主轴也旋转45°。  相似文献   

3.
采用射频磁控溅射技术在玻璃衬底上沉积了AZO透明导电薄膜,应用灰关联-田口实验法设计了L9(34)混合直交表,研究了制程工艺对薄膜沉积速率、电阻率、光穿透率、结晶性的影响。结果表明沉积薄膜的最佳制程参数为射频功率120 W、溅射压强2 Pa、靶材-基板距离8.5 cm、薄膜沉积时间90 min;实验显示最佳制程参数下所得透明导电薄膜沉积速率为8.04 nm/min,电阻率为2.6×10–3.cm,可见光穿透率维持在84%左右。  相似文献   

4.
本文对硬态铍青铜(QBe2)的超塑性力学行为和组织变化进行了研究。合金在温度为450~640℃和应变速率为1.95×10~(-4)~1.67×10~(-2)S~(-1)的范围内拉伸,能呈现较好的超塑性效应。当合金在550℃下以1.95×10~(-4)S~(-1)的应变速率拉伸时,延伸率可达780%。在较低的应变速率下拉伸。合金具有各向异性。在550℃下以8.33×10~(-4)S~(-1)的应变速率拉伸时,拉伸方向与原材料轧制方向成0°、45°和90°角的试样,延伸率分别为550%、860%和675%。而在较高的应变速率下拉伸,这种塑性差异消失。合金不需预先处理便可进行超塑性变形,通过动态再结晶使原始形变组织转化为微细等轴晶粒,同时利用第二相粒子对晶界的钉扎来控制晶拉粗化。拉伸后的试样在光学显微镜下观察未发现空洞,但试样的断裂却是由空洞的连接所致。  相似文献   

5.
用溅射淀积方法,温度在250~300℃之间,人们已成功地在(111)CdTe衬底上生长出n型Cd_xHg_(1-x)Te外延层。外延层的厚度为10~30微米,其淀积速率通常取为2微米/小时。Cd组分为0.34的Cd_xHg_(1-x)Te外延层的典型电子浓度约为2×10~(16)厘米~(-3),在77K温度下,其霍尔迁移率为20000厘米~2伏~(-1)秒~(-1)。经退火后,该膜层可转变成P型。本文首次报导在溅射层衬底上制备的背照射32×32平面红外光伏镶嵌列阵的特性。这种列阵的混合结构已经制成,并且进行了评价,已获得的初步结果表明,这种镶嵌结构完全适用于混合式焦平面。  相似文献   

6.
我们在热管炉反应器中作了Ba/N_2O的化学发光反应,记录并分析了产物BaO(A~1∑~+→X~1∑~+)的化学发光光谱。计算了温度为993K,Ar压为0.5、2.5、5、12和24托时反应产物BaO A~1∑~+,v'=0—8的相对布居。发现,v'-1、3、6和7有异常高的布居,而 v'=0的布居极低,证明 BaO A~1∑~+态不是化学反应产物的“先驱态”以及此态存在强的微扰。根据反应的特点,建立了在具有足够量缓冲气体时 Ba/N_2O反应产物 BaO A'∑~+v'=0的布居速率方程,求得在氩气中(993K)BaO A'∑~+v'=1→0的弛豫速率常数 k_(1-0)~(Ar)为2.74×10~5托~(-1)·秒~(-1)和 v'=0的电子猝灭速率常数 k_Q~(Ar)为4.59×10~3托~(-1)·秒~(-1),在氮气中(993K)相应速率常数 k_(1-0)~N_2和 k_Q~N_2分别为5.60×10~5托~(-1)·秒~(-1)和4.09×10~(-4)托-1·秒~(-1)。在氮气中传能速率要比在氩气中的大,这是因为氮具有内自由度,使传能中能量转变为平动能的数值△E减小(传能速率随△E指数下降)。  相似文献   

7.
利用化学计量偏离法制备了x(~-)0.20的p-n结Cd_xHg_(1-x)Te器件,来研究10.6微米波长的光伏探测。这种光电二极管的灵敏面积为4×10~(-4)~10~(-3)厘米~2,观测到器件在77°K下当反向偏压为-0.1伏时,其并联电阻和电容分别为10~5欧和8微微法。研究了探测CO_2激光的性能,当本机振荡器功率为1毫瓦时,所得结果是:10~(10)相似文献   

8.
采用金刚石对顶砧高压装置测量了半磁半导体Cd_(0.95)Fe_(0.05)Te光吸收边的压力效应,得到其一级和二级压力系数分别为α=8.2×10~(-11)eV/Pa和β=-7.7×10~(-21)eV/Pa~2;测量了不同温度下的Cd_(0.95)Fe_(0.05)Te吸收谱,得到其能隙温度系数为α=-4.4×10~(-4)eV/K。此外,在低温下发现了一个Fe~(2+)吸收峰,根据晶体场理论判定为Fe~(2+)的~5E→~3T_1跃迁吸收峰。  相似文献   

9.
已制得D~*(500°K,1.1)=7×10~8厘米·赫~(1/2)/瓦的大面积PZT探测器和最小响应时间为5毫微秒的快速探测器。热电系数为27毫微库仑/厘米~2°K及对此器件测得的材料灵敏值为2.8×10~(-9)库伦厘米/焦耳。  相似文献   

10.
一、技术性能 1.天线座谐振频率约10赫天线仰角转动范围机械制动范围 -12°+185°电气制动范围 -8°~+181°天线方位转动范围 360°无限制俯仰轴和方位轴不正交误差(峯—峯值) ±0.05毫弧方位轴和安装面不正交誤差(峯—峯值) ±0.05毫弧瞄准望远鏡: 放大倍数约40倍鉴別率 3×10~(-5)弧孔径 75毫米有效视场 8毫弧光轴对安装面的稳定度小于±10~(-5)弧天线座总重约6300公斤  相似文献   

11.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

12.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

13.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.  相似文献   

14.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.  相似文献   

15.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.  相似文献   

16.
Waveguide multilayer optical card (WMOC) is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling & processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic (VB) language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.  相似文献   

17.
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's.  相似文献   

18.
It is a key problem to accurately calculate beam spots' center of measuring the warp by using a collimated laser. A new method, named double geometrical center method (DGCM), is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device (CCD) is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What's more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.  相似文献   

19.
The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.  相似文献   

20.
Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.  相似文献   

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