Enhancement in CO gas sensing properties of hydroxyapatite thick films: Effect of swift heavy ion irradiation

This paper investigates the effect of swift heavy ion (SHI) irradiation on surface morphology of Hydroxyapatite (HAp) thick films and modification in gas sensing characteristics. The HAp nanopowder is synthesized by wet chemical process and the thick films are prepared by screen printing technique. These films are irradiated with Ag⁷⁺ ions with energy of 100 MeV at different fluences ranging from 3 × 10¹⁰ to 3 × 10¹³ ions/cm². X-ray diffraction and atomic force microscopy tools are employed to examine the phase and surface modification in HAp thick films due to swift heavy ion irradiation. The ion irradiation study shows that crystallinity decreases and grain size changes with increase in ion fluence. A precise study on gas sensing is carried out to confirm operating temperature of HAp thick film sensor to detect CO gas. Saturation region of the film with increasing gas concentration and other parameters such as response and recovery time are also investigated from the point of view of using HAp films as a sensor device. SHI irradiated HAp thick film shows enhancement in the gas response and saturation limit for CO gas. Furthermore, the irradiated HAp film shows fast response and recovery time for CO gas. The study concludes that nanoceramic HAp thick film is an excellent CO gas sensor at an operating temperature of 195 °C.     

Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

The present study compares structural and optical modifications of bare and silica (SiO₂) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni¹²⁺ ion beam with fluences 10¹² to 10¹³ ions/cm². Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one.     

1/f Noise properties of swift heavy ion irradiated epitaxial thin films of YBCO

Effect of 250 MeV¹⁰⁷Ag ion irradiation induced columnar defects on the noise properties of the YBCO superconductor in the normal and superconducting state have been investigated. Magnitude of the spectral density of the noise is found to scale inversely with the frequency and exhibit a quadratic dependence on the bias current confirming that the noise arises due to the resistance fluctuations. The magnitude ofS _v has been found to decrease with decrease in temperature and shows a noise peak in the transition region. The noise performance of these materials in the vicinity of the superconducting transition as well as in the normal state is found to improve by an order of magnitude after irradiation with 250 MeV¹⁰⁷Ag ions. The decrease in the magnitude of 1/f noise peak is due the irradiation induced enhanced flux pinning of the material which suppresses the flux motion induced noise in the vicinity ofT _c.     

Synthesis of nanocrystalline tin oxide thin film by swift heavy ion irradiation

Nanocrystals of tin oxide were formed in e-beam evaporated films by swift heavy ion (SHI) irradiation. The nucleation of nanocrystals occurred due to electronic excitation by swift heavy ion. Nanophase thin films are characterized systematically by HRTEM, GAXRD, EDX, and UV/NIS absorption techniques. Nanocrystals having size of 8 nm radius are synthesized in different substrates during swift heavy ion irradiation and without subsequent annealing. SHI induced nanocrystallization could be achieved in both crystalline and non-crystalline substrates.     

Nanoparticle formation by swift heavy ion irradiation of indium oxide thin film

In this study, a novel approach for the formation of indium oxide (IO) nanoparticles by irradiating IO thin film using 100?MeV Ag(8+) ions has been reported. High resolution transmission electron microscopy and energy dispersive x-ray analysis confirm the presence of single-crystalline IO nanoparticles after irradiation. The electronic excitations induced by 100?MeV Ag(8+) ions followed by thermal relaxation of the energy spike in IO thin film is responsible for the formation of latent tracks in the film. The electronic energy loss (S(e)) of 100?MeV Ag(8+) ions in IO is greater than the threshold electronic energy loss (S(eth)) required for the track formation in IO film, but is less than S(eth) required for crystalline silicon. Therefore, the tracks are formed in the IO film and not in the silicon substrate. This results in a stress induced at the IO film and silicon substrate interface which is responsible for dewetting of the tracks and the formation of nanoparticles. The theoretically calculated value of nanoparticle diameter using the thermal spike model is found to be in good agreement with the experimentally observed value of 30?nm.     

Mixing induced by swift heavy ion irradiation at Fe/Si interface

The present work deals with the mixing of metal and silicon by swift heavy ions in high-energy range. Threshold value for the defect creation in metal Fe calculated was found to be ∼ 40 keV/nm. A thin film of Fe (10 nm) was deposited on Si (100) at a pressure of 4 × 10⁻⁸ Torr and was irradiated with 95 MeV Au ions. Irradiation was done at RT, to a dose of 10¹³ ions/cm² and 1 pna current. The electronic energy loss was found to be 29.23 keV/nm for 95 MeV Au ions in Fe using TRIM calculation. Compositional analysis of samples was done by Rutherford backscattering spectroscopy. Reflectivity studies were carried out on the pre-annealed and post-annealed samples to study irradiation effects. Grazing incidence X-ray diffraction was done to study the interface. It was observed that ion beam mixing reactions at RT lead to mixing as a result of high electronic excitations.     

Optical properties of swift ion beam irradiated CdTe thin films

This paper reports the effect of swift (80 MeV) oxygen (O⁺⁶) ion irradiation on the optical properties of CdTe thin films grown by conventional thermal evaporation on glass substrates. The films are found to be slightly Te-rich in composition and irradiation results no change in the elemental composition. The optical constants such as refractive index (n), absorption coefficient (α) and the optical band gap energy show significant variation in their values with increase in ion fluence. Upon irradiation the band gap energy decreased from a value of 1.53 eV to 1.46 eV whereas the refractive index (n) increased from 2.38 to 3.12 at λ = 850 nm. The photoluminescence spectrum shows high density of native defects whose density strongly depends on the ion fluence. Both analyses indicate considerable defect production after swift ion beam irradiation.     

Study of structural and free volume properties of swift heavy ion irradiated Polyallyl diglycol carbonate polymer films

Structural and free volume properties of polyallyl diglycol carbonate (PADC) commercially known as CR-39 polymer films of thickness 250 μm were irradiated with 50 MeV Li³⁺ ions at the fluences ranging from 1 × 10¹¹ to 1 × 10¹⁴ ions/cm². The structural studies were investigated by X-ray diffraction measurement. The crystallite size as well as percentage crystallinity was calculated from the X-ray diffraction data. The change in the crystallite size, peak broadening and variation in the intensity of X-ray peak shows significant increase in amorphous phases of the polymer samples at higher fluences. Free volume properties were studied by Positron Annihilation Lifetime Spectroscopy (PALS). Hole radius (R), free volume (V_f) and fractional free volume (F_v) were calculated by using the Tao–Eldrup Model. There is a gradual decrease in the hole radius and free volume up to the fluence of 1 × 10¹² ions/cm². It could be attributed to the cross linking of polymer chains whereas subsequent irradiation resulted in an additional defect generation that aided to the free volume growth by their condensation on to the existing free volume defects. The free volume increases at higher fluences whereas degree of crystallinity shows opposite behavior at higher fluences.     

Enhancement of hydroxyapatite dissolution through structure modification by Krypton ion irradiation

Hydroxyapatite(HA) synthesized by a wet chemical route was subjected to heavy ion irradiation, using4 Me V Krypton ion(Kr~(17+)) with ion fluence ranging from 1 × 10~(13) to 1 × 10~(15) ions/cm~2. Glancing incidence X-ray diffraction(GIXRD) results confirmed the phase purity of irradiated HA with a moderate contraction in lattice parameters, and further indicated the irradiation-induced structural disorder, evidenced by broadening of the diffraction peaks. High-resolution transmission electron microscopy(HRTEM) observations indicated that the applied Kr irradiation induced significant damage in the hydroxyapatite lattice.Specifically, cavities were observed with their diameter and density varying with the irradiation fluences,while a radiation-induced crystalline-to-amorphous transition with increasing ion dose was identified.Raman and X-ray photoelectron spectroscopy(XPS) analysis further indicated the presence of irradiationinduced defects. Ion release from pristine and irradiated materials following immersion in Tris(p H 7.4,37?) buffer showed that dissolution in vitro was enhanced by irradiation, reaching a peak at 0.1 dpa.We examined the effects of irradiation on the early stages of the mouse osteoblast-like cells(MC3 T3-E) response. A cell counting kit-8 assay(CCK-8 test) was carried out to investigate the cytotoxicity of samples, and viable cells can be observed on the irradiated materials.     

Piezospectroscopic study of mechanical stress in Al2O3:Cr under swift heavy ion irradiation

The spatial distribution of mechanical stresses in Al₂O₃:Cr single crystal irradiated with (1 ÷ 3) MeV/amu Kr, Xe and Bi ions has been studied by using laser confocal scanning microscopy technique. The stress level as a function of the ion penetration depth has been evaluated from depth-resolved photostimulated R-line luminescence spectra exploiting the piezospectroscopic method. As it was found, the stress field generated by swift heavy ion irradiation is composed of stresses with maximal magnitude comparable with the ultimate stress limit of ruby crystals. Experimental data are discussed in the framework of a model considering the Cr³⁺ atoms as individual piezosensors.     

Redistribution of indium implanted in silicon due to thermal treatment and swift heavy ion irradiation

Silicon layers of 150 nm thickness supersaturated with indium up to ≈5 at% were prepared by multiple energy ion implantation. A redistribution of the implanted impurities caused by post-implantation annealing and following irradiation with swift Bi ions has been observed by means of Rutherford backscattering spectrometry in channelling configuration (RBS/C). It is demonstrated by TEM that the thermal decomposition of the supersaturated Si〈In〉 solution is accompanied by polycrystalline recrystallisation of amorphous silicon, precipitation of the second phase (In) both within the implanted layer and on the surface, as well as by impurity redistribution. The main features of the structure transformation under the influence of the Bi ion irradiation are discussed.     

Structural properties of swift heavy ion beam irradiated Fe/Si bilayers

The Fe/Si multilayers were prepared by electron beam evaporation in a cryo-pumped vacuum deposition system. Ag⁺ and Au⁺ ions of 100 MeV at two different fluencies such as 1 × 10¹² ions/cm² and 1 × 10¹³ ions/cm² at a pressure of 10^− 7 torr were used to irradiate the Fe/Si samples. The irradiated samples were analyzed by High-Resolution XRD and it reveals that the irradiated films are having polycrystalline nature and it confirms the formation of the β-FeSi₂. The structural parameters such as crystallite size (D), strain (ε) and dislocation density (δ) have been evaluated from the XRD spectrum. The role of the substrates and the influence of swift heavy ions on the formation of β-FeSi₂ have been discussed in this paper.     

Gas sensing properties of lead doped tin oxide thick films

The present investigation deals with the fabrication of liquid petroleum gas (LPG) sensor materials based on semiconducting oxide SnO₂. The gas sensor materials have been prepared by conventional solid-state route. The effect of Pb incorporation, operating temperature, morphology, and sensitivity is discussed using the results of X-ray diffraction (XRD), along with sensing performance. Out of various sensor compositions, Pb doped SnO₂ sintered at 1000 °C for 2 h has shown high sensitivity towards LPG at an operating temperature of 150 °C. Different characterization techniques have been employed, such as surface area analyzer, X-ray diffraction (XRD), to study the formation of SnO₂, surface area and crystallite size, respectively. The results suggested the possibility of utilizing the sensor element for the detection of LPG.     

氧化钨纳米线敏感膜对CO气体的气敏性能

采用丝网印刷法制备了氧化钨纳米线敏感膜,系统研究了不同热处理温度下敏感膜的结构、形貌以及对CO气体的气敏性能.结果表明,氧化钨纳米线敏感膜具有较高的结构稳定性,经450℃热处理后其结晶取向和结构均未发生变化;热处理温度的升高有助于提高敏感膜的晶化程度,同时导致其表面的氧化钨纳米棒逐渐变短、变粗直至消失,并最终形成较大的纳米颗粒;经300℃热处理的敏感膜在300℃时对1×10 叫CO气体具有最佳的气敏性能,其灵敏度为17.64,响应时间为8s,恢复时间为16s.     

Effect of Si substrate on ethanol gas sensing properties of ZnO films

We prepared ZnO/n-Si heterojunctions by depositing ZnO films on n-Si substrates with different resistivities by radio-frequency magnetron sputtering. The microstructure of ZnO film was analyzed by X-ray diffraction and scanning electron microscopy. The current-voltage characteristics and ethanol gas sensing properties of the junctions were investigated at room temperature. It is found that optimization of n-Si substrate resistivity is critical to enhance the ethanol gas sensitivity of ZnO/n-Si heterojunction. The ZnO/n-Si heterojunction with n-Si substrate of 2-3 Ω cm exhibits the best ethanol gas sensing property. The junction shows the sensitivity of 29.41% to 0.24 g/L ethanol gas under + 0.52 V forward bias voltage.     

Temperature enhanced gas sensing properties of diamond films

Nanocrystalline diamond (NCD) film was used as a functional part of gas sensor. The gas sensing properties of H-terminated nanocrystalline diamond films were examined to oxidizing gases (i.e., COCl₂ and humid air). Pronounced increase in the surface conductivity (3 orders of magnitude) was found after sensor exposure to phosgene gas and was explained by the surface transfer doping effect. We also present a possible way how to achieve sensor selectivity, i.e. how to distinguish between phosgene and humid air (the mostly present background gas in a common environment).     

Gas sensing properties of Cu and Cr activated BST thick films

H₂S gas sensing properties of BST ((Ba_0.67Sr_0.33)TiO₃)) thick films are reported here for the first time. BST ceramic powder was prepared by mechanochemical process. Thick films of BST were prepared by screen-printing technique. The sensing performance of the films was tested for various gases. The films were surface customized by dipping them into aqueous solutions of CuCl₂ and CrO₃ for various intervals of time. These surface modified BST films showed improved sensitivity to H₂S gas (100 ppm) than pure BST film. Chromium oxide was observed to be a better activator than copper oxide in H₂S gas sensing. The effect of microstructure and amount of activators on H₂S gas sensing were discussed. The sensitivity, selectivity, stability, response and recovery time of the sensor were measured and presented.     

Nanocrystalline ZnO thin films: optoelectronic and gas sensing properties

Nanocrystalline Zinc oxide thin films have been deposited by sol–gel spin coating technique and then have been analyzed before and after a suitable thermal annealing in order to test their applications in various reducing and oxidizing gases. ZnO thin films were highly sensitive and selective for NH₃ gas. The spectrophotometric and conductivity measurements have been performed in order to determine the optical and electrical properties of zinc oxide thin films. The structure and the morphology of such material have been investigated by high resolution electron microscopy and small area electron diffraction. The average particle size is in 60–70 nm.     

Structural and electrical properties of swift heavy ion beam irradiated Co/Si interface

Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the Co/Si interface for investigation of ion beam mixing at various doses: 8 × 10¹², 5 × 10¹³ and 1 × 10¹⁴ cm⁻². Formation of different phases of cobalt silicide is identified by the grazing incidence X-ray diffraction (GIXRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation.I–V characteristics at Co/Si interface were undertaken to understand the irradiation effect on conduction mechanism at the interface.     

Structural and electrical properties of swift heavy ion beam irradiated Fe/Si interface

The present work deals with the mixing of iron and silicon by swift heavy ions in high-energy range. The thin film was deposited on a n-Si (111) substrate at 10⁻⁶ torr and at room temperature. Irradiations were undertaken at room temperature using 120 MeV Au⁺⁹ ions at the Fe/Si interface to investigate ion beam mixing at various doses: 5 × 10¹² and 5 × 10¹³ ions/cm². Formation of different phases of iron silicide has been investigated by X-ray diffraction (XRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation. I-V measurements for both pristine and irradiated samples have been carried out at room temperature, series resistance and barrier heights for both as deposited and irradiated samples were extracted. The barrier height was found to vary from 0·73–0·54 eV. The series resistance varied from 102·04–38·61 kΩ.