CoFe/Cu/CoFe/IrMn自旋阀结构多层膜磁化反转过程的研究

通过高真空直流磁控溅射的方法制备了结构为//Ta(5nm)/Co75 Fe25(5nm)/Cu(2.5nm)/Co75Fe25(5nm)/Ir20 Mn80(12nm)/Ta(8nm)的顶钉扎自旋阀结构多层膜,研究了磁场循环次数、反向饱和场等待时间和磁场变化率对自旋阀结构多层膜磁化反转过程的影响.结果表明,磁场循环次数和反向饱和场等待时间对自由层的磁化反转过程没有影响,而在被钉扎层中出现了练习效应和时间效应;磁场变化率对被钉扎层和自由层的前、后支反转场的影响变化趋势相似,但反铁磁层对被钉扎层的反转有一定的影响.     

Study of magnetization reversal by minor loops in IrMn/CoFe exchange-biased bilayers

We report a detailed investigation of the magnetization reversal by minor loops in Co75Fe25 (t) single layer and Ir22Mn78(10 nm)/CoFe(t) exchange-biased bilayers with different CoFe thicknesses. With increasing CoFe layer thickness in IrMn/CoFe bilayers, the magnetization reversal process shows a transition from the coherent rotation to the domain-wall motion, which is attributed to the competition among the antiferromagnetic domain wall energy, ferromagnetic domain wall energy, and the interface coupling between antiferromagnetic and ferromagnetic layers.     

退火对CoFe/IrMn双层膜结构和磁性能的影响

采用高真空直流磁控溅射的方法制备了结构为//Ta(5nm)/Co75Fe25(5nm)/Ir20Mn80(12nm)/Ta(8nm)的双层膜,通过X射线衍射(XRD)、原子力显微镜(AFM)和振动样品磁强计(VSM)研究了退火对双层膜的结构及磁性能的影响;并通过样品在反向饱和场下停留不同的时间,研究了退火对双层膜的磁稳定性的影响。结果表明,退火使得IrMn(111)织构减弱,表面/界面粗糙度增大,交换偏置场减小,矫顽力增加,退火降低了双层膜的磁稳定性。     

Characterization of Microstructural and Morphological Properties in As-deposited Ta/NiFe/IrMn/CoFe/Ta Multilayer System

Surface morphology and its relationship with microstructure in Ta/NiFe/IrMn/CoFe/Ta multilayer system deposited by pulsed DC magnetron sputtering have been investigated in dependence of Ta buffer and NiFe seed layer thicknesses using atomic force microscopy.The structural parameters such as grain size,dislocation density,texture and strain were calculated.For each surface,a self-affinity behavior with mean fractal dimensions in the range of 2.03-2.18 was found.Additionally,it was also observed that the surface of all samples has locally smooth textured surface structure in the short range.The texture aspect parameter and texture direction index have been obtained for isotropy/anisotropy surface texture.A significant relationship between the surface texture and the strength of the〈111〉texture in IrMn layer has been found.The analysis indicated that the surface roughness is strongly affected by the thicknesses of the NiFe seed and Ta buffer layers.     

低剂量Ga~+辐照对CoFe/IrMn双层膜结构和磁性能的影响

采用高真空直流磁控溅射的方法制备了结构为//Ta(5nm)/Co75Fe25(5nm)/Ir20Mn80(12nm)/Ta(8nm)双层膜,通过X射线衍射(XRD)、原子力显微镜(AFM)和振动样品磁强计(VSM)等分析测试手段,研究了低剂量Ga+离子辐照对双层膜结构和磁性能的影响;通过样品在反向饱和场下停留时间研究了低剂量Ga+离子辐照对双层膜的磁稳定性的影响;并利用SRIM2003软件模拟分析了离子辐照后Ga元素在IrMn层中的深度分布。结果表明,低剂量Ga+离子辐照对双层膜中反铁磁层IrMn的〈111〉方向织构影响甚微;而双层膜的交换偏置场以及界面粗糙度随着Ga+离子辐照剂量的增大而减小;低剂量Ga+离子辐照后双层膜磁稳定性降低。     

Magnetoelectric Effect in CoFe Alloy/Piezoelectric/CoFe Alloy Three-Layered Structures

In this work, we investigated the characteristics of a direct magnetoelectric effect on three-layered multiferroic structure by method of harmonic field modulation. Multiferroic structures had the same piezoelectric layer—commercial PZT ceramics VIBRIT 1100 and different ferromagnetic layers—Ni and various kinds of commercial CoFe alloys. The largest value of magnetoelectric interaction was found for the sample where VACOFLUX48 was used as a ferromagnetic layer—10.25 V/(cm Oe) at resonance frequency of 206.36 kHz. This fact makes this structure very promising for development of high-sensitive sensors of alternating magnetic field and autonomous power sources.     

Tunable coercivity in perpendicular (CoFe/Tb)n/CoFe multilayers

Magnetic coercivity and anisotropy have been investigated in amorphous Co₅₀Fe₅₀t/Tb t multilayers with perpendicular anisotropy. The thin CoFe layer does not crystallize when sandwiched between Tb layers. The saturation magnetization M_s (~ 10⁶ A/m) and perpendicular magnetic anisotropy constant K_u (~ 10⁵ J/m³) combined with low coercivity μ₀H_c (10-10² mT) have been obtained. These magnetic properties can be tuned. These amorphous multilayers could be designed to suit specific spintronic applications.     

Optimization of Spin-Valve Structure NiFe/Cu/NiFe/IrMn for Planar Hall Effect Based Biochips

This paper deals with the planar Hall effect (PHE) of Ta(5)/NiFe$(t_{rm F})$/Cu(1.2)/NiFe$(t_{rm P})$/IrMn(15)/Ta(5) (nm) spin-valve structures. Experimental investigations are performed for 50 $mu$m$times hbox{50} mu$m junctions with various thicknesses of free layer ( $t_{rm F} = 4, 8, 10, 12, 16, 26$ nm) and pinned layer ($t_{rm P} = 1, 2, 6, 8, 9, 12$ nm). The results show that the thicker free layers, the higher PHE signal is observed. In addition, the thicker pinned layers lower PHE signal. The highest PHE sensitivity $S$ of 196 $mu$V/(kA/m) is obtained in the spin-valve configuration with $t_{rm F} = 26$ nm and $t_{bf P} = 1$ nm. The results are discussed in terms of the spin twist as well as to the coherent rotation of the magnetization in the individual ferromagnetic layers. This optimization is rather promising for the spintronic biochip developments.      

Positive and negative exchange bias in IrMn/NiFe bilayers

We present the observation of double shifted hysteresis loops in IrMn/NiFe bilayer structures. The bilayer structures were fabricated using high vacuum DC magnetron sputtering system. The hysteresis loops of the as deposited samples show the double shifted loops at NiFe layer thicknesses 5 nm and 6 nm, whereas the IrMn layer thickness was kept constant at 15 nm. The results were interpreted as the contribution of both positive and negative exchange bias fields. We suppose that this phenomenon is occurring due to the ferromagnetic (FM) layer exchange coupled with the antiferromagnetic (AFM) layer in two different magnetization directions. The ferromagnetic coupling of the interface spins in some regions of the film generates the hysteresis loop shift toward negative fields and antiferromagnetic coupling toward positive fields in the other regions. The double shifted hysteresis loops disappeared after magnetic field annealing of the samples above Neel temperature of the AFM layer. The X-ray diffraction patterns of the sample show the IrMn (111) crystalline growth necessary for the development of exchange bias field in this system. The correlation between the Magnetic Force Microscopy (MFM) domain structures of the as deposited sample and the magnetization reversal process of the double shifted hysteresis loops were discussed. The results suggest that the larger multidomain formation in the AFM layer with different magnetization directions was responsible for the positive and negative exchange bias fields in IrMn/NiFe bilayer samples.     

Subloop Magnetic Moment Reversal-Induced Recovery Effect in Exchange-Biased IrMn/Pt/Co/Pt Multilayers

For perpendicular exchange-biased IrMn/Pt/ Co/Pt multilayers with bidomain state, double hysteresis loops (DHLs) are achieved. It is found that exchange bias field and coercivity in full loop and two subloops’ training show different dependencies on the cycle number. Further studies show that the negative-biased (positive-biased) subloop measurement will influence training effect of the positive-biased (negative-biased) subloop, acting as a recovery process. This recovery procedure is different from the conventional ways, i.e., by applying a magnetic field perpendicular to the initial pinning direction or by leaving the sample alone for several days without any applied magnetic fields. This recovery effect can be explained by the re-rotation of antiferromagnet (AFM) spins after corresponding subloop magnetic moment reversal during the full loop measurement, which cannot happen during the subloop measurement.     

Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure

Two types of asymmetry in giant magnetoresistance (GMR) are observed which are not related to a training effect, but indicate different mechanisms of magnetization reversal of the pinned layer in spin-valve (SV) structures for ascending and descending field scans. GMR, exchange bias and coercivity in Si/Ta/NiFe/Cu/NiFe/IrMn/Ta SV-structures were investigated as functions of the thickness of the nonmagnetic spacer. The spacer thickness effects are discussed in correlation with layers microstructure and interfaces morphology variations.     

Dependence of Magnetoresistance on the Thickness of a Dusted Al Spacer Inserted in CoFe／Cu／CoFe Sandwiches

A series of CoFe(4nm)/Cu(X nm)Al(Y nm)/CoFe(6 nm） samples have been prepared at room temperature.An exponential decay of the GMR (Giant Magnetoresistance) with Y was observed for fixed X=2nm.The characteristic decay parameter of Al is obtained to be about 0.26nm,which is rather close to 1 monolayer for Al.A coexistant state of GMR and AMR (anisotropic magnetoresistance) was observed when Y=2nm.As the Cu spacer is replaced by Al layer,only AMR effect dominates.The experimental data further underline the important role played by the nonmagnetic spacers.     

NiO/CoFe双层膜的交换机制研究

通过改变制备NiO薄膜的氩气压和衬底材料,研究了NiO的结构、表面粗糙度对NiO/CoFe双层膜交换耦合场Hex的影响.实验表明完全自旋未补偿面与交换耦合场的产生没有直接联系,但交换耦合场Hex与界面状况密切相关.增大NiO的表面粗糙度会使交换耦合场Hex减小.应用随机场理论在考虑了实际界面存在的粗造度、杂质和缺陷等实际情况下,正确地预测了交换耦合场的数量级,而且对交换耦合场与铁磁层厚度tFM、反铁磁层厚度tAFM以及交换耦合场的温度特性等实验结果做出了合理解释.并应用随机场模型对反铁磁/铁磁双层膜中铁磁层矫顽力Hc与铁磁层厚度tFM的关系进行了定量计算,发现矫顽力Hc与铁磁层厚度1/tFM成正比,这一结果表明理论计算与我们的实验数据符合得很好.     

Mn成分对CoFe/Pt_(50)(Cr_(100-x)Mn_x)_(50)体系交换偏置的影响

采用直流磁控溅射的方法制备了CoFe/Pt-CrMn交换偏置体系,反铁磁的Pt-CrMn是利用[Pt/CrMn]n多层膜并经过300℃、2h的退火获得。通过调整Mn的成分,系统地研究了体系交换偏置场的变化。获得了钉扎性能良好的L10相反铁磁钉扎材料Pt-CrMn,即CoFe/Pt50(Cr88Mn12)50钉扎体系,其界面交换耦合能为0.22×10-7J/cm2,截止温度(blocking temperature)为480℃。     

Preparation of CoFe2O4/CoFe Particles with Broadband Microwave Absorption by Hydrogen Reduction

Journal of Superconductivity and Novel Magnetism - In this work, CoFe2O4/CoFe particles were prepared by two steps methods of ethylene glycol solvothermal and hydrogen reduction. The structure and...     

Co-Firing Characteristics of Cordierite Tapes with Ag/Pd for High Frequency Chip Inductors

As a new electronic material, low-temperature sintering, low-dielectric cordierite tapes exhibit great potential in the manufacturing of high frequency inductors. While the co-firing of cordierite dielectric material with conductive metal in lower sintering temperature is always a difficulty, and it directly affects the practical application of the inductors. In this paper, the prepared cordierite tapes with low-sintering temperature, low dielectric constant, and low losses were used as matrix material, and the co-firing characteristics of cordierite tapes with Ag/Pd was preliminary studied to investigate the feasibility in the manufacturing process. Deformation, pores, and delaminations are three main defects of the co-fired samples. With an Al₂O₃ powders and press blocks assisted process, good co-firing effect of cordierite tapes with Ag/Pd can be obtained at 900 °C. The co-firing interface of cordierite tape and Ag/Pd is very dense and no obvious element migration is detected. The paper is contributed to the manufacture of high frequency inductors.     

高频多层片式电感器介质材料的研究

研究了低温烧结Ｂ_２Ｏ_３－Ｐ_２Ｏ_５－ＭｇＯ－Ａｌ_２Ｏ_３－ＳｉＯ_２体系的微晶玻璃,及其析晶温度和析晶相特性,实验结果表明：该材料具有低的介电常数和电介质损耗,这种介质能在低于１０００℃的温度下与Ａｕ,Ａｇ／Ｐｂ,Ｃｕ等电极共烧,是一种较理想的高频多层片式电感器介质材料．     

Direct Imaging of Cross-sectional Magnetization Reversal in the Exchange biased CoFeB/IrMn Bilayer

正Magnetoelectronic devices have been widely used in magnetic storage and sensor.The pinned ferromagnetic layer with a unidirectional magnetic anisotropy is an important reference layer in the devices.Ferromagnetic material is pinned by antiferromagnetic material at the interface through exchange     

CoFe/Cu多层膜巨磁阻效应的研究

采用直流磁控溅射制备了多层膜Ta/缓冲层/[Co95Fe5/Cu]×12/Co95Fe5/Ta。实验发现,多层膜的磁阻性能受到缓冲层材料、各子层厚度以及退火处理的影响。采用优化的多层膜结构:Ni65Fe15Co20缓冲层厚8 nm、CoFe层厚1.55 nm、Cu层厚2.4nm,沉积态薄膜GMR值达到7.6%;而在外加磁场79.6×103A/m下,250℃保温2 h退火处理后,多层膜的GMR值进一步提高到11.9%,磁滞从18.7×102A/m降低到796 A/m。