基于FPGA的随机数生成器的设计与实现

在网络通信的应用中,有必要设计出能重构,吞吐量高的随机数生成器。本文提出一种改进Combined Tausworthe算法,基于FPGA的随机数生成器。该生成器开发周期短、组成单元简单、移植速度快。文中还阐述了检测产生出来的随机数质量的结果。     

一种基于噪声的真随机数发生器的ASIC设计与实现

提出了一种应用于密码系统的硬件随机数发生器的ASIC实现,即通过振荡采样把相位噪声转变为随机数.为了使输出平稳,在输出级设计了异或链和伪随机网络.理论研究和仿真测试证明,该方案能生成分布均匀、彼此独立的随机信号.经制版流片后,芯片在1 MHz时钟下输出满足随机性测试的串行随机数.     

一种基于单电子隧穿结和MOS晶体管的混合随机数发生器

提出了一种新颖的单电子随机数发生器(RNG).该随机数发生器由多个单电子隧穿结(MTJ)以及单电子晶体管(SET)/MOS管混合输出电路组成.MTJ被用于实现一个高频率的振荡器.它利用了电子隧穿的物理随机性得到了很大的振荡频率漂移.SET/MOS管输出电路放大并输出MTJ振荡器的输出信号.该信号经过一个低频信号采样后,产生随机数序列.所提出的随机数发生器使用简单的电路结构产生了高质量的随机数序列.它具有简单的结构,输出随机数的速度可以高达1GHz.同时,该电路还具有带负载能力以及很低的功耗.这种新颖的随机数发生器对未来的密码和通讯系统具有一定的应用前景.     

TD-LTE系统中伪随机数生成器的研究与实现

系统的分析了在TD-LTE系统中高速伪随机数生成器的FPGA具体实现方案,实现了一种长周期、高速率、多输出、统计独立性好的伪随机数生成器,并且使用LUT优化了FPGA内部的资源配置。此外,该生成器产生的随机数可以通过AIS31方案的质量评估。     

一种基于FPGA实现的真随机数发生器

本文分析和实现了一种基于FPGA的真随机数发生器,采用对延迟链各级输出同时采样的方法来增加输出序列的随机性。电路为纯数字形式,50MHz采样时钟采得的输出数据可以无需后处理,直接通过随机性测试,且未发现随机性与采样频率存在显著联系。     

基于SoPC系统的高斯随机数生成器的设计

高斯相干态是量子密码通信中最重要的连续变量量子态,如何高效地生成高斯随机数对连续变量量子密码通信的仿真具有重要的意义。本文根据Box-Muller方法,设计了一个基于SoPC系统的高斯随机数生成器,并下载到Spartan 3s1500MB开发板上验证成功。实验结果表明,用该方法生成高斯随机数的速度快,准确度高。     

一种随机数发生模块的实现方法

本文介绍了一种采用物理和数学方法相结合的方式,实现随机数发生器的方法;本设计使用了双物理随机源方式,可避免由于制成工艺等因素造成的随机源输出质量问题,并增加了符合FIPS 140-2 DRBG检测标准的数字后处理模块,使输出的随机数质量更加优良;本设计可应用于任何需要使用随机数的系统中,特别是应用于安全领域的密码芯片中。     

小型化高速实时量子随机数发生器的设计与实现北大核心CSCD

量子随机数基于量子力学的内禀特性,通过量子物理过程产生理论上完全不可预测的真随机数,在信息安全、计算机、量子通信等诸多领域有着重要的应用。为满足量子随机数发生器实用化应用需求,本文提出了一种基于多光子态散粒噪声测量的量子随机数发生器设计与实现方案,实现了小型化、高速率、实时量子随机数发生器,量子随机数实时输出速率可达103.2 Mbps,满足《GM/T 0005-2012随机性检测规范》的随机性测试标准,具备连续稳定工作能力。     

一种基于单电子隧穿结和MOS晶体管的混合随机数发生器

提出了一种新颖的单电子随机数发生器(RNG).该随机数发生器由多个单电子隧穿结(MTJ)以及单电子晶体管(SET)/MOS管混合输出电路组成.MTJ被用于实现一个高频率的振荡器.它利用了电子隧穿的物理随机性得到了很大的振荡频率漂移.SET/MOS管输出电路放大并输出MTJ振荡器的输出信号.该信号经过一个低频信号采样后,产生随机数序列.所提出的随机数发生器使用简单的电路结构产生了高质量的随机数序列.它具有简单的结构,输出随机数的速度可以高达1GHz.同时,该电路还具有带负载能力以及很低的功耗.这种新颖的随机数发生器对未来的密码和通讯系统具有一定的应用前景.     

基于FPGA的随机数性能检测设计

为了满足对随机数性能有一定要求的系统能够实时检测随机数性能的需求,提出了一种基于FPGA的随机数性能检测设计方案。根据NIST的测试标准,采用基于统计的方法,在FPGA内部实现了对随机序列的频率测试、游程测试、最大游程测试、离散傅里叶变换测试和二元矩阵秩测试。与现在常用的随机数性能测试软件相比,该设计方案,能灵活嵌入到需要使用随机数的系统中,实现对随机性能的实时检测。实际应用表明,该设计具有使用灵活、测试准确、实时输出结果的特点,达到了设计要求。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.