半导体激光器模组的设计

设计了一种半导体激光器模组以满足实际应用的需要.在半导体激光器模组设计中,激光器选择、光学系统设计、激光器电路设计与"邦定"技术是模组设计的关键部分.论述了半导体激光器原理,介绍了半导体激光器模组光学系统与电路设计,阐述了模组设计中"邦定"技术的工艺流程与关键技术.模组中半导体激光器的波长为635nm,驱动电源在3V～ 5V之间,激光功率在2mW左右,光学系统由一个双胶合透镜和一个正透镜组合而成,设计研制的半导体激光器模组满足设计要求.     

半导体激光器调制特性的人工神经网络仿真

对半导体激光器调制特性进行了理论分析，通过研究半导体激光器调制特性的速率方程，推导了调制特性的解析表达式。用广义回归神经网络建立了激光器调制特性的神经网络模型，通过训练好的神经网络模型对激光器调制特性进行了深入分析，并对激光器结构进行了仿真设计。模型输出结果与理论分析的结果相吻合，且该方法具有速度快、精度高、重复性好等优点。研究结果表明，利用神经网络模型可以对半导体激光器性能进行分析，并确定半导体激光器的一些结构尺寸。     

Photoconductivity study of semiconductors using the surface acoustic wave convolver

Photoconductivity study of a semiconductor using the SAW convolver is presented. The semiconductor is placed either on or a small distance above the SAW delay line. A fast rise time pulse of light is applied to the semiconductor surface through the piezoelectric substrate, and the resulting change in the semiconductor conductance is observed by the relaxation of the SAW propagation loss. This technique has the important advantage that no ohmic contact to the semiconductor is needed.     

半导体激光器驱动电路设计

设计了一种半导体激光器驱动电路,论述了半导体激光器的构造及其电路原理,阐述了半导体激光器驱动电路中恒流电路与恒压电路的工作原理与设计思路.通过在电路设计中增加恒压电路模块,有效地降低了半导体激光器的功耗.     

近年全球半导体产业的发展趋势

全球半导体产业已步入成熟期。未来10年半导体产业年均增长率放缓。手机和消费类电子产品将是推动未来半导体产业增长的主动力。未来半导体产业将是独立半导体公司的天下。未来半导体产业的整合、兼并将越演越烈。未来半导体产业的无晶圆工厂和芯片代工业将会越来越发达。私募股份投资公司开始瞄准半导体业界。     

Resistance calculation of a cylindrical semiconductor with continuously variable conductivity along its axis covered by circular electrodes

In this paper we present a new method of resistance calculation of a cylindrical semiconductor, few bases of which are covered by circular electrodes of different areas. On the semiconductor base provided with the smaller circular electrode an improved boundary condition is applied. The potential variation in the semiconductor is determined by an exact solution of the continuity equation by matching cylindrical periodic functions in the space domain on the semiconductor—electrode boundary supposing that the conductivity of the electrode is finite. Three types of conductivity profiles are considered. The conductivity of the cylindrical semiconductor along its axis is either constant, or varies linearly or exponentially. The results presented in the paper can be applied in the design, measurement and manufacture of semiconductor components having the shape of a cylinder.     

半导体设备市场的新动向

由于全球半导体市场温和增长和全球半导体资本支出市场从不缓至下滑,导致全球半导体设备市场增长放缓,2007年增长3%～4%,2008年可能出现下滑,中国台湾地区已成为全球第二大半导体设备、材料市场。光刻设备市场看好,2006～2012年复合年增长率将达到13%。450mm晶圆是半导体产业发展的必然趋势,向450mm晶圆过渡的最佳时间是2013年前后。     

水射流技术在集成电路制造工艺中的应用

半导体器件制造过程中通常采用锯片来切割芯片和封装元件.锯片一般只能切割直线轮廓,对于曲线轮廓或复合层材料,锯片切割会遇到很大的问题.水射流技术作为一种新的加工工艺,被成功引入到半导体制造行业.通过对半导体加工工艺的分析,介绍了水射流切割技术在半导体制造工艺中的应用.研究表明,水射流切割作为一种冷切割工艺,其显著特点是被加工工件没有热影响区,因此加工的半导体器件的机械强度大大提高,而且水射流切割既可以切割直线轮廓,也可以切割曲线轮廓或沟槽.另一方面,由于无切向力存在,器件定位容易,加工轮廓精度高,切割速度快,且对加工材料没有选择性.因此,采用微细水射流切割技术,可以极大地提高半导体器件的产量、质量和可靠性.     

消费电子产品发展趋势及封装技术的应用

消费性电子产品是与社会大众关系最为密切的一类半导体产品。它在半导体工业中处于应用的最前沿,其消费电子产业也是半导体产业界中发展最迅速、市场规模最大的一股力量。文章分析了近年来消费电子产业发展的动态和规律,提出了当前消费电子产品有四大发展趋势,即跨界融合、节能低功耗、体积微型化和环保绿色化,也可以简要概括为更强大、更省电、更小巧和更环保四个要素。同时分析了半导体制造工艺技术的提升是消费电子产品发展的基础和前提,并着重介绍了几类先进封装技术在消费电子产品制造中的应用。     

Spherical distribution structure of the semiconductor laser diode stack for pumping

A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere,and the output of every bar is specially off-axis compressed to realize high coupling efficiency.The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium.The efficiency of the hollow light pipe,which is used for semiconductor laser diode stack coupling,is analyzed by geometric optics and ray tracing.Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure.Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system,and guides parameter optimization.Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution.     

Photosensitivity of heterostructures based on finely ground semiconductor phases

A new type of heterostructure is suggested and developed. The heterostructures are based on the direct contact of a bulk semiconductor with a dielectric layer in which a finely ground semiconductor phase is dispersed. In Si-and GaAs-based heterostructures of this type, rectification and photovoltaic effects are observed. It is shown that illumination of such structures so that the side of the dielectric layer with the built-in finely ground semiconductor phase is exposed to light induces a broadband photovoltaic effect deep within the fundamental absorption band of the bulk semiconductor.     

半导体激光器光束质量评价方法探讨

针对半导体激光器的结构和光束特点,分析了M2因子的概念与半导体激光器激光本质之间的关系,研究了其局限性,探讨了激光光束质量的影响因素,提出利用准直代价作为半导体激光器光束质量评价因子,该因子由激光器的结构参数和光束参数有机组合而成,此值越小光束质量越好,越容易准直.新的评价因子即完善了"光参数积"的普适性,又具有针对性...     

Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn

The crystal structure, electron density distribution, and energy, kinetic, and magnetic properties of the n-ZrNiSn intermetallic semiconductor heavily doped with a Ni impurity are investigated. The effect of the accumulation of an excess number of Ni_{1 + x} atoms in tetrahedral interstices of the crystal structure of the semiconductor is found and the donor nature of such structural defects that change the properties of the semiconductor is established. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and strongly compensated semiconductor.     

半导体自旋电子学的研究与应用进展

自旋电子学是一门最新发展起来的涉及磁学、电子学以及信息学的交叉学科.自旋电子器件与普通半导体电子器件相比具有不挥发、低功耗和高集成度等优点.本文介绍了半导体自旋电子学的研究对象和内容,主要包括磁性半导体、自旋注入、自旋探测以及自旋输运等.本文综述了半导体自旋电子学目前的研究进展及其在自旋电子器件和量子信息处理中的应用.     

有机半导体激光器研究的新进展

近年来,有机半导体激光器已经成为一个新的研究热点。叙述了光泵浦有机半导体激光器的最新研究进展,对实现电泵浦（ 电注入） 有机半导体激光器也进行了评述。     

The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors

A theory of the thermopower is developed with consideration for the nonequilibrium charge produced in a p-type semiconductor and metal contacts. It is shown that the thermopower is generated due to redistribution of the nonequilibrium charge between the metal contacts and semiconductor via transport of nonequilibrium electrons from the metal to the semiconductor through one of the surfaces and from the semiconductor to the metal through the other surface. In a p-type semiconductor sample with thickness smaller than the diffusion length, at certain surface parameters, the thermopower nonlinearly depends on the temperature difference.     

外腔半导体激光器设计与高次谐波稳频

研究了利特罗(Littrow)结构外腔半导体激光器的结构参量对激光连续可调范围的影响。给出了反射镜转轴等处的机械加工误差对激光波长连续可调范围所造成的影响的数值计算结果。介绍了半导体激光器外腔结构设计的具体细节要点。利用该设计制作的外腔只需要配合商用半导体激光管便可以得到优质的780nm激光输出,经测量其线宽小于1MHz,连续可调谐范围大于3GHz。利用腔外Rb饱和吸收谱的三、五次谐波稳频方法对半导体激光器进行了稳频。其中提出了优化激光频率短期稳定度的方法,并对调制深度的选择给出了详细的理论解释。根据该优化方法设计出稳频系统对半导体激光器进行稳频,得到了稳定度达到10-12量级的半导体激光输出。     

GaSb基半导体激光器功率效率研究

为了提高GaSb基半导体激光器的功率效率和可靠性,研究了GaSb基半导体激光器欧姆接触形成机理并提出了一种新型四层金属欧姆接触结构(Ni/AuGe/Mo/Au)。进行了Au/Mo/AuGe/Ni/n-GaSb在150 ℃~450 ℃退火温度下欧姆接触的实验研究,结果表明,新结构能够在250 ℃~450 ℃退火温度和10 min退火时间下形成良好的欧姆接触并具有较低的接触电阻率,有效地提高了GaSb基半导体激光器的功率效率。俄歇射线能谱分析表明,新型金属化结构中各原子之间的互扩散减少,结构表面形貌光滑、平整,有助于半导体激光器后续封装的进行,有效地提高了GaSb基半导体激光器的可靠性。     

Transfer matrix analysis of the amplified spontaneous emission ofDFB semiconductor laser amplifiers

Analytical expressions are derived for the amplified spontaneous emission of a DFB (distributed-feedback) semiconductor laser amplifier with reflective cavity ends. The analysis is extended to a multisection DFB structure including a phase-shifted DFB semiconductor laser amplifier. It is shown that the spontaneous emission power per unit frequency bandwidth emitted from one facet is proportional to the transmission gain and to a quantity which at threshold becomes the inverse of the differential quantum efficiency of the other facet. The analysis is applied to two practical cases: (1) calculation of emission spectra of a DFB semiconductor laser biased below the threshold, and (2) assessment of the signal-to-noise ratio performance of DFB semiconductor laser amplifiers     

Grating-assisted coupling of light between semiconductor and glasswaveguides

Floquet-Bloch theory is used to calculate the electromagnetic fields in a leaky-mode grating-assisted directional coupler (LM-GADC) fabricated with semiconductor and glass materials. One waveguide is made from semiconductor materials (refractive index ≈3.2) while the second is made from glass (refractive index ≈1.45). The coupling of light between the two waveguides is assisted by a grating fabricated at the interface of the glass and semiconductor materials. Unlike typical GADC structures where power is exchanged between two waveguides using bound modes, this semiconductor/glass combination couples power between two waveguides using a bound mode (confined to the semiconductor) and a leaky mode (associated with the glass). The characteristics of the LM-GADC are discussed. Such LM-GADC couplers are expected to have numerous applications in areas such as laser-fiber coupling, photonic integrated circuits, and on-chip optical clock distribution. Analyses indicate that simple LM-GADC's can couple over 40% of the optical power from one waveguide to another in distances less than 1.25 mm