Diffusion emission model for solid-state photon-enhanced thermionic emission solar energy converters

Solid-state photon-enhanced thermionic emission (PETE) solar energy converters are new devices that can directly convert solar energy into electrical power at elevated temperatures. This study proposes a new solid-state PETE device structure with a p-type doped semiconductor as the absorber. A model based on a 1D steady-state continuity equation is presented to simulate the diffusion and emission of photogenerated carriers and to calculate the efficiencies. This model can evaluate the effect of device structure and material parameters on performance and efficiency. Calculation results show that the new device is more efficient compared with the original device. A longer electron diffusion length is favourable for enhancing efficiency. Moreover, the optimal absorber thickness is predicted. Our analyses also show that the front interface strongly affects conversion efficiency, which emphasises the need to reduce interface recombination losses. The results of this study may serve as bases for the optimum design of practical solid-state PETE devices.     

Electronic and thermal transport in hot carrier solar cells with low-dimensional contacts

Hot carrier solar cells are a third generation solar cell device where electrons and holes, heated by solar radiation, are removed from the absorber via low-dimensional energy selective contacts before they can thermalise to the band edge. Here, a new model is presented for calculating the performance of these devices, which takes into account the energy spectrum of the contacts. It is shown that efficiency is maximised with a certain ideal number of contacts and that the energy spectra of these should be narrow.     

Detailed balance efficiency limits with quasi-Fermi levelvariations [QW solar cell]

A central assumption in detailed balance efficiency limit calculations has been that the light generated carriers are collected by drift transport processes and have an infinite mobility, giving rise to constant quasi-Fermi levels (RFLs) across the solar cell. However, recent experimental and theoretical results for quantum well (QW) devices indicate that the QFLs need not be constant across the device. It is shown in this paper that transport mechanisms which cause a variation in the difference between the electron and hole QFLs give an increase in the limiting efficiency compared to previous detailed balance calculations. Further, QW solar cells which employ hot carrier transport across a well will have an efficiency limit in excess of a tandem solar cell while using the same number of semiconductor materials     

The limiting efficiency of silicon solar cells under concentrated sunlight

The intrinsic limits on the energy conversion efficiency of silicon solar cells when used under concentrated sunlight are calculated. It is shown that Auger recombination processes are even more important under concentrated sunlight than nonconcentrated sunlight. However, light trapping can be far more effective under concentrated light due to the better defined direction of incident light. As a result of these effects, the limiting efficiency lies in tile 36-37-percent range regardless of concentration ratio compared to the limiting value of 29.8 percent for a nonconcentrating cell with isotropic response.     

Effects of the compositional ratio distribution with sulfurization temperatures in the absorber layer on the defect and surface electrical characteristics of Cu2ZnSnS4 solar cells

Although Cu₂ZnSnS₄ (CZTS) has attracted attention as an alternative absorber material to replace CuInGaSe₂ (CIGS) in solar cells, the current level of understanding of its characteristic loss mechanisms is not sufficient for achieving high power conversion efficiency. In this study, which aimed to minimize the characteristic losses across the devices, we examined the relations between the compositional ratio distribution in the absorber layer, subsequent defect formation, and surface electrical characteristics. A high‐temperature sulfurization process was used to improve the crystallinity of the absorber layer, which increased the uniformity of the compositional ratio distribution and consequently suppressed the formation of a ZnS secondary phase on the CZTS/MoS₂ interface. Because defects and defect clusters generated in the absorber layer are shallower when the compositional ratio distribution is uniform, the electron‐hole recombination loss is reduced. These characteristics were confirmed by measuring the defect energy level using admittance spectroscopy and by analyzing the surface potential and current characteristics. These measurements revealed that improving the compositional ratio distribution suppresses the formation of deep‐level defects and reduces the rate of carrier recombination. In addition, improving the compositional ratio distribution substantially contributes to improving the series resistance and short circuit current density characteristics. Copyright © 2015 John Wiley & Sons, Ltd.     

Comparison of device performance and measured transport parameters in widely‐varying Cu(In,Ga) (Se,S) solar cells

We report the results of an extensive study employing numerous methods to characterize carrier transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers were fabricated by diverse process methods in multiple laboratories. This collection of samples exhibits a wide variation of morphologies, compositions, and solar power conversion efficiencies. An extensive characterization of transport properties is reported here—including those derived from capacitance–voltage, admittance spectroscopy, deep level transient spectroscopy, time‐resolved photoluminescence, Auger emission profiling, Hall effect, and drive level capacitance profiling. Data from each technique were examined for correlation with device performance, and those providing indicators of related properties were compared to determine which techniques and interpretations provide credible values for transport properties. Although these transport properties are not sufficient to predict all aspects of current‐voltage characteristics, we have identified specific physical and transport characterization methods that can be combined using a model‐based analysis algorithm to provide a quantitative prediction of voltage loss within the absorber. The approach has potential as a tool to optimize and understand device performance irrespective of the specific process used to fabricate the CIGSS absorber layer. Copyright © 2005 John Wiley & Sons, Ltd.     

Boundary condition model for the simulation of organic solar cells

Organic solar cells (OSCs) are promising photovoltaic devices to convert solar energy into electrical energy. Their many advantages such as lightweight, flexibility and low manufacturing costs are intrinsic to the organic/polymeric technology. However, because the performance of OSCs is still not competitive with inorganic solar cells, there is urgent need to improve the device performance using better designs, technologies and models. In this work, we focus on developing an accurate physics-based model that relates the charge carrier density at the metal-organic boundaries to the current density in OSCs. This analysis is based on our previous studies on single-carrier and bipolar diodes. The model for the boundary condition of the charge carrier density at the interfaces of OSCs follows a power-law function with the current density, both in dark and under illumination. Simulated current-voltage characteristics are verified with experimental results. The numerical simulations of the current-voltage characteristics of OSCs consider well-established models for the main physical and optical processes that take place in the device: light absorption and generation of excitons, dissociation of excitons into free charge carriers, charge transport, recombination and injection-extraction of free carriers. Our analysis provides important insights on the influence of the metal-organic interfaces on the overall performance of OSCs. The model is also used to explain the anomalous S-shape current-voltage curves found in some experimental data.     

Improved performance of Ge‐alloyed CZTGeSSe thin‐film solar cells through control of elemental losses

Nanocrystal‐based Cu₂Zn(Sn_yGe_1‐y)(S_xSe_4‐x) (CZTGeSSe) thin‐film solar cell absorbers with tunable band gap have been prepared. Maximum solar‐conversion total area efficiencies of up to 9.4% are achieved with a Ge content of 30 at.%. Improved performance compared with similarly processed films of Cu₂ZnSn(S_xSe_4‐x) (CZTSSe, 8.4% efficiency) is achieved through controlling Ge loss from the bulk of the absorber film during the high‐temperature selenization treatment, although some Ge loss from the absorber surface is still observed following this step. Despite limitations imposed by elemental losses present at the absorber surface, we find that Ge alloying leads to enhanced performance due to increased minority charge carrier lifetimes as well as reduced voltage‐dependent charge carrier collection. Copyright © 2013 John Wiley & Sons, Ltd.     

Influence of absorber doping in a-SiC：H/a-Si：H/a-SiGe：H solar cells

This work deals with the design evaluation and influence of absorber doping for a-Si:H/a-SiC:H/a-SiGe:H based thin-film solar cells using a two-dimensional computer aided design (TCAD) tool. Various physical parameters of the layered structure, such as doping and thickness of the absorber layer, have been studied. For reliable device simulation with realistic predictability, the device performance is evaluated by implementing necessary models (e.g., surface recombinations, thermionic field emission tunneling model for carrier transport at the heterojunction, Schokley-Read Hall recombination model, Auger recombination model, bandgap narrowing effects, doping and temperature dependent mobility model and using Fermi-Dirac statistics). A single absorber with a graded design gives an efficiency of 10.1% for 800 nm thick multiband absorption. Similarly, a tandem design shows an efficiency of 10.4% with a total absorber of thickness of 800 nm at a bandgap of 1.75 eV and 1.0 eV for the top a-Si and bottom a-SiGe component cells. A moderate n-doping in the absorber helps to improve the efficiency while p doping in the absorber degrades efficiency due to a decrease in the V_OC (and fill factor) of the device.     

Carrier Transport Enhancement Mechanism in Highly Efficient Antimony Selenide Thin-Film Solar Cell

Exhibiting outstanding optoelectronic properties, antimony selenide (Sb₂Se₃) has attracted considerable interest and has been developed as a light absorber layer for thin-film solar cells over the decade. However, current state-of-the-art Sb₂Se₃ devices suffer from unsatisfactory “cliff-like” band alignment and severe interface recombination loss, which deteriorates device performance. In this study, the heterojunction interface of an Sb₂Se₃ solar cell is improved by introducing effective aluminum (Al³⁺) cation into the CdS buffer layer. Then, the energy band alignment of Sb₂Se₃/CdS:Al heterojunction is modified from a “cliff-like” structure to a “spike-like” structure. Finally, heterojunction interface engineering suppresses recombination losses and strengthens carrier transport, resulting in a high efficiency of 8.41% for the substrate-structured Sb₂Se₃ solar cell. This study proposes a facile strategy for interfacial treatment and elucidates the related carrier transport enhancement mechanism, paving a bright avenue to overcome the efficiency bottleneck of Sb₂Se₃ thin-film solar cells.     

Ideal efficiency of monolithic,series‐connected multijunction solar cells

Two‐terminal, monolithic tandem solar cells represent the most interesting implementation of tThe multijunction photovoltaic array capable of very high efficiency. Radiative coupling among the cells, and between the cells and the substrate, along with series interconnection are features present in this approach. Their effect on efficiency is quantified for arrays with a small number of cells in the radiative limit and compared with the best experimental cells to assess their potential improvement. Finally, it is shown that they do not lower the limiting efficiency of the infinite tandem array, which is determined by the emission losses through the illuminated face. Copyright © 2002 John Wiley & Sons, Ltd.     

Optimization of a-Si:H absorber layer grown under a low pressure regime by plasma-enhanced chemical vapor deposition: Revisiting the significance of the p/i interface for solar cells

In this study, we revisited the significance of the p/i interface for hydrogenated amorphous silicon (a-Si:H) solar cells. Initially, intrinsic and extrinsic (p and n type) a-Si:H layers were grown in a low pressure regime (0.5–0.1 Torr) using the conventional RF plasma-enhanced chemical vapor deposition process and their opto-electronic properties were optimized for the fabrication of p–i–n a-Si:H solar cells. Subsequently, we obtained new insights in terms of the activation energy and band gap at the p/i interface in these solar cells. The absorber layers deposited at pressures of 0.23 Torr and 0.53 Torr had the highest photosensitivity with a band absorption edge at ~700 nm. Furthermore, the photosensitivity was shown to be correlated with the estimated diffusion length, which effectively defined the carrier transport within the solar cell layers. Moreover, the cell efficiency increased from 1.53% to 5.56% due to the improved p/i interface as well as the higher photosensitivity of the intrinsic/absorber layer.     

Lycopene-Based Bionic Membrane for Stable Perovskite Photovoltaics

Perovskite (PVSK) photovoltaics have been a promising field in the exploitation of renewable energy due to the fascinating performances of PVSK materials and devices. Although the efficiency is gradually approaching that of traditional solar cells, the stability is still a challenge. Hence, tomato lycopene, a botanic antioxidant, is introduced as a modification layer on the PVSK absorber layer to prevent moisture and oxygen erosion, for enhanced both intrinsic and environmental stabilities. This inserted protection layer can also interact with the PVSK material through carbon-halogen bonds and influence its crystallinity. Therefore, PVSK films are obtained with less defects and better intrinsic stability. The device achieved a champion outdoor efficiency at AM 1.5G more than 21% and its indoor efficiency at 1000 lux can reach 40.24%. In addition, the efficiency can keep almost 90% of the original value after exposure to wet oxygen ambience for 1000 h. The antioxidant gives a unique perspective towards enhancing the stability of solar cells     

Interface Engineering Enhances the Photovoltaic Performance of Wide Bandgap FAPbBr3 Perovskite for Application in Low-Light Environments

Underwater solar cells (UWSCs) provide an ideal alternative to the energy supply for long-endurance autonomous underwater vehicles. However, different from conventional solar cells situated on land or above water, UWSCs give preference to use wide bandgap semiconductors (≥1.8 eV) as light absorber to match underwater solar spectra. Among wide bandgap semiconductors, FAPbBr₃ perovskite is under prime consideration owing to its matching optical bandgap (≈2.3 eV), outstanding photoelectric properties, easier processability, etc. Unfortunately, for FAPbBr₃ solar cells, substantial interface defects greatly limit the charge carrier extraction efficiency, thus limiting the device performance, especially in underwater low-light environments. This study employs a molecular self-assembly strategy to effectively eliminate the interfacial defects. As a result, a great improvement in power conversion efficiency (PCE) from 6.44% to 7.49% is obtained, which is among the best efficiency reported for inverted FAPbBr₃ solar cells up to date. Besides, a champion PCE of 30% is obtained under 520 nm monochromatic light irradiation (4.8 mW cm⁻²). These results demonstrate that FAPbBr₃ solar cells present a tremendously promising application in UWSCs.     

Nonlinear analysis of surface-emitting distributed feedback lasers

An analysis of surface-emitting distributed feedback lasers under conditions above threshold is presented. The coupled-wave equations are integrated numerically using a self-consistent technique that includes the effects of gain saturation, carrier diffusion, antiguiding, and free carrier loss. The laser threshold current and slope efficiency are determined as a function of the strip length and p-layer thickness where it is found that the device efficiency can be very high. Antiguiding, which varies when the grating is mistuned with respect to the gain peak, influences the slope, threshold, and shape of the emission far field. Small variations in the longitudinal index of refraction are shown to affect the far-field intensity profile significantly     

Defect Modulation Doping

The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density as well as mobility. Modulation doping, a mechanism that exploits the energy band alignment at an interface between two materials to induce free charge carriers in one of them, is shown to circumvent the mobility restriction. Due to an alignment of doping limits by intrinsic defects, however, the carrier density limit cannot be lifted using this approach. Here, a novel doping strategy using defects in a wide bandgap material to dope the surface of a second semiconductor layer of dissimilar nature is presented. It is shown that by depositing an insulator on a semiconductor material, the conductivity of the layer stack can be increased by 7 orders of magnitude, without the necessity of high‐temperature processes or epitaxial growth. This approach has the potential to circumvent limits to both carrier mobility and density, opening up new possibilities in semiconductor device fabrication, particularly for the emerging field of oxide thin film electronics.     

Flexible Cu(In,Ga)Se2 solar cells with reduced absorber thickness

Reduction of the absorber thickness combined with deposition on a flexible substrate is a technically viable strategy to allow lower cost manufacturing of Cu(In,Ga)Se₂ solar modules. Flexible plastic substrates, however, require a low‐temperature deposition process and appropriate control of the band gap grading for achieving high efficiencies. In this work, we developed solar cells on polyimide films using evaporated Cu(In,Ga)Se₂ absorbers with thickness of 0.8–1.3 µm. The double Ga‐grading profile across the absorber thickness was modified by varying the maximum Cu excess at the end of the second stage or by adapting the In and Ga evaporation flux profiles during the growth process. By minimizing the Cu excess during the intermediate stage of the growth process, no loss in open circuit voltage and fill factor is observed compared with a device having a thicker absorber. Efficiency of 16.3% was achieved for cells with an absorber thickness of 1.25 µm. Insufficient absorption of photons in the long wavelength region is mainly responsible for current loss. By changing the In and Ga evaporation profiles, the shape and position of the Ga notch were effectively modified, but it did not lead to a higher device performance. Modifications of the Ga compositional profile could not help to significantly reduce absorption losses or increase charge carrier collection in absorbers with thickness below 1 µm. Changes of open circuit voltage and fill factor are mostly related to differences in the net acceptor density or the reverse saturation current rather than changes of the double Ga grading. Copyright © 2013 John Wiley & Sons, Ltd.     

Simulation and Optimization for System Integration of a Solar Thermoelectric Device

We established a three-dimensional (3D) finite-element model of a solar thermoelectric device (STED) based on high-performance thermoelectric materials and carried out performance analysis under different operating conditions. The effects of input energy, natural convection, radiation, contact resistance, and electric load on STED performance are taken into account. It is shown that heat losses and contact resistance have a significant impact on conversion efficiency. If contact resistance and all heat losses are neglected, the total STED efficiency can reach 9.95%.     

Secondary phase formation in Zn‐rich Cu2ZnSnSe4‐based solar cells annealed in low pressure and temperature conditions

Zn‐rich Cu₂ZnSnSe₄ (CZTSe) films were prepared by a two‐step process consisting in the DC‐magnetron sputtering deposition of a metallic stack precursor followed by a reactive anneal under a Se + Sn containing atmosphere. Precursor composition and annealing temperature were varied in order to analyze their effects on the morphological, structural, and optoelectronic properties of the films and solar cell devices. Raman scattering measurements show the presence of ZnSe as the main secondary phase in the films, as well as the presence of SnSe at the back absorber region of the films processed with lower Zn‐excess values and annealing temperatures. The ZnSe phase is found to accumulate more towards the surface of the absorber in samples with lower Zn‐excess and lower temperature annealing, while increasing Zn‐excess and annealing temperature promote its aggregation towards the back absorber region of the devices. These measurements indicate a strong dependence of these process variables in secondary phase formation and accumulation. In a preliminary optimization of both the composition and reactive annealing process, a solar cell with 4.8% efficiency has been fabricated, and potential mechanisms limiting device efficiency in these devices are discussed. Copyright © 2014 John Wiley & Sons, Ltd.     

Fill factor analysis of solar cells' current–voltage curves

After completion of the solar cell manufacturing process the current–density versus voltage curves (J(U) curves) are measured to determine the solar cell's efficiency and the mechanisms limiting the efficiency. An accurate and robust analysis of the measured curves is essential. In this work it is shown that fitting the two‐diode model is inappropriate to quantify recombination in the space charge region and ohmic losses due to series resistance. Three fill factors, namely the fill factor of the illuminated J(U) curve, the pseudo fill factor of the sunsVoc curve and the ideal fill factor of the single diode model, are the base of a quick loss analysis that is evaluated in the present paper. It is shown that for an accurate analysis the distributed character of the series resistance and the network character of the solar cell cannot be neglected. An advanced current–voltage curve analysis including fill factors and fit is presented. Copyright © 2010 John Wiley & Sons, Ltd.