Effects of Solder Volume on Formation and Redeposition of Au-Containing Intermetallics in Ni/Au-SnAgCu-Ni(P) Solder Joints

SnAgCu is one of the most promising candidates for lead-free solders to replace conventional eutectic SnPb solders. The effects of solder volume on interfacial reactions and microstructure evolution in Ni/Au-SnAgCu-Ni(P) solder joints have been investigated under soldering and thermal aging conditions. The results show that solder volume has a strong effect on the formation of Au-containing intermetallic compounds (IMCs) and their redeposition at the interfaces. The size and volume fraction of Au-containing IMCs dispersed in the solder bulk increased with decreasing solder joint dimensions. For the small solder joint with 300-μm solder ball, the (Au,Ni)Sn₄ IMCs redeposited to the interfaces after thermal aging at 150°C for 9 days, but this was not observed for the other two solder joints with large solder volume. These results also indicate that the redeposition of (Au,Ni)Sn₄ is closely associated with the migration of Cu toward the interfaces.     

Influence of Dopant on Growth of Intermetallic Layers in Sn-Ag-Cu Solder Joints

The interfacial interaction between Cu substrates and Sn-3.5Ag-0.7Cu-xSb (x = 0, 0.2, 0.5, 0.8, 1.0, 1.5, and 2.0) solder alloys has been investigated under different isothermal aging temperatures of 100°C, 150°C, and 190°C. Scanning electron microscopy (SEM) was used to measure the thickness of the intermetallic compound (IMC) layer and observe the microstructural evolution of the solder joints. The IMC phases were identified by energy-dispersive x-ray spectroscopy (EDX) and x-ray diffractometry (XRD). The growth of both the Cu₆Sn₅ and Cu₃Sn IMC layers at the interface between the Cu substrate and the solder fits a power-law relationship with the exponent ranging from 0.42 to 0.83, which suggests that the IMC growth is primarily controlled by diffusion but may also be influenced by interface reactions. The activation energies and interdiffusion coefficients of the IMC formation of seven solder alloys were determined. The addition of Sb has a strong influence on the growth of the Cu₆Sn₅ layer, but very little influence on the formation of the Cu₃Sn IMC phase. The thickness of the Cu₃Sn layer rapidly increases with aging time and temperature, whereas the thickness of the Cu₆Sn₅ layer increases slowly. This is probably due to the formation of Cu₃Sn at the interface between two IMC phases, which occurs with consumption of Cu₆Sn₅. Adding antimony to Sn-3.5Ag-0.7Cu solder can evidently increase the activation energy of Cu₆Sn₅ IMC formation, reduce the atomic diffusion rate, and thus inhibit excessive growth of Cu₆Sn₅ IMCs. This study suggests that grain boundary pinning is one of the most important mechanisms for inhibiting the growth of Cu₆Sn₅ IMCs in such solder joints when Sb is added.     

A Study on the Thermal Reliability of Cu/SnAg Double-Bump Flip-Chip Assemblies on Organic Substrates

The Cu/SnAg double-bump structure is a promising candidate for fine-pitch flip-chip applications. In this study, the interfacial reactions of Cu (60 μm)/SnAg (20 μm) double-bump flip chip assemblies with a 100 μm pitch were investigated. Two types of thermal treatments, multiple reflows and thermal aging, were performed to evaluate the thermal reliability of Cu/SnAg flip-chip assemblies on organic printed circuit boards (PCBs). After these thermal treatments, the resulting intermetallic compounds (IMCs) were identified with scanning electron microscopy (SEM), and the contact resistance was measured using a daisy-chain and a four-point Kelvin structure. Several types of intermetallic compounds form at the Cu column/SnAg solder interface and the SnAg solder/Ni pad interface. In the case of flip-chip samples reflowed at 250°C and 280°C, Cu₆Sn₅ and (Cu, Ni)₆Sn₅ IMCs were found at the Cu/SnAg and SnAg/Ni interfaces, respectively. In addition, an abnormal Ag₃Sn phase was detected inside the SnAg solder. However, no changes were found in the electrical contact resistance in spite of severe IMC formation in the SnAg solder after five reflows. In thermally aged flip-chip samples, Cu₆Sn₅ and Cu₃Sn IMCs were found at the Cu/SnAg interface, and (Cu, Ni)₆Sn₅ IMCs were found at the SnAg/Ni interface. However, Ag₃Sn IMCs were not observed, even for longer aging times and higher temperatures. The growth of Cu₃Sn IMCs at the Cu/SnAg interface was found to lead to the formation of Kirkendall voids inside the Cu₃Sn IMCs and linked voids within the Cu₃Sn/Cu column interfaces. These voids became more evident when the aging time and temperature increased. The contact resistance was found to be nearly unchanged after 2000 h at 125°C, but increases slightly at 150°C, and a number of Cu/SnAg joints failed after 2000 h. This failure was caused by a reduction in the contact area due to the formation of Kirkendall and linked voids at the Cu column/Cu₃Sn IMC interface.     

Controlling intermetallic compound growth in SnAgCu/Ni-P solder joints by nanosized Cu6Sn5 addition

Nanosized Cu₆Sn₅ dispersoids were incorporated into Sn and Ag powders and milled together to form Sn-3Ag-0.5Cu composite solders by a mechanical alloying process. The aim of this study was to investigate the interfacial reaction between SnAgCu composite solder and electroless Ni-P/Cu UBM after heating for 15 min. at 240°C. The growth of the IMCs formed at the composite solder/EN interface was retarded as compared to the commercial Sn3Ag0.5Cu solder joints. With the aid of the elemental distribution by x-ray color mapping in electron probe microanalysis (EPMA), it was revealed that the SnAgCu composite solder exhibited a refined structure. It is proposed that the Cu₆Sn₅ additives were pinned on the grain boundary of Sn after heat treatment, which thus retarded the movement of Cu toward the solder/EN interface to form interfacial compounds. In addition, wetting is an essential prerequisite for soldering to ensure good bonding between solder and substrate. It was demonstrated that the contact angles of composite solder paste was <25°, and good wettability was thus assured.     

Kinetics of Intermetallic Compound Formation at the Interface Between Sn-3.0Ag-0.5Cu Solder and Cu-Zn Alloy Substrates

The growth kinetics of an intermetallic compound (IMC) layer formed between Sn-3.5Ag-0.5Cu (SAC) solders and Cu-Zn alloy substrates was investigated for samples aged at different temperatures. Scallop-shaped Cu₆Sn₅ formed after soldering by dipping Cu or Cu-10 wt.%Zn wires into the molten solder at 260°C. Isothermal aging was performed at 120°C, 150°C, and 180°C for up to 2000 h. During the aging process, the morphology of Cu₆Sn₅ changed to a planar type in both specimens. Typical bilayer of Cu₆Sn₅ and Cu₃Sn and numerous microvoids were formed at the SAC/Cu interfaces after aging, while Cu₃Sn and microvoids were not observed at the SAC/Cu-Zn interfaces. IMC growth on the Cu substrate was controlled by volume diffusion in all conditions. In contrast, IMC growth on Cu-Zn specimens was controlled by interfacial reaction for a short aging time and volume diffusion kinetics for a long aging time. The growth rate of IMCs on Cu-Zn substrates was much slower due to the larger activation energy and the lower layer growth coefficient for the growth of Cu-Sn IMCs. This effect was more prominent at higher aging temperatures.     

Microstructure characterization of SnAgCu solder bearing Ce for electronic packaging

The creep-rupture lives of Sn3.8Ag0.7Cu and Sn3.8Ag0.7Cu0.03Ce lead-free solder joints for electronic packaging were investigated, respectively. And the relationship between creep behavior and intermetallic compound (IMC: Ag₃Sn, Cu₆Sn₅, CeSn₃) particles in SnAgCu/SnAgCuCe solder joints has been obtained. Meanwhile, rare earth Ce concentration gradient and retardation effect of Ce on the IMC layer have been observed at the solder/Cu interface. Moreover, aging reaction of Sn and Cu, and the effect mechanism of rare earth Ce on two IMCs (Cu₆Sn₅ and Cu₃Sn) are reported.     

Interfacial reactions and compound formation of Sn-Ag-Cu solders by mechanical alloying on electroless Ni-P/Cu under bump metallization

Electroless Ni-P under bump metallization (UBM) has been widely used in electronic interconnections due to the good diffusion barrier between Cu and solder. In this study, the mechanical alloying (MA) process was applied to produce the SnAgCu lead-free solder pastes. Solder joints after annealing at 240°C for 15 min were employed to investigate the evolution of interfacial reaction between electroless Ni-P/Cu UBM and SnAgCu solder with various Cu concentrations ranging from 0.2 to 1.0 wt.%. After detailed quantitative analysis with an electron probe microanalyzer, the effect of Cu content on the formation of intermetallic compounds (IMCs) at SnAgCu solder/electroless Ni-P interface was evaluated. When the Cu concentration in the solder was 0.2 wt.%, only one (Ni, Cu)₃Sn₄ layer was observed at the solder/electroless Ni-P interface. As the Cu content increased to 0.5 wt.%, (Cu, Ni)₆Sn₅ formed along with (Ni, Cu)₃Sn₄. However, only one (Cu, Ni)₆Sn₅ layer was revealed, if the Cu content was up to 1 wt.%. With the aid of microstructure evolution, quantitative analysis, and elemental distribution by x-ray color mapping, the presence of the Ni-Sn-P phase and P-rich layer was evidenced.     

Influence of initial morphology and thickness of Cu<Subscript>6</Subscript>Sn<Subscript>5</Subscript> and Cu<Subscript>3</Subscript>Sn intermetallics on growth and evolution during thermal aging of Sn-Ag solder/Cu joints

Intermetallic-layer formation and growth in Pb-free solder joints, during solder reflow or subsequent aging, has a significant effect on the thermal and mechanical behavior of solder joints. In this study, the influence of initial intermetallic morphology on growth rate, and kinetics were examined in a Sn-3.5Ag solder reflowed on Cu. The initial morphology of the intermetallic was tailered by cooling in water, air, or furnace conditions. Solder aging was conducted at 100°C, 140°C, and 175°C and aged for 0–1,000 h. Cooling rate, aging temperature, and aging time played an important role on microstructure evolution and growth kinetics of Cu₆Sn₅ (η) and Cu₃Sn (ɛ) intermetallic layers. Prior to aging, faster cooling rates resulted in a relatively planar Cu₆Sn₅ layer, while a nodular Cu₆Sn₅ morphology was present for slower cooling. Intermetallic-growth rate measurements after aging at various times, indicated a mixed growth mechanism of grain-boundary and bulk diffusion. These mechanisms are discussed in terms of the initial intermetallic thickness and morphology controlled by cooling rate, diffusion kinetics, and the competition between Cu₆Sn₅ and Cu₃Sn growth.     

Effects of microstructural evolution and intermetallic layer growth on shear strength of ball-grid-array Sn-Cu solder joints

The shear strength of ball-grid-array (BGA) solder joints on Cu bond pads was studied for Sn-Cu solder containing 0, 1.5, and 2.5 wt.% Cu, focusing on the effect of the microstructural changes of the bulk solder and the growth of intermetallic (IMC) layers during soldering at 270°C and aging at 150°C. The Cu additions in Sn solder enhanced both the IMC layer growth and the solder/IMC interface roughness during soldering but had insignificant effects during aging. Rapid Cu dissolution from the pad during reflow soldering resulted in a fine dispersion of Cu₆Sn₅ particles throughout the bulk solder in as-soldered joints even for the case of pure Sn solder, giving rise to a precipitation hardening of the bulk solder. The increased strength of the bulk solder caused the fracture mode of as-soldered joints to shift from the bulk solder to the solder/IMC layer as the IMC layer grew over a critical thickness about 1.2 m for all solders. The bulk solder strength decreased rapidly as the fine Cu₆Sn₅ precipitates coarsened during aging. As a consequence, regardless of the IMC layer thickness and the Cu content of the solders, the shear strength of BGA solder joints degraded significantly after 1 day of aging at 150°C and the shear fracture of aged joints occurred in the bulk solder. This suggests that small additions of Cu in Sn-based solders have an insignificant effect on the shear strength of BGA solderjoints, especially during system use at high temperatures.     

Effect of thermal aging on the interfacial structure of SnAgCu solder joints on Cu

Interfacial structure plays a great role in solder joint reliability. In solder joints on Cu, not only is Kirkendall voiding at the solder/Cu interface a concern, but also the growth of interfacial Cu–Sn intermetallic compounds (IMCs). In this work, evolution of microstructure in the interfacial region was studied after thermal aging at 100–150 °C for up to 1000 h. Special effort was made during sample preparation to reveal details of the interfacial structure. Thickness of the interfacial phases was digitally measured and the activation energy was deduced for the growth of Cu₃Sn. Kirkendall voids formed at the Cu/Cu₃Sn interface as well as within the Cu₃Sn layer. The thickness of Cu₃Sn significantly increased with aging time, but that of Cu₆Sn₅ changed a little. The interfacial Cu₃Sn layer was found growing at the expense of Cu₆Sn₅. Evolution of the interfacial structure during thermal aging is discussed.     

Impact of Ni concentration on the intermetallic compound formation and brittle fracture strength of Sn–Cu–Ni (SCN) lead-free solder joints

Cu₆Sn₅ and Cu₃Sn are common intermetallic compounds (IMCs) found in Sn–Ag–Cu (SAC) lead-free solder joints with OSP pad finish. People typically attributed the brittle failure to excessive growth of IMCs at the interface between the solder joint and the copper pad. However, the respective role of Cu₆Sn₅ and Cu₃Sn played in the interfacial fracture still remains unclear. In the present study, various amounts of Ni were doped in the Sn–Cu based solder. The different effects of Ni concentration on the growth rate of (Cu, Ni)₆Sn₅/Cu₆Sn₅ and Cu₃Sn were characterized and compared. The results of characterization were used to evaluate different growth rates of (Cu, Ni)₆Sn₅ and Cu₃Sn under thermal aging. The thicknesses of (Cu, Ni)₆Sn₅/Cu₆Sn₅ and Cu₃Sn after different thermal aging periods were measured. High speed ball pull/shear tests were also performed. The correlation between interfacial fracture strength and IMC layer thicknesses was established.     

The nanoindentation characteristics of Cu<Subscript>6</Subscript>Sn<Subscript>5</Subscript>, Cu<Subscript>3</Subscript>Sn,and Ni<Subscript>3</Subscript>Sn<Subscript>4</Subscript> intermetallic compounds in the solder bump

In general, formation and growth of intermetallic compounds (IMCs) play a major role in the reliability of the solder joint in electronics packaging and assembly. The formation of Cu-Sn or Ni-Sn IMCs have been observed at the interface of Sn-rich solders reacted with Cu or Ni substrates. In this study, a nanoindentation technique was employed to investigate nanohardness and reduced elastic moduli of Cu₆Sn₅, Cu₃Sn, and Ni₃Sn₄ IMCs in the solder joints. The Sn-3.5Ag and Sn-37Pb solder pastes were placed on a Cu/Ti/Si substrate and Ni foil then annealed at 240°C to fabricate solder joints. In Sn-3.5Ag joints, the magnitude of the hardness of the IMCs was in the order Ni₃Sn₄>Cu₆Sn₅>Cu₃Sn, and the elastic moduli of Cu₆Sn₅, Cu₃Sn, and Ni₃Sn₄ were 125 GPa, 136 GPa, and 142 GPa, respectively. In addition, the elastic modulus of the Cu₆Sn₅ IMC in the Sn-37Pb joint was similar to that for the bulk Cu₆Sn₅ specimen but less than that in the Sn-3.5Ag joint. This might be attributed to the strengthening effect of the dissolved Ag atoms in the Cu₆Sn₅ IMC to enhance the elastic modulus in the Sn-3.5Ag/Cu joint.     

Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules

High power modules are still facing the challenges to increase their power output, increase the junction temperature, and increase their reliability in harsh conditions. Therefore this study is doing a detail analysis of the soldering joint between a direct copper bonded substrate and a high power IGBT made with the high lead solder alloy Pb_92.5Sn_5.0Ag_2.5. The intermetallic phases and the microstructure of standard chip to substrate solder joint will be analysed and compared to deteriorated joints coming from modules which have undergone an active thermal cycling. As expected, the as soldered joint was clearly different than solder joints made for ball grid array or small components on PCBs. The as soldered joint shows no sign of Cu₆Sn₅ intermetallic layer, but instead shows the presence of Ag₃Sn particles at the solder–chip interface. Furthermore, the failure mechanisms under active thermal cycling also seem to be different. There is no growth of intermetallic phases and no strong delamination of the device. Instead a large network of intermetallic particles (Ag₃Sn) is produced during aging and seems to degrade the solder thermal properties.     

Effect of volume in interfacial reaction between eutectic Sn-3.5% Ag-0.5% Cu solder and Cu metallization in microelectronic packaging

The Sn-3.5Ag-0.5Cu (wt.%) is the most promising replacement for the eutectic tin-lead solder alloy. Here, an investigation has been carried out to compare the interfacial reactions of the Cu pad of a ball grid array (BGA) substrate with molten eutectic Sn-3.5% Ag-0.5% Cu solder having different volumes. Two different sizes of BGA solder balls were used: 760-μm and 500-μm diameter. Scanning electron microscopy (SEM) was used to measure the consumed thickness of the Cu and also the thickness of the intermetallic compound (IMC). The soldering reaction was carried out at 230°C, 240°C, and 250°C for 1 min, 5 min, 10 min, and 20 min. The Cu consumption was much higher for the Sn-Ag-Cu solder with higher volume. On the other hand, the mean thickness of the intermetallics for solder with smaller volume was thicker than that of the bigger solder balls. The Cu₃Sn compound was also observed at the interface between the Cu₆Sn₅ IMCs and Cu substrate for longer reflow for the both solder balls. Larger Cu₆Sn₅ IMCs were observed in the bulk of the solder with bigger volume. A simplistic theoretical approach is carried out to find out the amount of Cu₆Sn₅ IMCs in the bulk of the solder by measurement of the Cu consumption from the substrate and the thickness of the IMCs that form on the interface.     

Shear and Pull Testing of Sn-3.0Ag-0.5Cu Solder with Ti/Ni(V)/Cu Underbump Metallization During Aging

Ti/Ni(V)/Cu underbump metallization (UBM) is widely used in flip-chip technology today. The advantages of Ti/Ni(V)/Cu UBM are a low reaction rate with solder and the lack of a magnetic effect during sputtering. Sn atoms diffuse into the Ni(V) layer to form a Sn-rich phase, the so-called Sn-patch, during reflow and aging. In this study, the relationship between interfacial reaction and mechanical properties of the solder joints with Ti/Ni(V)/Cu UBM was evaluated. Sn-3.0Ag-0.5Cu solder was reflowed on sputtered Ti/Ni(V)/Cu UBM, and then the reflowed samples were aged at 125°C and 200°C, respectively. (Cu,Ni)₆Sn₅ was formed and grew gradually at the interface of the solder joints during aging at 125°C. The Sn-patch replaced the Ni(V) layer, and (Ni,Cu)₃Sn₄ was thus formed between (Cu,Ni)₆Sn₅ and the Sn-patch at 200°C. The Sn-patch, composed of Ni and V₂Sn₃ after reflow, was transformed to V₂Sn₃ and amorphous Sn during aging. Shear and pull tests were applied to evaluate the solder joints under various heat treatments. The shear force of the solder joints remained at 421 mN, yet the pull force decreased after aging at 125°C. Both the shear and pull forces of the solder joints decreased during aging at 200°C. The effects of aging temperature on the mechanical properties of solder joint were investigated and discussed.     

Interfacial Reaction Between 95Pb-5Sn Solder Bump and 37Pb-63Sn Presolder in Flip-Chip Solder Joints

Interdiffusion and interfacial reaction of 95Pb-5Sn solder bumps and 37Pb-63Sn presolder in flip-chip solder joints during high-temperature storage were studied. Reaction temperatures included 100°C, 130°C, 150°C, and 175°C. It was found that Cu₆Sn₅ and Cu₃Sn formed on the board side and (Ni,Cu)₃Sn₄ formed on the chip side after 100 h of aging. After 2000 h of aging at 175°C, the Ni under-bump metallization (UBM) was exhausted. This caused the (Ni,Cu)₃Sn₄ layer at the chip-side interface to be gradually converted into (Cu_0.6Ni_0.4)₆Sn₅. It was also found that the consumption of the Ni UBM was faster than the case where eutectic Sn-Pb solder was used for the entire joint. Nevertheless, the consumption of the Cu on the substrate side was slower than the case where pure eutectic Sn-Pb solder was used for the entire joint.     

Microstructure and shear strength evolution of Sn-Ag-Cu solder bumps during aging at different temperatures

Flip-chip devices with Sn-3.8Ag-0.7Cu solder on electroless Ni (EN) without immersion Au were studied after aging at different temperatures. The (Cu,Ni)₆Sn₅ intermetallics (IMCs) growth was volume diffusion controlled and Kirkendall voids were found in the Ni₃P layer even at the initial stage of high-temperature aging due to the faster diffusion of Ni in the Ni₃P layer via its column structure boundaries. The Ag₃Sn IMCs were distributed in the bulk solder, existing as plate- or lamella-like phases or as small particles around the β-Sn dendrites, and the (Cu,Ni)₆Sn₅ IMCs existed as facet-like phases. The plate- and lamella-like Ag₃Sn phases break up into small parts and these broken parts, together with small Ag₃Sn particles, coarsen into pebble-like phases during high-temperature aging. Shear tests showed that all the solder bumps fractured in the bulk solder. The shear strength of solder bumps decreases at the initial stage of aging at 150°C and 175°C, and the strength degradation during aging may be caused by the coarsening of small Ag₃Sn particles.     

Experimental investigation of the failure mechanism of Cu–Sn intermetallic compounds in SAC solder joints

A detailed experimental study on the fracture mechanism of Cu–Sn intermetallic compounds (IMCs) in the Pb-free solder was presented in this paper. The growth behaviors of the Cu₆Sn₅ and Cu₃Sn IMCs were inspected and the respective evolution pattern of their microstructures was investigated. Then, a detailed fractographic analysis on brittle fractured solder joints was conducted after the high speed ball pull test. The fracture locations in the Cu–Sn IMC layers during different periods of aging process were identified. The fracture modes of Cu₆Sn₅ and Cu₃Sn were determined as well. Afterwards, the fracture energies of different Cu–Sn IMC materials were directly compared using the Charpy impact test with a specially designed specimen. It was found that the grain boundary of Cu₃Sn is the weakest link in the Cu–Sn IMC system. Finally, based on these three parts of study, a mechanism to explain the thermal degradation of Cu–Sn IMCs was proposed.     

Intermetallics Characterization of Lead-Free Solder Joints under Isothermal Aging

Solder interconnect reliability is influenced by environmentally imposed loads, solder material properties, and the intermetallics formed within the solder and the metal surfaces to which the solder is bonded. Several lead-free metallurgies are being used for component terminal plating, board pad plating, and solder materials. These metallurgies react together and form intermetallic compounds (IMCs) that affect the metallurgical bond strength and the reliability of solder joint connections. This study evaluates the composition and extent of intermetallic growth in solder joints of ball grid array components for several printed circuit board pad finishes and solder materials. Intermetallic growth during solid state aging at 100°C and 125°C up to 1000 h for two solder alloys, Sn-3.5Ag and Sn-3.0Ag-0.5Cu, was investigated. For Sn-3.5Ag solder, the electroless nickel immersion gold (ENIG) pad finish was found to result in the lowest IMC thickness compared to immersion tin (ImSn), immersion silver (ImAg), and organic solderability preservative (OSP). Due to the brittle nature of the IMC, a lower IMC thickness is generally preferred for optimal solder joint reliability. A lower IMC thickness may make ENIG a desirable finish for long-life applications. Activation energies of IMC growth in solid-state aging were found to be 0.54 ± 0.1 eV for ENIG, 0.91 ± 0.12 eV for ImSn, and 1.03 ± 0.1 eV for ImAg. Cu₃Sn and Cu₆Sn₅ IMCs were found between the solder and the copper pad on boards with the ImSn and ImAg pad finishes. Ternary (Cu,Ni)₆Sn₅ intermetallics were found for the ENIG pad finish on the board side. On the component side, a ternary IMC layer composed of Ni-Cu-Sn was found. Along with intermetallics, microvoids were observed at the interface between the copper pad and solder, which presents some concern if devices are subject to shock and vibration loading.     

Investigation of soldering process and interfacial microstructure evolution for the formation of full Cu3Sn joints in electronic packaging

Within electronic products, solder joints with common interfacial structure of Cu/IMCs/Sn-based solders/IMCs/Cu cannot be used under high temperature for relatively low melting points of Sn-based solders (200–300 °C). However, there is a trend for solder joints to service under high temperature because of the objective for achieving multi-functionality of electronic products.With the purpose of ensuring that solder joints can service under high temperature, full Cu₃Sn solder joints with the interfacial structure of Cu/Cu₃Sn/Cu can be a substitute due to the high melting point of Cu₃Sn (676 °C). In this investigation, soldering process parameters were optimized systematically in order to obtain such joints. Further, interfacial microstructure evolution during soldering was analyzed. The soldering temperature of 260 °C, the soldering pressure of 1 N and the soldering time of 5 h were found to be the optimal parameter combination. During soldering of 260 °C and 1 N, the Cu₆Sn₅ precipitated first in a planar shape at Cu-Sn interfaces, which was followed by the appearance of planar Cu₃Sn between Cu and Cu₆Sn₅. Then, the Cu₆Sn₅ at opposite sides continued to grow with a transition from a planar shape to a scallop-like shape until residual Sn was consumed totally. Meanwhile, the Cu₃Sn grew with a round-trip shift from a planar shape to a wave-like shape until the full Cu₃Sn solder joint was eventually formed at 5 h. The detailed reasons for the shape transformation in both Cu₆Sn₅ and Cu₃Sn during soldering were given. Afterwards, a microstructure evolution model for Cu-Sn-Cu sandwich structure during soldering was proposed. Besides, it was found that no void appeared in the interfacial region during the entire soldering process, and a discuss about what led to the formation of void-free joints was conducted.