一种新的用于高速波分复用系统的色散补偿方案

本文提出了一种用于高速多路波分复用（ＷＤＭ）陆上级联掺铒光纤放大器（ＥＤＦＡ）光纤通信系统的色散补偿方案，其特点是：利用特殊设计的色散位移光纤ＳＤＤＳＦ（零色散波长λ０≈１．６μｍ，色散斜率Ｓ＿０＝０．０５ｐｓ／ｋｍ／ｎｍ２），在１５５０ｎｍ处产生－２～－４ｐｓ／ｋｍ／ｎｍ的色散，以避免ＩＴＵ－ＴＧ．６５３色散位移光纤在多路复用时的四波混频（ＦＷＭ）效应；并利用ＩＴＵ－ＴＧ．６５２标准单模光纤（非色散位移光纤ＮＤＳＦ）在１５３０～１５７０ｎｍ（ＥＤＦＡ工作带宽）范围内，有效地补偿ＳＤＤＳＦ所引入的负色散。此方案可使单路数据率高于１０Ｇｂ／ｓ的波分复用系统，经１０００ｋｍ传输后因色散引入的眼图恶化量仍＜１ｄＢ。     

低衰减色散补偿光纤及其应用

本文介绍了用具有大的正常色散单模光纤作色散补偿光纤来抵消１．３μｍ零色散波长传输光纤的反常色散的设计原理。用ＶＡＤ法制作了Δ范围从１．６－３．５ 种ＣＤＦ，并检验了其性能。获得了最大Δ为３．５％的ＤＣＦ，其在１．５５μｍ波长处的最大色数为－１４０ｐｓ／（ｎｍ．ｋｍ）。随着Δ的增大，瑞利散射和缺陷衰减增加，致使传输衰减也增大。     

4×622Mb／sWDM40km光通信系统实验

本文完成了我国第一个４×６２２Ｍｂ／ｓ波分复用（ＷＤＭ）光通信系统实验，使单根光纤线路通信容量达２．４Ｇｂ／ｓ。该系统以ＤＦＢ－ＬＤ为光源，工作波长在１．５５μｍ附近，ＬＤ的工作频率稳定度优于±１５０ＭＨｚ，信道间隔２ｎｍ左右，无中继传输距离为４３．６ｋｍ，采用Ｆ－Ｐ调谐光滤波器作为解复用器，接收机灵敏度达－３０ｄＢｍ。     

1.3μm和1.55μm Si_(1-x)Ge_x波长信号分离器与Si_(1-x)Ge_x/Si应变超晶格探测器的集成

对１．３μｍ和１．５５μｍ波长的Ｓｉ１－ｘＧｅｘ波长信号分离器（ＷＳＤ）和Ｓｉ１－ｘＧｅｘ／Ｓｉ应变超晶格（ＳＬＳ）红外探测器的集成结构进行了系统的分析和优化设计．优化结果为：（１）对Ｓｉ１－ｘＧｅｘＷＳＤ，Ｇｅ含量ｘ＝０．０５．波导的脊高和腐蚀深度分别为３μｍ和２．６μｍ．对应于λ１＝１．３μｍ和λ２＝１．５５μｍ波长的波导脊宽分别为１１μｍ和８．５μｍ．（２）对Ｓｉ１－ｘＧｅｘ／ＳｉＳＬＳ探测器，Ｇｅ含量ｘ＝０．５．探测器的厚度为５５０ｎｍ，由２３个周期的６ｎｍＳｉ０．５Ｇｅ０．５＋１７ｎｍＳｉ组成．     

研制各种光纤以适应不同应用

本文分两部分：先介绍光纤的研制发展过程,讲到标准单模光纤（ＳＭＦ）、色散移位光纤（ＤＳＦ）和非零色散光纤（ＮＺＤＦ）,又讲到单模光纤的几个波长窗口,主要是１．３１μｍ、１．５５μｍ和最近开辟的１．４０μｍ窗口;然后介绍光纤的各种不同应用,包括大容量,长距离的陆地干线,海底光缆,大城市通信线路,有线电视线路和屋内通信网线路。     

采用啁啾光栅的色散管理孤子传输

我们采用啁啾光纤光栅（ＣＦＢＧ）补偿１．３μｍＳＭ光纤传输线路的色散以后,成功地以１０Ｇｂｉｔ／ｓ速率进行了３,０００ｋｍ光孤子转输。实验中一个中继间隔由５２ｋｍ左右的１．３μｍＳＭＦ构成,经ＥＤＦＡ放大后采用ＣＦＢＧ进行色散补偿。     

色散补偿法获得5GHz,6.8ps超短光脉冲

利用色散位移光纤压缩从１．５５μｍ增益调制ＤＦＢ激光器中出射的红移啁啾光脉冲。在最优光纤压缩长度下，光脉冲宽度由４２．６ｐｓ压缩至６．８ｐｓ，压缩比为６．３     

10频道无再生中继使用光纤放大器的波分复用光纤传输实验系统

在国内首次研制了１０频道、１０２ｋｍ无再生中继使用１个平坦增益光纤放大器的ＷＤＭ光纤传输实验系统。每频道传输码率为１４０Ｍｂ／ｓ（２＾２３－１ ＮＲＺ ＰＲＢＳ或ＣＭＩ ＰＲＢＳ）。系统全部采用国产ＤＦＢ激光器，它们的波长分别为１５３１ｎｍ、１５３５ｎｍ、１５３７ｎｍ、１５４５ｎｍ、１５４７ｎｍ、１５４９ｎｍ、１５５１ｎｍ、１５５９ｎｍ、１５６１ｎｍ，在波长为１５５１ｎｍ的频道内布置了２路频率间隔     

理解带宽

当光脉冲在光纤中传播时,色散或光脉冲扩散是影响光纤带宽的主要机制。为了对光纤带宽进行标准化,端到端的光纤带宽被归一化到１公里。波长为８５０ｎｍ的１６０ＭＨｚ－ｋｍＦＤＤＩ接口和１３００ｎｍ的５００ＭＨｚ－ｋｍ　ＦＤＤＩ接口指标的实际意义为：假设光纤长度为５００米,那么两种模式带宽的理论值分别为３２０由ＭＨｚ－ｋｍ／０．５ｋｍ）和１０００ＭＨｚ（５０００ＭＨｚ－ｋｍ／０．５ｋｍ）．　　光纤和光缆制造商均采用测光标准来测量光纤带宽,并按习惯称之为“模式”带宽（Ｍｏｄａｌ　Ｂａｎｄｗｉｔｈ）。光纤成缆…     

光纤孤子激光器及用其作源的光孤子传输实验

介绍了一个１．５５μｍ光纤孤子激光器及利用它作源的光孤子脉冲传输实验。其中采用了掺铒光纤放大器锁模技术．实测孤子激光器输出脉冲宽度为３０ｐｓ．谱宽为０．１６ｎｍ；经过５０ｋｍ色散位移光纤传输后，其脉宽与谱宽基本维持不变．     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.