非晶Fe73.5Cu1Nb3Si13.5B9合金的激光纳米晶化研究

在相同激光扫描速度(20mm／s)和不同激光功率(150W，200W，250W，300W)工艺条件下，利用CO2激光对铁磁Fe73．5Cu1Nb3Si13．5B9非晶带进行了辐照处理，诱导非晶带样品发生纳米晶化。应用穆斯堡尔(Mossbauer)谱(MS)、透射电镜(TEM)和X射线衍射(XRD)对实验样品的晶化工艺、纳米晶相的组织结构、晶化量和纳米晶化机理等进行了研究。结果表明，晶化析出相是α-Fe(Si)单相固溶体，具有4种超精细结构；其晶粒尺寸约为10～20nm；纳米晶均匀分布在非晶基体上，形成非晶相与纳米晶化相的双相组织结构。随着激光功率的增加，纳米晶化量随着增加，可通过控制激光处理工艺参量，来实现纳米晶化量的控制。     

CO2激光辐照Fe73.5Cu1Nb3Si13.5B9非晶合金的微量晶化

利用透射穆斯堡尔谱 (TMS)对原始态和晶化后非晶软磁合金Fe73.5Cu1 Nb3Si1 3.5B9进行了结构分析。实验结果表明 ,利用连续CO2 激光处理 ,可使样品的非晶带表面产生少量晶化 ,晶化析出相为Fe Si;在样品的非晶相中发生了磁矩重排 ,原子磁矩在面内取向占优。在一定激光辐照工艺条件下 ,可以控制样品的磁矩变化并实现微量晶化     

Al-Cu-Fe合金中ε1相的结构和以B2为基的若干相的电子衍射鉴定

采用扫描电子显微镜观察和透射电子显微分析等方法，研究了Al—Cu—Fe合金中以B2为基的若干合金相的成分和结构。根据ε1(Cu3Al2)的电子衍射的实验照片，提出了ε1(Cu3Al2)相的结构模型。通过对照模拟计算的与实验的选区电子衍射花样，对Al-Cu—Fe合金中的β相、τ3相、ε1相和η2相进行了鉴定，讨论了如何由选区电子衍射花样的特征来区别这些相。     

GaN在Si(001)上的ECR等离子体增强MOCVD直接生长研究

研究了用电子回旋共振(ECR)等离子体增强金属有机物化学气相沉积(PEMOCVD)技术在Si(001)衬底上,低温(620～720℃)下GaN薄膜的直接外延生长及晶相结构.高分辨透射电镜(HRTEM)和X射线衍射(XRD)结果表明:在Si(001)衬底上外延出了高度c轴取向纤锌矿结构的GaN膜,但在GaN/Si(001)界面处自然形成了一层非晶层,其两个表面平坦而陡峭,厚度均匀(≈2nm).分析认为,在初始成核阶段N与Si之间反应所产生的这层SixNy非晶层使GaN的β相没有形成.XRD和原子力显微镜(AFM)结果表明,衬底表面的原位氢等离子体清洗,GaN初始成核及后续生长条件对GaN膜的晶体质量非常重要.     

GaN在Si(001)上的ECR等离子体增强MOCVD直接生长研究

研究了用电子回旋共振(ECR)等离子体增强金属有机物化学气相沉积(PEMOCVD)技术在Si(001)衬底上,低温(620～720℃)下GaN薄膜的直接外延生长及晶相结构.高分辨透射电镜(HRTEM)和X射线衍射(XRD)结果表明:在Si(001)衬底上外延出了高度c轴取向纤锌矿结构的GaN膜,但在GaN/Si(001)界面处自然形成了一层非晶层,其两个表面平坦而陡峭,厚度均匀(≈2nm).分析认为,在初始成核阶段N与Si之间反应所产生的这层SixNy非晶层使GaN的β相没有形成.XRD和原子力显微镜(AFM)结果表明,衬底表面的原位氢等离子体清洗,GaN初始成核及后续生长条件对GaN膜的晶体质量非常重要.     

Al-Cr二元合金中的一个新正交相O-Al_(11)Cr_2

通过透射电镜原位观察,发现单斜η-Al11Cr2相在800℃保温2h后,其三个主带轴电子衍射图中的超点阵弱点逐渐减弱直至消失,且a轴和c轴所成的角度由91°变为90°,这些变化意味着单斜η-Al11Cr2相在加热后转变为一个新相,点阵参数为a=1.2428nm,b≈1.2658nm,c≈3．0456nm的体心正交相,命名为O-Al11Cr2.其[010]电子衍射图具有伪十次对称特点,因此也是一个十重对称准晶近似相.     

铁基非晶软磁合金的制备及磁性能研究

研究了铁基非晶(Fe1–xCox)78.4Nb2.6Si9.0B9.0Cu1.0(x=0,0.15,0.35,0.55或0.75)软磁合金的制备工艺及磁性能。结果表明:采用熔体快淬法制备的非晶薄带宽约3mm,厚20～40μm;最佳工艺参数为铜轮转速35m/s,熔体射流压力0.14MPa;借XRD分析了合金的相结构,发现合金薄带为非晶态;通过振动样品磁强计(VSM)测量了磁性能,其Bs大于1.00T,Hc为2.31～5.17kA/m。用畴壁钉扎效应分析了Hc偏高的原因。     

Mn64Co8Si28急冷合金中的U相及长周期结构

在标准成分为Mn_(64)Co_8Si_(28)的急冷合金中观察到了一种新相,电子探针分析测定其成分为Mn66.9Co8.7Si24.4,与U相标准成分基本一致,故暂称之为U相。大角度倾转的电子衍射实验确定U相为六角晶系,其晶格常数为:a=0.68nm,c=1.29nm。图1绘出绕c~*轴倾转的一系列衍射谱中三张特征谱。因为出现了l=2k+1的斑矢,故可认为U相是简单六角结构。图1还展示了此样品因急冷条件下形成长周期结构,从而导致沿C轴方向存在一系到卫星斑点并形成明显的衍射条纹。     

激光重熔法制备Fe73.5Cu1Nb3Si13.5B9纳米晶块材

通过激光快速熔化Fe73.5Cu1Nb3Si13.5B9非晶薄带,微小的熔池快速凝固后直接得到具有纳米晶结构的块材.纳米晶结构的块材的尺寸决定于激光重熔工艺.当激光的输入光斑直径为20mm~40mm、输出光斑直径约为2mm、激光的扫描速度为5mm/s时,可以得到2mm深度,长度与宽度不限的纳米晶块材.组织分析表明,得到的纳米晶块材的晶化主相是α-FeSi相,其晶粒尺寸大约为25nm,同时,还有球状Nb富集区生成.     

Fe_(74)Co_xY_(6-x)B_(20)合金的热稳定性和磁性

采用单辊快淬法制备合金薄带Fe74CoxY6-xB20(粒子数分数x=2,3,4)合金系,取不同的温度对合金进行热处理,用X射线衍射(XRD),差热分析仪(DSC),振动样品磁强计(VSM)等测试手段对样品的晶化过程、热性能和磁性能进行研究。结果表明:制备的Fe74CoxY6–xB20均为非晶合金,Fe74CoxY6-xB20(x=2,3,4)非晶合金的晶化激活能分别为473.7,583.0和570.1kJ/mol,Fe74Co3Y3B20非晶合金热稳定性最好。非晶合金Fe74CoxY6-xB20(x=2,3,4)的饱和磁化强度MS分别为110,105和109A·m2·kg–1,矫顽力都较低,适量地添加Co提高了合金的非晶形成能力和磁性能。     

Fe-C-Si-B合金连续激光非晶化层的组织构成研究

在铸铁表面Ｆｅ－Ｃ－Ｓｉ－Ｂ激光共晶合金化层上获得了许多表征非晶态的白亮层，其中最大的占整个熔池面积的８０％以上。共晶基体外延生长层的突然中断是得到白亮层的首要条件。经透射电镜和高分辨率扫描电镜分析发现，白亮层由结构不同的三个亚层组成：表层为均匀的纳米晶，中部为非晶态，底层是不均匀的纳米晶。     

Zero Thermal Expansion Achieved by an Electrolytic Hydriding Method in La(Fe,Si)13 Compounds

The La(Fe,Si)₁₃‐based compounds have been recently developed as promising negative thermal expansion (NTE) materials by elemental substitution, which show large, isotropic and nonhysteretic NTE properties as well as relatively high electrical and thermal conductivities. In this paper, the La(Fe,Si)₁₃ hydrides are prepared by a novel electrolytic hydriding method. Furthermore, the thermal expansion and magnetic properties of La(Fe,Si)₁₃ hydrides are investigated by the variable‐temperature X‐ray diffraction and physical property measurement system. Fascinatingly, it is found that room‐temperature NTE properties and zero thermal expansion (ZTE) properties with broad operation‐temperature window (20–275 K) have been achieved after electrolytic hydriding. The further magnetic properties combined with theoretical analysis reveal that the improvements of NTE and ZTE properties in the La(Fe,Si)₁₃ hydrides are ascribed to the variations of magnetic exchange couplings after hydrogenation. The present results highlight the potential applications of La(Fe,Si)₁₃ hydrides with room‐temperature NTE and broad operation‐temperature window ZTE properties.     

Stability of Frenkel pairs in Si(1 0 0) surface in the presence of germanium and oxygen atoms

A first-principles pseudo-potential study of Frenkel pair generation close to the Si(1 0 0) surface in the presence of germanium and oxygen atoms is reported. The energies and structures of the defect structures (i.e. vacancy and relaxed tetrahedral Si interstitial) are calculated using supercell with up to 88 atoms. We present results obtained using the generalized gradient approximation (GGA) for the exchange-correlation energy. We examine the effect of the presence of germanium and oxygen atoms on the stability of Frenkel pairs generated near the Si(1 0 0) surface by comparing a number of individual cases, starting from vacancy interstitial pairs situated at various positions. The general tendency of the created interstitials is to climb towards the surface, but they generally remain in subsurface layers, ready to migrate into the layer. This tendency is enhanced by the presence of the Ge and/or O atoms. We show that the formation energy is lower and Si interstitials can be created with energies as low as 1.5 eV.     

PECVD法制备的ZnO薄膜结晶性能的影响

报道了在等离子体作用下,以CO2/H2为氧源,Zn(C2H5)2为锌源,N2为载气,在Si(111)衬底上采用自行设计等离子体化学气相沉积(PECVD)装置来生长的ZnO薄膜。采用X射线衍射仪(XRD)、原子力显微镜(AFM)和场发射扫描电镜分别对不同衬底温度生长的薄膜样品进行了组成、表面和横截面的形貌表征,并且测试了薄膜的PL谱。研究结果表明,衬底温度直接影响薄膜的结晶质量。随衬底温度的升高,ZnO薄膜的结晶取向性开始增强,晶粒尺寸增大。在衬底温度约为450℃时,生长的ZnO薄膜有很强的择优取向性。     

单晶硅衬底材料中的消光衍射

在经典衍射理论中,Si(2 0 0 ) ,Si(2 2 2 )等4 n+2面的反射是消光的,但在单晶硅或硅基材料中,常发现Si(2 0 0 ) ,Si(2 2 2 )的衍射.考虑非谐效应和电子云反对称分布的贡献,分别计算了Si(2 0 0 ) ,Si(2 2 2 )消光衍射的相对强度,并用XRD测试手段进行了验证.结果表明,理论与实验值基本符合.在室温下,Si(2 0 0 ) ,Si(2 2 2 )衍射主要是因为反对称的电子云分布所致.同时,强调了Si(2 0 0 ) ,Si(2 2 2 )衍射在XRD分析中的应用     

Fabrication of Co2Fe(Al,Si) and Co2Fe(Al,Si)/MgO on Ge(111) Substrate and Its Magnetic Properties

We investigated the interfacial effects on magnetic properties in Co₂Fe(Al,Si)/Ge (CFAS/Ge) and CFAS/MgO/Ge systems to demonstrate the effects of the interface structure on magnetic properties. CFAS and CFAS/MgO were deposited on the i-Ge(111) substrate. In-situ reflection high energy electron diffraction (RHEED) patterns showed epitaxially grown CFAS and MgO on Ge(111). According to the X-ray diffraction (XRD) ϕ-scan of CFAS(220), we determined that the crystallographic orientation relationships were CFAS(111)<–110>// Ge(111)<–110> and CFAS(111)<–110>//MgO(111)<–110>Ge(111)<–110>. The magnetic properties were measured by the vibrating sample magnetometer (VSM) and the saturation magnetization M_s value of CFAS with 2-nm thick MgO reached the value of L2₁ ordered one. A uniaxial magnetic anisotropy behavior was observed both in CFAS/Ge and CFAS/MgO/Ge structures after annealing. We confirmed the behavior did not only originate from the CFAS/Ge interface but also CFAS/MgO and the ordering structure.     

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm×5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 μm and a gate width of 60 μm demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 μA/mm at the gate voltage of −10 V.     

铁基合金激光熔覆层组织分布及开裂敏感性研究

在45#钢基底上进行了铁基合金粉末激光熔覆实验。利用扫描电镜观察了熔覆层横断面的金相显微组织形态,对组织的不同特征部位进行了EDS能谱分析,使用X射线衍射仪对熔覆层进行物相分析。结合熔覆层的组织成分分布和激光熔覆过程中组织凝固的特点,分析得到熔覆层中存在少量的Si和B与Fe、Cr、Ni、O结合形成的低熔点共晶,低熔点共晶分布在晶界,尤其是夹杂在熔覆层表层部分,成为裂纹源。调节熔覆材料的成分,减少低熔点共晶产生,可以有效抑制熔覆层的裂纹敏感性。