TiB2/AlSi10Mg激光选区熔化成形工艺研究

目的 针对TiB2/AlSi10Mg开展激光选区熔化成形研究,获得工艺参数影响规律并优化工艺参数.方法 采用正交试验法设计三因素四水平正交试验,进行TiB2/AlSi10Mg激光选区熔化成形,分别研究激光功率、扫描速度、扫描间距等3种工艺参数对TiB2/AlSi10Mg致密度和硬度的影响规律,分析激光能量密度对铝合金内...     

Influence of the annealing and defects on the VHCF behavior of an SLM AlSi10Mg alloy

In the paper, the influence of the annealing temperature on the Very High Cycle Fatigue (VHCF) of AlSi10Mg specimens produced through selective laser melting (SLM) is experimentally assessed. VHCF tests at 20 kHz are carried out on Gaussian specimens subjected to a heat treatment suggested by the system supplier (heating for 2 hours to 320°C and air cooling) and to a heat treatment proposed by the authors (heating for 2 hours to 244°C and air cooling). The defects originating failure and the conditional P‐S‐N curves are compared. Experimental results show that an annealing temperature of 320 ° C induces the spheroidization of the Si network, which enhances the ductility but has a negative effect on the VHCF response. On the contrary, by reducing the heating temperature to 244 ° C , the original as‐built microstructure is not altered and the minimization of the residual stresses permits to enhance the VHCF response.