共查询到19条相似文献,搜索用时 70 毫秒
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本文采用阳极氧化法剥层技术和扩展电阻法研究了砷离子注入硅中的高温瞬态热退火行为;测定了退火后杂质分布结深和杂质激活率,并与理论结果进行了比较。结果表明:120keV 砷注入5×10~(15)cm~(-2),经1180℃3分钟退火后,杂质激活率和再分布情况都比较理想。本研究首次采用扩散炉进行高温热退火。 相似文献
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电子辐照高阻NTD硅中缺陷能级和少数载流子寿命 总被引:1,自引:0,他引:1
<正>近十几年来,用中子嬗变技术在硅中进行磷掺杂,可获得n型高阻NTD硅单晶,用电子辐照在硅中引入复合中心以降低少子寿命的方法,也引起人们的极大关注.为此,我们将NTD硅制成p~+n结二极管,经电子辐照后,分别从深能级瞬态谱(DLTS)测量中获得相应的缺陷能级、俘获截面和浓度等参数,并用二极管反向恢复时间法,测量了这些样品的少子寿命.对所得结果作出初步的分析讨论. 相似文献
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用DLTS法对经两步快速热退火(RTA)后的注硅不掺杂SI-GaAs中的缺陷进行了研究。确定了激活层中存在着两个电子陷阱组(以主能级ET1、ET2标记)及其电学参数的深度分布。在体内,ET1=Ec0.53eV,n=2.310-16cm2;ET2=Ec0.81eV,m=9.710-13cm2;密度典型值为NT1=8.01016cm-3,NT2=3.81016cm-3;表面附近,ET1=Ec0.45eV,NT1=1.91016cm-3;ET2=Ec0.71eV,NT2=1.21016cm-3,分别以[AsiVAs,AsGa]和[VAsAsiVGaAsGa]等作为ET1和ET2的缺陷构型解释了它们在RTA过程中的行为。 相似文献
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高阻硅中深能级与少子寿命的研究 总被引:1,自引:0,他引:1
本文测量了n型高阻硅在9种不同浓度的金掺杂前后少子寿命的变化,以及两类不同电阻率的n型高阻硅在7种不同辐照剂量的1MeV高能电子辐照前后少子寿命的变化;测量了金掺杂和高能电子辐照在硅中引入的主要深能级;研究对比金掺杂和高能电子辐照对硅单晶性能的影响及其在提高电子器件开关速度方面的应用。 相似文献
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研究了脉冲中子辐照的中子嬗变掺杂 (NTD)硅二极管中缺陷的形成及其退火特征 ,并与热中子辐照样品进行了比较。深能级瞬态谱仪 (DL TS)测量表明硅中主要存在五类电活性缺陷 :氧空位 E1(Ec- 0 .19e V) ,不同荷电态的双空位 E2 (Ec- 0 .2 8e V)和 E4 (Ec- 0 .4 0 e V) ,双空位与氧杂质相结合的络合物 E3 (Ec- 0 .31e V) ,以及与样品材料原生缺陷有关的辐照感生缺陷 E5(Ec- 0 .4 8e V)。实验结果表明 ,脉冲中子辐照由于其高的中子能量和辐照剂量率 ,导致复杂络合物的浓度高于简单缺陷浓度。进一步 4 0 0℃温度以下退火实验显示了缺陷的分解和重建过程 相似文献
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快速热退火铝合金降低硅p~+-n结的漏电流 总被引:1,自引:0,他引:1
快速热退火铝合金工艺可以明显改善硼扩硅P~+-n结的漏电流.X射线衍射实验表明,铝原子补偿了硼原子在硅片中造成的应变,改善了晶体的完整性. 相似文献
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JINRui-min LUJing-xiao LIRui WANGHai-yan FENGTuan-hui 《半导体光子学与技术》2005,11(1):37-39
The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃ for 120s, and 950℃ for 120s. The results indicate the crystallization at 850℃ and 950℃ are better as shown in micro-Raman scattering and scanning electronic microscope. 相似文献
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The deep-level defects are introduced into n-type silicon by rapid thermal annealing (RTA). The kinds of the defects and thier densities vary with rapid annealing temperature. The minority carrier lifetime is reduced rapidly due to these defects. There are two kinds of the defects: one is related to the metal impurity frozen into the crystal lattice defect: which can be removed by subsequent annealing near 650℃, the other is related to the intrinsic defect of the crystal, which remains after subsequent annealing. Our results show that latter is associated with dislocation. 相似文献
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V. Janardhanam A. Ashok KumarV. Rajagopal Reddy Chel Jong Choi 《Microelectronic Engineering》2011,88(4):506-508
The effects of rapid thermal annealing on deep level defects in the undoped n-type InP with Ru as Schottky contact metal have been characterized using deep level transient spectroscopy (DLTS). It is observed that the as-deposited sample exhibit two deep levels with activation energies of 0.66 and 0.89 eV. For the samples annealed at 300 °C and 400 °C, a deep level is identified with activation energies 0.89 and 0.70 eV, respectively below the conduction band. When the sample is annealed at 500 °C, three deep levels are observed with activation energies 0.25, 0.32 and 0.66 eV. Annealing of the sample at 300 °C, orders the lattice of as-grown material by suppressing the defect 0.66 eV (A1) which is found in the as-deposited sample. The trap concentration of the 0.89 eV deep levels is found to be increased with annealing temperature. The deep level 0.32 eV may be due to the lattice defect by thermal damage during rapid thermal annealing process such as vacancies, interstitials and its complexes, indicating the damage of the sample after annealing at 500 °C. The defects observed in all the samples are possibly due to the creation of phosphorous vacancy or phosphorous antisite. 相似文献
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用卤素灯快速退火工艺代替原始的炉退火工艺,使全离子注入的硅双极浅结器件的杂质浓度更高、结深更浅,从而有效地改善了器件的电参数性能。用这种新工艺制做的分频器,工作频率由原来的1300MHz提高到了1600MHz。该工艺操作方便,节省能源,均匀性、重复性、可控性都大大地优于原始炉退火工艺。 相似文献
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本文描述用离子束透过钽金属膜进行混合和快速热处理方法来形成钽的硅化物.用溅射方法在P型硅衬底上淀积一层金属钽,然后用砷离子束透过钽金属模进行混合,采用快速热处理后形成了平整的硅化钽薄层.使用厚度为500埃的钽金属膜,得到钽的硅化物薄层电阻为5.5Ω/□.研究了砷离子能量、剂量及钽膜厚度对钽的硅化物薄层电阻的影响.用透射电镜和台阶仪对所形成的硅化钽进行了分析和厚度测量. 相似文献
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JIN Rui-min ZHENG Xiao-yan CHEN Lan-li LUO Peng-hui GUO Xin-feng LU Jing-xiao 《半导体光子学与技术》2009,15(2):117-119
Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing (FA) and rapid thermal annealing ( RTA),respectively. From the Raman spectra and scanning electronic microscope(SEM),it found that the thin films made by RTA had smooth and perfect structure,while the thin films annealed by FA had a higher degree of structural disorder. 相似文献