105-GHz bandwidth metal-semiconductor-metal photodiode

The authors report the fabrication and characterization of a metal-semiconductor-metal (MSM) Schottky-barrier photodiode with a measured impulse response shorter than 5 ps and a bandwidth of 105 GHz at a bias voltage of 0.5 V. It is shown that the experimental results are in good agreement with numeric calculations. Because of its high performance and process compatibility with GaAs FETs, this type of photodiode is very well suited for monolithic micro- and millimeter-wave optoelectronic circuits     

Locally ion-implanted JFET in an InGaAs/InP p-i-n photodiode layerstructure for a monolithically planar integrated receiver OEIC

A novel planar concept for the monolithic integration of a p-i-n photodiode (PD) and a junction field-effect transistor (JFET) is described. In an otherwise optimized InGaAs/InP PD layer sequence, grown by metalorganic vapor-phase epitaxy (MOVPE), a local Si- and Be-ion implantation has been performed to realize a thin n⁺-doped channel layer and a buried p-layer for the JFET. JFETs (1.6×290 μm) have a maximum transconductance of 100 mS/mm and a cutoff frequency of 7 GHz. PDs with 64-μm diameter show a dark current of 1 nA at -10 V, a responsivity of 1.1 A/W, and a 3-dB bandwidth of 7.6 GHz. The PD-JFET combination exhibits a clear open eye pattern at 200 Mb/s. A receiver sensitivity of -35 dBm for a bit error rate of 10^-9 is estimated     

GaInAsP/InP laser with monolithically integrated monitoring detector

Monolithic fabrication of a GaInAsP/InP laser with an etched mirror and monitoring detector is reported. Stripegeometry lasers operating at wavelengths of ~1.3 ?m with threshold current of only 300 mA have been obtained. The monitoring detector on the same InP substrate was confirmed to operate with high sensitivity, comparable with that of an external Ge photodiode.     

A monolithically integrated photoreceiver compatible withInP/InGaAs HBT fabrication process

We demonstrate, for the first time, the characteristics of an InP/InGaAs HBT-compatible pin-PD and a monolithically integrated pin/HBT photoreceiver. The pin-PD can produce a short pulse with an FWHM of 80.8 ps followed by an elongated tail, when illuminated by optical pulses with an FWHM of 40 ps and a wavelength of 1.3 μm. The fall time of the output is determined by the transit time of holes generated in the n ⁺-InGaAs layer. The monolithically integrated photoreceiver, consisting of the pin-PD and a transimpedance preamplifier, can operate at 2.5 Gb/s with a sensitivity of -9.8 dBm. This performance was mainly limited by the characteristics of the pin-PD     

A monolithically integrated 190-GHz SiGe push-push oscillator

In this letter, we present a fully monolithically integrated G-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f/sub T/= 200GHz and a maximum frequency of oscillation fmax= 275GHz. The passive circuitry is realized by integrated transmission-line components, metal-insulator-metal (MIM)-capacitors and TaN resistors. The frequency of the output signal can be tuned between 183.3GHz and 190.5GHz, the maximum output power of the oscillator is -4.5dBm and the measured minimum single sideband phase noise is -73dBc/Hz at 1-MHz offset frequency. This represents the highest output frequency for oscillators using heterojunction bipolar transistor technology and published up to now.     

Highly integrated InP HBT optical receivers

This paper presents two highly integrated receiver circuits fabricated in InP heterojunction bipolar transistor (HBT) technology operating at up to 2.5 and 7.5 Gb/s, respectively. The first IC is a generic digital receiver circuit with CMOS-compatible outputs. It integrates monolithically an automatic-gain-control amplifier, a digital clock and data recovery circuit, and a 1:8 demultiplexer, and consumes an extremely low 340 mW of power at 3.3 V, including output buffers. It can realize a full optical receiver when connected to a photo detector/preamplifier front end. The second circuit is a complete multirate optical receiver application-specific integrated circuit (ASIC) that integrates a photodiode, a transimpedance amplifier, a limiting amplifier, a digital clock and data recovery circuit, a 1:10 demultiplexer, and the asynchronous-transfer-mode-compatible word synchronization logic. It is the most functionally complex InP HBT optoelectronic integrated circuit reported to date. A custom package has also been developed for this ASIC     

Gigabit per second operation by monolithically integrated InGaAsP/InP LD-FET

A single-step grown 1.3 ?m buried-heterostructure laser and FET are monolithically integrated on a semi-insulating InP substrate. 2 Gbit/s RZ random pulse modulation has been first achieved for monolithic light sources.     

AlGaAs/GaAs microcleaved facet (MCF) laser monolithically integrated with photodiode

A new AlGaAs/GaAs double-heterostructure laser with microcleaved facets, restricted just at stripe contact edges, has been developed. This laser and a junction photodiode have been monolithically integrated in a single GaAs substrate. Low-threshold current lasing and high-fidelity monitoring characteristics have been demonstrated.     

An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-/spl Omega/. The input-referred current noise is less than 35 pA//spl radic/Hz over the measurement range up to 40 GHz.     

27-GHz bandwidth high-speed monolithic integrated optoelectronicphotoreceiver consisting of a waveguide fed photodiode and anInAlAs/InGaAs-HFET traveling wave amplifier

A monolithic integrated photoreceiver for 1.55-μm wavelength has been designed for operation in a 20-Gb/s synchronous digital hierarchy system (SDH/SONET), based on a new integration concept. The optoelectronic integrated circuit (OEIC) receiver combines a waveguide-integrated PIN-photodiode and a traveling wave amplifier in coplanar waveguide layout with four InAlAs/InGaAs/InP-HFETs (0.7-μm gate length). The receiver demonstrates a bandwidth of 27 GHz with a low frequency transimpedance of 40 dBΩ. This is, to our knowledge, the highest bandwidth ever reported for a monolithic integrated photoreceiver on InP. Furthermore, a receiver sensitivity of -12 dBm in the fiber (20 Gb/s, BER=10^-9) and an overall optical input dynamic range of 27 dB is achieved. Optical time domain multiplex (TDM) system experiments of the receiver packaged in a module show an excellently shaped eye pattern for 20 Gb/s and an overall sensitivity of -30.5 dBm (BER=10^-9) [including erbium doped fiber amplifiers (EDFA)]     

Tunable MQW-DBR laser with monolithically integrated GaInAsP/InP directional coupler switch

The authors report the successful monolithic integration of a GaInAsP/InP single-mode Delta kappa directional coupler switch with a 4-section tunable multiple-quantum-well distributed Bragg reflector laser. They obtain several mW of output power through the switch, with approximately 10 dB crosstalk either from the internal laser source or with external light injected through the parallel input port.<>     

Planar-junction, top-illuminated GaInAs/InP pin photodiode with bandwidth of 25 GHz

A top-illuminated GaInAs/InP pin photodiode has been produced in a planar-junction configuration, which combines high reliability (no change in dark current over 4700 h at 175 degrees C) with the widest bandwidth (25 GHz), and highest quantum efficiency (80% at 1.55 mu m), yet reported for this type of device.<>     

Demonstration of a 311-GHz Fundamental Oscillator Using InP HBT Technology

In this paper, a sub-millimeter-wave HBT oscillator is reported. The oscillator uses a single-emitter 0.3 m15 m InP HBT device with maximum frequency of oscillation greater than 500 GHz. The passive components of the oscillator are realized in a two metal process with benzocyclobutene used as the primary transmission line dielectric. The oscillator is implemented in a common base topology due to its inherent instability. The design includes an on-chip resonator, output matching circuitry, and injection locking port. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Additionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. This is the first fundamental HBT oscillator operating above 300 GHz.     

Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology

In this letter, 184 and 255 GHz single-stage heterojunction bipolar transistor (HBT) amplifiers are reported. Each amplifier uses a single-emitter 0.4 mum 15 mum InP HBT device with maximum frequency of oscillation (f_max) greater than 500 GHz and of 200 GHz. The 183 GHz single-stage amplifier has demonstrated gain of 4.3 plusmn 0.4 dB for all sites on the wafer. The 255 GHz amplifier has measured gain of 3.5d B and demonstrates the highest frequency measured HBT amplifier gain reported to date. Both amplifiers show excellent agreement with original simulation.     

A 622 Mb/s monolithically integrated InGaAs/InP four-channel p-i-nFET receiver array

The authors describe the sensitivity and crosstalk characteristics of a long-wavelength monolithically integrated four-channel photoreceiver array. This receiver consists of 4 p-i-n PDs, 24 JFETs, and 28 level-shift diodes. The device is fabricated using MOVPE-grown crystals and a Be ion implantation technique. The receiver chip demonstrates a sensitivity of between -30.6 and -31.4 dBm, and crosstalk below -20 dB over its operating frequency range. Sensitivity deterioration due to crosstalk is demonstrated and is shown to be a critical factor in system performance. The crosstalk is mainly due to parasitic inductances on the external power supply circuits     

Preparation and properties of monolithically integrated lenses on InGaAsP/InP light-emitting diodes

A simple chemical etching technique has been developed to prepare integrated lenses of the InP substrate material on InGaAsP/InP double-heterostructure Burrus-type diodes. By coupling lensed diodes with emitting regions 20 ?m in diameter to graded-index fibres with a core diameter of 60 ?m, an improvement in launching efficiency up to a factor of 3 compared to flat devices has been reproducibly achieved.     

Optical control of resonant tunneling diode monolithically integrated with PIN photodiode

Optical control of the resonant tunneling characteristics of an integrated optoelectronic device with a monolithic integrated double-barrier/PIN structure is studied. Optical switching of the bistable resonant tunneling state and optical injection locking of a resonant tunneling oscillator at 1 GHz are demonstrated.     

高速InP/InGaAs HBT

<正> 最近TI公司报道了一种甚高性能的InP/InGaAs HBT,其f_(max)为180GHz,f_T为100GHz,电流密度为1×10~5A/cm~2。有效延迟时间(f_T/8πf_(max)~2)为0.2ps,这是已报道的共发射极InP/InGaAsHBT中的最小值。 这     

7.3-GHz dynamic frequency dividers monolithically integrated in astandard bipolar technology

Monolithic integrated microwave 1/2 and 1/8 frequency dividers were developed and fabricated in standard 2-μm bipolar technology. The circuits, which operate from about 2 GHz to 7.3 GHz, are based on the principle of regenerative frequency division. Assuming that the same technology is used, this principle makes it possible to double the upper frequency limit of the most popular static master-slave D-flip-flop dividers. Power consumption can be considerably reduced     

用于单片集成光接收机前端的GaAs基InP/InGaAs HBT

实现了一种可用于单片集成光接收机前端的GaAs基InP/InGaAs HBT。借助超薄低温InP缓冲层在GaAs衬底上生长出了高质量的InP外延层。在此基础上,只利用超薄低温InP缓冲层技术就在半绝缘GaAs衬底上成功制备出了InP/InGaAsHBT,器件的电流截止频率达到4.4GHz,开启电压0.4V,反向击穿电压大于4V,直流放大倍数约为20。该HBT器件和GaAs基长波长、可调谐InP光探测器单片集成为实现适用于WDM光纤通信系统的高性能、集成化光接收机前端提供了一种新的解决方法。