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1.
We investigated the N2 additive effect on the etch rates of TiN and SiO2 and etch profile of TiN in N2/Cl2/Ar adaptively coupled plasma (ACP). The mixing ratio of Cl2 and Ar was fixed at 75 and 25 sccm, respectively. The N2 flow rate was increased from 0 to 9 sccm under the constant pressure of 10 mTorr. As N2 flow rate was increased in N2/Cl2/Ar plasma, the etch rate of TiN was linearly increased, but that of SiO2 was increased non-monotonically. The etch profile and the compositional changes of TiN was investigated with field emission-scanning electron microscope (FE-SEM), FE-Auger electron spectroscopy (FE-AES) and x-ray photoelectron spectroscopy (XPS). When 9 sccm N2 was added into Cl2/Ar, a steep etch profile and clean surface of TiN was obtained. In addition, the signals of TiN and Ti were disappeared in FE-AES and XPS when N2 additive flow into Cl2/Ar was above 6 sccm. From the experimental data, the increase in TiN etch rate was mainly caused by the increase of desorption and evacuation rate of etch by products because of the increased effective pumping speed. The etch mechanism of TiN in N2/Cl2/Ar ACP plasma can be concluded as the ion enhanced chemical etch.  相似文献   

2.
We investigated the etch characteristics and mechanisms of Ga-doped ZnO (Ga-ZnO) thin films in HBr/X (X = Ar, He, N2, O2) inductively-coupled plasmas. The etch rates of Ga-ZnO thin films were measured as a function of the additive gas fraction in the range of 0-100% for Ar, He, N2, and O2 at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using a combination of the global (zero-dimensional) plasma model and Langmuir probe diagnostics. By comparing the behavior of the etch rate and fluxes of plasma active species, we found that the Ga-ZnO etch process was not limited by ion-surface interaction kinetics and appeared in the reaction rate-limited etch regime. In the HBr/O2 plasma, the etch kinetics were probably influenced by oxidation of the etched surface.  相似文献   

3.
In this research, we investigated the TaN etch rate and selectivity with under layer (HfO2) and mask material (SiO2) in inductively coupled CH4/Ar plasma. As the CH4 content increased from 0% to 80% in CH4/Ar plasma, the TaN etch rate was increased from 11.9 to 22.8 nm/min. From optical emission spectroscopy (OES), the intensities for CH [431 nm] and H [434 nm] were increased with the increasing CH4 content from 0% to 100% in CH4/Ar plasma. The results of x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) showed no accumulation of etch by-products from the etched surface of TaN thin film. As a result of OES, AES and XPS analysis, we observed the etch by-products from the surfaces, such as Ta-N-CH and N-CH bonds. Based on the experimental results, the TaN etch was dominated by the chemical etching with the assistance of Ar sputtering in reactive ion etching mechanism.  相似文献   

4.
Xue-Yang 《Thin solid films》2010,518(22):6441-6445
In this study, the etching characteristics of ALD deposited Al2O3 thin film in a BCl3/N2 plasma were investigated. The experiments were performed by comparing the etch rates and the selectivity of Al2O3 over SiO2 as functions of the input plasma parameters, such as the gas mixing ratio, the DC-bias voltage, the RF power, and the process pressure. The maximum etch rate was obtained at 155.8 nm/min under a 15 mTorr process pressure, 700 W of RF power, and a BCl3 (6 sccm)/N2 (14 sccm) plasma. The highest etch selectivity was 1.9. We used X-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. Auger electron spectroscopy (AES) was used for the elemental analysis of the etched surfaces.  相似文献   

5.
《Vacuum》2012,86(1):1-6
In this research, we investigated the TaN etch rate and selectivity with under layer (HfO2) and mask material (SiO2) in inductively coupled CH4/Ar plasma. As the CH4 content increased from 0% to 80% in CH4/Ar plasma, the TaN etch rate was increased from 11.9 to 22.8 nm/min. From optical emission spectroscopy (OES), the intensities for CH [431 nm] and H [434 nm] were increased with the increasing CH4 content from 0% to 100% in CH4/Ar plasma. The results of x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) showed no accumulation of etch by-products from the etched surface of TaN thin film. As a result of OES, AES and XPS analysis, we observed the etch by-products from the surfaces, such as Ta–N–CH and N–CH bonds. Based on the experimental results, the TaN etch was dominated by the chemical etching with the assistance of Ar sputtering in reactive ion etching mechanism.  相似文献   

6.
In this study, we monitored the HfAlO3 etch rate and selectivity to SiO2 as a function of the etch parameters (gas mixing ratio, RF power, DC-bias voltage, and process pressure). A maximum etch rate of 52.6 nm/min was achieved in the 30% BCl3/(BCl3 + Ar) plasma. The etch selectivity of HfAlO3 to SiO2 reached 1.4. As the RF power and the DC-bias voltage increased, the etch rate of the HfAlO3 thin film increased. As the process pressure decreased, the etch rate of the HfAlO3 thin films increased. The chemical state of the etched surfaces was investigated by X-ray Photoelectron Spectroscopy (XPS). According to the results, the etching of HfAlO3 thin films follows the ion-assisted chemical etching mechanism.  相似文献   

7.
Etch characteristics of magnetic tunnel junction (MTJ) stack masked with TiN films were investigated using an inductively coupled plasma reactive ion etcher in Cl2/Ar and BCl3/Ar gases for magnetic random access memory. The effect of etch gas on the etch profile of MTJ stacks was examined. As Cl2 and BCl3 concentrations increased, the etch slope of etched MTJ stack became slanted and the dimensional shrinkage was observed. A high degree of anisotropic etching of MTJ stacks was achieved using Cl2/Ar gas at the optimized etch conditions.  相似文献   

8.
Etching characteristics and the mechanism of HfO2 thin films in Cl2/Ar inductively-coupled plasma were investigated. The etch rate of HfO2 was measured as a function of the Cl2/Ar mixing ratio in the range of 0 to 100% Ar at a fixed gas pressure (6 mTorr), input power (700 W), and bias power (300 W). We found that an increase in the Ar mixing ratio resulted in a monotonic decrease in the HfO2 etch rate in the range of 10.3 to 0.7 nm/min while the etch rate of the photoresist increased from 152.1 to 375.0 nm/min for 0 to 100% Ar. To examine the etching mechanism of HfO2 films, we combined plasma diagnostics using Langmuir probes and quadrupole mass spectrometry with global (zero-dimensional) plasma modeling. We found that the HfO2 etching process was not controlled by ion-surface interaction kinetics and formally corresponds to the reaction rate-limited etch regime.  相似文献   

9.
Y.S. Kim  J.T. Lim  G.Y. Yeom 《Thin solid films》2009,517(14):4065-3864
SiO2-like thin films were deposited at a low temperature (< 50 °C) by a remote-type, atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a pin-to-plate-type, dielectric barrier discharge with gas mixtures containing hexamethyldisilazane (HMDS)/O2/He/Ar. The film characteristics were investigated according to the HMDS and O2 flow rates. To obtain a more SiO2-like thin film, an adequate combination of HMDS and oxygen flow rates was required to remove the -(CH3)x bonding in the HMDS and to oxidize the Si in HMDS effectively. At the optimized flow rates, the surface roughness of the SiO2-like thin film was also the lowest. By using HMDS (50 sccm) and O2 (500 sccm) flow rates in the gas mixture of HMDS/O2/He (2 slm)/Ar (600 sccm), SiO2-like thin films with a low impurity (< 6.35% C) were obtained at a deposition rate of approximately 10.7 nm/min.  相似文献   

10.
Do Young Lee 《Thin solid films》2009,517(14):4047-4051
Inductively coupled plasma reactive ion etching of indium zinc oxide (IZO) thin films masked with a photoresist was performed using a Cl2/Ar gas. The etch rate of the IZO thin films increased as Cl2 gas was added to Ar gas, reaching a maximum at 60% Cl2 and decreasing thereafter. The degree of anisotropy in the etch profile improved with increasing coil rf power and dc-bias voltage. Changes in pressure had little effect on the etch profile. X-ray photoelectron spectroscopy confirmed the formation of InCl3 and ZnCl2 on the etched surface. The surface morphology of the films etched at high Cl2 concentrations was smoother than that of the films etched at low Cl2 concentrations. These results suggest that the dry etching of IZO thin films in a Cl2/Ar gas occurs according to a reactive ion etching mechanism involving ion sputtering and a surface reaction.  相似文献   

11.
Etch characteristics of CoFeB magnetic thin films patterned with TiN hard masks were investigated using inductively coupled plasma reactive ion etching in H2O/Ar and H2O/CH4 gas mixes. As the H2O concentration in the H2O/Ar gas increased, the etch rates of CoFeB and TiN films decreased simultaneously, while the etch selectivity increased and etch profiles improved slightly without any redeposition. The addition of CH4 to the H2O gas resulted in an increase in etch selectivity and a higher degree of anisotropy in the etch profile. X-ray photoelectron spectroscopy was performed to understand the etch mechanism in H2O/CH4 plasma. A good pattern transfer of CoFeB films masked with TiN films was successfully achieved using the H2O/CH4 gas mix.  相似文献   

12.
In this study, we carried out an investigation in the etching characteristics of TiN thin films in a C12/Ar adaptive coupled plasma. The maximum etch rate of the TiN thin films was 768 nm/min at a gas mixing ratio of C12 (75%)/Ar (25%). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface. Field emission Auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.  相似文献   

13.
《Vacuum》2012,86(4):403-408
In this study, we carried out an investigation in the etching characteristics of TiN thin films in a C12/Ar adaptive coupled plasma. The maximum etch rate of the TiN thin films was 768 nm/min at a gas mixing ratio of C12 (75%)/Ar (25%). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface. Field emission Auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.  相似文献   

14.
Inductively coupled plasma reactive ion etching of CoZrNb magnetic thin films was studied using a TiN hard mask in a Cl2/O2/Ar gas mix. The etch rates of CoZrNb films and TiN hard mask gradually decreased with increasing Cl2 or O2 gas concentrations. When O2 gas was added in the Cl2/Ar gas mix, the etch rate of TiN hard mask was suppressed effectively so that the etch selectivity of CoZrNb film to TiN hard mask was enhanced. The addition of O2 into the gas mix also led to the anisotropic etching of the CoZrNb films and it was confirmed by Auger electron spectroscopy that there were no redeposited materials on the sidewall of the etched films. Highly anisotropic etching of CoZrNb films was achieved at room temperature under the optimized etching conditions.  相似文献   

15.
Dry etching of GaAs was investigated in BCl3, BCl3/N2 and BCl3/Ar discharges with a mechanical pump-based capacitively coupled plasma system. Etched GaAs samples were characterized using scanning electron microscopy and surface profilometry. Optical emission spectroscopy was used to monitor the BCl3-based plasma during etching. Pure BCl3 plasma was found to be suitable for GaAs etching at > 100 mTorr while producing a clean and smooth surface and vertical sidewall. Adding N2 or Ar to the BCl3 helped increase the etch rates of GaAs. For example, the GaAs etch rate was doubled with 20% N2 composition in the BCl3/N2 plasma compared to the pure BCl3 discharge at 150 W CCP power and 150 mTorr chamber pressure. The GaAs etch rate was ∼ 0.21 µm/min in the 20 sccm BCl3 plasma. The BCl3/Ar plasma also increased etch rates of GaAs with 20% of Ar in the discharge. However, the surface morphology of GaAs was strongly roughened with high percentage (> 30%) of N2 and Ar in the BCl3/N2 and BCl3/Ar plasma, respectively. Optical emission spectra showed that there was a broad BCl3-related molecular peak at 450-700 nm wavelength in the pure BCl3 plasma. When more than 50% N2 was added to the BCl3 plasma, an atomic N peak (367.05 nm) and molecular N2 peaks (550-800 nm) were detected. Etch selectivity of GaAs to photoresist decreased with the increase of % N2 and Ar in the BCl3-based plasma.  相似文献   

16.
In this work, the etching properties of titanium dioxide (TiO2) thin film in additions of O2 at CF4/Ar plasma were investigated. The maximum etch rate of 179.4 nm/min and selectivity of TiO2 of 0.6 were obtained at an O2/CF4/Ar (=3:16:4 sccm) gas mixing ratio. In addition, the etch rate and selectivity were measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. The efficient destruction of the oxide bonds by ion bombardment, which was produced from the chemical reaction of the etched TiO2 thin film, was investigated by X-ray photoelectron spectroscopy. To determine the re-deposition of sputter products and reorganization of such residues on the surface, the surface roughness of TiO2 thin film were examined using atomic force microscopy.  相似文献   

17.
Inductively coupled plasma reactive ion etching of titanium thin films patterned with a photoresist using Cl2/Ar gas was examined. The etch rates of the titanium thin films increased with increasing the Cl2 concentration but the etch profiles varied. In addition, the effects of the coil rf power, dc-bias voltage and gas pressure on the etch rate and etch profile were investigated. The etch rate increased with increasing coil rf power, dc-bias voltage and gas pressure. The degree of anisotropy in the etched titanium films improved with increasing coil rf power and dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy revealed the formation of titanium compounds during etching, indicating that Ti films etching proceeds by a reactive ion etching mechanism.  相似文献   

18.
We have studied the reactive ion etching of Ru electrode using O2/Cl2 plasma. We have revealed that the Ru etch rate and thus the Ru to SiO2 etch selectivity increase by increasing pressure, total gas flow rate, temperature and decreasing the HRF power and LRF power. The vertical Ru etching profile is attained.  相似文献   

19.
In this work, nanocrystalline titanium nitride (TiN) films have been deposited by reactive DC magnetron sputtering technique on the Si/SiO2 (100) substrates. The influence of nitrogen gas flow rate [0, 3, 5, 7 and 9 sccm (standard cubic centimeter per minute)] on the structural, morphological and electrical properties of the nanocrystalline TiN films has been studied. As-deposited TiN films have been characterized by using X-ray diffraction (XRD), XPS (X-ray photoelectron spectroscopy), FESEM (field emission scanning electron microscopy) and four point probe resistivity measurement, respectively. The XRD patterns revealed the HCP symmetry for pure Ti (N2 = 0 sccm) with (002) preferred orientations, and the FCC symmetry for TiN (N2 = 3, 5, 7 and 9 sccm) films having (111) preferred orientations. The lattice parameters were found to be a = 2.950 ?, c = 4.681? for the Ti (N2 = 0 sccm) film and a = 4.250Å for the TiN films. The presence of different phases such as TiN and TiO2 were confirmed by XPS analysis. The FESEM images showed a smooth morphology of the film with columnar grain structures. The grain size of the TiN films was found to decrease from 22 to 15 nm as the nitrogen flow rate is increased from 0 to 9 sccm. The electrical resistivity measurement showed that the resistivity of the film increased from 11 × 10?6 to 17 × 10?6 Ohm cm on increasing nitrogen flow rate from 3 to 9 sccm, having the lowest resistivity of 11 × 10?6 Ohm cm for the film deposited at 3 sccm nitrogen flow.  相似文献   

20.
Etch characteristics of L10 FePt thin films masked with TiN films were investigated using an inductively coupled plasma (ICP) reactive ion etching in a CH3OH/Ar plasma. As the CH3OH gas was added to Ar, the etch rates of FePt thin films and TiN hard mask gradually decreased, and the etch profile of FePt films improved with high degree of anisotropy. With increasing ICP rf power and dc-bias voltage to substrate and decreasing gas pressure, the etch rate increased and the etch profile becomes vertical without any redepositions or etch residues. Based on the etch characteristics and surface analysis of the films by X-ray photoelectron spectroscopy, it can be concluded that the etch mechanism of FePt thin films in a CH3OH/Ar gas does not follow the reactive ion etch mechanism but the chemically assisted sputter etching mechanism, due to the chemical reaction of FePt film with CH3OH gas.  相似文献   

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