Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides

Semiconductors - The  results  of  investigating  the  thermoelectric  properties of the bulk р-type oxyselenides Bi1 –xPrxCuSeO (x...     

Synthesis and Thermoelectric Properties of an Sn1 – xPbxSb4Te8 Solid Solution Doped with Bismuth

Semiconductors - The thermoelectric properties of a solid solution of Sn1 – xPbxSb4Te8 and Sn1 – xPbxSb4 – yBiyTe8...     

Design of Compact Hybrid Branch Line Coupler (BLC) for GSM Application

Wireless Personal Communications - This paper presents a compact design of a hybrid branch line coupler (BLC) operating at 1.8 GHz frequency for the global system for...     

Emission of Light from Compositionally Graded CdSSe/CdS Heterostructure with Smooth Near-surface Excitonic Potential

Semiconductors - The low-temperature (T = 2 K) optical spectra (transmission, reflection and luminescence) of a compositionally graded CdS1 – xSex/CdS heterostructure with a...     

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Semiconductors - The  possibility  of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 – xAsyP1 – y quaternary alloy upon the deposition of...     

Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix

Semiconductors - The results of investigating charge-transfer processes in thin layers of a vitreous system (As2Se3)100 – xBix are presented. A power-law dependence of the...     

Transition from an Exponential to Linear Increase in the Energy Density of the Spectral Component of Picosecond Stimulated Emission by GaAs upon Gain Saturation

Semiconductors - At the beginning of high-power optical picosecond pumping of the GaAs layer of the AlxGa1 – xAs–GaAs–AlxGa1 – xAs...     

Thermoelectric Figure of Merit and Quantum Mobility of Holes in Copper-Doped Antimony-Telluride Single Crystals

Semiconductors - The thermoelectric properties of Sb2 – xCuxTe3 single crystals (0 ≤ x ≤ 0.10) synthesized by the Bridgman method are studied in the temperature...     

Absorption of Pulsed Terahertz and Optical Radiation in Earthworm Tissue and Its Heating Effect

Journal of Infrared, Millimeter, and Terahertz Waves - The transmission of THz, near-infrared (1030 nm), and green (515 nm) pulses through Eisenia andrei body wall is studied,...     

Optical Absorption Related to Interband and Intersubband Electron Transitions in Bismuth Telluride

Semiconductors - The  spectral  dependences  of  the absorption coefficient α in the submicron samples of the n-Bi2Te3 + CdBr2 topological insulator, which...     

A Differential LNA Architecture with Improved Figure of Merit Using 40 nm UMC CMOS Technology for mmWave Band Receiver Applications

Wireless Personal Communications - Wireless Sensor Network (WSN) has critical design objectives required to consider in sensor node design like power consumption, fault tolerance...     

Improved Method of Direction Finding for Non Circular Signals with Wavelet Denoising Using Three Parallel Uniform Linear Arrays

Wireless Personal Communications - Pot experiments were conducted to study the effects of different cadmium (Cd) levels (0, 75, 150, 300 and 600 mg kg?1) on the growth,...     

Low voltage bipolar resistive switching in self-assembled PVDF nanodot network in capacitor like structures on Au/Cr/Si with Hg as a top electrode

In this letter, resistive switching phenomena in self-assembled nanodot network of Polyvinylidene fluoride (PVDF) polymer in a capacitor geometry of Hg/PVDF/Au/Cr/Si is investigated. A stable & bipolar resistive switching with a set voltage ranging from 0.35 V to 0.9 V & reset voltage with a range of −0.08 V to −0.25 V is detected. A practical resistance ratio between HRS and LRS of 10–25 may have great potential in organic memories. Possible mechanism for the bipolar switching is discussed with the filament type conduction mechanism. Furthermore, the low voltage switching is elucidated with the high current density associated filament formation and it is explicated using the parallel resistor model.     

Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time

Semiconductors - During high-power optical picosecond pumping of the GaAs layer of an AlxGa1 – xAs–GaAs–AlxGa1 – xAs heterostructure, stimulated...     

Research on Anti-Jamming Algorithm of Massive MIMO Communication System Based on Multi-User Game Theory

Mobile Networks and Applications - Massive MIMO(Multiple-Input Multiple-Output) technology is one of the most important physical layer technologies in 5 g and even 6G. In the...     

A novel high-performance reversible data hiding scheme using SMVQ and improved locally adaptive coding method

Reversible data hiding is a method that not only embeds secret data but also reconstructs the original cover image without distortion after the confidential data are extracted. In this paper, we propose novel reversible data hiding scheme that can embed high capacity of secret bits and recover image after data extraction. Our proposed scheme depends on the locally adaptive coding scheme (LAC) as Chang&Nguyen’s scheme and SMVQ scheme. Experimental results show that the compression rate of our proposed scheme is 0.33 bpp on average. To embed secret bits we propose the normal-hiding scheme and the over-hiding scheme which have an average embedding rate of 2.01 bpi and 3.01 bpi, more than that of Chang&Nguyen’s scheme (1.36 bpi). The normal-hiding scheme and the over-hiding scheme also has high embedding efficiency of 0.28 and 0.36 on average, which are better than that of Chang&Kieu’s scheme (0.12), Chang&Nguyen’s scheme (0.18) and Chang&Nguyen’s scheme (0.16).     

A Compact Frequency Diversity Antenna with DGS and SRR Mode Switching for LTE and WLAN/WiMAX Wireless Systems

Wireless Personal Communications - In this article, a novel low profile multi wideband planar monopole antenna is proposed to cover GSM-1800 MHz, WiMAX (3.5/5.5 GHz), WLAN...     

Non-iterative Coordinated Beamforming for Multicell MIMO Heterogeneous Networks

Wireless Personal Communications - This paper presents ultra-wideband channel characteristics in the presence of float glass slab as obstacle of varied thickness (4 mm, 8 mm,...     

Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing

Semiconductors - The thermal stability of silicon-on-insulator films with a thickness of 4.7  and 2.2 nm is studied as a function of annealing temperature in the range of...     

Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Semiconductors - The structural properties and crystal quality of AlxGa1 ? xN/AlN/Al2O3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high silicon...