1.42 /spl mu/m continuous-wave operation of GaInNAs laser diodes

Continuous-wave (CW) operation of GaInNAs laser diodes in the 1.4 /spl mu/m range has been realised for the first time. A GaInNAs double quantum well separate confinement heterostructure was grown by solid source molecular beam epitaxy. Threshold currents as low as 66 mA and external efficiencies as high as 0.29 W/A could be demonstrated in CW operation. Lasing was observed up to 150/spl deg/C and a characteristic temperature T/sub 0/ of 111K was demonstrated. The emission wavelength at room temperature was centred at 1417 nm.     

1.3 /spl mu/m double quantum well GaInNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidth

A report is presented on continuous-wave (CW) singlemode operation of a distributed feedback GaInAsN laser diode at 1295 nm. A sidemode supression ratio of 43 dB is obtained at 60 mA drive current. Small signal modulation bandwidth measurements show a record 3 dB cutoff frequency of 13.8 GHz.     

1.50 /spl mu/m CW operation of GaInNAs/GaAs laser diodes grown by MOCVD

Room-temperature continuous-wave operation of a 1.5 /spl mu/m range GaInNAs laser grown by metal organic chemical vapour deposition is reported. The lasing wavelength of the GaInNAs/GaAs double quantum well laser was 1.50 /spl mu/m and the threshold current was 245 mA. The characteristic temperature between 10 and 50/spl deg/C was about 119 K under pulse operation.     

7.8 GHz small-signal modulation bandwidth of 1.3 μm DQWGaInAsN/GaAs laser diodes

High frequency characterisation of double quantum well GaInAsN laser diodes emitting at 1.28 μm is reported. The 3 dB bandwidth of ridge waveguide lasers was measured to be 7.8 GHz at 120 mA under CW operation demonstrating the potential for high speed operation of these devices     

GaInAsN/GaAs quantum dot laser diodes operating in 1.36 /spl mu/m wavelength range

For the first time, a pseudomorphic GaInAsN DWELL laser with laser emission at 1.36 /spl mu/m and a low transparency current density (206 A/cm/sup 2/) grown by molecular beam epitaxy is reported. The GaInAsN DWELL laser shows a redshift in comparison to an N-free GaInAs DWELL laser of about 90 nm and a transparency current density of 35 A/cm/sup 2/ per single QD layer.     

0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 /spl mu/m

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL) operating at 1.3 /spl mu/m is reported. CW output powers >0.6 W were achieved using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a single-crystal diamond heatspreader.     

Hole-well antimonide laser diodes on GaSb operating near 2.93 /spl mu/m

The operation of electrically-pumped type-II Sb-based laser diodes in which only the holes are quantum confined is reported. These laser structures were fabricated by molecular beam epitaxy on (001) GaSb substrates. In the multi-quantum well region, radiative recombinations originate from InGaSb hole wells embedded in InGaAsSb barriers lattice-matched to GaSb. Laser operation was demonstrated from such structures up to 243 K at 2.93 mum in the pulsed regime (200 ns, 5 kHz). A minimum threshold of about 12.8 kW/cm² combined with a T₀ around 70 K have been measured     

High performance 1.28 /spl mu/m GaInNAs double quantum well lasers

The use of multiple quantum wells and GaAs barriers favours the temperature stability and modulation bandwidth of GaInNAs lasers. It is shown that a very low threshold current density and a high characteristic temperature can be achieved for GaInNAs/GaAs double quantum well lasers, emitting at 1.28 /spl mu/m, when grown by molecular beam epitaxy under favourable conditions.     

1.53 /spl mu/m GaInNAsSb laser diodes grown on GaAs(100)

GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm/sup -2/ per quantum well in pulsed mode, with characteristic temperatures as high as 90 K.     

1.5 /spl mu/m laser on GaAs with GaInNAsSb quinary quantum well

A 1.50 /spl mu/m broad area edge emitting laser is demonstrated with a structure grown by molecular beam epitaxy on a GaAs substrate. The active region is based on a single GaInNAsSb quantum well. The threshold current density is 3.5 kA/cm/sup 2/. Output power over 22 mW per facet is achieved.     

GaInNAs-based distributed feedback laser diodes emitting at 1.5 /spl mu/m

For the first time, GaAs-based 1.5 /spl mu/m singlemode emission has been realised utilising GaInNAs active-layer material and lateral distributed feedback. The double quantum well separate confinement laser structure was grown by plasma-assisted molecular beam epitaxy. A threshold current of 240 mA and an external efficiency of 0.11 W/A could be demonstrated with a sidemode suppression ratio of better than 26 dB in pulsed operation. Singlemode emission up to 1506.5 nm has been realised.     

Low-threshold CW GaInNAsSb/GaAs laser at 1.49 /spl mu/m

Low-threshold room temperature continuous wave 1.49 /spl mu/m GaInNAsSb lasers are presented. Room temperature threshold current density of 1.1 kA/cm/sup 2/ was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets.     

Tunable self-seeded semiconductor disk laser operating at 2/spl mu/m

A 2 mum semiconductor disk laser with a tuning range of 35 nm and output power exceeding 500 mW is reported. The method for generating wavelength-tunable radiation is based on self-seeding the disk laser using optical feedback from a diffraction grating     

Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 /spl mu/m

The first 1.55 /spl mu/m room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb/GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 nm near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3/spl times/589 /spl mu/m device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70/spl deg/C.     

High-power AlGaInAs strained multiquantum well lasers operating at 1.52 /spl mu/m

1.75 W CW power in AlGaInAs-InP strained QW lasers is demonstrated. Room temperature threshold current densities are 410 A/cm/sup 2/, and the characteristic temperature is 69 K. The variation in the external differential efficiency with cavity length and temperature reveal the optimum length and show how nonradiative recombination mechanisms limit the performance.     

Very-low-threshold 2.4-/spl mu/m GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime

A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 /spl mu/m were fabricated and tested. An internal losses coefficient as low as 4 cm/sup -1/ and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm/sup 2/. The threshold current density per quantum well is as low as 34 A/cm/sup 2/ for a 3-mm-long cavity.     

High-quality 1.3 /spl mu/m GaInNAs single quantum well lasers grown by MBE

High-quality 1.3 /spl mu/m GaInNAs/GaNAs single quantum well lasers grown by molecular beam epitaxy are reported. The broad area lasers show a record low threshold current density of 318 A/cm/sup 2/ for a cavity length of 1 mm, a transparent current density of 84 A/cm/sup 2/, and a characteristic temperature of 103 K from 8 to 70/spl deg/C.     

GaInAsN/GaAs laser diodes operating at 1.52 μm

GaInAsN/GaAs double quantum well (DQW) lasers have been grown by solid source molecular beam epitaxy (MBE). Room-temperature pulsed operation is demonstrated for a ridge waveguide laser diode at a wavelength of 1517 nm. This is the first report of room-temperature laser emission in the 1.5 μm range based on GaAs     

Room-temperature InAs=AlSb quantum-cascade laser operating at 8.9 /spl mu/m

A room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 mum is reported. The laser structure is grown on an n-InAs (100) substrate by solid-source molecular-beam epitaxy. The active region utilises a diagonal intersubband transition in an InAs/AlSb three-quantum-well structure. Observed threshold current density in pulse mode is 2.6 kA/cm² at 80 K and 12.0 kA/cm² at 300 K. The maximum operation temperature is 305 K     

Interband cascade laser operating to 269 K at /spl lambda/=4.05 /spl mu/m

A ten-stage interband cascade laser with 13 mum-wide, 4 mm-long ridge waveguide and Au electroplating for improved epitaxial-side-up heatsinking operates CW to a temperature of 269 K, where the emission wavelength is 4.05 mum. Maximum CW output powers are 130 mW at 78 K, 58 mW at 200 K, and 9 mW at 260 K, and the threshold current density at T=260 K is 660 A/cm²