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碳化硅多孔陶瓷制备技术研究进展 总被引:1,自引:1,他引:1
分别对碳化硅多孔陶瓷的主要制备方法进行了阐述,分析了这些制备方法的主要优缺点,并指出将来的研究重点应是高性能碳化硅多孔陶瓷的低成本制备技术及其应用领域的进一步拓展。另外,各种制备工艺条件同碳化硅多孔陶瓷性能之间的内在联系研究也应该进一步深化。 相似文献
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注浆成型SiC多孔陶瓷的工艺和性能研究 总被引:8,自引:0,他引:8
选用SiC颗粒作为多孔陶瓷的骨料材料,长石、石英、粘土组成的低共熔混合物形成晶界玻璃相结合剂,活性炭作为成孔剂,采用注浆成型工艺,对多孔陶瓷的性能进行了研究.SiC骨料颗粒的Zeta电位等电点对应的pH值为5.2,注浆浆料的pH值在8~12的范围内具有很好的流动性和稳定性;烧成温度的提高,使SiC多孔陶瓷的气孔尺寸分布范围缩小,但基本孔径不变;晶界玻璃相的高温粘性流动在SiC晶粒之间形成“桥架”结构,提高了两者之间的粘结能力;高温下,SiC颗粒的氧化产物参与晶界反应,生成新的针状莫来石相,使SiC多孔陶瓷的强度出现异常提高. 相似文献
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原位反应结合碳化硅多孔陶瓷的制备与性能 总被引:2,自引:0,他引:2
以碳化硅(SiC)和氧化铝(Al2O3)为起始原料、石墨为造孔剂, 通过原位反应结合工艺制备SiC多孔陶瓷. XRD分析表明多孔陶瓷的主相是SiC, 结合相是莫来石与方石英; SEM观察到多孔陶瓷具有相互连通的开孔结构. 坯体在烧结前后具有很小的尺寸变化, 线收缩率约在±1.5%内. 多孔陶瓷的开口孔隙率随烧结温度和成型压力的增大而减小, 随石墨加入量的增加而增大; 而体密度具有相反的变化趋势. 随着石墨粒径的增大, 多孔陶瓷的孔径分布呈现双峰分布. 抗弯强度随烧结温度和成型压力的增大而增大, 随石墨加入量的增大而减小. 于1450℃保温4h烧成的样品在0~800℃的平均热膨胀系数为6.4×10-6/K. 多孔陶瓷还表现出良好的透气性、抗高温氧化和耐酸腐蚀性, 但耐碱腐蚀性相对较差. 相似文献
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采用SiC粉体与聚碳硅烷(PCS)为原料浇注成型低温烧结制备SiC多孔陶瓷,研究了PCS含量对SiC多孔陶瓷性能的影响。结果表明,PCS含量大于2wt%时可浇注成型,PCS经烧结后生成裂解产物将SiC颗粒粘结起来。所得SiC多孔陶瓷孔径呈单峰分布、孔径分布窄、热膨胀系数低、烧结过程中线收缩率小。随着PCS含量的增大烧成SiC多孔陶瓷的孔隙率降低,但强度显著提高。PCS含量为6wt%时多孔陶瓷的孔隙率、弯折强度和线收缩率分别为36.2%、33.8MPa和0.42%。 相似文献
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以碳化硅(SiC)和不同铝源(多孔Al2O3/纳米Al2O3/Al(OH)3)为起始原料,通过原位反应结合工艺制备莫来石结合碳化硅多孔陶瓷。主要研究了不同铝源及温度对多孔陶瓷抗弯强度、气孔率、线性伸缩率等性能的影响,并采用XRD和SEM分析表征了样品的物相组成与断面形貌。结果表明:以多孔Al2O3为铝源,在1450℃下保温3h制备的碳化硅多孔陶瓷的综合性能最优,其强度为58 MPa,气孔率为41.9%;烧结温度对3种铝源所制备的多孔陶瓷具有相同的影响,随着温度的升高,强度逐渐升高,气孔率逐渐降低,线性收缩率逐渐增大。 相似文献
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采用聚氨酯海绵为多孔模板, 浸渍有机硅树脂后在Ar气氛中原位合成了SiC纳米线。采用TG、XRD、SEM和TEM等分析测试手段对样品进行了表征, 研究了保温时间对合成SiC纳米线的影响, 并探讨了SiC纳米线的生长机理。研究结果表明: SiC纳米线生长在多孔陶瓷中, 纳米线长度达几十微米, 单根纳米线的直径不均一。SiC纳米线的生长机理为VS生长模式。随着保温时间的延长, 纳米线的数量增加, 形貌发生了变化, 且多孔陶瓷的比表面积明显增大, 体积电阻率降低。 相似文献
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Dielectric Properties of Porous Reaction-boned Si3N4 Ceramics with Controlled Porosity and Pore Size
This paper presents the microwave dielectric properties of reaction bonded porous silicon nitride ceramics with variant porosity and pore size, which were prepared by adding pore-forming agent grains into the silicon powders. The experimental results show that the dielectric constant and the dielectric loss of the samples reduce evidently with increasing porosity in the sample. When the porosity is constant, the dielectric constant and the dielectric loss of the ceramics decrease visibly as the pore size increases. Among all the obtained samples, the minimum dielectric constant is about 2.4. 相似文献
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研究了采用化学气相渗透工艺制备2D-SiCf/SiC复合材料的真空蠕变性能, 蠕变温度为 1200、1300和1400 ℃, 应力水平范围为100~140 MPa。用扫描电子显微镜(SEM)和高分辨透射电子显微镜(TEM)分别观察分析了2D-SiCf/SiC复合材料的蠕变断口形貌和微观结构。结果表明, 2D-SiCf/SiC复合材料的主要蠕变损伤模式包括基体开裂、界面脱粘和纤维蠕变。桥接裂纹的纤维发生蠕变并促进了基体裂纹的张开、位移增大, 进一步导致复合材料蠕变断裂, 在复合材料蠕变过程中起决定性作用。2D-SiCf/SiC复合材料的蠕变性能与SiC纤维微观结构的稳定性密切相关。在1200 ℃/100 MPa时, 纤维晶粒没有长大, 复合材料的蠕变断裂时间大于200 h; 蠕变温度为1400 ℃时, 纤维晶粒明显长大, 2D-SiCf/SiC复合材料蠕变断裂时间缩短至8.6 h, 稳态蠕变速率增大了三个数量级。 相似文献
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Hao Du ;Dongzhu Lu ;Jianzhong Qi ;Yanfang Shen ;Lisong Yin ;Yuan Wang ;Zhongguang Zheng ;Tianying Xiong 《材料科学技术学报》2014,30(9):934-938
The purpose of this paper is to investigate heat dissipation performance of porous copper with long cylindrical pores fabricated by a unidirectional solidification method. Three samples with porosity of 29.87%, 34.47% and 50.98% were chosen and cut into size of 60 mm (length) × 26 mm (width) × 2 mm (thickness) along the vertical direction of pore axis. Their heat dissipation performance was evaluated by a nonsteady method in air and compared to those of not only bulk copper but also bored coppers with porosity of 30.61% and 32.20%. It is found that the porous copper dissipated heat faster by a forced air convection than that by natural convection from 80 ℃ to room temperature and both porosity and pore size play an important role in the performance for the porous copper. Furthermore, the heat dissipation rate is higher when the forced air was circulated along the specimens than that perpendicular to the specimens for the porous copper. It is revealed that porous copper with bigger porosity and a proper pore size possesses a higher heat dissipation rate. It is concluded that the porous copper with elongated cylindrical pores has larger heat dissipation performance than both the bulk copper and the bored copper, which is attributed to its higher specific surface area. Application of the porous copper for heat dissipation is promising. 相似文献
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以硅藻土为主要硅源,同时配合SiC、Al_2O_3、滑石粉末为主要原料,通过反应烧结技术制备SiC/堇青石复相多孔陶瓷,研究了不同原料配比对SiC/堇青石复相多孔陶瓷的相组成、显微结构、抗弯强度、气孔率的影响,同时在得出最优配比组的基础上,研究石墨造孔剂的含量、碳化硅颗粒粒径、孔径分布等因素对SiC/堇青石复相多孔陶瓷的影响。结果表明:当SiC与其余物料理论质量比为8∶2时,在1250℃下保温3h制备的样品综合性能最佳,其气孔率为37.721%,抗弯强度达到49.1887 MPa。 相似文献
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利用海藻酸钠的离子凝胶过程, 采用溶剂置换结合冷冻干燥的工艺, 成功制备了具有高度有序六方排列的直通孔多孔氧化铝陶瓷, 整个工艺过程及所使用的原料都是环境友好的。研究结果表明, 1500℃烧结2 h样品的孔径尺寸在200 μm左右, 且与固相含量的关系不大, 而孔壁上存在0.3 μm~0.5 μm的小孔。通过控制浆料中氧化铝的固相含量可以对材料的性能进行有效地调控, 研究表明, 随着固相含量从5wt%提高到15wt%, 材料的密度从0.87 g/cm3提高到1.16 g/cm3, 渗透率从2.57×10-11 m2下降到2.16×10-11 m2, 而抗压强度从(18.9±3.2) MPa提高到(44.2±5.4) MPa, 平行孔道方向的热导率从2.1 W/(m·K)提高到3.1 W/(m·K), 而垂直孔道方向的热导率从1.3 W/(m•K)提高到1.7 W/(m·K), 并且平行孔道方向热导率的增加幅度要明显大于垂直孔道方向。 相似文献
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构建多孔碳化硅纳米线(SiCNWs)网络并控制化学气相渗透(CVI)过程,可设计并获得轻质、高强度和低导热率SiC复合材料。首先将SiCNWs和聚乙烯醇(PVA)混合,制备具有最佳体积分数(15.6%)和均匀孔隙结构的SiCNWs网络;通过控制CVI参数获得具有小而均匀孔隙结构的SiCNWs增强多孔SiC(SiCNWs/SiC)陶瓷基复合材料。SiC基体形貌受沉积参数(如温度和反应气体浓度)的影响,从球状颗粒向六棱锥颗粒形状转变。SiCNWs/SiC陶瓷基复合材料的孔隙率为38.9%时,强度达到(194.3±21.3) MPa,导热系数为(1.9 ± 0.1) W/(m∙K),显示出增韧效果,并具有低导热系数。 相似文献
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Shoujun Wu Laifei Cheng Litong Zhang Yongdong Xu Qing Zhang 《Materials Science and Engineering: B》2006,130(1-3):215-219
Oxidation behaviors of three-dimensional woven C/PyC/SiC and SiC/PyC/SiC prepared by CVI processing were investigated in an O2-Ar atmosphere at 600 °C, 900 °C and 1200 °C, respectively, by using thermogravimetric analysis. After machining, both composites should be protected by CVD SiC coating, which was demonstrated effectively in improving the oxidation resistance of both composites. The oxidation behavior of SiC/PyC/SiC was different from that of C/PyC/SiC. The oxidation kinetics of C/PyC/SiC was controlled by the rate of the reaction between carbon and oxygen at 600 °C and by the oxygen diffusion through the coating microcracks at 900 °C. The oxidation kinetics of SiC/PyC/SiC at both 600 °C and 900 °C were assumed to be controlled by the oxygen diffusion through channels of coating and matrix defects and looped pipelines instead of PyC interphase. At 1200 °C, the oxidation was controlled by oxygen diffusion through the SiO2 scale, which took place mainly on the surfaces of both composites. 相似文献