Field Emission From Diamond and Silicon Carbide coated Silicon Field Emitters

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Silicon Deep Etching Techniques for MEMS Devices

Silicon deep etching technique is the key tabrication step in the development of MEMS. The mask selectivity and the lateral etching control are the two primary factors that decide the result of deep etching process. These two factors are studied in this paper. The experimental results show that the higher selectivity can be gotten when F- gas is used as etching gas and A1 is introduced as mask layer. The lateral etching problems can be solved by adjusting the etching condition, such as increasing the RF power, changing the gas composition and flow volume of etching machine.     

Kinetics of Dissolution and Isothermal Solidification for Gold-Enriched Solid–Liquid Interdiffusion (SLID) Bonding

This paper presents the development and characterization of a fluxless die-attach soldering process based on gold-enriched solid–liquid interdiffusion (SLID). Eutectic Au-Sn and pure Au were deposited by jet vapor deposition (JVD) onto two substrates, assembled in a sandwiched structure, and processed in a vacuum furnace using different temperatures and times. Microstructural characterization, based on scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) analysis, revealed the formation of sound joints governed by the interdiffusion of the main constituents. Kinetic studies for the dissolution and the isothermal solidification stages were conducted. Differential scanning calorimetry (DSC) revealed a solder joint that is thermally stable up to 498°C, thus demonstrating the effectiveness of using the SLID process for the production of joints which require a lower processing temperature compared with their remelting point. Based on these findings, the recommended final bonding parameters are processing temperature and time of 340°C (310°C < T _P < 340°C) and 5 min, respectively.     

Aluminum nitride for heatspreading in RF IC’s

To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC’s, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 μm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.     

Calculation Model for Current-voltage Relation of Silicon Quantum-dots-based Nano-memory

Based on the capacitive coupling formalism, an analytic model for calculating the drain currents of the quantum-dots floating-gate memory cell is proposed. Using this model, one can calculate numerically the drain currents of linear, saturation and subthreshold regions of the device with/without charges stored on the floating dots. The read operation process of an n-channel Si quantum-dots floating-gate nano-memory cell is discussed after calculating the drain currents versus the drain to source voltages and control gate voltages in both high and low threshold states respectively.     

Intermetallic Compound Formation Mechanisms for Cu-Sn Solid–Liquid Interdiffusion Bonding

Cu-Sn solid?Cliquid interdiffusion (SLID) bonding is an evolving technique for wafer-level packaging which features robust, fine pitch and high temperature tolerance. The mechanisms of Cu-Sn SLID bonding for wafer-level bonding and three-dimensional (3-D) packaging applications have been studied by analyzing the microstructure evolution of Cu-Sn intermetallic compounds (IMCs) at elevated temperature up to 400°C. The bonding time required to achieve a single IMC phase (Cu₃Sn) in the final interconnects was estimated according to the parabolic growth law with consideration of defect-induced deviation. The effect of predominantly Cu metal grain size on the Cu-Sn interdiffusion rate is discussed. The temperature versus time profile (ramp rate) is critical to control the morphology of scallops in the IMC. A low temperature ramp rate before reaching the bonding temperature is believed to be favorable in a SLID wafer-level bonding process.     

Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector

The theoretical spectral response formula of the N+-N-I-P+ silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of silicon photodetector are obtained by numerical calculation and simulation. Under the condition of these optimum structure parameters, the responsivity of the silicon photodetector will be 0.48 A/W at 650 nm.     

Silicon multiplexers for 1 × 576 HgCdTe IR focal-plane arrays

Two versions of silicon 1D multiplexer for 1 × 576 IR focal-plane arrays are designed, fabricated, and tested. The version LM-1 employs a direct-injection input circuit; the version LM-2 contains a buffered direct-injection circuit. They are intended for use with HgCdTe n ⁺-p photodiodes operating in the wavelength ranges 8–14 and 3–5 μm, the minimum reverse diode resistance being 200 kΩ. The multiplexers ensure high uniformity of photodiode bias voltage; they are provided with a switched storage capacitance, which allows operation at different signal, background, and dark currents. Clocked at 3.5 MHz, they have an integration time of 40 μs and can read out 25 full-size (768 × 576) frames per second.     

Vapor-Assisted Surface Activation Method for Homo- and Heterogeneous Bonding of Cu, SiO2, and Polyimide at 150°C and Atmospheric Pressure

Homo- and heterogeneous bonding of Cu, SiO₂, and polyimide, by using a single vapor-assisted surface activation method at 150°C and atmospheric pressure, is highly feasible and will be of practical use in three-dimensional heterointegration of thin, flat interconnection layers. Since it is necessary to achieve good bondability to diverse materials in a single process in order to maintain bumpless structures, we have to create a compatible bridging layer. Bridging layers, based on Cu hydroxide hydrate and silanol and hydroxyl groups formed from SiO₂ and polyimide, respectively, were prepared by introducing water onto the activated surfaces at atmospheric pressure. The growth rate of the bridging layers was tunable via absolute humidity, and exposure of 8 g/m³ was used. Heating at 150°C, after exposure to humidity, caused tight adhesion between the mating surfaces for all combinations of starting materials with voidless amorphous interfacial (bridging) layers. Because of the well-controlled layer thickness, low electrical resistivity of ～4 × 10^?8 Ω m was obtained at the Cu–Cu interface.     

Effect of Prebonding Anneal on the Microstructure Evolution and Cu–Cu Diffusion Bonding Quality for Three-Dimensional Integration

Electroplated copper (Cu) films are often annealed during back-end processes to stabilize grain growth in order to improve their electrical properties. The effect of prebonding anneal and hence the effective initial grain size of the Cu films on the final bond quality are studied using a 300-nm-thick Cu film that was deposited on a 200-mm silicon (Si) wafer and bonded at 300°C. As compared with the control wafer pair with a prebonding anneal at 300°C for 1?h in N₂, the wafer pair without a prebonding anneal showed greater improvement in void density based on c-mode scanning acoustic microscopy (c-SAM). Dicing yield and shear strength were also enhanced when a prebonding anneal was not applied. This improvement is due to substantial grain growth of smaller Cu grains during the bonding process, which leads to a stronger Cu?CCu bond. Our work has identified a Cu?CCu bonding process with a lower total thermal budget, which is seen as a favorable option for future three-dimensional (3D) integrated circuit (IC) technology.     

Microcrystalline Silicon Materials and Solar Cells Prepared by VHF-PECVD

A series of samples deposited by VHF - PECVD at different pressures were studied. The measurement results of photosensitivity (photo conductivity/dark conductivity) and activation energy indicaten ear the same rule with the change of the pressure. The results measured by Raman scattering spectra, X-ray diffraction and FTIR all proved the evident crystallization of the materials. Treating the p/i interface by hydrogen has a great improving effect on the performance of the microcrystalline silicon (μc-Si) p-i-n solar cells if the treatment time was appropriate. An efficiency of 4.24% for μc-Si p-i-n solar cells deposited by VHF-PECVD was firstly obtained.     

Polyspectral Analysis of Two-dimensional Mixed Processes and Coupled Harmonics

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Optical Properties of Silicon—doped InGaN and GaN Layers

The optical properties of Silicon—doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. At room temperature, the band—gap peak of InGaN is 437.0 nm and its full width of half—maximum (FWHM) is about 14.3 nm. The band—gap peak and FWHM for GaN are 364.4 nm and 9.5 nm, respectively. By changing the temperature from 20 K to 293 K, it is found that the PL intensity of samples decreases but the FWHM broadens with the increasing of the temperature.GaN sample shows red—shift, InGaN sample shows red—blue—red—shift. The temperature dependence of peak energy shift is studied and explained.     

Strategies for Realizing Rechargeable High Volumetric Energy Density Conversion-Based Aluminum–Sulfur Batteries

Aluminum–sulfur batteries (ASBs) are deemed to be alternatives to meet the increasing demands for energy storage due to their high theoretical capacity, high safety, low cost, and the rich abundances of Al and S. However, the challenging problems including sluggish conversion kinetics, inferior electrolyte compatibility, and potential dendrite formation are still remained. This review comprehensively focuses on summarizing the specific strategies from polysulfide shuttling inhibition to form smooth anodic Al activation/deposition. Especially, innovations in cathodic side for achieving electrochemical kinetic modulations, electrolyte optimizations, and anodic interface mediations are discussed. Upon detailed elaborating the formation process, influencing factors, and their interactions in the Al–S electrochemistry, a comprehensive summary of their causative mechanisms and the corresponding strategies are provided, including optimization of electrolytes, innovative in situ detections, and precise electrocatalytic strategies. Based on such a systematic understanding in the Al–S electrochemistry, the possible electrochemical reaction mechanism is deciphered more clearly and enlightened practical strategies on the future development of stable ASBs. Furthermore, future opportunities and directions of high-performance conversion-based Al–S batteries for large-scale energy storage applications are highlighted.     

Silicon germanium active layer with graded band gap and µc-Si:H buffer layer for high efficiency thin film solar cells

We investigated solar cells with graded band gap hydrogenated amorphous silicon germanium active layer and hydrogenated microcrystalline silicon buffer layer at the interface of intrinsic and n-type doped layer. A significantly improved, 10.4% device efficiency was observed in this type of single junction solar cell. The intrinsic type microcrystalline silicon buffer layer is thought to play dual roles in the device; as a crystalline seed-layer for growth of n-type hydrogenated microcrystalline silicon layer and helping efficient electron collection across the i/n interface. Based on these, an enhancement in cell parameters such as the open-circuit voltage (V_oc), and fill factor (FF) was observed, where the FF and V_oc reaches up to 69% and 0.85 V respectively. Our investigation shows a simple way to improve device performance with narrow-gap silicon germanium active layer in solar cells in comparison to the conventionally constant band gap device structure.     

A novel hetero-junction Tunnel-FET using Semiconducting silicide–Silicon contact and its scalability

A new type of silicon-based Tunneling FET (TFET) using semiconducting silicide Mg₂Si/Si hetero-junction as source-channel structure is proposed and the device simulation has been presented. With narrow bandgap of silicide and the conduction and valence band discontinuous at the hetero-junction, larger drain current and smaller subthreshold swing than those of Si homo-junction TFET can be obtained. Structural optimization study reveals that low Si channel impurity concentration and the alignment of the gate electrode edge to the hetero-junction lead to better performance of the TFET. Scaling of the gate length increases the off-state leakage current, however, the drain voltage (V_d) reduction in accordance with the gate scaling suppresses the phenomenon, keeping its high drivability.     

Mott and Efros–Shklovskii Variable-Range Hopping Conduction in Films Formed by Silicon Nanoparticles Doped with Phosphorus and Boron

Semiconductors - The electrical characteristics of thin films formed from Si nanoparticles (nc-Si) with various degrees of doping are studied. To eliminate the influence of ionic conduction, the...