共查询到19条相似文献,搜索用时 140 毫秒
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在Si和外延层之间使用一层薄金属层作为高效反射镜的所谓"镜面衬底",不但有助于提高芯片的出光效率,同时把键合温度降低到300℃以下。利用Au/In合金的方法,来实现用于高亮LED的Si片与AlGaInP四元外延片的键合。实验表明,在温度为250℃时,利用Au/In作为焊料,Si片与AlGaInP四元外延片可以实现比较好的键合,键合面可以达到60%。通过研磨减薄、X-ray测试和扫描电镜(SEM)测试得出键合面的界面特性,通过能谱分析得出键合面的物质分别为AuIn2和AuIn,实验测试得出此时Au的原子数占33.31%,In的原子数占36.64%。 相似文献
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压阻加速度计的Au-Si共晶键合 总被引:3,自引:1,他引:3
通过将压阻加速度计上帽与结构片的键合 ( 36 5℃保温 10min) ,再进行下帽与结构片的键合 ( 380± 10℃保温2 0min) ,成功进行了三层键合 .测得的键合强度约为 2 30MPa.硅片 基体 /SiO2 /Cr/Au层和硅片之间键合时 ,SiO2 溶解而形成CrSi2 硅化物 .共晶反应因Cr层而被推迟 ,键合温度高出共晶温度 2 0℃左右 ,从而避免了由于Au元素向硅中扩入而造成的污染 ,进而避免可能造成的对集成微电子器件性能的影响 .试验还证明硅基体 SiO2 /Cr/Au/Poly Si/Au键合层结构设计模型也遵循这一键合过程中的原子扩散理论. 相似文献
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本文采用Si/Si直接键合制备p~+/n~-、n~-/n~-结构的工艺原理及方法。通过实验,摸索出了一种有效的表面清洗-高温处理Si/Si键合工艺;采用该工艺制出了p~+/n~-、n~-/n~-样片;对键合的微观结构、键合强度、杂质分布及电接触特性进行了检测。 相似文献
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《微纳电子技术》2019,(5):402-408
研究了陶瓷外壳不同厚度Ni/Pd/Au镀层的键合可靠性,并分析了金丝球焊、硅铝丝楔焊和粗铝丝楔焊经300℃不同时间贮存后键合强度变化及键合失效模式变化,并与Ni/Au镀层键合进行了对比。研究结果表明,随着Au层厚度的增加,相同键合参数、相同镀层的金丝球焊的键合强度一致性有明显提升,随高温贮存时间增加,Ni/Pd/Au镀层的金丝键合强度一致性变差;相同实验条件下、不同镀层外壳的硅铝丝键合强度基本一致,300℃、1 h贮存后硅铝丝键合强度降低,随着高温贮存时间的增加,硅铝丝键合强度变化不大;随Au层厚度的增加,粗铝丝楔焊键合强度一致性变差,且失效模式主要为键合点脱落。 相似文献
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通过将压阻加速度计上帽与结构片的键合(365℃保温10min),再进行下帽与结构片的键合(380±10℃保温20min),成功进行了三层键合.测得的键合强度约为230MPa.硅片-基体/SiO2/Cr/Au层和硅片之间键合时,SiO2溶解而形成CrSi2硅化物.共晶反应因Cr层而被推迟,键合温度高出共晶温度20℃左右,从而避免了由于Au元素向硅中扩入而造成的污染,进而避免可能造成的对集成微电子器件性能的影响.试验还证明硅基体-SiO2/Cr/Au/Poly-Si/Au键合层结构设计模型也遵循这一键合过程中的原子扩散理论. 相似文献
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利用射频磁控溅射方法,制成纳米SiO2层厚度一定而纳米Si层厚度不同的纳米(SiO2/Si/SiO2)/p-Si结构和纳米(SiO2∶Al/Si/SiO2∶Al)/p-Si结构,用磁控溅射制备纳米SiO2∶Al时所用的SiO2/Al复合靶中的Al的面积百分比为1%.上述两种结构中Si层厚度均为1—3nm,间隔为0.2nm.为了对比研究,还制备了Si层厚度为零的样品.这两种结构在900℃氮气下退火30min,正面蒸半透明Au膜,背面蒸Al作欧姆接触后,都在正向偏置下观察到电致发光(EL).在一定的正向偏置下,EL强度和峰位以及电流都随Si层厚度的增加而同步振荡,位相相同.但掺Al结构的发光强度普遍比不掺Al结构强.另外,这两种结构的EL具体振荡特性有明显不同.对这两种结构的电致发光的物理机制和SiO2中掺Al的作用进行了分析和讨论. 相似文献
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Jing E. Xiong B. Wang Y. 《Electronics Packaging Manufacturing, IEEE Transactions on》2010,33(1):31-37
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提出利用Au/Au直接键合制作高亮度全方位反光镜(ODR)LED的新工艺。工艺采用Si做转移衬底,氧化铟锡(ITO)做窗口层和缓冲层,在0.35mPa压力,260°C的低温下实现Au/Au固相直接键合。直接键合后,Al-GaInP有源区与Si衬底结合牢固完整,保证了全方位反光镜的性能。在正向电流20mA下,键合ODR结构LED的正向压降是常规吸收衬底LED的80%,光输出功率和流明效率是常规吸收衬底LED的1.5倍和2.1倍。 相似文献
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A fluxless process of bonding large silicon chips to ceramic packages has been developed using a Au-Sn eutectic solder. The
solder was initially electroplated in the form of a Au/Sn/Au multilayer structure on a ceramic package and reflowed at 430°C
for 10 min to achieve a uniform eutectic 80Au-20Sn composition. A 9 mm × 9 mm silicon chip deposited with Cr/Au dual layers
was then bonded to the ceramic package at 320°C for 3 min. The reflow and bonding processes were performed in a 50-mTorr vacuum
to suppress oxidation. Therefore, no flux was used. Even without any flux, high-quality joints were produced. Microstructure
and composition of the joints were studied using scanning electron microscopy with energy-dispersive x-ray spectro- scopy.
Scanning acoustic microscopy was used to verify the joint quality over the entire bonding area. To employ the x-ray diffraction
method, samples were made by reflowing the Au/Sn/Au structure plated on a package. This was followed by a bonding process,
without a Si chip, so that x-rays could scan the solder surface. Joints exhibited a typical eutectic structure and consisted
of (Au,Ni)Sn and (Au,Ni)5Sn phases. This novel fluxless bonding method can be applied to packaging of a variety of devices on ceramic packages. Its
fluxless nature is particularly valuable for packaging devices that cannot be exposed to flux such as sensors, optical devices,
medical devices, and laser diodes. 相似文献
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Symonds C. Dion J. Sagnes I. Dainese M. Strassner M. Leroy L. Oudar J.-L. 《Electronics letters》2004,40(12):734-735
1.55 /spl mu/m room-temperature continuous-wave operation of a high performance optically pumped vertical external cavity surface emitting laser is reported. The structure includes an active region with strain compensated quantum wells, and a broadband SiN/sub x//Si/Au Bragg reflector transferred on an Si substrate by Au/In dry bonding. Output power of up to 45 mW is achieved at 0/spl deg/C, and continuous-wave operation is observed up to 45/spl deg/C. 相似文献
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Si nanowires (Si-NWs) were fabricated by a simple process that consists of deposition of Au thin films, annealing of the Au films to form porous structure and Si wet-etching using the kinetically appearing porous Au films as a template. The deformation behavior of the Au thin films was investigated by scanning electron microscopy and atomic force microscopy. The nanohole diameter and density of the Au films can be controlled by selecting Au film thickness, annealing temperature and annealing time. The formation mechanism of these porous Au films can be explained by a model that consists of nanohole formation at the grain boundaries of the Au films and ridge formation by Au atom diffusion to the hole periphery. The ridge structure suppresses further deformation of the Au films and keeps the nanohole structure kinetically stable. When a thermal energy larger than the activation energy to destroy the ridge structure is supplied, it transforms to the island structure. 相似文献
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热超声倒装焊在制作大功率GaN基LED中的应用 总被引:2,自引:0,他引:2
设计了适合于倒装的大功率GaN基LED芯片结构,在倒装基板硅片上制作了金凸点,采用热超声倒装焊接(FCB)技术将芯片倒装在基板上.测试结果表明获得的大面积金凸点连接的剪切力最高达53.93 g/bump,焊接后的GaN基绿光LED在350 mA工作电流下正向电压为3.0 V.将热超声倒装焊接技术用于制作大功率GaN基LED器件,能起到良好的机械互连和电气互连. 相似文献
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J. Y. Tsai C. W. Chang C. E. Ho Y. L. Lin C. R. Kao 《Journal of Electronic Materials》2006,35(1):65-71
The microstructures of the eutectic Au20Sn (wt.%) solder that developed on the Cu and Ni substrates were studied. The Sn/Au/Ni
sandwich structure (2.5/3.75/2 μm) and the Sn/Au/Ni sandwich structure (1.83/2.74/5.8 μm) were deposited on Si wafers first.
The overall composition of the Au and the Sn layers in these sandwich structures corresponded to the Au20Sn binary eutectic.
The microstructures of the Au20Sn solder on the Cu and Ni substrates could be controlled by using different bonding conditions.
When the bonding condition was 290°C for 2 min, the microstructure of Au20Sn/Cu and Au20Sn/Ni was a two-phase (Au5Sn and AuSn) eutectic microstructure. When the bonding condition was 240°C for 2 min, the AuSn/Au5Sn/Cu and AuSn/Au5Sn/Ni diffusion couples were subjected to aging at 240°C. The thermal stability of Au20Sn/Ni was better than that of Au20Sn/Cu.
Moreover, less Ni was consumed compared to that of Cu. This indicates that Ni is a more effective diffusion barrier material
for the Au20Sn solder. 相似文献