双固相外延技术及高性能1μmCMOS／SOS器件的研究

本文较为详细地介绍了能有效地改善ＳＯＳ材料结晶质量的双固相外延ＤＳＰＥ工艺，给出了优化的工艺条件．通过比较用ＤＳＰＥ及普通ＳＯＳ材料制作的ＣＭＯＳ／ＳＯＳ器件和电路的特性可以看出，采用ＤＳＰＥ工艺能显著改善ＳＯＳ材料的表面结晶质量，应用ＤＳＰＥ工艺在硅层厚度为３５０ｎｍ的ＳＯＳ材料上成功地研制出了沟道长度为１μｍ的高性能ＣＭＯＳ／ＳＯＳ器件和电路，其巾ＮＭＯＳＦＥＴ及ＰＭＯＳＦＥＴ的泄漏电流分别为２．５ｐＡ和１．５ｐＡ，１９级ＣＭＯＳ／ＳＯＳ环形振荡器的单级门延迟时间为３２０ｐｓ．     

亚微米BiCMOS工艺技术

ＢｉＣＭＯＳ是双极的速度和驱动能力与ＣＭＯＳ的高密度和低功耗的结合。考虑到功耗原因，ＢｉＣＭＯＳ器件主要以ＣＭＯＳ为主。因此，双极器件通常并入ＣＭＯＳ核心工艺流程。当器件尺寸减小时，双极和ＣＭＯＳ技术显得愈发相似。本文例举了０．８μｍ和０．５μｍ的技术论点，ＢｉＣＭＯＳ电路与ＣＭＯＳ相比，成本稍有增加，但其性能提高一倍。     

亚微米BiCMOS工艺技术

ＢｉＣＭＯＳ是双极速度和驱动能力与ＣＭＯＳ的高密度和低功耗的结合。考虑到功耗原因，ＢｉＣＭＯＳ器件主要以ＣＭＯＳ为主，因此，双极器件通常并入ＣＭＯＳ核心工艺流程。当器件尺寸减小时，双极和ＣＭＯＳ的技术显得愈发相似。本文列举了０．８μｍ和０．５μｍ的技术论点。ＢｉＣＯＳ电路与ＣＭＯＳ相比，成本稍高但其性能提高一倍。     

短沟道CMOS／SIMOX器件与电路的制造

本文简要介绍短沟道ＣＭＯＳ／ＳＩＭＯＸ器件与电路的研制。在自制的ＳＩＭＯＸ材料上成功地制出了沟道长度为１．０μｍ的高性能全耗尽ＳＩＭＯＸ器件和１９级ＣＭＯＳ环形振荡器。Ｎ管和Ｐ管的泄漏电流均小于１×１０－１２Ａ／μｍ，在电源电压为５Ｖ时环振电路的门延迟时间为２８０ｐｓ。     

薄膜SOI／CMOS的SPICE电路模拟

鉴于ＳＰＩＣＥ是目前世界上广泛采用的通用电路模拟程序，具具有可扩展模型的灵活性，我们通过修改ＳＰＩＣＥ源程序把新器件模型－－ＳＯＩＭＯＳＦＥＴ模型移植入ＳＰＩＣＥ中，通过我们的模拟工作，证实了我们模型的正确性和电路实用性，分析了器件参数对ＳＯＩ／ＣＭＯＳ电路速率的影响，这些结论可以很好地指导电路设计和工艺实践。     

CMOS／SOI电路模拟与参数提取

ＳＯＩ－ＭＯＳＦＥＴ主要模型参数得一致的提取，因而该模型嵌入ＳＰＩＣＥ后能保证ＣＭＯＳ／ＳＯＩ电路的正确模拟工作，从ＣＭＯＳ／ＳＯＩ器件和环振电路的模拟结果和实验结果看，两者符合得较好，说明我们所采用的ＳＯＩ ＭＯＳＦＥＴ器件模型及其参数提取都是成功的。     

深亚微米薄膜CMOS／SOI电路的集成器件线路模拟

开发了适用于薄膜亚微米、深亚微米ＣＭＯＳ／ＳＯＩ电路的集成器件线路模拟软件，该模拟软件采用集成数值模型，将薄膜ＳＯＩ器件的数值模拟与电路模拟有机地结合在一起，实现了薄膜亚微米、深亚微米ＣＭＯＳ／ＳＯＩ电路的精确数值模拟，利用这一软件较为详细地分析了硅层厚度为５０￣４００ｎｍ、沟道长度为０．１５￣１．０ｕｍ的ＣＭＯＳ／ＳＯＩ环形振荡器电路，使我们对深亚微米薄膜ＣＭＯＳ／ＳＯＩ环振的特性及工作机理了较     

CMOS／SOI的高温特性分析

采用ＳＩＭＯＸ和ＢＥＳＯＩ材料制作了ＣＭＯＳ倒相器电路，在２５￣２００℃的不同温度下测量了ＰＭＯＳ和ＮＭＯＳ的亚阈特性曲线，实验结果显示，薄膜全耗尽ＩＭＯＸ器件的阈值电压和泄漏电流随温度的变化小于厚膜ＢＥＳＯＩ器件。     

一种新颖的电路工作点求解方法

介绍了一种基于数学优化并采用设计方程评估电路性能的ＣＭＯＳ单元模拟电路的自动综合技术。它采用一种新颖的“纹波推进法”来确定电路的静态工作点。并用较高精度的小尺寸ＭＯＳ器件评估器求解ＭＯＳ器件的电学参数。利用本方法实现的几种ＣＭＯＳ单元电路的自动综合程序已经集成到复旦模拟电路自动化设计系统（ＦＤＡＡＤＳ）中。     

高速BiCMOS工艺研究

研究开发了一种准２μｍ高速ＢｉＣＭＯＳ工艺，采用自对准双埋双阱及外延结构．外延层厚度为２．０～２．５μｍ，器件间采用多晶硅缓冲层局部氧化（简称ＰＢＬＯＣＯＳ）隔离，双极器件采用多晶硅发射极（简称ＰＳＥ）晶体管．利用此工艺已试制出ＢｉＣＭＯＳ２５级环振电路，在负载电容ＣＬ＝０．８ｐＦ条件下，平均门延迟时间ｔｐｄ＝０．８４ｎｓ，功耗为０．３５ｍＷ／门，驱动能力为０．６２ｎｓ／ｐＦ．明显优于ＣＭＯＳ门．     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.