Enhancing Light Emission in Interface Engineered Spin‐OLEDs through Spin‐Polarized Injection at High Voltages

The quest for a spin‐polarized organic light‐emitting diode (spin‐OLED) is a common goal in the emerging fields of molecular electronics and spintronics. In this device, two ferromagnetic (FM) electrodes are used to enhance the electroluminescence intensity of the OLED through a magnetic control of the spin polarization of the injected carriers. The major difficulty is that the driving voltage of an OLED device exceeds a few volts, while spin injection in organic materials is only efficient at low voltages. The fabrication of a spin‐OLED that uses a conjugated polymer as bipolar spin collector layer and ferromagnetic electrodes is reported here. Through a careful engineering of the organic/inorganic interfaces, it is succeeded in obtaining a light‐emitting device showing spin‐valve effects at high voltages (up to 14 V). This allows the detection of a magneto‐electroluminescence (MEL) enhancement on the order of a 2.4% at 9 V for the antiparallel (AP) configuration of the magnetic electrodes. This observation provides evidence for the long‐standing fundamental issue of injecting spins from magnetic electrodes into the frontier levels of a molecular semiconductor. The finding opens the way for the design of multifunctional devices coupling the light and the spin degrees of freedom.     

Locking and Unlocking the Molecular Spin Crossover Transition

The Fe(II) spin crossover complex [Fe{H₂B(pz)₂}₂(bipy)] (pz = pyrazol‐1‐yl, bipy = 2,2′‐bipyridine) can be locked in a largely low‐spin‐state configuration over a temperature range that includes temperatures well above the thermal spin crossover temperature of 160 K. This locking of the spin state is achieved for nanometer thin films of this complex in two distinct ways: through substrate interactions with dielectric substrates such as SiO₂ and Al₂O₃, or in powder samples by mixing with the strongly dipolar zwitterionic p ‐benzoquinonemonoimine C₆H₂(—? NH₂)₂(—? O)₂. Remarkably, it is found in both cases that incident X‐ray fluences then restore the [Fe{H₂B(pz)₂}₂(bipy)] moiety to an electronic state characteristic of the high spin state at temperatures of 200 K to above room temperature; that is, well above the spin crossover transition temperature for the pristine powder, and well above the temperatures characteristic of light‐ or X‐ray‐induced excited‐spin‐state trapping. Heating slightly above room temperature allows the initial locked state to be restored. These findings, supported by theory, show how the spin crossover transition can be manipulated reversibly around room temperature by appropriate design of the electrostatic and chemical environment.     

Microwave Energy Drives “On–Off–On” Spin‐Switch Behavior in Nitrogen‐Doped Graphene

The established application of graphene in organic/inorganic spin‐valve spintronic assemblies is as a spin‐transport channel for spin‐polarized electrons injected from ferromagnetic substrates. To generate and control spin injection without such substrates, the graphene backbone must be imprinted with spin‐polarized states and itinerant‐like spins. Computations suggest that such states should emerge in graphene derivatives incorporating pyridinic nitrogen. The synthesis and electronic properties of nitrogen‐doped graphene (N content: 9.8%), featuring both localized spin centers and spin‐containing sites with itinerant electron properties, are reported. This material exhibits spin‐switch behavior (on–off–on) controlled by microwave irradiation at X‐band frequency. This phenomenon may enable the creation of novel types of switches, filters, and spintronic devices using sp²‐only 2D systems.     

Excitation and Amplification of Spin Waves by Spin–Orbit Torque

The emerging field of nanomagnonics utilizes high‐frequency waves of magnetization—spin waves—for the transmission and processing of information on the nanoscale. The advent of spin‐transfer torque has spurred significant advances in nanomagnonics, by enabling highly efficient local spin wave generation in magnonic nanodevices. Furthermore, the recent emergence of spin‐orbitronics, which utilizes spin–orbit interaction as the source of spin torque, has provided a unique ability to exert spin torque over spatially extended areas of magnonic structures, enabling enhanced spin wave transmission. Here, it is experimentally demonstrated that these advances can be efficiently combined. The same spin–orbit torque mechanism is utilized for the generation of propagating spin waves, and for the long‐range enhancement of their propagation, in a single integrated nanomagnonic device. The demonstrated system exhibits a controllable directional asymmetry of spin wave emission, which is highly beneficial for applications in nonreciprocal magnonic logic and neuromorphic computing.     

Organic Spin‐Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering

Since the first observation of the spin‐valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin‐polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin‐flip mechanisms in organic semiconductors and the role of hybrid metal–organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin‐transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal–organic interface by interface engineering can greatly impact the efficiency of spin‐polarized carrier injection. Here, progress on efficient spin‐polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self‐assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single‐crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin‐polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies.     

Driving Spin and Charge in Quantum Wells by Surface Acoustic Waves

Recent experiments have shown the potential of surface acoustic waves as a mean for transporting charge and spin in quantum wells. In particular, they have proven highly effective for the coherent transport of spin‐polarized wave packets, suggesting their potential in spintronics applications. Motivated by these experimental observations, the spin and charge dynamics in a quantum well under surface acoustic waves is theoretically studied. It is shown that the dynamics acquires a simple and transparent form in a reference frame co‐moving with the surface acoustic wave. The results, e.g., the calculated spin relaxation and precession lengths, are in excellent agreement with recent experimental observations.     

0.2 λ0 Thick Adaptive Retroreflector Made of Spin‐Locked Metasurface

The metasurface concept is employed to planarize retroflectors by stacking two metasurfaces with separation that is two orders larger than the wavelength. Here, a retroreflective metasurface using subwavelength‐thick reconfigurable C‐shaped resonators (RCRs) is reported, which reduces the overall thickness from the previous record of 590 λ₀ down to only 0.2 λ₀. The geometry of RCRs could be in situ controlled to realize equal amplitude and phase modulation onto transverse magnetic (TM)‐polarized and transverse electric (TE)‐polarized incidences. With the phase gradient being engineered, an in‐plane momentum could be imparted to the incident wave, guaranteeing the spin state of the retro‐reflected wave identical to that of the incident light. Such spin‐locked metasurface is natively adaptive toward different incident angles to realize retroreflection by mechanically altering the geometry of RCRs. As a proof of concept, an ultrathin retroreflective metasurface is validated at 15 GHz, under various illumination angles at 10°, 12°, 15°, and 20°. Such adaptive spin‐locked metasurface could find promising applications in spin‐based optical devices, communication systems, remote sensing, RCS enhancement, and so on.     

All‐Organic Dual Spin Valves with Well‐Resolved Four Resistive‐States

The formation of all‐organic dual spin valves (DSVs) with three organic spin‐selective layers, that is, spin‐injection, spin‐detection, and an additional spin‐filtering layer at the intermediate, is reported. As spin‐selective layers, manganese‐ and cobalt phthalocyanines, which are well‐known single‐molecule magnets, are used in their immobilized forms, so that all‐organic DSVs can be prefabricated for characterization. The three spin‐selective layers have provided four configurations with at most two spin‐flip interfaces enforcing spin‐flipping at the two nonmagnetic organic spacer layers, for which copper phthalocyanine is used. Since a couple of the four configurations have exhibited similar resistivities, the degeneracy in the resistive‐states is broken through asymmetric spin‐injection and spin‐detection layers and also through asymmetric thickness of the nonmagnetic spacer layers. When both the spin‐flip interfaces are made operative independently, a 2‐bit logic with four distinct resistive states can be achieved.     

Spin Injection and Spin Accumulation in Permalloy–Copper Mesoscopic Spin Valves

We study the electrical injection and detection of spin currents in a lateral spin valve device, using permalloy (Py) as ferromagnetic injecting and detecting electrodes and copper (Cu) as nonmagnetic metal. Our multiterminal geometry allows us to experimentally distinguish different magnetoresistance signals, being (1) the spin valve effect, (2) the anomalous magnetoresistance (AMR) effect, and (3) Hall effects. We find that the AMR contribution of the Py contacts can be much larger than the amplitude of the spin valve effect, making it impossible to observe the spin valve effect in a conventional measurement geometry. However, these contact magnetoresistance signals can be used to monitor the magnetization reversal process, of the spin injecting and detecting Py contacts. In a nonlocal spin valve measurement we are able to completely isolate the spin valve signal and observe clear spin accumulation signals at T = 4.2 K as well as at room temperature. We obtain spin diffusion lengths in Cu of 1 m and 350 nm at T = 4.2 K and room temperature respectively.     

Magnetic Susceptibility Study of Sub‐Pico‐emu Sample Using a Micromagnetometer: An Investigation through Bistable Spin‐Crossover Materials

A promising and original method to study the spin‐transition in bistable spin‐crossover (SCO) materials using a magnetoresistive multiring sensor and its self‐generated magnetic field is reported. Qualitative and quantitative studies are carried out combining theoretical and experimental approaches. The results show that only a small part of matter dropped on the sensor surface is probed by the device. At a low bias‐current range, the number of detected nanoparticles depends on the amplitude of the current. However, in agreement with the theoretical model, the stray voltage from the particles is proportional to the current squared. By changing both the bias current and the concentration of particle droplet, the thermal hysteresis of an ultrasmall volume, 1 × 10^?4 mm³, of SCO particles is measured. The local probe of the experimental setup allows a highest resolution of 4 × 10^?14 emu to be reached, which is never achieved by experimental methods at room temperature.     

Spin current,spin accumulation and spin Hall effect

Abstract

Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device. It is demonstrated that the spin Hall effect is caused by spin–orbit scattering in nonmagnetic conductors and gives rise to the conversion between spin and charge currents in a nonlocal device. A method of evaluating spin–orbit coupling in nonmagnetic metals is proposed.     

Magnetic resonance scan‐time reduction using echo prediction

A linear prediction (LP) filter derived from a complete echo with zero‐phase encoding amplitude is used for recovering anatomical details from a partially acquired echo sequence. The LP filter is shown to reconstruct missing k‐space phase and amplitude information, with errors sufficiently low so as to provide image reconstruction with a contrast‐to‐noise ratio (CNR) ≥ 3. For volume imaging using multislice acquisition, the partial‐echo sequence enables more number of slices to be acquired for a given repetition time period T_R. For such sequences, separate predictors are used for reconstruction of missing k‐space data corresponding to each individual slice in the volume. The proposed filtering scheme is shown to achieve results comparable to other partial k‐space approaches such as singularity function analysis (SFA), when the noise content is less than about 0.4%. For higher noise levels, this technique is recommended as a preprocessing step for SFA to track the singularity locations more accurately. © 2013 Wiley Periodicals, Inc. Int J Imaging Syst Technol, 23, 1–8, 2013     

Spin Injection: A Survey and Review

The study of the transport and relaxation of spin-polarized carriers in the solid state began about 30 years ago. Tunneling spectroscopy was applied to ferromagnet–insulator–superconductor junctions to demonstrate the polarization of interfacial currents. The use of a ferromagnetic material as an injector and/or detector of polarized carriers has since become a valuable tool, and spin injection has been applied to nonmagnetic metals, superconductors, and semiconductors. The spin injection phenomenology is reviewed in the context of two topics of continuing importance for basic and applied research: (i) the transmission of polarized carriers across ferromagnet/nonmagnetic material interfaces and (ii) carrier spin relaxation inside the nonmagnetic material.