InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

In this work, we practically demonstrated spectrum‐splitting approach for advances in efficiency of photovoltaic cells. Firstly, a‐Si:H//c‐Si 2‐junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620 nm. Then, we improved the top cell property by employing InGaP cells instead of the a‐Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3‐junction spectrum‐splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c‐Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10 suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3‐junction spectrum‐splitting approach can be a promising candidate for highly efficient photovoltaic technologies. Copyright © 2016 John Wiley & Sons, Ltd.     

High voltage photovoltaic mini‐modules

This work describes the design, simulation, fabrication process, and characterization of high voltage photovoltaic mini‐modules using silicon on insulator (SOI) wafers. The mini‐modules are made of a number of small area photovoltaic cells (<1 mm²) monolithically connected in series. Isolation between cells is performed by means of anisotropic etching of the active layer of the SOI wafer. Measurements using standard sunlight (AM1·5 100 mW/cm²) confirm the viability of this technology to fabricate small area arrays showing open circuit voltages, V _oc, between 620 mV and 660 mV and photocurrent densities up to 22·3 mA/cm² for single cells of 0·225 mm² area and 10 µm active film thickness. Series connection scales up V _oc and the maximum power, P _m, from 625 mV and 21·2 µW, respectively, in a single cell to 103 V and 3·2 mW when 169 cells are connected in series in a 0·42 cm² module total area. Copyright © 2008 John Wiley & Sons, Ltd.     

C‐Si solar cell modules

In order to meet the rapidly growing demand for solar power photovoltaic systems which is based on public consciousness of global environmental issues, SHARP has increased the production of solar cells and modules over 10‐fold in the last 5 years. Silicon‐based technologies are expected to be dominant in the coming decade. In the course of an increase of the annual production scale to 1000 MW, the efficiency of modules will be improved and the thickness of wafers will be decreased and all this will lead to a drastic price reduction of PV systems. Copyright © 2005 John Wiley & Sons, Ltd.     

Life‐cycle assessment of photovoltaic modules: Comparison of mc‐Si,InGaP and InGaP/mc‐Si solar modules

A higher conversion efficiency of photovoltaic modules does not automatically imply a lower environmental impact, when the life‐cycle of modules is taken into account. An environmental comparison is carried out between the production and use phase, except maintenance, of an indium–gallium–phosphide (InGaP) on multicrystalline silicon (mc‐Si) tandem module, a thin‐film InGaP cell module and a mc‐Si module. The evaluation of the InGaP systems was made for a very limited industrial production scale. Assuming a fourfold reuse of the GaAs substrates in the production of the thin‐film InGaP (half) modules, the environmental impacts of the tandem module and of the thin‐film InGaP module are estimated to be respectively 50 and 80% higher than the environmental impact of the mc‐Si module. The energy payback times of the tandem module, the thin‐film InGaP module and the mc‐Si module are estimated to be respectively 5.3, 6.3 and 3.5 years. There are several ways to improve the life‐cycle environmental performance of thin‐film InGaP cells, including improved materials efficiency in production and reuse of the GaAs wafer and higher energy efficiency of the metalorganic chemical vapour deposition process. Copyright © 2003 John Wiley & Sons, Ltd.     

Round‐robin measurement intercomparison of c‐Si PV modules among Asian testing laboratories

Because of recent advances in the production and installation of photovoltaic (PV) systems, the international conformity of PV module performance measurement has become increasingly important. The increase in PV production sites is particularly significant in the Asian region. The present paper summarizes and discusses the results of a round‐robin intercomparison of crystalline silicon modules among national laboratories and certified testing laboratories in the Asian region conducted from 2009 to 2011. Most of the values of P_max measured at the different laboratories were within a ±2% range, although some P_max results showed differences of up to about 3%. This result is comparable to that obtained in the recent intercomparison among international laboratories. Possible sources of difference in the measured values of I_sc, V_oc, FF, and P_max are discussed, for further improvement of international conformity in PV measurement technologies. Copyright © 2012 John Wiley & Sons, Ltd.     

Numerical simulations of rear point‐contacted solar cells on 2.2 Ωcm p‐type c‐Si substrates

Rear surface of high‐efficiency crystalline silicon solar cells is based on a combination of dielectric passivation and point‐like contacts. In this work, we develop a 3D model for these devices based on 2.2 Ωcm p‐type crystalline silicon substrates. We validate the model by comparison with experimental results allowing us to determine an optimum design for the rear pattern. Additionally, the 3D model results are compared with the ones deduced from a simpler and widely used 1D model. Although the maximum efficiency predicted by both models is approximately the same, large deviations are observed in open‐circuit voltage and fill factor. 1D simulations overestimate open‐circuit voltage because Dember and electrochemical potential drops are not taken into account. On the contrary, fill factor is underestimated because of higher ohmic losses along the base when 1D analytical model is used. These deviations are larger for relatively low‐doped substrates, as the ones used in the experimental samples reported hereby, and poor passivated contacts. As a result, 1D models could mislead to too short optimum rear contact spacing. Copyright © 2013 John Wiley & Sons, Ltd.     

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

Fabricating single‐crystalline gallium nitride (GaN)‐based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal‐oxide‐semiconductor circuits, is a prerequisite for next‐generation high‐performance electronics and optoelectronics. However, the direct epitaxy of single‐crystalline GaN on a Si(100) substrate remains challenging due to the asymmetric surface domains of Si(100), which can lead to polycrystalline GaN with a two‐domain structure. Here, by utilizing single‐crystalline graphene as a buffer layer, the epitaxy of a single‐crystalline GaN film on a Si(100) substrate is demonstrated. The in situ treatment of graphene with NH₃ can generate sp³ C? N bonds, which then triggers the nucleation of nitrides. The one‐atom‐thick single‐crystalline graphene provides an in‐plane driving force to align all GaN domains to form a single crystal. The nucleation mechanisms and domain evolutions are further clarified by surface science exploration and first‐principle calculations. This work lays the foundation for the integration of GaN‐based devices into Si‐based integrated circuits and also broadens the choice for the epitaxy of nitrides on unconventional amorphous or flexible substrates.     

Bifacial concentrator Ag‐free crystalline n‐type Si solar cell

We report results obtained using an innovative approach for the fabrication of bifacial low‐concentrator thin Ag‐free n‐type Cz‐Si (Czochralski silicon) solar cells based on an indium tin oxide/(p⁺nn⁺)Cz‐Si/indium fluorine oxide structure. The (p⁺nn⁺)Cz‐Si structure was produced by boron and phosphorus diffusion from B‐ and P‐containing glasses deposited on the opposite sides of n‐type Cz‐Si wafers, followed by an etch‐back step. Transparent conducting oxide (TCO) films, acting as antireflection electrodes, were deposited by ultrasonic spray pyrolysis on both sides. A copper wire contact pattern was attached by low‐temperature (160°C) lamination simultaneously to the front and rear transparent conducting oxide layers as well as to the interconnecting ribbons located outside the structure. The shadowing from the contacts was ~4%. The resulting solar cells, 25 × 25 mm² in dimensions, showed front/rear efficiencies of 17.6–17.9%/16.7–17.0%, respectively, at one to three suns (bifaciality of ~95%). Even at one‐sun front illumination and 20–50% one‐sun rear illumination, such a cell will generate energy approaching that produced by a monofacial solar cell of 21–26% efficiency. Copyright © 2014 John Wiley & Sons, Ltd.     

Seasonal variations on energy yield of a‐Si,hybrid, and crystalline Si PV modules

This paper presents a study of long‐term outdoor performance of a‐Si and hybrid modules mounted in the same location over several years. The modules were also characterized indoors using standard measurement methods employing pulsed solar simulators at the European Solar Test Installation (ESTI). The present study is intended to contribute to future standards on energy rating by presenting a common procedure for correcting the outdoor performance measurements to standard test conditions and comparing the resulting module performance at real and laboratory conditions. A seasonal variation in output, higher in the summer and lower in the winter, suggests that the module performance improves due to annealing when the module temperature is higher. The total output energy per month for these two technologies and a reference c‐Si technology is also presented. Copyright © 2010 John Wiley & Sons, Ltd.     

Measurement and simulation of vibrations of PV‐modules induced by dynamic mechanical loads

The dynamic behavior of PV‐modules is analyzed by different methods. Outdoor measurements of the deflection show their dynamic behavior under wind loads and the correlation between wind velocity and mechanical deflection. Indoor tests were performed with acoustic excitation of the modules with monitoring of the deflection. The frequency range of the resonance frequencies of different modules was between 10 and 100 Hz. Numerical calculations, based on FEM‐modeling, yielded a very good agreement with the experimental results. Copyright © 2011 John Wiley & Sons, Ltd.     

High potential of thin (<1 µm) a‐Si: H/µc‐Si:H tandem solar cells

Silicon based thin tandem solar cells were fabricated by plasma enhanced chemical vapor deposition (PECVD) in a 30 × 30 cm² reactor. The layer thicknesses of the amorphous top cells and the microcrystalline bottom cells were significantly reduced compared to standard tandem cells that are optimized for high efficiency (typically with a total absorber layer thickness from 1.5 to 3 µm). The individual absorber layer thicknesses of the top and bottom cells were chosen so that the generated current densities are similar to each other. With such thin cells, having a total absorber layer thickness varying from 0.5 to 1.5 µm, initial efficiencies of 8.6–10.7% were achieved. The effects of thickness variations of both absorber layers on the device properties have been separately investigated. With the help of quantum efficiency (QE) measurements, we could demonstrate that by reducing the bottom cell thickness the top cell current density increased which is addressed to back‐reflected light. Due to a very thin a‐Si:H top cell, the thin tandem cells show a much lower degradation rate under continuous illumination at open circuit conditions compared to standard tandem and a‐Si:H single junction cells. We demonstrate that thin tandem cells of around 550 nm show better stabilized efficiencies than a‐Si:H and µc‐Si:H single junction cells of comparable thickness. The results show the high potential of thin a‐Si/µc‐Si tandem cells for cost‐effective photovoltaics. Copyright © 2010 John Wiley & Sons, Ltd.     

Effects of solar spectrum and module temperature on outdoor performance of photovoltaic modules in round‐robin measurements in Japan

The performance of six photovoltaic (PV) modules composed of polycrystalline silicon (pc‐Si), amorphous silicon (a‐Si), and hydrogenated amorphous silicon/crystalline silicon (a‐Si:H/c‐Si) modules was investigated at eight locations in Japan from August 2007 to December 2008. In addition, solar irradiance, solar spectrum, and module temperature were simultaneously measured in these round‐robin measurements. In this study, we evaluate quantitatively the effects of module temperature and solar spectrum on the performance of the PV modules as thermal factor (TF) and spectral factor (SF), respectively. Furthermore, we investigate the variation in module performance, which is converted into module performance under standard test conditions (STC) using the TF and SF. In the case of the pc‐Si modules, the variations in performance ratio under STC (PR_STC) for these modules range from 0.056 to 0.074 through the round‐robin measurements. The TF indicates that the contribution of module temperature to the variation in performance is large, between about 15 and 20%. However, the SF suggests that the contribution of solar spectrum is quite small, less than 3%. In the case of the a‐Si modules, the contribution of module temperature is about 8%. The performance is largely influenced by solar spectrum, more than 12% at its maximum. Consequently, the variations in the corrected PR_STC of the a‐Si modules are between 0.117 and 0.141. These large variations may result from the effects of thermal annealing and light soaking. The variation in PR_STC of the a‐Si:H/c‐Si module is similar to that of the pc‐Si modules. Copyright © 2010 John Wiley & Sons, Ltd.     

Thin Al2O3 passivated boron emitter of n‐type bifacial c‐Si solar cells with industrial process

We have presented thin Al₂O₃ (~4 nm) with SiN_x:H capped (~75 nm) films to effectively passivate the boron‐doped p⁺ emitter surfaces of the n‐type bifacial c‐Si solar cells with BBr₃ diffusion emitter and phosphorus ion‐implanted back surface field. The thin Al₂O₃ capped with SiN_x:H structure not only possesses the excellent field effect and chemical passivation, but also establishes a simple cell structure fully compatible with the existing production lines and processes for the low‐cost n‐type bifacial c‐Si solar cell industrialization. We have successfully achieved the large area (238.95 cm²) high efficiency of 20.89% (front) and 18.45% (rear) n‐type bifacial c‐Si solar cells by optimizing the peak sintering temperature and fine finger double printing technology. We have further shown that the conversion efficiency of the n‐type bifacial c‐Si solar cells can be improved to be over 21.3% by taking a reasonable high emitter sheet resistance. Copyright © 2017 John Wiley & Sons, Ltd.     

Dust‐induced shading on photovoltaic modules

The effect of dust on photovoltaic modules is investigated with respect to concentration and spectral transmittance. Samples were collected in the form of raw dust as well as accumulated dust on exposed sheets of glass at different tilt angles. Spectral transmittance of the samples was determined. Transmittance variation between top, middle and bottom was identified for samples collected at different inclinations, where the worst case was seen at a tilt angle of 30^o with a non‐uniformity of 4.4% in comparison with 0.2% for the 90° tilt. The measured data showed a decrease in transmittance at wavelengths <570 nm. Integrating this with measured spectral responses of different technologies demonstrates that wide band‐gap thin‐film technologies are affected more than, for example crystalline silicon technologies. The worst case is amorphous silicon, where a 33% reduction in photocurrent is predicted for a dust concentration of 4.25 mg/cm². Similarly, crystalline silicon and CIGS technologies are predicted to be less affected, with 28.6% and 28.5% reductions in photocurrent, respectively. The same procedure was repeated with varying Air Mass (AM), tilt angle and dust concentration values to produce a soiling ratio table for different technologies under different AM, tilt angle and dust concentration values. Copyright © 2012 John Wiley & Sons, Ltd.     

High‐efficiency black silicon interdigitated back contacted solar cells on p‐type and n‐type c‐Si substrates

This work demonstrates the high potential of Al₂O₃ passivated black silicon in high‐efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very low reflectance values, below 0.7% in the 300–1000 nm wavelength range, together with striking surface recombination velocities values of 17 and 5 cm/s on p‐type and n‐type crystalline silicon substrates, respectively, are reached. The simultaneous fulfillment of requirements, low reflectance and low surface recombination, paves the way for the fabrication of high‐efficiency IBC Si solar cells using black silicon at their front surface. Outstanding photovoltaic efficiencies over 22% have been achieved both in p‐type and n‐type 9‐cm² cells. 3D simulations suggest that efficiencies of up to 24% can be obtained in the future with minor modifications in the baseline fabrication process. Copyright © 2015 John Wiley & Sons, Ltd.     

The results of performance measurements of field‐aged crystalline silicon photovoltaic modules

This paper presents the results of electrical performance measurements of 204 crystalline silicon‐wafer based photovoltaic modules following long‐term continuous outdoor exposure. The modules comprise a set of 53 module types originating from 20 different producers, all of which were originally characterized at the European Solar Test Installation (ESTI), over the period 1982–1986. The modules represent diverse generations of PV technologies, different encapsulation and substrate materials. The modules electrical performance was determined according to the standards IEC 60891 and the IEC 60904 series, electrical insulation tests were performed according to the recent IEC 61215 edition 2. Many manufacturers currently give a double power warranty for their products, typically 90% of the initial maximum power after 10 years and 80% of the original maximum power after 25 years. Applying the same criteria (taking into account modules electrical performance only and assuming 2·5% measurement uncertainty of a testing lab) only 17·6% of modules failed (35 modules out of 204 tested). Remarkably even if we consider the initial warranty period i.e. 10% of P_max after 10 years, more than 65·7% of modules exposed for 20 years exceed this criteria. The definition of life time is a difficult task as there does not yet appear to be a fixed catastrophic failure point in module ageing but more of a gradual degradation. Therefore, if a system continues to produce energy which satisfies the user need it has not yet reached its end of life. If we consider this level arbitrarily to be the 80% of initial power then all indications from the measurements and observations made in this paper are that the useful lifetime of solar modules is not limited to the commonly assumed 20 year. Copyright © 2008 John Wiley & Sons, Ltd.     

Comparison of indoor and outdoor performance measurements of recent commercially available solar modules

The strong growth of the PV market is accompanied by an increasing number of “new” PV technologies and concepts now mature for commercialization. A correct calibration of these devices is in some cases very difficult, because indoor and outdoor performance measurements often lead to different results. In this paper we compare the indoor and outdoor performance measurements of a set of recent commercially available PV modules (conventional and high‐efficiency c‐Si, single‐, double‐, and triple‐junction thin film (TF) technologies) and we observe that the maximum power P_max of some devices measured indoors using our large area pulsed solar simulator is usually lower than the power measured outdoors under natural sunlight. The major effects which lead to these discrepancies are identified, as follows: (a) spectral mismatch errors, very significant for CdTe, and all a‐Si TF technologies; (b) measurement‐related sweep‐time effects, which seem to strongly influence the performance of high efficiency c‐Si devices and to a lesser extend of all a‐Si TF technologies; and (c) short‐time light‐soaking effects, which influence the performance of CIS and to a lesser extent CdTe. Copyright © 2010 John Wiley & Sons, Ltd.     

Laser‐fired contact optimization in c‐Si solar cells

In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermally grown silicon oxide (SiO₂), deposited phosphorus‐doped amorphous silicon carbide (a‐SiC_x/H(n)), aluminum oxide (Al₂O₃) and silicon nitride (SiN_x/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm² have been obtained. Copyright © 2011 John Wiley & Sons, Ltd.     

Evaluation of damp‐heat testing of photovoltaic modules

Temperature, temperature cycling, moisture, ultraviolet radiation, and negative bias voltage are considered as main degradation factors for photovoltaic modules by causing hydrolysis and photo‐degradation of polymeric components, corrosion of glass, and of metallic components like grids and interconnectors. Commercially produced photovoltaic modules with crystalline silicon cells were exposed to accelerated damp‐heat testing in the lab. Test temperatures were 75, 85, and 90 °C. The tests were continued until a final degradation state was reached (3500–7000 h). The degradation function could be modeled by a Boltzmann function allowing the determination of the time to failure (20% power loss). The time to failure as function of the test temperature follows Arrhenius relations allowing the evaluation of the activation energy of the dominating degradation process. These time‐transformation functions could be used for service life estimation. Electroluminescence pictures illustrate the degradation behavior and the differences of the modules, indicating no changes in the degradation mechanisms for the different temperatures. A procedure for the evaluation of outdoor operation conditions towards accelerated service life testing with respect to moisture impact is proposed. Copyright © 2016 John Wiley & Sons, Ltd.