CMOS运算放大器的辐照和退火行为

介绍了CMOS运算放大器电路经电离辐照后,在不同偏置及不同退火温度下,运放整体性能参数、电路内部单管特性及功能单元电路的节点电流、电压的变化规律,分析了引起运放辐照后继续损伤退化的基本原因.结果显示,运放电路辐照后的退火行为与偏置及温度均有较大的依赖关系,而这种关系与辐照感生的氧化物电荷和Si/SiO2界面态密度的增长与退火直接相关.     

注氟加固PMOSFET的电离辐射响应与时间退火效应

研究了注F加固PMOSFET的总剂量辐照响应特性和辐照后由氧化物电荷、界面态变化引起的阈电压漂移与时间、温度、偏置等退火条件的关系，发现一定退火条件下注F加固PMOSFET由于界面态密度、特别是氧化物电荷密度继续增加，使得电路在电高辐照后继续损伤，探讨了加速MOS器件电离辐照感生界面态生长的方法。     

PMOS剂量计的退火特性

研究了PMOS剂量计在不同温度和栅偏置下的辐照退火表现.结果表明：温度和退火偏置条件是影响初始退火速率和退火幅度的重要因素,较高退火温度下,退火速率高,幅度大;相同退火温度下,正偏置与负偏置相比有加速退火的作用,其退火幅度也较大.在180℃,零偏条件下获得了最快的100％的退火效果;用模型讨论了实验结果.     

PMOS剂量计的退火特性

研究了 PMOS剂量计在不同温度和栅偏置下的辐照退火表现 .结果表明 :温度和退火偏置条件是影响初始退火速率和退火幅度的重要因素 ,较高退火温度下 ,退火速率高 ,幅度大 ;相同退火温度下 ,正偏置与负偏置相比有加速退火的作用 ,其退火幅度也较大 .在 1 80℃ ,零偏条件下获得了最快的 1 0 0 %的退火效果 ;用模型讨论了实验结果     

SOI NMOS器件总剂量辐照退火特性分析

研究了在不同的温度和偏置条件下对SIMOX SOI MOSFET进行总剂量辐照的退火特性.结果发现,ON偏置时退火效应较显著,且高温时退火效应比常温时更明显.     

环境温度、电离辐射剂量率对NMOSFET器件特性参数的影响

研究了辐射环境温度、辐射剂量率、退火温度和退火偏置对CC4007NMOS器件阈值电压的影响.研究发现,低温(-30℃)辐照感生的氧化物陷阱电荷比室温(25℃)多,界面态电荷比室温要少;受不同γ剂量率辐射时,阈值电压的漂移程度不一样,在总剂量相同情况下,辐射剂量率高时,阈值电压的漂移量也大;辐照后,NMOS器件100℃退火速度要大于25℃退火速度,+5V栅偏压退火情况要大于浮空偏置情况.并对以上现象进行了分析和解释.     

环境温度、电离辐射剂量率对NMOSFET器件特性参数的影响

研究了辐射环境温度、辐射剂量率、退火温度和退火偏置对 CC40 0 7NMOS器件阈值电压的影响 .研究发现 ,低温 (- 30℃ )辐照感生的氧化物陷阱电荷比室温 (2 5℃ )多 ,界面态电荷比室温要少 ;受不同 γ剂量率辐射时 ,阈值电压的漂移程度不一样 ,在总剂量相同情况下 ,辐射剂量率高时 ,阈值电压的漂移量也大 ;辐照后 ,NMOS器件 10 0℃退火速度要大于 2 5℃退火速度 ,+5 V栅偏压退火情况要大于浮空偏置情况 .并对以上现象进行了分析和解释     

星用CMOS器件辐照损伤和退火效应研究

文章研究了ＣＭＯＳ器件＾６０Ｃｏγ射线的总剂量辐照实验以及辐照后在１００℃温度场下的退火效应。实验发现,辐照后,器件在加温和加偏条件下,可以加速ｎ沟器件界面态的增长和氧化物陷阱电的退火,而加温浮空偏置条件下有利于ｎ沟器件界面态的退火,但在１００℃温度场中,两种偏置条件都有利于ｐ沟器件氧化物陷阱电荷和界面的退火。     

低剂量率下MOS器件的辐照效应

对MOS器件在低剂量率γ射线辐射条件下的偏置效应进行了研究。对不同偏置及退火条件下MOS器件辐照后的阈值电压漂移进行了对比。结果表明，偏置在MOS器件栅氧化层内产生电场，增强了辐照产生电子-空穴对的分离，同时，影响了正电荷（包括空穴和氢离子）的运动状态；此外，偏置对退火同样有促进作用。     

双极线性稳压器(LM317)的电离总剂量效应及剂量率的影响

对一款双极集成、三端线性稳压器LM317进行了不同偏置、不同剂量率条件下的电离辐射效应及室温退火特性研究。研究结果表明:器件输出电压、输入输出压差等敏感参数在电离辐射环境下发生了不同程度的变化,且在零偏偏置辐照下的变化比工作偏置辐照下的变化大;在零偏偏置条件,总剂量相同时低剂量率辐照下的损伤明显大于高剂量率辐照,表现出低剂量率损伤增强效应;在工作偏置条件,高剂量率辐照下的损伤大于低剂量率辐照下的损伤,但随后的退火实验中恢复到低剂量率辐照损伤水平,表现出时间相关效应。对稳压器辐射敏感参数的影响因素和不同偏置下的剂量率影响进行了分析和讨论。     

JFET输入运算放大器辐射损伤的退火行为

The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers （op-amps） were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.     

Annealing behavior of radiation damage in JFET-input operational amplifiers

The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers (op-amps) were investigated. High-and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.     

双极运算放大器辐射损伤的时间相关性

通过一系列辐照实验对双极运放辐射损伤的时间相关性进行了研究.结果表明,双极运放的辐射损伤与时间有着密切的关系,通过调整辐照剂量率、退火温度及时间等参数进行循环辐照-退火实验,可以测评出器件的低剂量率辐射损伤情况,并从界面态角度对这种损伤机理进行了分析.     

双极器件和电路的不同剂量率的辐射效应研究

对不同类型和型号的国产及进口双极晶体管和运算放大器的不同剂量率的辐照效应及退火特性进行了研究。结果表明:在辐照的剂量率范围内,无论是国产还是进口的双极晶体管,都有明显的低剂量率辐照损伤增强现象,且NPN管比PNP管明显。双极运算放大器的研究结果显示:不同电路间的辐照响应差异很大,对有些电路而言,剂量率越低,损伤越大。有些电路虽有不同剂量率的辐照损伤差异,但这种差异可通过室温退火得到消除,因而只是时间相关的效应。文中对引起双极器件辐照损伤差异的机理进行了探讨。     

运算放大器的速度/带宽优化设计

文章简要介绍了电流反馈和电压反馈运算放大器的基本原理,从理论上分析了两种运放的频率等效模型,进而提出了提高运算放大器速度和带宽的有效途径.另外,文章还对高速运算放大器使用过程中的稳定性进行了简要分析.     

Self-biasing of folded cascode CMOS op-amps

In cascode CMOS op-amps a large number transistors are biased using independent standard bias circuits. This results in numerous drawbacks, namely, an area and power overhead, and high sensitivity of the bias point to process variations. In this paper we present a self-biasing technique for folded cascode CMOS op-amps that uses no additional devices and no bias voltages other than the two supply rails. The resulting self-biased op-amps are free from the above mentioned drawbacks and exhibit the same performance as existing folded cascode op-amps. This is achieved by following transistor sizing constraints derived through detailed circuit analysis. The technique is applied to an existing high performance op-amp. Simulation results show that the high performance is maintained while nine bias voltages are eliminated.     

运算放大器中JFET对管的制作技术及其发展前景

JFET与双极器件相结合,可以获得高速/宽带/高输入阻抗的运算放大器。但由于工艺水平的限制,Bi-JFET单片兼容工艺中的场效应器件的特性并不很理想,影响了电路的性能。目前的高性能场效应运放,基本上是采用高性能JFET对管与纵向p-n-p、n-p-n混合组装而成。本文分析了场效应运放中场效应器件制作技术的发展,提出了两种新的单片高性能JF-ET对管与高性能纵向p-n-p、n-p-n兼容工艺,以期能结合自动稳零技术,制造出单片高速、宽带、高输入阻抗、低失调、高精度运放。     

一种应用于CMOS运放的高速间接反馈补偿技术

给出一种应用于CMOS运放的高速间接反馈补偿技术,用这种间接反馈补偿技术设计的CMOS运算放大器与(Miller)直接补偿相比,具有高速、低功耗、很高的电源抑制比优点,并极大地减小了版图尺寸。通过电路级仿真,对两种反馈补偿技术进行比较,结果验证了间接反馈补偿技术的优越性。     

AC coupled three op-amp biopotential amplifier with active DC suppression

A three op-amps instrumentation amplifier (I.A) with active dc suppression is presented. dc suppression is achieved by means of a controlled floating source at the input stage, to compensate electrode and op-amps offset voltages. This isolated floating source is built around an optical-isolated device using a general-purpose optocoupler, working as a photovoltaic generator. The proposed circuit has many interesting characteristics regarding simplicity and cost, while preserving common mode rejection ratio (CMRR) and high input impedance characteristics of the classic three op-amps I.A. As an example, a biopotential amplifier with a gain of 80 dB, a lower cutoff frequency of 0.1 Hz, and a dc input range of +/- 8 mV was built and tested. Using general-purpose op-amps, a CMRR of 105 was achieved without trimmings.     

New Rc-Active oscillator configuration employing unity-gain amplifiers

A new sinusoidal oscillator configuration is proposed which employs op-amps as unity-gain amplifiers. The proposed circuit offers independent single-element controls for adjusting the condition of oscillation and oscillation frequency and has very good frequency stability. Practically, the circuit works well over a frequency range much higher than possible with other known types of oscillators (which use op-amps as ±K-gain or infinite-gain VCVSs). The proposed configuration also provides useful prototypes to derive novel switched-capacitor oscillators.