B3G的关键技术及其发展趋势

文章主要针对B3G的关键技术、研究进展以及发展趋势展开论述,首先归纳了B3G的概念和特点,接着对B3G的关键技术的研究现状和今后的发展进行了讨论,最后简要介绍了世界各国的B3G进展情况。     

B3G技术的研究及发展趋势

本文介绍了B3G技术的市场背景,B3G技术的定义,并详细介绍了B3G技术的研究及发展趋势和一些考虑。     

B3G全球研究进展

随着3G技术在全球范围内逐步开始商用,业界已经开始考虑研究移动通信的下一代技术.本文首先介绍了业界对B3G技术的定义和认识,然后重点介绍了全球开展B3G研究的主要研究机构、标准化组织及其研究计划和进展.     

我国及全球BSG／4G研究及标准化进展

文章针对移动通信领域前瞻性技术B3G／4G展开了论述,首先介绍了B3G／4G通信系统的概况,然后论述了其关键技术的研究情况,接着分析了中国以及全球的B3G／4G标准化的进展,最后对B3G／4G的未来发展进行了展望。     

我国及全球B3G/4G研究及标准化进展

文章针对移动通信领域前瞻性技术B3G/4G展开了论述,首先介绍了B3G/4G通信系统的概况,然后论述了其关键技术的研究情况,接着分析了中国以及全球的B3G/4G标准化的进展,最的对B3G/4G的未来发展进行了展望.     

我国Beyond 3G系统的频谱规划研究

随着3G在全球的大规模商用和我国3G时代的即将来临,B3G/4G移动通信系统的研究、开发和标准化工作也开始受到业界的普遍关注。通过多年的研究积累,人们对B3G/4G的前景、技术和服务、标准化等关键问题已达成某些共识,各国、各地区已相继建立了有关研究计划,并取得了重要阶段性进展。为了促进B3G/4G移动通信技术的交流,我刊本期特别推出“B3G/4G技术”专题,以期推进我国未来移动通信技术的发展。     

中国IMT-Advanced研究进展

IMT-Advanced(即B3G)技术的标准化工作即将展开,各国的B3G研究工作均已进入系统设计、评估、实验的实质阶段。分别介绍了国际上和我国IMT-Advanced研究工作的进展情况,对IMT-Advanced需求进行了研究,重点探讨了IMT-Advanced无线接入网系统框架。     

B3G无线通信技术的发展趋势

1．国际B3G研究工作进展 B3G技术的研究从20世纪末3G技术完成标准化之时就开始了。2006年，ITU—R正式将B3G技术命名为IMT-Advanced技术（3G技术名为IMT-2000）。     

33G技术及标准正加速完善

在全球3G及增强型3G网络商用化进程稳步推进的同时，为满足移动宽带数据业务对传输速率的要求，研究开发速率更高、性能更先进的新一代移动通信技术正成为世界各国和相关机构关注的重点。后3G相关技术及标准的超前研究已经被提上了议事日程。目前，在多方协力推进下，B3G技术及标准的预研工作已经取得较大进展。在移动通信高速发展的背景下，业界普遍认为，移动通信市场特别是移动数据通信市场仍然有巨大的发展空间。[第一段]     

5G核心网标准化进展及B5G演进初探

为了给后续B5G核心网技术研究和标准化提供思路,首先介绍了5G核心网的服务化架构,描述了网络切片、边缘计算等关键技术;然后介绍了3GPP R15核心网标准化成果,提出了5G核心网系统架构,并介绍了R16在固移融合、5G LAN、TSN等方向的核心网标准化进展;其次介绍了ITU IMT-2020核心网标准化进展,包括IMT-2020核心网架构,给出了B5G核心网演进思路分析,提出网络极简化、行业专网增强、网络智能化、uRLLC、mMTC、天地一体化等5G核心网演进方向,并提供了3GPP、ITU的B5G核心网标准化最新进展;最后提出B5G核心网技术方案研究和标准化应覆盖全部的主流技术方向,面向未来做好技术能力储备。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.