Enhanced excitonic emission and visible luminescence of chemically synthesized ZnS:Co film phosphors

Undoped and Cobalt doped ZnS thin films have been synthesised using chemical bath deposition technique. The X-ray diffraction pattern revealed a hexagonal structure for all the films. An increase in Co/Zn molar ratio resulted in a decrease in the intensity of diffraction peak corresponding to (100) plane and increase in crystallite size of the samples. The transmittance of the samples in the visible region was found to improve on doping. The optical band gap was found to vary from 3.46 to 3.66 eV with the incorporation of cobalt ions. The scanning electron microscope images of the samples exhibit a denser and more compact morphology for the doped films as compared to the undoped film. Photoluminescence studies reveal that all samples exhibit rare excitonic or near band-edge luminescence along with emissions in the visible region. The luminescence efficiency of ZnS film is appreciably enhanced with increase in concentration of the dopant.     

Effect of complexing agent on the chemically deposited ZnS thin film

Zinc sulfide (ZnS) thin films have been deposited onto fluorine doped tin oxide and microscopic glass substrates from an aqueous alkaline reaction by chemical bath deposition. The effect of concentrations of hydrazine hydrate (HyH) (complexing agent) on the deposit is studied. X-ray analysis confirm the growth of nanocrystalline ZnS thin films with reflections (111), (220) and (311) correspond to cubic crystalline phase. TEM results support the growth of cubic ZnS layers. The energy band gap was successfully tailored from 2.77 to 3.80 eV. Photoluminescence study indicates a strong band-edge emission with some defect like vacancies. It was also noticed that HyH plays an important role on the nucleation. The remarkable improvement in the growth rate of ZnS thin films have been observed upon increasing the contents of HyH. Nearly stoichiometric ZnS layer was obtained upon annealing prepared with 2.5 M HyH. The crystallinity was found to be increased upon annealing the layers. The ideality factor for the ZnS layers prepared with 0 and 1.0 M HyH were obtained?~1.71 and 1.24, respectively. The capacitance–voltage plots behave according to Schottky–Mott theory. The doping concentrations?~10¹⁷ and 10¹⁸ cm^?3 were calculated for the layers deposited with 0 and 1.0 M HyH, respectively.     

Structural,optical, photocurrent and mechanism-induced photocatalytic properties of surface-modified ZnS thin films by chemical bath deposition

ZnS thin films were prepared by chemical bath codeposition using ZnSO₄–ZnCl₂ or Zn(CH₃COO)₂–ZnCl₂ as zinc ion sources. The presence of SO₄ ^2? favors the heterogeneous growth of ZnS thin film. The coexistence of two zinc salts impedes the formation of homogeneous precipitation and improves the growth rate of ZnS film. XRD and HRTEM results show that all the samples exhibit the cubic structure. EDS analysis shows that Zn/S atom ratios from the codeposition are closer to 1:1 than those deposited from a single zinc salt, and ZnS thin films of S3 and S7 are very uniform without stirring. FTIR reveals that –NH₂ group as a surface modifier is adsorbed on the surface of ZnS nanoparticles. Raman spectra further reveal that S3, S4 and S7 form the ZnS films, and ZnO phase is present in short or middle range of the S6 nanocrystal, indicating that different amounts of zinc salts affect the structure of ZnS films significantly after three 2.5 h deposition cycles. The grain sizes determined by FESEM are inversely proportional to RMS determined by AFM. The band gap values of ZnS thin films agree well with the results of HRTEM. The photocurrent responses of different samples are similar, indicating that different amounts of zinc salts have little effect on the photocurrent of ZnS films. The photocatalytic performance of S6 and S8 is much better than that of S1–S5. S6 decomposes 65 % of methyl orange within 3 h, and its K value is 4.78 × 10^?1 h^?1. The photocatalytic performance is induced by the growth mechanism, which determines the grain size of ZnS thin film. The tendency of grain sizes of ZnS films agrees well with that of photocatalytic performance, especially under the clusters by clusters deposition.     

Effect of doping concentration on UV accelerated chemically deposited ZnS:Mn thin films

Pure and Mn alloyed ZnS thin films have been prepared by UV accelerated chemical deposition technique which is simple, economic and easy to monitor. Influence of doping concentration on ZnS thin films was investigated through the structural, compositional, morphological, optical and luminescent studies. The XRD studies confirmed the formation of crystalline films with hexagonal structure. In doped samples the intensities of the prominent peaks increased up to 0.5 wt% Mn and then decreased. The optimum concentration means the amount required to get most suitable characteristics for photovoltaic application. The thickness of the films and the sizes of the crystallites varied in consistent with the structural results. Crystallites became larger in size on doping and appeared to be denser than undoped film. Various structural parameters like stress and micro strain were calculated. The observed strain is compressive in nature which rapidly increased with doping and then remained almost same with doping concentration. The SEM studies revealed the formation of films with almost similar morphology of spherical architectures. All the films exhibited uniform transmission in the high visible region, with a maximum of 80 % for the sample with optimum Mn concentration. Both direct and indirect band gap decreased due to the incorporation of Mn, but showed a blue shift in the fundamental absorption edge with doping concentration up to the optimum dopant content. Undoped and doped films exhibit five distinct luminescence peaks located around 391, 451, 458, 482 and 492 nm. The observed variation in the intensity of the luminescence in doped films clearly indicated the influence of thickness of the films which varied on doping.     

Chemical bath deposition of CdS thin films doped with Zn and Cu

Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ZnCl₂ and CuCl₂ were incorporated as dopant agents into the conventional CdS chemical bath in order to promote the CdS doping process. The effect of the deposition time and the doping concentration on the physical properties of CdS films were investigated. The morphology, thickness, bandgap energy, crystalline structure and elemental composition of Zn- and Cu-doped CdS films were investigated and compared to the undoped CdS films properties. Both Zn- and Cu-doped CdS films presented a cubic crystalline structure with (1 1 1) as the preferential orientation. Lower values of the bandgap energy were observed for the doped CdS films as compared to those of the undoped CdS films. Zn-doped CdS films presented higher thickness and roughness values than those of Cu-doped CdS films. From the photoluminescence results, it is suggested that the inclusion of Zn and Cu into CdS crystalline structure promotes the formation of acceptor levels above CdS valence band, resulting in lower bandgap energy values for the doped CdS films.     

Exciting Dilute Magnetic Semiconductor: Copper-Doped ZnO

The present study is focused on the copper-doped ZnO system. Bulk copper-doped ZnO pellets were synthesized by a solid-state reaction technique and used as target material in pulsed laser deposition. Thin films were grown for different Cu doped pellets on sapphire substrates in vacuum (5×10^?5 mbar). Thin films having (002) plane of ZnO showed different oxidation states of dopants. M–H curves exhibited weak ferromagnetic signal for 1–3 % Cu doping but for 5 % Cu doped thin film sample showed the diamagnetic behavior. For deeper information, thin films were grown for 5 % Cu doped ZnO bulk pellet in different oxygen ambient pressures and analyzed. PL measurement at low temperature showed the emission peak in thin films samples due to acceptor-related transitions. XPS results show that copper exists in Cu²⁺ and Cu⁺¹ valence states in thin films and with increasing O₂ ambient pressure the valence-band maximum in films shifts towards higher binding energy. Furthermore, in lower oxygen ambient pressure (1×10^?2 mbar) thin films showed magnetic behavior but this vanished for the film grown at higher ambient pressures of oxygen (6×10^?2 mbar), which hints towards the decrease in donor defects.     

Optical and electrical properties of Bi doped ZnO thin films deposited by ultrasonic spray pyrolysis

Undoped Zinc oxide (ZnO) and Bismuth doped zinc oxide (ZBO) thin films have been prepared by a simple and inexpensive technique namely ultrasonic spray pyrolysis. Films were prepared from an aqueous solution of zinc acetate on glass and silicon substrates at temperature of 350 °C. Doping is achieved by adding a small amount of Bi(NO₃), H₂O salt to the starting solution which is mixed thoroughly prior to spraying. The goal of this work is to study the influence of doping (Bi) with different concentrations on the structural, optical, and electrical properties of Bi doped ZnO films. Structural analysis shows that the ZBO layers are polycrystalline with a wurtzite structure and (100) preferential orientation which disappears gradually with increasing doping concentration. The optical transmittance average of all films, regardless the doping concentration, was higher than 80% in the visible range. The obtained films gaps values vary in the range from 3.19 to 3.24 eV and the Urbach energy lies in the range 11 to 530 meV. The measured conductivity, in dark and at room temperature, varies with four order of decade level (from 10^?3 to 10⁺¹ (??cm)^?1)with increasing Bi doping level.     

Influence of different conducting substrates on magnetic properties of electrodeposited Ni–Fe thin films

Electrodeposition of Ni–Fe soft magnetic alloy on copper and stainless steel substrates was performed in chloride bath. The deposition parameters such as current density, pH, temperature and deposition time have been investigated. From the investigation the optimized deposition parameters were current density 3.5 mA/cm², pH 3, temperature 30 °C and deposition time 15 min. The Ni–Fe magnetic alloys deposited on copper and stainless steel substrates under optimized deposition parameters are subjected to various characterizations. The structural and surface morphology of the Ni–Fe films were detected by using X-ray diffractogram (XRD) and scanning electron microscope (SEM) respectively. The constituents in the films were determined by energy dispersive X-ray spectroscopy (EDAX) technique. The magnetic properties such as the coercivity (H_c) and saturation magnetization of the films were studied with the help of vibrating sample magnetometer (VSM). From the magnetic studies it is concluded that the grain size are create a considerable impact on magnetic behavior of the films on both the substrates. The films prepared on stainless steel substrate of 0.1 M concentration at optimized deposition parameters exhibits higher coercivity (5010 Oe) which seems to be ideal for magnetic sensor applications.     

Optical properties of nanocrystalline ZnS:Mn thin films prepared by chemical bath deposition method

Nanocrystalline ZnS:Mn thin films were fabricated by a chemical bath deposition route on glass, silicon, and quartz substrates using a weak acidic bath, in which citrate ions acts as a nontoxic complexing agent for zinc ions and thioacetamide acts as a source of sulfide ions at 60 °C. The composition of films were characterized by energy-dispersive X-ray spectrometer, inductively coupled plasma atomic emission spectroscopy, Rutherford backscattering, and attenuated total reflection-Fourier transform infrared spectroscopy. X-ray diffraction pattern and transmission electron microscopy image confirm that the films have nanocrystalline nature. The band gap energy of ZnS:Mn films is blue-shifted by about 0.3 eV with respect to the bulk value (3.67 eV), probably due to the quantum size effect as expected from the nanocrystalline nature of the ZnS:Mn thin films. The dispersion and optical constants of the films were determined. These parameters changed with the deposition time.     

Electrical properties of chemically prepared nonstoichiometric CuIn(S,Se)2 thin films

Polycrystalline thin films of copper indium sulphoselenide [CuIn(S,Se)₂] were deposited on glass substrate by chemical bath deposition technique. The deposition parameters such as pH, temperature and time were optimized. A set of films having different elemental compositions was prepared by varying Cu/In ratio from 1·87–12·15. The films were characterized by X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDAX). The chemical composition of the CuIn(S,Se)₂ was found to be nonstoichiometric. The d.c. conductivities of the films were studied below and near room temperature. The thermo-electric power of the films was also measured and type of semiconductivity was ascertained.     

Influence of Li doping on domain wall motion in Pb(Zr0.52Ti0.48)O3 films

Li-doped PbZr_0.52Ti_0.48O₃ (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1–3 mol% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants ε _init increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol% Li doping.     

Structural, photoluminescence and optical properties of chemically deposited (Cd1−xBix)S thin films as a function of dopant concentration

In this study, (Cd_1?xBi_x)S thin films were successfully deposited on suitably cleaned glass substrate at 60 °C temperature, using the chemical bath deposition technique. After deposition, the films were also annealed at 400 °C for 2 min in air. The structural properties of the deposited films were characterized using X-ray diffraction and AFM. Formation of cubic structure with preferential orientation along the (111) plane was confirmed together with BiS second phase from structural analysis. The interplanar spacing, lattice constant, and crystallite size of (Cd_1?xBi_x)S thin films were calculated by the XRD. The crystallite size of the un-doped CdS thin films was found to be 7.84 nm, which increased to 11.1 nm with increasing Bi content from 0 to 10 %. The surface roughness of the films was measured by AFM studies. The photoluminescence spectra were observed at red shifted band edge peak with increasing doping concentration of Bi from 0 to 5 % in the un-doped CdS thin films. The optical properties of the films are estimated using optical absorption and transmission spectra in the range of 400–800 nm using UV–VIS spectrophotometer. The optical band gap energy of the films was found to be decreased from 2.44 to 2.23 eV with the Bi content being from 0 to 5 %. After annealing, the band gap of these films further decreased.     

Effect of aluminum doping on the properties of PEC cells formed with CdS:Al films

Aluminum doped and undoped CdS films were prepared by chemical bath deposition technique and the photoelectrochemical (PEC) properties have been studied by forming doped CdS/NaOHNa₂SS/C junction. Better results are obtained with 0.1 wt% Al doped CdS films. These results are discussed with the help of the optical and transport properties of the Al doped CdS films.     

Structural,optical, electrical and photo-electrochemical studies on indium doped Cd0.6Hg0.4Se thin films

Indium doped Cd_0.6Hg_0.4Se thin films have been prepared using simple chemical bath deposition technique with the objectives to study structural, optical, electrical changes taking place upon doping and to test their electrochemical properties. The ‘as deposited’ thin films were characterized by XRD, AAS, EDAX SEM, optical absorption, thermo-electrical techniques and photo-electrochemical studies. The donor atoms were found to dissolve substitutionally in the lattice of Cd_0.6Hg_0.4Se up to a certain range of doping concentration. The films were polycrystalline in the single cubic phase without appreciable lattice distortion. The crystallinity, grain size, band gap, conductivity were found to increase with increase in indium content up to 0.1 mol%. The carrier concentration and mobility were found to depend on indium content and temperature. An enhancement in the PEC efficiency, V_oc, I_sc and the fill factor has been found.     

Synthesis and characterization of Sn1Mg1−xO2 thin films fabricated by aero-sole assisted chemical vapor deposition

In order to achieve high conductivity and transmittance of transparent conducting oxide, Mg doped SnO₂ (Mg_xSn_1?xO₂) thin films have been fabricated and characterized to investigate their structural and optical properties. The Mg_xSn_1?xO₂ thin films have been deposited on glass substrate using aero-sole assisted chemical vapor deposition. The molar concentration of Mg contents was changed from 0 to 8 %. The confirmation of tetragonal structure and particle size (32–87 nm) of thin films was analyzed by X-ray diffraction. The surface roughness has been found to decrease with the increase of the dopant concentration as investigated by atomic force microscopy. The optical transmission increased from 54 to 78 % and the band gap of pure SnO₂ has been found to be 3.75 eV while it rises up to 3.88 eV with increasing Mg doping. The sheet resistance (R_s) of undoped SnO₂ is maximum which become lowest at 4 % Mg doped SnO₂.     

Effect of copper content on optostructural, morphological and photoelectrochemical properties of MoBi2−x Cu x Se4 thin films

In the present investigation we have reported a facile chemical route for the deposition of MoBi_2?x Cu _x Se₄ (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) thin films at room temperature by using a simple and self-organised arrested precipitation technique. The deposited samples were characterised for their structural, morphological, optical and photoelectrochemical properties. X-ray diffraction patterns revealed that, undoped MoBi₂Se₅ shows a rhombohedral crystal structure, while mixed rhombohedral and orthorhombic crystal structures were observed with shifting of diffraction peaks after copper doping. The scanning electron microscopy and transmission electron microscopy images revealed that the surface morphology was improved with copper content. Compositional analysis of all samples was carried out by using energy dispersive X-ray spectroscopy. The direct band gap energy of all the samples estimated from absorbance spectra varies from 1.26 to 1.60 eV. The photoelectrochemical properties of all samples were studied in I^?/I₃ ^? redox electrolyte which demonstrated that the electrical conductivity was transformed from n-type to p-type after copper doping and photoelectrochemical response of p-type MoBi_2?x Cu _x Se₄ thin film electrode was improved with increasing copper content. The mechanism of change in the type of electrical conductivity and augmentation in photoelectrochemical response after copper doping are discussed.     

Structural and optical properties of CdS thin films prepared by chemical bath deposition at different ammonia concentration and S/Cd molar ratios

CdS thin films were prepared by chemical bath deposition technique using the precursors of SC(NH₂)₂, CdCl₂, NH₄Cl, NH₃·H₂O and deionized water. The obtained thin films were characterized by scanning electron microscopy, X-ray diffraction, energy dispersive spectrometer, UV–VIS specrophotometry and photoluminescence spectroscopy. The morphology, structural and optical properties of CdS thin films were investigated as a function of ammonia concentration and S/Cd molar ratios in precursors. The results reveal that morphology of CdS films change from flake like into spherical particle like, crystal structure from wurtzite structure to zinc blende structure, S/Cd atom ratios in CdS thin films increase and optical band gap E _g decrease with increasing ammonia concentration in precursors. The room temperature photoluminescence spectrum of CdS thin films shows a strong peak at about 500 nm and a weak peak at about 675 nm.     

Active Soldering of ZnS–SiO2 Sputtering Targets to Copper Backing Plates Using an Sn56Bi4Ti(Ce,Ga) Filler

ZnS–SiO₂ targets have been directly soldered to copper backing plates at 180°C in air using an Sn56Bi4Ti(Ce, Ga) filler. The affinity of cerium to oxygen protects titanium from oxidation, allowing titanium to react with ZnS–SiO₂ sputtering target. The shear strengths are 1.7, 8.7, and 1.3 MPa for ZnS–SiO₂/ZnS–SiO₂, copper/copper and ZnS–SiO₂/copper joints, respectively. EPMA elemental mapping shows that aging test at 120° for 100 hours enhanced the segregation of titanium at the ZnS–SiO₂/solder interfaces. The shear strength of ZnS–SiO₂/copper joint after aging test is 1.3 MPa that shows no trace of degradation compared to the initial quality of the samples.     

Sulfurization time effects on the growth of Cu2ZnSnS4 thin films by solution method

Cu₂ZnSnS₄ (CZTS) films were obtained by sulfurizing (Cu, Sn) S/ZnS structured precursors prepared by a combination of the successive ionic layer absorption and reaction method and the chemical bath deposition method, respectively. The effect of sulfurization time on structure, composition and optical properties of these CZTS thin films was studied. The results of energy dispersive spectroscopy indicate that the annealed CZTS thin films are of Cu-poor and Zn-rich states. The X-ray diffraction studies reveal that Cu_2?x S phase exists in the annealed CZTS thin film prepared by sulfurization for 20 min, while the Raman spectroscopy analysis shows that there is a small Cu₂SnS₃ phase existing in those by sulfurization for 20 and 40 min. The band gap (E _g ) of the annealed CZTS thin films, which are determined by reflection spectroscopy, varies from 1.49 to 1.56 eV depending on sulfurization time. The best CZTS thin film is the one prepared by sulfurization for 80 min, exhibiting a single kesterite structure, dense morphology, ideal band gap (E _g  = 1.55 eV) and high optical absorption coefficient (>10⁴ cm^?1).     

Low indium content In–Zn–O system towards transparent conductive films: structure,properties and comparison with AZO and GZO

In this work, low content indium doped zinc oxide (IZO) thin films were deposited on glass substrates by RF magnetron sputtering using IZO ceramic targets with the In₂O₃ doping content of 2, 6, and 10 wt%, respectively. The influences of In₂O₃ doping content and substrate temperature on the structure and morphology, electrical and optical properties, and environmental stability of IZO thin films were investigated. It was found that the 6 wt% doped IZO thin film deposited at 150?°C exhibited the best crystal quality and the lowest resistivity of 9.87?×?10^?4 Ω cm. The corresponding Hall mobility and carrier densities were 9.20 cm² V^?1 s^?1 and 6.90?×?10²⁰ cm^?3, respectively. Compared with 2 wt% Al₂O₃ doped ZnO and 5 wt% Ga₂O₃ doped ZnO thin films, IZO thin film with the In₂O₃ doping content of 6 wt% featured the lowest surface roughness of 1.3 nm. It also showed the smallest degradation with the sheet resistance increased only about 4.4% at a temperature of 121?°C, a relative humidity of 97% for 30 h. IZO thin film with 6 wt% In₂O₃ doping also showed the smallest deterioration with the sheet resistance increased only about 2.8 times after heating at 500?°C for 30 min in air. The results suggested that low indium content doped ZnO thin films might meet practical requirement in environmental stability needed optoelectronic devices.